2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. • • • • • • • http://onsemi.com N–Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross–Modulation and Intermodulation Distortion Unibloc Plastic Encapsulated Package 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGSR –25 Vdc IG 10 mAdc 310 2.82 mW mW/°C TJ 135 °C Tstg –65 to +150 °C Reverse Gate–Source Voltage Gate Current Total Device Dissipation Storage Temperature Range 1 2 3 MARKING DIAGRAMS 2N 5457 YWW PD @ TA = 25°C Derate above 25°C Operating Junction Temperature TO–92 CASE 29 STYLE 5 Y WW 2N 5458 YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping 2N5457 TO–92 5000 Units/Box 2N5458 TO–92 5000 Units/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 3 1 Publication Order Number: 2N5457/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Min Max Unit V(BR)GSS –25 –25 – Vdc IGSS – – – – 1.0 –200 nAdc VGS(off) –1.0 –2.0 – – –6.0 –7.0 Vdc VGS – – –2.5 –3.5 –6.0 –7.0 Vdc 2N5638 2N5639 IDSS 1.0 2.0 3.0 6.0 5.0 9.0 mAdc Forward Transfer Admittance (Note 1.) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5638 2N5639 |Yfs| 1000 1500 3000 4000 5000 5500 µmhos Forward Transfer Admittance (Note 1.) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yos| – 10 50 µmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Ciss – 4.5 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Crss – 1.5 3.0 pF OFF CHARACTERISTICS (IG = –10 µAdc, VDS = 0) Gate–Source Breakdown Voltage Gate Reverse Current (VGS = –15 Vdc, VDS = 0) (VGS = –15 Vdc, VDS = 0, TA = 100°C) Gate–Source Cutoff Voltage (VDS = 15 Vdc, iD = 1 nAdc) 2N5457 2N5458 Gate–Source Voltage (VDS = 15 Vdc, iD = 100 µAdc) (VDS = 15 Vdc, iD = 200 µAdc) 2N5457 2N5458 ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (Note 1.) (VDS = 20 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS 1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. 14 VDS = 15 V VGS = 0 f = 1 kHz NF, NOISE FIGURE (dB) 12 10 8 6 4 2 0 0.001 10 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 1. Noise Figure versus Source Resistance VGS(off) -1.2 V 1.2 VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 1.0 0.8 0.6 VDS = 15 V 0.4 0 -1.2 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS(off) -1.2 V 0.2 -0.8 V -1.0 V 0.2 0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 Figure 2. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 0 Figure 3. Common Source Transfer Characteristics http://onsemi.com 2 2N5457, 2N5458 5 VGS = 0 V VGS(off) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 5 VGS(off) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 4. Typical Drain Characteristics 10 VGS(off) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 -4 V -5 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 6 VDS = 15 V 4 2 0 -7 25 VGS(off) -5.8 V 8 Figure 6. Typical Drain Characteristics NOTE: 0 Figure 5. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) -6 -5 -4 -3 -2 -1 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 7. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 3 0 2N5457, 2N5458 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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