Self Protected High Side Driver with Temperature Shutdown and Current Limit

NCV8445
Self Protected High Side
Driver with Temperature
Shutdown and Current Limit
The NCV8445 is a fully protected High−Side driver that can be used
to switch a wide variety of loads, such as bulbs, solenoids and other
acuators. The device is internally protected from an overload
condition by an active current limit and thermal shutdown.
A diagnostic output reports ON and OFF state open load conditions
as well as thermal shutdown.
•
MARKING
DIAGRAM
8
SO−8
D SUFFIX
CASE 751
8
Features
•
•
•
•
•
•
•
•
•
•
•
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Short Circuit Protection
Thermal Shutdown with Automatic Restart
CMOS (3.3 V / 5 V) compatible control input
Open Load Detection in On and Off State
Diagnostic Output
Undervoltage and Overvoltage Shutdown
Loss of Ground Protection
ESD protection
Slew Rate Control for Low EMI Switching
Very Low Standby Current
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
V8445
ALYW
G
1
V8445
A
L
Y
W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
GND 1
8
VD
IN 2
7
OUT
STAT 3
6
OUT
5
VD
NC
4
(Top View)
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
FEATURE SUMMARY
VS
6 to 36
V
RON
45
mW
Ilim
6
A
Operating Voltage Range
RDSon (max), TJ = 25°C
Output Current Limit (min)
ORDERING INFORMATION
Device
NCV8445DR2G
Package
Shipping†
SOIC−8
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 2
1
Publication Order Number:
NCV8445/D
NCV8445
VD
Overvoltage
Detection
Undervoltage
Detection
Regulated
Chargepump
Output
Clamping
Input
Buffer
IN
Pre
Driver
Control
Logic
í
Current
Limitation
STAT
Overtemperature
Detection
On−State
Open Load Detection
GND
Off−State
Open Load Detection
Figure 1. Block Diagram
PIN DESCRIPTION
Pin #
Symbol
1
GND
Description
Ground
2
IN
3
STAT
Logic Level Input
Status Output
4
N/C
No Connection
5
VD
Supply Voltage
6
OUT
Output
7
OUT
Output
8
VD
Supply Voltage
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2
OUT
NCV8445
MAXIMUM RATINGS
Value
Rating
DC Supply Voltage
Peak Transient Input Voltage
(Load Dump 42.5 V, VD = 13.5 V, RLOAD = 6.5 W, ISO7637−2 pulse 5)
Input Voltage
Symbol
Min
Max
Unit
VD
−0.3
42
V
56
V
8
V
Vpeak
Vin
−8
Input Current
Iin
−5
5
mA
Output Current (Note 1)
Iout
−6
Internally
Limited
A
Negative Ground Current
−Ignd
−200
−
mA
Status Current
Istatus
−5
5
mA
Power Dissipation, Tc = 25°C
Ptot
Electrostatic Discharge
(HBM Model 100 pF / 1500 W)
Input
Status
Output
VD
1.183
W
DC
Single Pulse Inductive Load Switching Energy (Note 2)
(L = 1.8 mH, Vbat = 13.5 V; IL = 8.75 A, TJstart = 150°C)
