MBRS140T3G, SBRS8140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Features • • • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 V Max @ 1.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection ESD Ratings: ♦ Human Body Model = 3B (> 8000 V) ♦ Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable All Packages are Pb−Free* Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal SMB CASE 403A MARKING DIAGRAM AYWW B14 G G B14 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds Cathode Polarity Band ORDERING INFORMATION Package Shipping† MBRS140T3G SMB (Pb−Free) 2,500 / Tape & Reel SBRS8140T3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 10 1 Publication Order Number: MBRS140T3/D MBRS140T3G, SBRS8140T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current TL = 115°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 1.0 A 40 Operating Junction Temperature TJ °C −65 to +125 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristic Thermal Resistance − Junction−to−Lead (TL = 25°C) Value Unit °C/W RqJL 12 ELECTRICAL CHARACTERISTICS Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR Value Unit V 0.6 mA 1.0 10 2 TC = 100°C TC = 125°C 0.2 TC = 25°C TC = -40°C TC = -55°C 0.02 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 2 TC = 100°C TC = 125°C 0.2 TC = 25°C TC = -40°C TC = -55°C 0.02 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 1.0 200 180 TJ = 125°C NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF C, CAPACITANCE (pF) 160 100°C 75°C 25°C 140 120 100 80 60 40 20 0 4 8 12 16 20 24 28 32 36 0 40 0 4 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 10 RATED VOLTAGE APPLIED RqJC = 12°C/W TJ = 125°C 9 8 7 6 5 4 DC 3 SQUARE WAVE 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (°C) 110 120 130 Figure 5. Current Derating (Case) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) I R , REVERSE CURRENT (mA) MBRS140T3G, SBRS8140T3G 5 DC SQUARE WAVE TJ = 125°C 4 π 5 3 CAPACITANCE LOAD 2 IPK IAV 10 = 20 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Power Dissipation http://onsemi.com 3 5 36 40 MBRS140T3G, SBRS8140T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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