AN11060 TEA172X 5 W to 11 W Power Supply/USB charger Rev. 1.2 — 8 June 2012 Application note Document information Info Content Keywords Ultra-low standby power, constant output voltage, constant output current, primary sensing, integrated high-voltage switch, integrated high-voltage start-up, USB charger, standby supply, 5 W to 11 W supply. Abstract The TEA172X are primary sensing controllers for power supplies up to 5 W or 11 W (depending on version) with an integrated high-voltage switch. No-load power is as low as 10 mW (depending on version) and they surpass the Energy Star 5 level requirement (30 mW). When the maximum output power is exceeded, the IC changes from constant voltage mode to constant current mode, which is ideally suited for battery charging. AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Revision history Rev Date Description v.1.2 20120608 third issue v.1.1 20120501 second issue v.1 20120130 first issue Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 1. Introduction The TEA172X family comprise a flyback controller with primary sensing and integrated high-voltage switch. An advanced burst mode and integrated high-voltage start-up circuit ensure a low no-load power consumption, depending on the version down to 10 mW. When the maximum output power is reached, the constant output voltage control changes to a constant output current control for use as a charger. Versions are available for maximum output power of 5 W or 11 W. The device is packaged in a space saving SO7 package with high-voltage spacer. All values mentioned in this application note are typical values. The minimum and maximum and spread figures can be found in the TEA172X data sheet. 2. Scope This application note describes the functionality, the control functions and the basic dimensioning of the circuit components of the TEA172X low-power adapter. Detailed transformer calculation is available in a separate calculation sheet. 3. TEA172X low-power adapter The TEA172X features enable power engineers to design reliable, cost-effective and efficient adapter supplies with low no-load power consumption. These features result in the TEA172X needing a minimum number of external components. 3.1 Key features • Flyback controller with integrated 700 V MOSFET • Available maximum output power of 5 W or 11 W • No-load power consumption down to 10 mW at 5 W output power depending on the version • Primary sensed output voltage control, eliminating optocoupler for lower overall system costs. • High average efficiency above 75 % over the entire load range thanks to advanced control modes. • USB 1.1 and 1.2 compliant for mobile phone chargers • Available in SO7 package with high-voltage spacer 3.1.1 Applications • Mobile communications – Mobile or smart phone charger – Tablet PC charger AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger • Home appliances – Washing and drying machines – Refrigerators and freezers – Dish washers – Induction cookers – Air conditioners • Computing and consumer – E-readers – Portable audio/video equipment – Set-top boxes – PC peripherals • Industrial and residential – Smart metering – Lighting – Home and building automation – Heating, Ventilation, Air Conditioning (HVAC) equipment – Industrial automation and control 3.2 Basic application schematic Rpreload Rinrush + VOUT - VCC FB DRAIN TEA172x GND SOURCE aaa-000872 Fig 1. AN11060 Application note Basic application schematic All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 4. Pin description 7 DRAIN 3 6 SOURCE 4 5 VCC GND1 1 GND2 2 GND3 FB TEA172x aaa-001539 Fig 2. Table 1. Pinning diagram SO7 TEA172X Pinning description Pin Name Description 1 GND1 2 GND2 3 GND3 Ground connection from driver and control part. Pins GND1 and GND3 are thermally connected to the MOSFET and must be connected to a copper plane for efficient cooling. 4 FB Feedback input. Senses the voltage on the auxiliary winding via a resistive divider during the secondary stroke. The sense voltage represents the voltage on the output winding At constant output voltage, the sensed voltage is regulated at 2.5 V. When the sensed voltage drops below 2.5 V, the regulation changes to Constant Current (CC) mode. The OverVoltage Protection (OVP) level is 3.2 V Demagnetization detection guarantees discontinuous operation. It checks that the voltage of the auxiliary winding drops below 50 mV after the secondary stroke. AN11060 Application note 5 VCC Supply voltage. At start-up, an internal current source charges the capacitor until VCC(startup). VCC(startup) level is around 17 V. The device starts switching and the auxiliary winding takes over the supply. The VCC(stop) level on the VCC pin is 8.5 V. 6 SOURCE SOURCE connection of the internal MOSFET. The current through the MOSFET is monitored using a resistor from the SOURCE pin to ground. The peak level in burst mode is around 120 mV. The peak level in other modes varies between 120 mV and 600 mV. (Exact values depend on the dV/dt value of the SOURCE pin. 7 DRAIN DRAIN connection of the internal MOSFET. The breakdown voltage is 700 V. The high-voltage start-up current source is connected to the DRAIN pin. All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5. System description 5.1 Introduction Throughout this section, refer to the basic application schematic, Figure 1 5.2 Supply At start-up, an internal current source, connected to the DRAIN charges the capacitor connected to the VCC pin see Figure 3. When the voltage level reaches 17 V (VCC(startup)), the internal current source is switched off and the IC starts switching. The IC now runs using the charge on the capacitor connected to the VCC pin. When the internal MOSFET starts switching, the voltage, generated at the auxiliary supply winding of the transformer provides the supply, see Figure 4. Under some circumstances, the IC does not start switching (due to protection) or the auxiliary winding does not provide the supply voltage. The result is, the capacitor VCC pin voltage drops to 8.5 V (VCC(stop)), and the internal current source is enabled. The internal current source now charges the capacitor up to 17 V (VCC(startup)). The sequence is repeated, see Figure 5 It is possible to supply the IC externally, however the supply voltage must be above 17 V (VCC(startup)) with some margin to guarantee start-up. The rise time of the external supply voltage must be below 0.1 V/μs. If steeper, use a filter of for example, a 220 Ω series resistor and a 1 μF decoupling capacitor on the VCC pin. The example used is based upon a 20 V external supply. Rpreload Rinrush + VOUT - (1) VCC (2) DRAIN FB TEA172x GND SOURCE aaa-000889 (1) Auxiliary winding also provides VCC (2) Primary sensing via auxiliary winding Fig 3. AN11060 Application note Charging the VCC capacitor All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Rpreload Rinrush + VOUT - (1) VCC (2) DRAIN TEA172x FB GND SOURCE aaa-000890 (1) Auxiliary winding also provides VCC (2) Primary sensing via auxiliary winding Fig 4. Rectified voltage of the auxiliary winding takes over the VCC supply VCC (2) (2) VCC(startup) 17 V VCC(stop) 8.5 V (1) (3) (4) (1) aaa-000891 (1) HV current source on (2) HV current source off (3) Switching start, VAUX builds up (4) VAUX takes over VCC Fig 5. AN11060 Application note Voltage on the VCC pin All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.3 Operating modes From no-load to maximum load and in CC mode, the TEA172X uses different operating modes as follows. Rpreload Rinrush + VOUT Lp VCC FB DRAIN TEA172x GND SOURCE lpk I aaa-000892 Fig 6. Basic circuit and relevant parameters The regulation of a flyback converter is based upon regulating the transferred energy according to Equation 1. 