SPP02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 23 P-TO220-3-1 Type Package Ordering Code SPP02N60S5 PG-TO220 Q67040-S4181 Marking 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 1.8 TC = 100 °C 1.1 Pulsed drain current, tp limited by Tjmax I D puls 3.2 Avalanche energy, single pulse EAS 50 mJ I D = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.07 I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 1.8 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 25 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.7 Page 1 2009-11-26 SPP02N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 1.8 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=1.8A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=80µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Rev. 2.7 µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=1.1A, Tj=25°C - 2.7 3 Tj=150°C - 7.3 - Page 2 nA 2009-11-26 SPP02N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1.4 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=1.1A Input capacitance Ciss V GS=0V, V DS=25V, - 240 - Output capacitance Coss f=1MHz - 77 - Reverse transfer capacitance Crss - 4.4 - Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 35 - Rise time tr ID=1.8A, RG=50Ω - 35 - Turn-off delay time t d(off) - 35 42 Fall time tf - 20 30 - 2.3 - - 4.5 - - 7.3 9.5 - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=350V, ID=1.8A VDD=350V, ID=1.8A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow Rev. 2.7 Page 3 2009-11-26 SPP02N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 1.8 - - 3.2 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 860 1460 ns Reverse recovery charge Qrr di F/dt=100A/µs - 1.6 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.1 R th2 K/W Cth1 0.00002806 0.184 Cth2 0.0001113 R th3 0.306 Cth3 0.0001679 R th4 1.207 Cth4 0.000547 R th5 0.974 Cth5 0.001388 R th6 0.251 Cth6 0.019 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.7 Page 4 2009-11-26 SPP02N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 28 10 1 SPP02N60S5 W A 24 22 10 0 18 ID Ptot 20 16 14 12 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 8 6 4 2 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 2 10 10 V VDS TC 3 Typ. output characteristic 4 Drain-source on-state resistance ID = f (VDS); Tj=25°C RDS(on) = f (Tj) parameter: tp = 10 µs, VGS parameter : ID = 1.1 A, VGS = 10 V 6 17 SPP02N60S5 Ω 20V A 14 4 RDS(on) ID 12V 10V 3 2 8 8.5V 6 5 10 15 V typ 2 25 VDS Rev. 2.7 98% 4 7.5V 7V 6V 0 0 10 9V 8V 1 12 0 -60 -20 20 60 100 °C 180 Tj Page 5 2009-11-26 3 SPP02N60S5 5 Typ. transfer characteristics 6 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 1.8 A pulsed parameter: tp = 10 µs 6 16 SPP02N60S5 V A 0.2 VDS max 12 0.8 VDS max VGS ID 4 10 3 8 6 2 4 1 2 0 0 4 8 12 VGS 0 0 20 1 2 3 4 6 7 8 nC 10 Q Gate V 7 Forward characteristics of body diode 8 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 10 5 1 SPP02N60S5 2 A A 1.6 T j(START)=25°C 1.4 IF IAR 10 0 1.2 1 0.8 10 -1 0.6 Tj = 25 °C typ Tj = 150 °C typ 0.4 Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 0.2 2.4 V 0 -3 10 3 VSD Rev. 2.7 Tj(START)=125°C Page 6 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 4 2009-11-26 SPP02N60S5 9 Avalanche energy 10 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 1.35 A, VDD = 50 V 50 720 SPP02N60S5 V V(BR)DSS EAS mJ 30 680 660 640 620 20 600 580 10 560 0 20 40 60 80 100 120 °C 160 Tj 540 -60 -20 20 60 100 °C 180 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF 10 3 C Ciss 10 2 Coss 10 1 Crss 10 0 0 Rev. 2.7 10 20 30 40 50 60 70 80 V 100 VDS Page 7 2009-11-26 SPP02N60S5 Definition of diodes switching characteristics Rev. 2.7 Page 8 2009-11-26 SPP02N60S5 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Page 9 2009-11-26 SPP02N60S5 Rev. 2.7 Page 10 2009-11-26