SPP04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 23 P-TO220-3-1 Type Package Ordering Code SPP04N60S5 PG-TO220 Q67040-S4200 Marking 04N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 4.5 TC = 100 °C 2.8 9 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS 130 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.4 mJ I D = 3.4 A, VDD = 50 V I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 4.5 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 50 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.7 Page 1 2009-11-26 SPP04N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 4.5 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 2.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=4.5A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=200µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.7 RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=2.8A, Tj=25°C - 0.85 0.95 Tj=150°C - 2.3 - f=1MHz, open Drain - 20 - Page 2 nA 2009-11-26 SPP04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 2.5 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=2.8A Input capacitance Ciss V GS=0V, V DS=25V, - 580 - Output capacitance Coss f=1MHz - 220 - Reverse transfer capacitance Crss - 7 - - 20 - - 35 - - 55 - - 30 - Effective output capacitance, 4) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance, 5) Co(tr) time related Turn-on delay time t d(on) pF V DD=350V, V GS=0/10V, ns ID=4.5A, RG=18Ω Rise time tr V DD=350V, V GS=0/10V, ID=4.5A, RG=18 Turn-off delay time t d(off) V DD=350V, V GS=0/10V, - 60 90 Fall time tf ID=4.5A, RG=18Ω - 15 22.5 Gate to source charge Qgs VDD=350V, ID=4.5A - 4.5 - Gate to drain charge Qgd - 11 - Gate charge total Qg - 17.6 22.9 - 8 - Gate Charge Characteristics VDD=350V, ID=4.5A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=4.5A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.7 Page 3 2009-11-26 SPP04N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 4.5 - - 9 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 900 1530 ns Reverse recovery charge Qrr di F/dt=100A/µs - 3.2 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.039 R th2 Cth1 0.00007347 0.074 Cth2 0.0002831 R th3 0.132 Cth3 0.0004062 R th4 0.555 Cth4 0.001215 R th5 0.529 Cth5 0.00276 R th6 0.169 Cth6 0.029 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.7 Page 4 2009-11-26 SPP04N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 55 10 1 SPP04N60S5 W A 45 10 0 35 ID Ptot 40 30 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 25 20 10 -1 15 10 5 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 1 10 14 K/W A 20V 12V 10V 10 9.5V 8 9V ID ZthJC 10 0 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 8.5V 6 8V 4 7.5V 7V 2 6.5V 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp Rev. 2.7 0 0 5 10 15 V 25 VDS Page 5 2009-11-26 3 SPP04N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 8 5 20V 12V 10V 9.5V RDS(on) 9V 8.5V ID A mΩ 8V 4 3.5 4 3 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 7.5V 2.5 7V 2 2 6.5V 6V 0 0 5 10 1.5 V 15 1 0 25 1 2 3 4 5 6 7 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 2.8 A, VGS = 10 V parameter: tp = 10 µs 5.5 SPP04N60S5 8.5 16 Ω A 12 4 3.5 ID RDS(on) 4.5 10 3 8 2.5 6 2 1.5 4 98% 1 typ 2 0.5 0 -60 -20 20 60 100 °C 180 Tj Rev. 2.7 Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2009-11-26 SPP04N60S5 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 4.5 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPP04N60S5 V SPP04N60S5 A 0.2 VDS max 10 0 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 0 0 4 8 12 16 20 nC 10 -2 0 26 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 3.4 A, V DD = 50 V 5 160 A mJ 4 Tj(START) =25°C 120 EAS IAR 3.5 3 2.5 2 100 80 60 Tj(START) =125°C 1.5 40 1 20 0.5 0 -3 10 Rev. 2.7 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 7 0 20 40 60 80 100 120 °C 160 Tj 2009-11-26 SPP04N60S5 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.4mJ 720 SPP04N60S5 200 W 680 150 PAR V(BR)DSS V 660 125 640 100 620 75 600 50 580 25 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 3.5 pF µJ 10 3 Ciss C Eoss 2.5 2 10 2 1.5 Coss 1 10 1 0.5 Crss 10 0 0 100 200 300 400 V 600 VDS Rev. 2.7 0 0 100 200 300 400 V 600 VDS Page 8 2009-11-26 6 SPP04N60S5 Definition of diodes switching characteristics Rev. 2.7 Page 9 2009-11-26 SPP04N60S5 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Page 10 2009-11-26 SPP04N60S5 Rev. 2.7 Page 11 2009-11-26