2 P o = 0.5 × L p × I pk × f sw × η (1) Where: • • • • • Po = Output power Lp = Primary inductance of the transformer Ipk = The peak value of the primary current at switch-off from the MOSFET fsw = Switching frequency η = Efficiency convertor The output power is equal to the energy, stored per stroke, times the number of strokes per second times the efficiency. Though not accurate, the basic formula is enough to understand the control modes. The different operating modes include: • • • • • AN11060 Application note Constant Voltage Burst mode (CVB) regulation control Constant Voltage peak Current mode (CVC) regulation control Constant Voltage Frequency mode (CVF) regulation control Constant Current Frequency mode (CCF) regulation control Constant Current peak Current mode (CCC) regulation control All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.3.1 Burst mode Figure 7 shows burst mode with energy saving. At fixed time intervals, the burst period is started. Each burst period starts with one stroke at a fixed Ipk level. After the stroke, the voltage is sensed at the FB pin near the end of the secondary stroke. If the sensed voltage is equal or above 2.5 V, no additional strokes are made. The IC now enters energy save mode until the next burst period. If the sensed voltage at the FB pin is below 2.5 V, additional strokes are made. This action continues until the sensed voltage level on the FB pin rises above 2.5 V. Thereafter, the IC goes into energy save mode until the next burst period. (1) (2) Iprim (3) 0.08 A 1 2 3 1 44 μs = tswitch 1.13 ms = tburst VOUT (4) (5) 5.10 V Isupply 600 μA 130 μA (6) aaa-000893 (7) (1) Start of burst (2) End of burst (3) Minimum supply current for energy save. Only the oscillator active (4) VOUT(pk) reaches control value in 1 or 2 cycles (5) IC switches to minimum supply current, energy save (6) IC switches to nominal supply just before new burst start. Timing and currents given are for TEA1721BT version with a fburst = 885 Hz Fig 7. Burst mode with energy saving The fixed time interval between the start of the burst period enables the calculation of the required output capacitor to fulfill the load step of the USB 1.1 specification (VOUT > 4.1 V for IOUT load step from 0 => 0.5 A). The primary sensing concept cannot detect any changes on secondary side while the IC is not switching. During the time between burst periods, the output capacitor has to manage the load changes. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Iprim 1 1 1.13 ms = tburst Iload 0.50 A 0.00 A VOUT 4.85 V 4.85 V 4.10 V 4.10 V 130 μA 600 μA (1) aaa-000895 Timing and currents given are for TEA1721BT version with a fburst = 885 Hz Fig 8. VOUT for load step occurring between burst periods First when the next burst starts, the output voltage is monitored and the mode changes to provide for the increased load. To speed up the change from burst mode to a higher power mode, the IC immediately switches from CVB mode to CVC mode once the release threshold voltage on the FB pin (Vth(rel)FB) is less than 2.4 V. Low no-load power is achieved by: • A low burst period repetition rate • Switching the IC to energy saving mode between the burst periods. This action reduces current consumption by a factor of 5. Reduced audible noise is achieved by: • Selecting the minimum Ipk (Ipk(min)) for burst mode • Using a 22.5 kHz repetition rate of the strokes within the burst period. This frequency is above the audible limit. No-load power decreases as a longer time interval between burst periods is selected. However, using longer time intervals the output capacitor increases to compensate for the load steps that occur between burst periods. An overview of available burst frequencies, no-load power and output capacitor value is given in Table 2 fburst versus Cout and PIN(no-load). When the output load increases, more strokes per burst period are added to transfer enough energy. Finally, the whole burst period is filled with strokes and the IC is switching continuously. When the load increases further, the IC goes into the next mode, CVC. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Po in burst mode is calculated using Equation 2 2 P o = 0.5 × L p × I pk ( min ) × f burst × average number of strokes × η (2) Where: • fburst = the fixed burst frequency, determining the fixed time between bursts • Ipk(min) = the fixed minimum Ipk level in burst The level of Ipk is determined by measuring the voltage over the resistor from SOURCE pin to ground. The peak level, when measured in an application with an oscilloscope, is approximately 120 mV. This measured level includes internal propagation delay and differs from the value, given in the data sheet. Remark: When the number of strokes in the burst period increases, the exact quantity of strokes can vary per burst period. This state is normal behavior in this mode. The average number of strokes over more burst periods is regulated to deliver the required output power. 5.3.2 CVC mode CVC mode starts immediately after burst mode ends. The IC continuously switches at 22.5 kHz = fmin and peak current is equal to Ipk(min). fmin is the minimum switching frequency in continuous mode. When more output power is needed, switching frequency fmin (22.5 kHz) is maintained constant and the Ipk level is increased to deliver more power. Iprim Ipk(max) Ipk(min) 44 μs 44 μs VOUT 5.00 V aaa-000897 Remark: The on-time (ton) increases with the amplitude of Ipk, which is not shown on these simplified graphs. Fig 9. CVC mode with Ipk control In this mode, the peak voltage level on the SOURCE pin increases from 120 mV to 565 mV. (Levels measured in an application with an oscilloscope, inclusive of propagation delay. Differs from the data sheet). AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Po in CVC mode is calculated using Equation 3. 