Operating Junction Temperature
Storage Temperature
4
3.5
5
5
kV
kV
kV
kV
EAS
101.5
mJ
TJ
−40
+150
°C
Tstorage
−55
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance
Junction−to−Lead
Junction−to−Ambient (min. Pad)
Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)
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3
Symbol
Max Value
Unit
RqJL
RqJA
RqJA
72
110.8
105.6
°C/W
°C/W
°C/W
NCV8445
ELECTRICAL CHARACTERISTICS (8 ≤ VD ≤ 36 V; −40°C < TJ < 150°C unless otherwise specified)
Value
Min
Typ
Max
Unit
Operating Supply Voltage
VD
6
−
36
V
Undervoltage Shutdown
VUV
3
5
6.5
V
6.5
V
Rating
Undervoltage Restart
Symbol
Conditions
VUV_Rst
Overvoltage Shutdown
VOV
36
On Resistance
RON
Iout = 2 A; TJ = 25°C, VD > 8 V
Iout = 2 A, VD > 8 V
Standby Current
ID
Off State, Vin = Vout = 0 V, VD = 13.5 V
On State; Vin = 5 V, VD = 13.5 V, Iout = 0 A
Output Leakage Current
IL
Vin = Vout = 0 V
Vin = 0 V, Vout = 3.5 V
Vin = Vout = 0 V, VD = 13.5 V
V
10
2.0
−12
45
90
mW
20
4.0
mA
mA
10
5
5
mA
1.25
V
INPUT CHARACTERISTICS
Input Voltage − Low
Vin_low
Input Current − Low
Iin_low
Input Voltage − High
Vin_high
Input Current − High
Iin_high
Vin = 1.25 V
mA
1
3.25
V
Vin = 3.25 V
10
0.25
mA
Input Hysteresis Voltage
Vhyst
Input Clamp Voltage
Vin_cl
Iin = 1 mA
Iin = −1 mA
12
−14
13
−13
14
−12
V
V
Turn−On Delay Time
td_on
to 10% Vout, VD = 13.5 V, RL = 6.5 W
5.0
30
55
ms
Turn−Off Delay Time
td_off
to 90% Vout, VD = 13.5 V, RL = 6.5 W
35
60
85
ms
Slew Rate On
dVout / dton
10% to 80% Vout, VD = 13.5 V, RL = 6.5 W
0.1
0.4
0.8
V / ms
Slew Rate Off
dVout / dtoff
90% to 10% Vout, VD = 13.5 V, RL = 6.5 W
0.1
0.5
0.8
V / ms
0.6
V
0.5
V
SWITCHING CHARACTERISTICS
OUTPUT DIODE CHARACTERISTICS (Note 3)
Forward Voltage
VF
Iout = −1.3 A, TJ = 150°C
Vstat_low
Istat = 1.6 mA
0.2
Istat_leakage
Vstat = 5 V
0.3
Cstat
Vstat = 5 V (Note 3)
Vstat_cl
Istat =1 mA
Istat = −1 mA
STATUS PIN CHARACTERISTICS
Status Output Voltage Low
Status Leakage Current
Status Pin Input Capacitance
Status Clamp Voltage
2.0
mA
100
pF
10
−2.2
11
−1.2
13
−0.6
V
200
°C
PROTECTION FUNCTIONS (Note 4)
Temperature Shutdown
(Note 3)
TSD
150
175
Temperature Shutdown
Hysteresis (Note 3)
TSD_hyst
7
15
8 V < VD < 36 V
6
13
20
A
6 V < VD < 36 V
6
11
20
A
20
ms
VD −
50
V
Output Current Limit
Ilim
Status Delay in Overload
(Note 3)
td_stat
Switch Off Output Clamp
Voltage
Vclamp
Iout = 2 A, Vin = 0 V, L = 6 mH
VD −
43
VD −
46
°C
3. Not subjected to production testing
4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions
must limit the duration and number of activation cycles.
