VISHAY 6F120M

6F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
FEATURES
• High surge current capability
RoHS
• Avalanche types available
COMPLIANT
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• RoHS compliant
TYPICAL APPLICATIONS
DO-203AA (DO-4)
• Converters
• Power supplies
PRODUCT SUMMARY
IF(AV)
• Machine tool controls
6A
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
IFSM
I2 t
VRRM
VALUES
UNITS
6
A
160
°C
9.5
A
50 Hz
159
60 Hz
167
A
50 Hz
134
60 Hz
141
Range
100 to 1200
V
- 65 to 175
°C
TJ
A2 s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VR(BR), MINIMUM
AVALANCHE VOLTAGE
V (1)
10
100
150
-
20
200
275
-
40
400
500
500
60
600
725
750
6F(R)
80
800
950
950
100
1000
1200
1150
120
1200
1400
1350
IRRM MAXIMUM
AT TJ = 175 °C
mA
12
Note
(1) Avalanche version only available from V
RRM 400 V to 1200 V
Document Number: 93519
Revision: 29-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
1
6F(R) Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 6 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
Maximum non-repetitive peak reverse power
PR
(1)
10 µs square pulse, TJ = TJ maximum
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2√t
I2√t
for fusing
No voltage
reapplied
UNITS
6
A
160
°C
9.5
A
4
K/W
159
No voltage
reapplied
100 % VRRM
reapplied
VALUES
167
Sinusoidal half wave,
initial TJ =
TJ maximum
141
127
116
82
t = 0.1 to 10 ms, no voltage reapplied
1270
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.63
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.86
Low level value of forward slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
15.7
High level value of forward slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
5.6
Ipk = 19 A, TJ = 25 °C, tp = 400 µs rectangular wave
1.10
VFM
A2s
90
100 % VRRM
reapplied
Low level value of threshold voltage
Maximum forward voltage drop
A
134
A2√s
V
mΩ
V
Note
(1) Available only for avalanche version, all other parameters the same as 6F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum junction
temperature range
TJ
- 65 to 175
Maximum storage
temperature range
TStg
- 65 to 200
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
case to heatsink
RthCS
Mounting torque, ± 10 %
°C
DC operation
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2
2.5
K/W
Mounting surface, smooth, flat and greased
Lubricated threads
(Not lubricated threads)
Approximate weight
Case style
UNITS
0.5
1.2
(1.5)
N·m
(lbf · in)
7
g
0.25
See dimensions - link at the end of datasheet
For technical questions, contact: [email protected]
oz.
DO-203AA (DO-4)
Document Number: 93519
Revision: 29-Sep-08
6F(R) Series
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 6 A
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.34
0.29
120°
0.44
0.48
90°
0.57
0.63
60°
0.85
0.88
30°
1.37
1.39
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
175
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
6F(R) Series
RthJC (DC) = 2.5 K/W
170
Conduction Angle
165
160
90°
60°
30°
120°
180°
155
0
1
2
3
4
5
6
175
6F(R) Series
RthJC (DC) = 2.5 K/W
170
Conduction Period
165
160
60°
90°
120°
30°
180°
DC
155
7
0
2
4
6
8
10
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
6
R
180°
120°
90°
60°
30°
5
4
30
K/W
15
20
K/
W
40 K
/W
K/
W
-D
elt
a
R
50 K
/W
RMS Limit
3
th
SA
=
2
Conduction Angle
1
6F(R) Series
TJ = 175°C
0
0
1
2
3
4
5
Average Forward Current (A)
0
6
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93519
Revision: 29-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
3
6F(R) Series
Vishay High Power Products Standard Recovery Diodes
Maximum Average Forward Power Loss (W)
(Stud Version), 6 A
8
R
DC
180°
120°
90°
60°
30°
7
6
5
th
SA
=
20
K/
W
10
15
K/
W
30
K/W
-D
el
ta
K/
W
R
40 K
/W
4
3 RMS Limit
50 K
/W
Conduction Period
2
6F(R) Series
TJ = 175°C
1
0
0
2
4
6
8
Average Forward Current (A)
10
0
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
150
1000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ= 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
140
130
120
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
110
100
90
80
70
60
6F(R) Series
50
6F(R) Series
100
TJ = 25°C
10
TJ = 175°C
1
40
1
10
0
100
0.5
150
140
130
120
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 175°C
No Voltage Reapplied
Rated VRRM Reapplied
110
100
90
80
70
60
50
40
30
0.01
6F(R) Series
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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4
1.5
2
2.5
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance ZthJC (K/W)
Peak Half Sine Wave Forward Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
1
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
10
Steady State Value
RthJC = 2.5 K/W
(DC Operation)
1
6F(R) Series
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
For technical questions, contact: [email protected]
Document Number: 93519
Revision: 29-Sep-08
6F(R) Series
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 6 A
ORDERING INFORMATION TABLE
Device code
6
F
R
120
M
1
2
3
4
5
1
-
Current rating: Code = IF(AV)
2
-
F = Standard device
3
-
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
-
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diode)
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93519
Revision: 29-Sep-08
http://www.vishay.com/doc?95311
For technical questions, contact: [email protected]
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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