2 P o = 0.5 × L p × I pk × f min × η (3) Where: • Ipk = Varying from Ipk(min) to Ipk(max), a result of VSOURCE(pk) changing from 120 mV to 565 mV on the SOURCE pin. • fmin = Minimum switching frequency in continuous mode (22.5 kHz) At Ipk(max), the IC switches to CVF mode. 5.3.3 CVF mode In CVF mode, Ipk is maintained constant on Ipk(max) and the frequency is increased to deliver the additional required power. Iprim Ipk(max) 44 μs 40 μs 30 μs 19.4 μs VOUT 5.00 V aaa-000902 Fig 10. CVF mode with frequency regulation The switching frequency increases in this mode from fmin (22.5 kHz) to fmax (51.5 kHz). Output power is calculated using Equation 4 2 P o = 0.5 × L p × I pk ( max ) × f sw × η (4) Where: • Ipk(max) = Fixed maximum Ipk (VSOURCE(pk) on SOURCE pin 565 mV) • fsw = Switching frequency varies from fmin (22.5 kHz) to fmax (51.5 kHz) Maximum output power is calculated using Equation 5 2 P o ( max ) = 0.5 × L p × I pk ( max ) × f max × η (5) This formula is useful for dimensioning the circuit as used in Section 6.3. When the maximum power is exceeded, the IC switches to CCF mode. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.3.4 CCF mode CCF mode is the first Constant Current (CC) mode. In CC mode, the current is kept constant at IOUT(max). VOUT varies with the equivalent resistive load value. For a linear decreasing resistive value of the load, VOUT also decreases linearly. The CC mode is intended to charge batteries. (1) (2) Iprim Ipk(max) 19.4 μs 44 μs 30 μs 8.7 μs 17.4 μs VOUT (3) 5V Icp 2.5 V 1A aaa-000903 (1) Primary current, hot side (2) Secondary current, cold side (3) The converter operates in CCF for VOUT from 5.3 V to 2.5 V and delivers 1 A to the charging port Fig 11. CCF mode regulation by frequency The output power formula is the same as for CVF mode, see Equation 6 2 P o = 0.5 × L p × I pk ( max ) × f sw × η (6) Now fsw is used to maintain IOUT constant, while VOUT becomes the voltage over the load at IOUT(max). fsw drops from fmax (51.5 kHz) to fmin (22.5 kHz) while decreasing the resistive value of the load. When fmin is reached, the IC switches to CCC mode. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.3.5 CCC mode In CCC mode, the switching frequency is maintained constant while the Ipk value is reduced. The Ipk value is regulated to maintain IOUT(max) constant. Ipk(p) 0.39 A (1) (2) 44 μs 44 μs VOUT (3) 2.5 V Icp 1A 0V aaa-000904 (1) Primary current, hot side (2) Secondary current, cold side (3) In most applications, the converter operates in start-stop cycles for VOUT < 1 V because the auxiliary winding VCC < VCC(stop). Fig 12. CCC mode regulation by Ipk Output power is calculated using Equation 7 2 P o = 0.5 × L p × I pk × f min × η (7) To keep IOUT(max) constant, Ipk is reduced from Ipk(max) to Ipk(min) while the resistive value of the load is further decreased. Reducing the resistive value of the load reduces VOUT. The auxiliary winding voltage, which is related to VOUT, also drops. When the auxiliary winding voltage, supplying VCC, drops below VCC(stop), the IC stops and performs a restart. The IC remains in hiccup mode until the resistive value of the load is high enough to enable VCC supply above VCC(stop). The moment VCC(stop) is reached, depends on the transformer construction and the supply circuit. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.3.6 Overview control modes Figure 13 summarizes the control modes. CVB CVC fsw fmax = 51.5 kHz CP CVF CCF CCC (3) Ipk 0.39 A (1) fmin = 22.5 kHz 0 kHz/0 W TEA1721 (5 W) 0.12 W TEA1723 (11 W) 0.26 W Vcp 5V 0.08 A Pcp 2.0 W 4.4 W 5.0 W 11 W ~2.0 W ~4.4 W ~1.0 W ~2.2 W 0W 0W Icp 1A (2) 2V 0 V/∞ Ω TEA1721 (5 W) 200 Ω TEA1723 (11 W) 91 Ω Rload 12.5 Ω 5.7 Ω 5.0 Ω 2.25 Ω ~2.0 Ω ~1.0 Ω 0 Ω ~0.91 Ω ~0.45 Ω 0 Ω aaa-000905 (1) Ipk and fsw as a function of Pcp (power to charging port) (2) Vcp and Icp as a function of Rload (load impedance to charging port) (3) When VOUT gets very low, VCC drops below VCC(stop) and IC enters hiccup mode Fig 13. Overview control modes The control graph is symmetrical, with both VOUT on the left and IOUT on the right constant. 5.4 Relationship between no-load and max load As most of the parameters are fixed inside the IC, the different control modes and output power are all interdependent. The following summarizes the relevant formulas. Burst mode: 2 P o = 0.5 × L p × I pk ( min ) × f burst × average number of strokes per burst × η (8) CVF mode (Po(max) is reached for fmax) 2 P o = 0.5 × L p × I pk ( mdx ) × f sw × η (9) For burst mode, PIN(min) is calculated using Equation 10. PIN(min) is reached at one stroke per burst period, excluding the efficiency: 2 P IN = 0.5 × L p × I pk ( min ) × f burst (10) For CVF Po(max) is defined as: 2 P o = 0.5 × L p × I pk ( max ) × f max × η AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 (11) © NXP B.V. 2012. All rights reserved. 15 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Except for Lp and the value for Ipk, all parameters (fburst, fmax, ratio Ipk(min), Ipk(max)) are fixed in the IC. Therefore, the ratio between Po(max) and PIN(min) is fixed. As Po(max) is a spec point, start with selecting Lp and Ipk(max) so that Po(max) can be reached. PIN(min) follows from the values chosen for Po(max) = η × P IN ( max ) . P o ( max ) Using P IN ( max ) = ----------------- Equation 12 can be written. η 2 P IN ( min ) = ( P o ( max ) ÷ η ) × ( I pk ( min ) ÷ I pk ( max ) ) × ( f burst ÷ f max ) (12) Example: In the following example, the results from a 5 W charger with an efficiency of 75 % are used. Main parameter: • • • • Lp = 1.75 mH Ipk(max) = 0.39 A => Ipk(min) / 4.9 = 0.080 A fmax = 51.5 kHz fburst = 885 Hz (13) 2 P o ( max ) = 0.5 × L p × I pk ( max ) × f max × η = 0.5 × 1.75 × 10 –3 2 3 × 0.39 × 51.5 × 10 × 0.75 = 5.14 W For a no-load condition, input power PIN(min) is of interest. 2 P IN ( min ) = 0.5 × L p × I pk ( min ) × f burst = 0.5 × 1.75 × 10 –3 2 × 0.080 × 885 = 0.005 W (14) To remain in regulation, occasional additional strokes are made in the burst period. In practice PIN(min) is about 40 % higher, at approximately 7 mW. Remark: The total PIN(min) is higher due to additional losses in the circuit. These losses are described in Section 5.5. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 16 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.5 Total input power at no-load The calculated input power PIN(min) at no-load is only from the converter and at a minimum input voltage. In an actual application, there are additional losses present. All no-load losses are shown in Figure 14. Rpreload (8) Rinrush + 220 pF (1) 100 kΩ (5) (7) VOUT - 470 Ω (2) (6) (4) (3) VCC DRAIN TEA172x FB GND SOURCE aaa-000906 (1) Rectifier 0.1 µA (40 °C), 325 V, 2 × 0.1 mW (2) Electrolytic capacitor 10u 400 V 10 µA, 375 V (estimation) 3.5 mW (3) FB sensing, only dissipating during pri + sec stroke, 0.1 mW (4) VCC = 12 V, I = 0.1 mA, 3 mW (5) Snubber 2 mW (6) Leakage HV current source, 1 µA, 375 V, 0.4 mW (7) Vsec = 5 V, I = 0.8 mA, 4 mW (8) The minimum transferred energy (fburst × 0.5 × Lp × Ipk(min)2, only one cycle per burst) is divided between the VCC supply and the preload. Fig 14. No-load losses The input power is higher in practice due to the additional losses: • Increase of Ipk at higher input voltage (IC has no VIN compensation). The difference between 85 V (AC) and 264 V (AC) is about an additional 2 mW • Leakage main electrolytic capacitor (3.5 mW) • Leakage bridge diodes, leakage high-voltage start-up current source (0.5 mW) • Snubber losses (2 mW) Combining the additional losses, PIN(min)tot at no-load for fburst = 885 Hz equals: PIN(min)tot = 7 + 2 + 3.5 + 0.5 + 2 = 15 mW fburst determines the value of PIN(min), a lower fburst leads to a lower PIN(min). However, other losses including, electrolytic capacitor leakage, diode bridge leakage must be minimized to achieve low no-load power. For the lowest burst frequency of 420 Hz, the calculation is as Equation 15: AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 17 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 2 P IN ( min ) = 0.5 × L p × I pk ( min ) × f burst = 0.5 × 1.75 × 10 –3 2 × 0.080 × 420 = 0.0024 W (15) Practical value (in regulation) PIN(min) is 40 % higher at 3.4 mW. The additional losses are lower when they are related to fburst: • Increase of Ipk at higher input voltage (IC has no VIN compensation). The difference between 85 V (AC) and 264 V (AC) is about an additional 1 mW • Leakage main electrolytic capacitor (3.5 mW) • Leakage bridge diodes, high-voltage start-up current source (0.5 mW) • Snubber losses (1 mW) PIN(min)tot = 3.4 + 1 + 3.5 + 0.5 + 1 = 9.4 mW For an overview of burst frequencies, see Table 2 5.6 Relationship between fburst and output capacitor The USB 1.1 specification (see Section 7.1.1) requires that VOUT remains above 4.1 V for a load step of 0 A => 0.5 A. This condition is critical in burst mode as the primary sensing concept is "blind" of conditions on the secondary side while the IC is in energy save mode. Iprim Ipk(min) 1 1 1.13 ms = tburst Iload 0.50 A 0.00 A VOUT 4.85 V 4.85 V 4.10 V 4.10 V 130 μA 600 μA aaa-000909 Fig 15. fburst and output capacitor The worst case is when the load step occurs as the IC enters energy save mode. The maximum time the capacitor has to maintain the output voltage is 1/fburst. The capacitor value can be calculated using Equation 16: C = I load ÷ ( f burst × V drop ) (16) Where: • Iload = current after load step • Vdrop = VOUT at the beginning of load step −4.1 V AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 18 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger The formula indicates the relationship between burst frequency fburst. and the output capacitor. A lower fburst leads to a lower PIN(min)tot at no-load, but needs a larger output capacitor to fulfill the load step requirement. Example: Due to the internal load line, VOUT drops when the load increases. VOUT must remain higher than 4.75 V. Therefore, VOUT at no or low load during burst is always higher than the specified minimum VOUT voltage of 4.75 V. In practice, the lowest VOUT in burst where no-load step is detected, is 4.85 V. As a result, the voltage on the output capacitor can drop from 4.85 V to 4.1 V. • Vdrop = 0.75 V • Iload = 0.5 A Equation 17 show the calculated value of Cout for an fburst of 885 Hz: C out ( min ) = 0.5 ÷ ( 885 × 0.75 ) = 753 × 10 –6 (17) The results in Equation 17 represents the minimal required value for the capacitor (C). As most electrolytic capacitors have a tolerance of −20 % on the low-side, divide the calculated value by 0.8 to obtain the nominal value. See Equation 18 C out ( nom ) = 753 × 10 –6 ÷ 0.8 = 941 × 10 –6 (18) Table 2 provides an overview of the (nominal) output capacitor value related to the burst frequency and no-load PIN. Table 2. fburst fburst as a function of Cout and PIN(no-load) Cout(nom) PIN(no-load) TEA1721 TEA1723 420 Hz 2 × 1000 μF < 10 mW < 17 mW 885 Hz 2 × 470 μF < 16 mW < 26 mW 1260 Hz 680 μF < 22 mW < 35 mW 1750 Hz 2 × 820 μF < 33 mW < 50 mW The version with fburst = 1750 Hz with large output capacitance is intended for applications with high requirements for the load step behavior. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 19 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.7 Feedback In a primary sensed system, the output voltage is regulated by measuring the voltage of an auxiliary winding on primary side. Rpreload Rinrush + VOUT - (2) VCC (1) DRAIN TEA172x FB (3) GND SOURCE aaa-000910 (1) Primary sensing via auxiliary winding (2) Auxiliary winding also provides VCC (3) Regulation level on FB pin is 2.5 V Fig 16. Feedback from auxiliary winding For optimal matching of the auxiliary winding voltage and the output voltage, tightly couple the transformer auxiliary winding to the secondary winding. Due to the primary sensing concept, the secondary voltage is regulated before the secondary diode. Changes in voltage drop over the diode are not corrected and are reflected in the VOUT level. Figure 17 shows the waveform on the auxiliary winding. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 20 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger (1) (2) Vs (3) VAUX -VDC / NAUX Is Ipks = Ipk(p)/n aaa-000911 (1) No accurate measurement possible during ringing (2) Voltage drops due to decreasing voltage over the secondary diode with decreasing current (3) Measurements done towards the end of the secondary stroke at minimal secondary current to increase accuracy and avoid ringing. Fig 17. Auxiliary winding waveform VOUT is measured during the secondary stroke. To increase the accuracy, VOUT is sampled near the end of the secondary stroke. This timing minimizes the influence of the voltage drop over the secondary diode because the diode current is close to zero. It also minimizes the error, due to ringing. As the secondary stroke time varies with the value of Ipk (the higher Ipk, the longer the secondary stroke time), the sample time is adapted accordingly. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 21 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Vs VAUX -VDC/NAUX (1) Ip Ipk(p) ls aaa-000912 (1) To increase measurement accuracy, the position of the measurement pulse is adapted to the duration of the secondary current. A measurement is taken near the end of the stroke where the secondary stroke is close to zero and ringing is minimal Fig 18. Adaptive sample time Configure the resistive divider on the FB pin to deliver 2.5 V at the FB pin near the end of the secondary stroke in burst mode. Take into account that the voltage near the end of the secondary stroke is VOUT + Vdiode. 5.8 Demagnetization protection The signal of the auxiliary winding on the FB pin is also used for demagnetization protection. That is, to determine if the secondary stroke has ended and all stored energy in the transformer is transferred to secondary winding. To release the demagnetization protection, the voltage on the FB pin must drop below 50 mV after the secondary stroke has started. When no demagnetization is detected, the next primary stroke is prohibited until demagnetization is true. This condition guarantees discontinuous operation. 