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4
NCV8445
ELECTRICAL CHARACTERISTICS (8 ≤ VD ≤ 36 V; −40°C < TJ < 150°C unless otherwise specified)
Value
Rating
Symbol
Conditions
Min
30
Typ
Max
Unit
500
mA
100
200
ms
2.4
3.5
V
100
300
ms
DIAGNOSTICS CHARACTERISTICS
Openload On State Detection
Threshold
IOL
Vin = 5 V
Openload On State Detection
Delay
td_OL_on
Iout = 0 A
Openload Off State Detection
Threshold
VOL
Vin = 0 V
Openload Detection Delay at
Turn Off
td_OL_off
1.5
3. Not subjected to production testing
4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions
must limit the duration and number of activation cycles.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Iout < IOL
TJ > TJ_TSD
VIN
Vout > VOL
VIN
VSTAT
VSTAT
Td_STAT
Td_OL_off
Td_OL_on
Td_STAT
Figure 2. Open Load Status Timing
(with external pull−up)
Figure 3. Overtemperature Status Timing
Vout
90%
80%
dVout / dt(on)
dVout / dt(off)
10%
t
td(on)
td(off)
Vin
t
Figure 4. Switching Timing Diagram
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5
NCV8445
STATUS PIN TRUTH TABLE
Input
Output
Status
Normal Operation
Conditions
L
H
L
H
H
H
Undervoltage
L
H
L
L
X
X
Overvoltage
L
H
L
L
H
H
Current Limitation
L
H
H
L
X
X
H
(TJ < TSD) H
(TJ > TSD) L
Overtemperature
L
H
L
L
H
L
Output Voltage > VOL
L
H
H
H
L
H
Output Current < IOL
L
H
L
H
H
L
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6
NCV8445
TYPICAL CHARACTERISTICS CURVES
6.0
45
5.8
44
5.6
43
5.2
VOV (V)
VUV (V)
5.4
5.0
4.8
42
41
40
4.6
39
4.4
38
4.2
4.0
−50
0
50
100
37
−50
150
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 5. Undervoltage Shutdown vs.
Temperature
Figure 6. Overvoltage Shutdown vs.
Temperature
90
45
150°C
80
40
70
35
125°C
60
30
Ioff (mA)
RDS(on) (mW)
0
50
25°C
40
−40°C
25
25°C
20
150°C
15
30
−40°C
20
10
5
10
0
0
0
5
10
15
20
25
30
35
0
10
20
30
40
VD (V)
Vbat (V)
Figure 7. RDS(on) Over Temperature and
Battery
Figure 8. OFF State Standby Current Leakage
vs. Vbat and Temperature
6
4.0
150°C
3.5
5
VIN THRESH (V)
25°C
IL (mA)
4
−40°C
3
2
3.0
2.5
2.0
1.5
1
1.0
−50
0
0
10
20
30
40
0
50
100
150
Vbat (V)
TEMPERATURE (°C)
Figure 9. Output Leakage vs. Vbat and
Temperature, Vout = 0 V
Figure 10. Vin Threshold High vs. Temperature
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7
NCV8445
TYPICAL CHARACTERISTICS CURVES
10
4.0
9
3.5
Iin @ 5 V
Iin CURRENT (mA)
Vin LOW (V)
8
3.0
2.5
2.0
7
6
Iin @ 3.25 V
5
4
3
1.5
Iin @ 1.25 V
2
0
50
100
1
−50
150
0
50
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Vin Threshold Low vs. Temperature
Figure 12. Input Current vs. Temperature
14.0
−10.0
13.5
−10.5
13.0
−11.0
Vin_cl (neg) (V)
Vin_cl (pos) (V)
1.0
−50
12.5
12.0
11.5
−11.5
−12.0
−12.5
11.0
−13.0
10.5
−13.5
10.0
−50
0
50
100
−14.0
−50
150
150
0
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 13. Input Clamp Voltage (Positive) vs.
Temperature
Figure 14. Input Clamp Voltage (Negative) vs.
Temperature
70
50
45
25°C
−40°C
60
40
50
30
150°C
25
−40°C
20
Toff (ms)
Ton (ms)
35
25°C
15
40
150°C
30
20
10
10
5
0
0
10
20
Vbat (V)
30
0
40
0
Figure 15. Turn On Delay Time vs. Vbat and
Temperature
10
20
Vbat (V)
30
Figure 16. Turn Off Delay Time vs. Vbat and
Temperature
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8
40
NCV8445
TYPICAL CHARACTERISTICS CURVES
0.7
25°C
1.8
0.6
−40°C
150°C
1.6
0.5
1.4
150°C
Ton (mS)
dVout / dt(on) (mS)
2.0
25°C
0.4
0.3
1.2
−40°C
1.0
0.8
0.6
0.2
0.4
0.1
0.2
0
0
10
20
30
0
40
0
10
20
30
Vbat (V)
Vbat (V)
Figure 17. Slew Rate ON vs. Vbat and
Temperature
Figure 18. Slew Rate OFF vs. Vbat and
Temperature
0.75
40
300
0.70
150°C
250
0.65
Vstat_low (mV)
VF (V)
0.60
0.55
0.50
0.45
200
25°C
150
−40°C
100
0.40
50
0.35
0.30
−50
0
50
100
TEMPERATURE (°C)
0
150
0
10
Figure 19. Forward Voltage (@ −1.3 A) vs.
