V60100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS ® • Low forward voltage drop, low power losses TO-220AB • High efficiency operation • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 TYPICAL APPLICATIONS 1 PIN 1 PIN 2 PIN 3 CASE For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: TO-220AB PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A 0.66 V Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test TJ max. 150 °C Package TO-220AB Diode variation Common cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode SYMBOL V60100C UNIT VRRM 100 V IF(AV) 60 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 320 A Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode EAS 450 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 10-May-16 Document Number: 88942 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3 www.vishay.com Vishay General Semiconductor Revision: 10-May-16 Document Number: 88942 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA TYP. MAX. UNIT VBR 100 (minimum) - V IF = 5 A 0.45 - IF = 10 A 0.52 - 0.58 0.63 TA = 25 °C IF = 15 A Instantaneous forward voltage per diode TA = 25 °C SYMBOL IF = 20 A 0.63 - IF = 30 A 0.73 0.79 0.36 - VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 15 A 0.45 - 0.53 0.58 V IF = 20 A 0.58 - IF = 30 A 0.66 0.70 TA = 25 °C 24 500 μA TA = 125 °C 13 20 mA 65 1000 μA 30 - mA VR = 80 V Reverse current at rated VR per diode VR = 100 V TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL V60100C UNIT RJC 2.5 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V60100C-E3/4W UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.89 4W 50/tube Tube Revision: 10-May-16 Document Number: 88942 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Instantaneous Reverse Current (mA) 70 Average Forward Current (A) Resistive or Inductive Load 60 50 40 30 20 10 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 0 0 25 50 75 100 125 150 10 175 20 30 40 50 60 90 Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) D = 0.5 25 Average Power Loss (W) 80 Percent of Rated Peak Reverse Voltage (%) 30 D = 0.3 20 D = 1.0 D = 0.2 15 D = 0.1 T 10 5 D = tp/T 1000 tp 100 0 0 5 10 15 20 25 30 0.1 35 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 70 Case Temperature (°C) TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 10-May-16 Document Number: 88942 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 10-May-16 Document Number: 88942 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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