5.9 Supply from the auxiliary winding The supply of the IC is supplied from an auxiliary winding. It is possible to use the feedback auxiliary winding or a separate winding. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 22 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Rpreload Rinrush + VOUT - (2) VCC (1) DRAIN TEA172x FB GND SOURCE aaa-000913 (1) Primary sensing via auxiliary winding (2) Auxiliary winding also provides VCC Fig 19. Supply from the auxiliary winding When designing the auxiliary winding, consider the waveforms on the winding as shown in Figure 20: (1) VAUX (2) VCC -VDC/NAUX Ip Ipk(p) ls aaa-000914 (1) Actual VCC, resulting from peak rectification of the ringing (2) VCC, expected from the transformer calculations using winding ratio’s Fig 20. VCC higher than anticipated due to ringing As the power consumption of the IC is low, the rectified voltage of the auxiliary winding follows the peak of the ringing (peak rectification). Therefore, the supply voltage is much higher than anticipated. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 23 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger The amount of ringing depends on the coupling of the auxiliary winding with the primary and secondary winding. As necessary, adapt the number of auxiliary windings to obtain the correct supply voltage. The supply voltage range is large, approximately 8.5 V to 35 V. For optimum efficiency and no-load input power, design VCC for 10 V to 12 V at no-load. As the ringing increases for higher loads, demo board VCC rises from 12 V at no-load to 22 V at maximum load. 5.10 Soft start To reduce stress at start-up, the IC starts in CC mode with reduced Ipk. The output current is limited to 1 A during start-up. Charging of the output capacitor of 2 × 470 μF takes less than 5 ms. 5.11 Load line compensation For stable regulation, it is necessary that the voltage on the FB pin drops for higher loads. This leads to a load line from zero load to full load of 450 mV. The IC has a built-in load line compensation that limits the load line from zero to full load below 200 mV. 5.12 Jitter To improve ElectroMagnetic Interference (EMI), the switching frequency varies around the center value. This results in reduced peak levels around the switching frequency. Jitter is present in all modes and amounts approximately ±8 %. The jitter frequency is between 100 Hz to 400 Hz. To keep Po constant while varying fsw, Ipk is adapted accordingly as can be derived using Equation 19. 2 P o = 0.5 × L p × I pk × f sw × η (19) 5.13 Protective features The following protective features are implemented: • • • • • UnderVoltage Protection (UVP) on the VCC pin OverVoltage Protection (OVP) VOUT (via FB pin) OverTemperature Protection (OTP) Demagnetization protection Open/short circuit protection on the FB pin The IC can also handle a short-circuit on the secondary side in a safe way. The behavior is described in Section 6.5. 5.13.1 UnderVoltage Protection (UVP) on the VCC pin The UVP on the VCC pin prevents unpredictable behavior when the supply voltage drops below the minimum level needed for operation. The UVP level and action taken are as follows: • UVP: VCC < 8.5 V restarts the IC AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 24 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Restart causes switching to stop and the high-voltage current source is enabled to charge the VCC capacitor. When VCC rises above 17 V (VCC(startup)), the high-voltage current source is disabled and switching restarts. If an error persists, the sequence repeats itself. This condition is known as “hiccup mode”. 5.13.2 OverVoltage Protection (OVP) on VOUT The voltage on secondary side is monitored using VFB (measured on the FB pin). Under normal operation, the VFB is approximately 2.5 V when sampled during the secondary stroke. If VFB > 3.2 V, a forced restart is performed. • OVP secondary side: Sampled voltage on pin FB > 3.2 V causes the IC to restart When the sampled voltage on pin FB > 3.2 V, switching stops. The auxiliary winding no longer provides the VCC supply and VCC drops. When required, the IC waits until the VCC supply < 8.5 V before enabling the high-voltage current source to charge the VCC capacitor. When VCC(startup) > 17 V, the high-voltage current source is switched off and the switching is re-enabled. If the error persists and the sampled voltage on pin FB > 3.2 V, switching stops, the sequence repeats itself. This condition is known as “Hiccup mode”. The level of overvoltage is calculated as follows: • Sampled voltage FB pin for VOUT = 5 V: 2.5 V • Voltage on secondary winding before the diode: 5.3 V • Ratio voltage secondary winding divided by the sampled voltage the FB pin = 5.3 V / 2.5 V = 2.12 • Voltage (secondary winding) for the sampled voltage FB = 3.2 V: 3.2 V × 2.12 = 6.8 V The output voltage must rise above 6.8 V before OVP is triggered. In practice, OVP triggers at an output voltage between 6.5 V and 6.8 V. However, it depends on the steepness of the VOUT increase. 5.13.3 OverTemperature Protection (OTP) When the temperature of the IC increases above 150 °C, OTP is activated. The IC stops switching and VCC drops. When VCC falls below the VCC(stop) of 8.5 V, the high-voltage current source charges the VCC capacitor until 17 V (VCC(startup)). The IC does not start switching until the die temperature drops < 100 °C. During the waiting time, VCC cycles between charging to VCC(startup) then discharges to VCC(stop). The hysteresis from 150 °C to 100 °C ensures that no dangerous situations occur. 5.13.4 Demagnetization protection Demagnetization protection is implemented to check that the secondary stroke has ended before enabling the next primary stroke. This condition ensures discontinuous operation and prevents stress in overload conditions. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 25 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.13.5 FB pin open and short-circuit protection The FB pin detects if there is an AC voltage present on the pin. When the voltage on the pin does not alternate below and above 50 mV, switching is stopped. This action prevents the presence of an uncontrolled output voltage when the FB pin is open or shorted to ground. 5.13.6 Protection features overview table Table 3. Protection feature overview Protection feature Level Action VCC UVP 8.5 V restart VOUT OVP VFB pin > 3.2 V restart OTP 150° stop switching until T < 100 °C Demagnetization VFB < 50 mV hold next primary stroke until demagnetization has occurred FB pin open or short-circuit AC detection FB pin stop switching 6. Application 6.1 Application diagram Figure 21 shows the demo board schematic configured as a 5 W charger application. Following the schematic each component from the AC input to the output stage is explained. At the end of this section the schematic of an 11 W charger is given. Also the main differences with the 5 W application are described. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 26 of 50 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx 1 T1 C4 2.2 nF 50 V D8 6 NXP Semiconductors AN11060 Application note L1 R9 100 Ω + 1.5 mH 3 C9 220 pF 500 V R1 D1 1N4007 1000 V J1 L 4 C1 4.7 μF 400 V C2 4.7 μF 400 V R4 470 Ω R10 5.5 kΩ 5V Transformer Wurth T4 D5 1N4007 1000 V 10 Ω C5 470 μF 10 V - 5 D2 1N4007 1000 V RF1 R3 100 kΩ C6 470 μF 10 V D7 PMLL4148L 90 V (AC) to 265 V (AC) IC1 J2 N GND1 GND2 GND3 C7 D3 1N4007 1000 V D4 1N4007 1000 V 10 pF 50 V R2 FB 8 1 2 TEA1721BT 3 6 4 5 DRAIN Rsense 1.65 Ω R6 12 Ω SOURCE VCC C8 10 nF 50 V C3 10 μF 50 V RFB1 19.5 kΩ 10 kΩ RFB2 5.73 kΩ aaa-000918 AN11060 27 of 50 © NXP B.V. 2012. All rights reserved. Fig 21. Demo board schematic (5 W) L2 1.5 mH TEA172X 5 W to 11 W Power Supply/USB charger Rev. 1.2 — 8 June 2012 All information provided in this document is subject to legal disclaimers. 10 kΩ SL44 4A 40 V 8 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.1.1 Input and EMI filter Figure 21 shows fuse resistor RF1 that is part of the input circuit. RF1 is a 2 W fusible resistor designed to limit the inrush current and provides primary side short-circuit protection. For mains rectification, standard diodes are used, however the use of a diode bridge is also possible. Capacitors C1 and C2 form the main electrolytic capacitor, C1, C2, L1, L2, R1, and R2 form the damping filter for conducted EMI. 6.1.2 Clamp Diode D5, R4, R3 and C9 are designed to dampen the ringing after switch-off of the integrated MOSFET switch. D5 must be a slow diode for ringing damping. Figure 22 and Figure 23 show damping using fast and a slow diode. aaa-000920 CH1 (Orange): Drain primary switch CH2 (Green): Cathode clamp diode Fig 22. Damping using a slow diode (1N4007) Using a slow diode, the diode conducts after the drain signal reaches its peak and the clamping circuit remains parallel to the primary. This action leads to the fast damping of the ringing. The ringing frequency is 1.1 MHz, damping time is 2 µs. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 28 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger aaa-000922 CH1 (Orange): Drain primary switch CH2 (Green): Cathode clamp diode Fig 23. Damping using a fast diode (BYW26CV) Using a fast diode, the clamping capacitor remains charged after reaching a peak, the clamping circuit is not active and does not provide further damping. The oscillation frequency is 2.2 MHz and the damping time increases to 4 µs. Quick damping of the oscillation is important to ensure proper measurement of the voltage on the FB pin at the end of the secondary stroke. The value of R4 controls the damping and is a compromise of the damping speed and the additional dissipation of the clamp. The values shown are a good starting point for a 5 W application. 6.1.3 Source resistor The source resistor between SOURCE pin and ground comprise three SMD resistors in parallel. Parallel configuration allows the use of standard SMD resistors for accurate tuning. The value of the source resistor is calculated as follows: RSOURCE = VSOURCE(pk)max / Ipk(p)max VSOURCE(pk)max = 0.565 V and Ipk(p)max is the peak current required to deliver full power as in the following calculation: PIN(max) = 0.5 × Lp × Ipk(max)2 × fmax In practice, RSOURCE can be about 5 % larger as the real Ipk continues to increase after switch-off from the MOSFET. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 29 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger (6) Ipri in coil of transformer (1) (2) Isec.ns/np (3) tprop Vgate trise 0A 11 V tcomm t t 0V (4) Vcomm (5) np/ns.Vsec VIN 0V VFB VFB(sec) 0V VFB(pri) Vint Vint(max) 0V t t t aaa-000924 (1) Ipk (VDRAIN = VIN) (2) Ip (VGATE = 0 V (3) Ip (VSOURCE = Vpk) (4) VIN + nVsec + Vcomm (5) VIN + nVsec (6) Isec ns/np in secondary coil of transformer Fig 24. Detail rise of the primary circuit After reaching the internal Vpk level of the control loop, there is an internal delay (tPD = propagation delay) before the gate is turned off. The value shown for VSOURCE(pk)max is taking this propagation delay into account, as it is measured in a practical application. After the gate is turned off, Ip increases until the voltage over the primary coil is zero. Under theses conditions, the voltage on the drain equals VIN. The exact amount of overshoot of Ipk depends on the steepness of the primary current rise. Some tuning of Rsense could be necessary. 6.1.4 Auxiliary winding supply The auxiliary winding of the transformer supplies the IC VCC voltage via D7, R6 and C3. The peak of the ringing (peak rectification) determines the VCC level and not the average level of the secondary stroke. Resistor R6 is used to prevent a too heavy short load of the auxiliary winding under no-load conditions. A short load can disturb the sampling of the voltage at the FB pin. If the output voltage drops below 1 V, resistor R6 can be trimmed to ensure the IC switches off when in current mode. As VCC runs on peak rectification, it is possible the IC continues operating up to an output voltage of 0 V. Remark: Install capacitor C10 as close to the IC as possible to suppress disturbances. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 30 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.1.5 Auxiliary winding: Feedback The auxiliary winding is fed to the FB pin. The resistive divider consists of R7, R8, R13 and R14. To set an accurate division factor, use two resistors in parallel. Capacitor C7 is added for spike suppression. Select a low value for C7 (around 10 pF) to avoid a disruption of the waveform at the FB pin. A low value for C7 provides accurate sampling of the voltage. 6.1.6 Secondary side On the secondary side, Schottky diode D8 is used for rectification. Despite a 1 A rated output current, the peak current can be higher than 4.5 A. Therefore, for efficiency select a diode able to manage a current higher than 4.5 A. Capacitor C4 and R9 suppress the switching spikes of the diode. The output capacitors C5 and C6 manage the load step in burst mode. For output ripple and load step behavior, use capacitors with low Equivalent Series Resistance (ESR). Table 4 summarizes the relationship between the value of the output capacitor, burst frequency and no-load power for a 5 W and 11 W application: Table 4. fburst fburst versus Cout and PIN(no-load) Cout(nom) PIN(no-load) TEA1721 TEA1723 420 Hz 2 × 1000 μF < 10 mW < 17 mW 885 Hz 2 × 470 μF < 16 mW < 26 mW 1260 Hz 680 μF < 22 mW < 35 mW 1750 Hz 2 × 820 μF < 33 mW < 50 mW Resistor R10 is the preload resistor. The preload resistor serves two purposes: • A small load on secondary side ensures proper regulation of the output voltage at no-load condition. • The preload resistor dissipates any excess of energy above the IC supply and the auxiliary divider generated in no-load conditions by the fixed burst frequency. If excess energy is not dissipated, the output voltage rises up to the OVP level. 