Temperature
20
VD (V)
30
40
Figure 20. STAT Low Voltage vs. VD
5.0
13.0
4.5
12.5
3.5
12.0
3.0
V(pos) (V)
Istat_Leakage (mA)
4.0
2.5
2.0
11.5
11.0
1.5
1.0
10.5
0.5
0
−50
0
50
100
TEMPERATURE (°C)
10.0
−50
150
Figure 21. Status Leakage Current vs.
Temperature
0
50
100
TEMPERATURE (°C)
150
Figure 22. Status Clamp Voltage (Positive) vs.
Temperature
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9
NCV8445
0
19
−0.5
17
−1.0
15
−1.5
Ilim (A)
STATUS CLAMP (neg) (V)
TYPICAL CHARACTERISTICS CURVES
−2.0
11
−2.5
9
−3.0
7
−3.5
−4.0
−50
0
50
100
5
−50
150
0
50
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 23. Status Clamp Voltage (Negative) vs.
Temperature
Figure 24. Current Limit vs. Temperature
VD = 13.5 V
49
250
25°C
−40°C
200
IOL (mA)
47
46
150
45
100
44
50
43
0
10
150
300
150°C
48
Vclamp (V)
13
20
30
40
0
−50 −30 −10 10
50
30
50
70
90 110 130 150
VD (V)
TEMPERATURE (°C)
Figure 25. Turn Off Output Clamp Voltage vs.
VD and Temperature
Figure 26. ON State Open Load Detection vs.
Temperature VD = 13.5 V
10
2.9
2.7
−40°C
25°C
2.3
2.1
25°C
ILmax (A)
Vol (V)
2.5
150°C
150°C
1.9
1.7
1
1.5
0
5
10
15
20
25
30
35
40
10
100
VD (V)
L (mH)
Figure 27. Off State OL Detection Threshold
vs. VD and Temperature
Figure 28. Single−Pulse Maximum Switch−off
Current vs. Load Inductance
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10
NCV8445
TYPICAL CHARACTERISTICS CURVES
1000
Emax (mJ)
25°C
150°C
100
10
10
100
L (mH)
Figure 29. Single−Pulse Maximum Switch−off
Current vs. Load Inductance
ISO 7637−2: 2004(E) PULSE TEST RESULTS
ISO 7637−2:2004(E)
Test Levels
Test Pulse
I
II
Delays and
III
IV
1
−25 V
−50 V
−75 V
−100 V
2 ms, 10 W
2a
+25 V
+50 V
+37 V
+50 V
0.05 ms, 10 W
3a
−25 V
−50 V
−112 V
−150 V
0.1 ms, 50 W
3b
+25 V
+50 V
+75 V
+100 V
0.1 ms, 50 W
4
−4 V
−5 V
−6 V
−7 V
5 s, .01 W
5 (Load Dump)
+26.5 V
+46.5 V
+66.5 V
+86.5 V
400 ms, 2 W
Test Pulse
I
II
III
IV
1
C
C
C
C
2a
C
C
C
C
3a
C
C
C
C
3b
C
C
C
C
4
C
C
C
C
5 (Load Dump)
C
E
E
E
ISO 7637−2:2004(E)
Class
Impedance
Test Results
Functional Status
A
All functions of a device perform as designed during and after exposure to disturbance.
B
All functions of a device perform as designed during exposure. However,one or more of
them can go beyond specified tolerance. All functions return automatically to within normal
limits after exposure is removed. Memory functions shall remain class A.
C
One or more functions of a device do not perform as designed during exposure but return
automatically to normal operation after exposure is removed.
