ONSEMI SBRS81100T3G

MBRS1100T3G,
SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G
Preferred Devices
Schottky Power Rectifier
http://onsemi.com
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
Features









Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage − 100 Volts
175C Operating Junction Temperature
Guardring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
 Case: Epoxy, Molded
 Weight: 95 mg (approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal



Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2,500 units per reel
Cathode Polarity Band
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B1xG
G
B1
x
= Device Code
= C for MBRS1100T3
9 for MBRS190T3
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 10
1
Publication Order Number:
MBRS1100T3/D
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBRS190T3
MBRS1100T3
VRRM
VRWM
VR
Average Rectified Forward Current
TL = 163C
TL = 148C
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Operating Junction Temperature (Note 1)
Voltage Rate of Change
Value
Unit
V
90
100
A
1.0
2.0
A
50
TJ
−65 to +175
C
dv/dt
10
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (TL = 25C)
Symbol
Value
Unit
RqJL
22
C/W
ELECTRICAL CHARACTERISTICS
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25C)
Characteristic
VF
0.75
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25C)
(Rated dc Voltage, TJ = 100C)
IR
mA
0.5
5.0
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
ORDERING INFORMATION
Marking
Package
Shipping†
MBRS1100T3G
B1C
SMB
(Pb−Free)
2,500 Tape & Reel
SBRS81100T3G
B1C
SMB
(Pb−Free)
2,500 Tape & Reel
MBRS190T3G
B19
SMB
(Pb−Free)
2,500 Tape & Reel
SBRS8190T3G
B19
SMB
(Pb−Free)
2,500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
1K
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
20
10
TJ = 150C
5
2
100C
1
0.5
25C
0.2
0.1
0.05
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ = 150C
I R , REVERSE CURRENT ( A)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL ELECTRICAL CHARACTERISTICS
1
1.1 1.2 1.3
125C
100C
25C
0
10
20
30
40
50
60
70
80
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
90
100
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
3.2
2.8
TJ = 100C
2.4
2.0
SQUARE
WAVE
1.6
DC
1.2
0.8
0.4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.0
DC
1.5
1.0
SQUARE
WAVE
0.5
0
145
150
155
160
165
170
175
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TC, CASE TEMPERATURE (C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Case, Per Leg
C, CAPACITANCE (pF)
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.1
0.2
0.5
1
2
5
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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3
50
100
180
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.20
2.28
0.10
0.19
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRS1100T3/D