6.2 Layout considerations Layout is not critical, however for the best result the following items are taken into account: • • • • Separation of large signal and small signal path Copper area at ground pins for cooling Routing input filter Short connection secondary diode to transformer and output capacitor Figure 25 show the layout of the demo board: AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 31 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Fig 25. Demo board layout (5 W) Both components on top side and bottom side are shown for reference. The ground plane is emphasized with a transparent light blue color. For recognition, the internal switch of the IC between pin 7 and 6 is drawn. Figure 21 shows the circuit diagram. 6.2.1 Separation large and small signal path The area above the IC carries the large currents and high voltages and the area below the IC is the small signal area. The negative pole of C2 acts as star ground where all grounds (large signal, small signal, AC input) merge. The loop of the large signal current is kept small. When the internal switch is closed, the current flows from the plus terminal of C2 to the primary winding. Thereafter, the current flows via the internal switch between pins 7, 6 and the source resistor R5, 11,12 back to the minus terminal of C2, star ground. When the internal switch is off, the current of the primary winding flows into the clamp via diode D5, R4, R3 and C11 back to the positive terminal of C2 and (during rise of the drain voltage) via the parasitic capacitance of the internal switch and the source resistor to ground. The small signal ground is positioned below the IC. Here the auxiliary winding is grounded. Via D7, R6, C3, a bridge wire and C8 the auxiliary winding supplies the VCC on pin 5. Via the resistive divider R8, R13 and R7, R14, C7 the signal of the auxiliary winding is fed to FB pin 4. 6.2.2 Cooling the IC IC pins 1 to 3 are connected to a copper plane, and used for cooling the IC. The heat of the internal switch is conducted from the IC via pin 1 and 3. The heat transfer from the IC pins is optimized by using a contiguous copper plane underneath the pins. The holes in the silk screen create the solder islands for the IC pins. The size of the copper plane is 10 mm × 8 mm. This plane provides sufficient cooling of an enclosed 5 W application up to 45 °C. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 32 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.2.3 Input filter The input part is routed such that interference from switching cannot reach the mains connection without passing through the filter L1, L2 and C1. Crosstalk directly to the mains connections is avoided by creating sufficient spacing. 6.2.4 Secondary side On the secondary side, a rectifier diode is placed as close as possible to the winding to improve EMI. In addition, the connection from cathode to output capacitor is as short as possible. R9 and C4 are added to suppress switching spikes. The position of preload resistor R10 is not critical. 6.3 Transformer For proper functioning of the primary sensing concept, attention is needed for the correct transformer construction. The considerations are as follows: • • • • Lp and Ipk in relation to input voltage and power Secondary stroke must be long enough for proper sampling of VOUT Transformer construction of windings Safety The following outlines the basics of transformer selection: 6.3.1 Calculation of Lp and Ipk Figure 26 shows a calculation example for a 5 W application. Only the main items, which determine the transformer are calculated, the primary inductance Lp and the peak current Ipk at maximum output power. At the right-hand side, the explanation of parameters and used formulas are given. Below some additional details of Figure 26 are described. fmains fmains the lowest mains frequency selected for this application is 60 Hz and not 50 Hz. The reason is 50 Hz mains have nominal voltages of 220 V or higher. A drop to 85 V is not realistic at these voltage levels. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 33 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger Selection nVOUT The value of nVOUT (the output voltage multiplied by the ratio of the number of primary windings and number of secondary windings) influences two design parameters: • The peak voltage on the primary switch • The secondary stroke time The formula for the peak voltage on the primary switch when turned off is: Vpk(p) = Velcap(max) + nVOUT + Vpk(ringing) Where: Vpk(p) has to remain below the maximum breakdown voltage of the switch. Velcap(max) is reached for maximum AC input voltage 264 V (AC) and is about 375 V (DC). Vpk(ringing) can run up to about 100 V. By selecting nVOUT not too high, Vpk(p) can be maintained at a safe level. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 34 of 50 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors AN11060 Application note Input value Calculated Fill in the required parameters in the green fields Values, pending on design Vout Iout Vf Cmains Vmains_min Fmains nVout The other values are fixed for this design 5.00 Vdc 1.00 A 0.60 V 9.40E-06 F 85.00 Vac 60.00 Hz 72.00 V Output voltage converter @ max load Maximum output current converter Forward voltage secondary diode Value total elcap behind rectifier Lowest specified mains input voltage for full performance Frequency mains voltage @ minimal input voltage Practical value between 60 and 80 Volt, select highest value for which Tsec_min = 1.9 us Values, fixed by IC design eff Switch frequency at max power Tdead_min_perc 0.75 5.20E+04 Hz 0.05 Tdead_min 9.62E-07 Tdead_min = 1/Fsw * Tdead_min_perc Fsw_max Converter efficiency 1/Fsw = Tprim + Tsec + Tdead_min, Tdead_min to guarantee discontinuous operation Pin Vpeak_elcap Vmin_elcap 6.67 W 118.81 V 74.71 V Pin = Vout * Iout_max / eff Vpeak_elcap = Vmains_min * SQRT(2) - 2 * drop over bridge diodes (0.7V / diode) Vmin_elcap is where the dropping voltage of the elcap meets the rising mains voltage For the elcap voltage we can write for Tm, where Tm is the time after reching the Vpeak_elcap: 0.5 * Cmains * (Vpeak^2 - Velcap^2) = Pin * Tm => Velcap = SQRT((Vpeak^2) - ((Pin * Tm)/(0.5 * Cmains))) For the rising voltage of the mains the formula is: Vmains = Vpeak * sin (2*pi*Fmains*(Tm - 1/(4*Fmains))) Calculation Ipk, Lp Derivation: 1 Pin = Fsw_max * 0.5 * Lp * Ipk^2 2 Pin = Pout/eff. 3 Ipk = Vmin_elcap * Tprim / Lp 4 Ipk = nVout * Tsec / Lp 5 Tprim + Tsec + Tdead_min = 1/Fsw_max Substitute 3 and 4 in 5 (Lp*Ipk)/Vmin_elcap + (Lp*Ipk)/nVout + Tdead_min = 1/Fsw_max Lp*Ipk = (1/Fsw_max - Tdead_min)(1/(1/Vmin_elcap + 1/nVout) = (1/Fsw_max)(1-Tdead_min_perc)(1/(1/Vmin_elcap + 1/nVout) Substitute Lp*Ip in 1 Ipk Tsec_max