D
One or more functions of a device do not perform as designed during exposure and do not return to normal operation until
exposure is removed and the device is reset by simple
E
One or more functions of a device do not perform as designed during and after exposure and cannot be returned to proper
operation without replacing the device.
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11
NCV8445
Normal Operation
Input
Load Voltage
Status
Undervoltage
VUV_HYS
VD
VUV
Input
Load Voltage
Status
Undefined
Overvoltage
VD > VOV
VD < VOV
VCC
Input
Load Voltage
Status
Open Load with External pull−up
Input
Load Voltage
VOL
Status
Open Load without External pull−up
Input
Load Voltage
Status
Overtemperature
TJ
TR
Input
Load Voltage
Status
Figure 30. Waveforms
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12
TTSD
NCV8445
+
5V
−
VD
STAT
Vout
Input
GND
Reverse Battery
Protection
Load
DGND
RGND
Figure 31. Application Diagram
Reverse Battery Protection
This offset will be increased when more than one device
shares the resistor.
Power Dissipation during a reverse battery event is equal
to:
An external resistor RGND is required to adequately
protect the device from a Reverse Battery event. The resistor
value can be calculated using the following two formulas.
1. RGND ≥ 600 mV / (Id (on) max)
2. RGND ≥ (-VD) / (-Ignd)
Maximum (-Ignd) current, which is the reverse GND pin
current, can be found in the Maximum Ratings section.
Several High Side Devices can share same the reverse
battery protection resistor. Please note that the sum of (Id
(on) max) of all devices should be used to calculate RGND
value. If the microprocessor ground is not common with the
device ground, RGND will produce a voltage offset ((Id (on)
max) x RGND) with respect to the IN and STAT pins.
2
P D + ǒ* V DǓ ń R GND
In the case of high power dissipation due to several
devices sharing RGND, it is recommended to place a diode
DGND in the ground path as an alternate reverse battery
protection method. When driving an inductive load, a 1 kW
resistor should be placed in parallel with the DGND diode.
This method will also produce a voltage offset of ~600 mV
with respect to the IN and STAT pins. This diode can also be
shared amongst several High Side Devices. This voltage
offset will vary if DGND is shared by multiple devices.
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13
NCV8445
Vbat
5V
V pull −up
VD
STAT
OL
R pull
−up
I
V OUT
Input
GND
RL
Figure 32. Open Load Detection In Off State
OFF State Open Load Detection
when the load is connected, the Rpull-up must also not cause
the OFF State OL to miss detecting an OL condition when
the load is disconnected. A VOUT voltage below the
VOL_max (Openload Off State Detection Threshold)
maximum value with the load (RL) disconnected needs to be
avoided. The following formula shows this relationship:
Off State Open Load Detection requires an external
pull-up resistor (Rpull-up) connected between VOUT pin and
a positive supply voltage (Vpull-up).
The external Rpull-up resistor value should be selected to
ensure that a false OFF State OL condition is not detected
when the load (RL) is connected. A VOUT voltage above the
VOL_min (Openload Off State Detection Threshold)
minimum value with the load (RL) connected needs to be
avoided. The following formula shows this relationship:
ǒ
R pull*up t ǒV pull*up * V OL_maxǓńOL 1
OL 1 + I LǒOutput Leakage with V OUT + 3.5 VǓ
Ǔ
V OUT + V pull*upńǒR L ) R pull*upǓ R L t V OL_min
Because Id (OFF) may significantly increase if VOUT is
pulled high (up to several mA), Rpull-up resistor should be
connected to a supply that is switched OFF when the module
is in standby.
In addition to ensuring the selected Rpull-up resistor value
does not cause a false OFF State OL detection condition
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14
NCV8445
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
1
Figure 33. Transient Thermal Impedance
180
160
140
qJA (°C/W)
R(t), (°C/W)
100
1.0 oz
120
2.0 oz
100
80
60
0
200
400
600
COPPER HEAT SPREADER AREA
800
(mm2)
Figure 34. RqJA vs Copper Area
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15
1000
10
100
100
NCV8445
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
SOLDERING FOOTPRINT*
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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