2N5457, 2N5458 JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. http://onsemi.com Features • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross−Modulation and Intermodulation Distortion Plastic Encapsulated Package Pb−Free Packages are Available* 1 DRAIN 3 GATE 2 SOURCE MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Reverse Gate −Source Voltage VGSR −25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 310 2.82 mW mW/°C Operating Junction Temperature TJ 135 °C Storage Temperature Range Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 12 3 STRAIGHT LEAD BULK PACK 2N 545x AYWWG G 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 CASE 29 STYLE 5 2N545x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5457 2N5457G 2N5458 2N5458G Package Shipping TO−92 1000 Units/Box TO−92 (Pb−Free) 1000 Units/Box TO−92 1000 Units/Box TO−92 (Pb−Free) 1000 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 6 1 Publication Order Number: 2N5457/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit −25 − − Vdc − − − − -1.0 −200 nAdc −0.5 −1.0 − − −6.0 −7.0 Vdc − − −2.5 −3.5 − − Vdc OFF CHARACTERISTICS V(BR)GSS Gate −Source Breakdown Voltage (IG = −10 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) IGSS Gate−Source Cutoff Voltage (VDS = 15 Vdc, iD = 10 nAdc) 2N5457 2N5458 Gate−Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) 2N5457 2N5458 VGS(off) VGS ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0) 2N5457 2N5458 IDSS 1.0 2.0 3.0 6.0 5.0 9.0 mAdc 2N5457 2N5458 |Yfs| 1000 1500 3000 4000 5000 5500 mmhos − 10 50 mmhos − 4.5 7.0 pF − 1.5 3.0 pF DYNAMIC CHARACTERISTICS Forward Transfer Admittance (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Output Admittance Common Source (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yos| Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Ciss Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Crss 1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. http://onsemi.com 2 2N5457, 2N5458 TYPICAL CHARACTERISTICS For 2N5457 Only 14 VDS = 15 V VGS = 0 f = 1 kHz NF, NOISE FIGURE (dB) 12 10 8 6 4 2 0 0.001 10 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 1. Noise Figure versus Source Resistance 1.2 VGS(off) ^ -1.2 V 1.2 VGS = 0 V 1.0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 VDS = 15 V 0.6 0.4 0 -1.2 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0.8 0.2 -0.8 V -1.0 V 0.2 0 VGS(off) ^ -1.2 V Figure 2. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 0 Figure 3. Common Source Transfer Characteristics http://onsemi.com 3 2N5457, 2N5458 TYPICAL CHARACTERISTICS For 2N5457 Only 5 5 VGS(off) ^ -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V VGS(off) ^ -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 4. Typical Drain Characteristics 10 VGS(off) ^ -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 Figure 5. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) -4 V VGS(off) ^ -5.8 V 8 6 VDS = 15 V 4 2 -5 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -7 25 Figure 6. Typical Drain Characteristics NOTE: -6 -5 -4 -3 -2 -1 VGS, GATE - SOURCE VOLTAGE (VOLTS) Figure 7. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 4 0 2N5457, 2N5458 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 N BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- TYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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