Tsec_min Ipk = (2 * Pin * (Vmin_elcap + nVout)) / ((Vmin_elcap * nVout) * (1-Tdead_min_perc)) 9.30E-06 1.90E-06 Tsec = Lp * Ipk / (nVout) Lp = (1/Fsw_max - Tdead_min) * 1 / (1/Vmin_elcap + 1/nVout) * 1/Ipk Tsec_min = Tsec_max * (Ipk_min/Ipk_max) = Tsec_max / 4.9 aaa-001523 Fig 26. Lp and Ipk calculations (5 W) AN11060 35 of 50 © NXP B.V. 2012. All rights reserved. Lp 3.83E-01 A 1.75E-03 H TEA172X 5 W to 11 W Power Supply/USB charger Rev. 1.2 — 8 June 2012 All information provided in this document is subject to legal disclaimers. Calculation minimal DC voltage at converter input AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.3.2 Secondary stroke time The sampling timing during the secondary stroke time is related to the output power. The secondary stroke time is also related to the output power, it is important that the sampling timing fits within the secondary stroke time. Figure 27 shows some basic signals and the relationship between secondary stroke time and the transformer. VDC + nVOUT VDC + VDC Ls n : 1 Vs Ip + VOUT Vp Is Lp Ipk(p) Vp lp Ip = (VDC / Lp) * t VOUT t Vs (2) lpks = n * lpk(p) ls Is = n * Ipk(p) - (VOUT * n ^ 2 / Lp) * t t aaa-000930 (1) Ipk(p) = primary peak current. (2) Ipk(s) = secondary peak current. Graphs valid for discontinuous mode when neglecting secondary diode drop Fig 27. Waveforms to calculate secondary stroke time During primary stroke time, the Ipk primary increases linear with the slope of the DC voltage over the primary VDC divided by the inductance Lp. The current on the secondary side (Is) starts with the transformed current to secondary side, Ipk(p) * n. The decay is linear to zero with a slope of the output voltage VOUT divided by the primary inductance, transferred to secondary side Lp / n2. The secondary stroke time ts can be derived from the secondary current Equation 20, as shown in Equation 21. 2 I s = n × I pk ( p ) – ( V OUT ÷ ( L p ÷ ( n ) ) ) × t (20) The secondary stroke time ts is reached when Is = 0: t s = L p × I pk ( p ) ÷ ( n × V OUT ) (21) For correct sampling, the minimum secondary stroke time ts(min) for Ipk = Ipk(min) = 1.9 µs. The ratio between Ipk(min) and Ipk(max) is 4.9. When the calculated ts(min) is too short, the time can be increased by lowering nVOUT in the calculation and recalculate the Lp and Ipk. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 36 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.3.3 Winding construction Figure 28 show a suitable set-up of the winding scheme. S Aux P P Shield Core Core aaa-000931 Fig 28. Transformer winding configuration The first winding called the Shield is a shielding winding that must be one full layer. Connect one side to ground or to the DC voltage side of the main electrolytic capacitor. The primary winding (P) normally needs two or three layers. The auxiliary winding additional serves as shielding between primary and secondary. For primary sensing, the auxiliary winding needs a tight coupling with the secondary. In this position it also has a good coupling with the primary, leading to more ringing on the auxiliary winding. For optimal performance, the auxiliary winding must be on top of the secondary winding. However, some shielding is needed between the primary and secondary for EMI protection. The TEA172X demo board uses the construction discussed thus far with auxiliary winding between the primary and secondary. This type of construction gives the demo board satisfactory performance. The secondary winding (S) must be Triple Isolated (TRISO) wire to meet the safety standards. 6.3.4 Safety requirements As the output power is low, it is possible to use small cores for the transformer, for example, the EE13 and EE16. However, with these transformer sizes, consider the safety requirements for mains isolation. The use of TRISO wire for the secondary winding maintains a small construction size. Typically the pins of the bobbins for EE13 and EE16 cores are not spaced far enough apart to fulfill the safety distance between hot and cold. Therefore, the solution is to use flying leads to connect the secondary windings far enough from the primary pins at the bobbin. Flying leads are however not convenient for production. Some bobbins for EE13 and EE16 are designed with the required safety distance by extending the footprint of the secondary side. This type of construction increases the footprint (larger size), but eases production. 6.4 Differences between 11 W and 5 W applications The following provides a list of differences between the 11 W and 5 W applications. Figure 29 shows the schematic of the 11 W demo board. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 37 of 50 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx 1 T1 9,10 C4 2.2 nF 50 V D8 NXP Semiconductors AN11060 Application note L1 R9 33 Ω 1.5 mH 12, 13 SBR10U45SP5 3 C9 470 pF 500 V R1 J1 L C1 10 μF 400 V C2 10 μF 400 V 10 Ω R4 180 Ω Transformer Wurth 11W D5 1N4007 1000 V 90 V (AC) to 265 V (AC) C6 470 μF 10 V R10 2.2 kΩ C122 2 μF 10 V J3 5V GND1 GND2 GND3 C7 D4 1N4007 1000 V 10 pF 50 V FB 8 1 2 C10 2.2 nF 2 kV D7 PMLL4148L IC1 J2 N D3 1N4007 1000 V C5 470 μF 10 V 6 D2 1N4007 1000 V RF1 10 A 40 V 4 TEA1723BT 3 6 4 5 DRAIN Rsense 0.78 Ω R6 12 Ω SOURCE VCC C8 10 nF 50 V C3 10 μF 50 V RFB1 19.5 kΩ RFB2 aaa-001978 5.45 kΩ AN11060 38 of 50 © NXP B.V. 2012. All rights reserved. Fig 29. Demo board schematic (11 W) TEA172X 5 W to 11 W Power Supply/USB charger Rev. 1.2 — 8 June 2012 All information provided in this document is subject to legal disclaimers. 10 kΩ D1 1N4007 1000 V R3 100 kΩ AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.4.1 Input filter and EMI The configuration for EMI suppression is slightly different. A 2.2 nF Y-cap used over the transformer and the coil in the ground connection of C1 and C2 is replaced by a short-circuit. The EMI suppression is at the limit, to improve the reserve an additional common mode choke before the diode bridge could be added. 6.4.2 Clamp The values of the components are adapted to match the higher power. 6.4.3 Source resistor The value of the resistor is adapted to match the higher current. 6.4.4 Secondary side The value of the output capacitors can remain the same to fulfill the USB 1.1 spec. To reduce the output ripple, a 22 µF ceramic capacitor can be added in parallel to the output capacitors. In addition, the value of the preload resistor is adapted to match the higher no-load power. 6.4.5 Layout considerations The layout setup for the 11 W version is identical to the 5 W version. Only the cooling is increased to cope with the higher power. The dimension of the copper area is 15 × 10 mm for the 11 W version. The dimension of the copper area for the 5 W version is 8 × 10 mm. aaa-001989 Fig 30. Demo board layout (11 W) 6.4.6 Calculation Lp and Ipk Figure 31 shows a calculation example for an 11 W application. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 39 of 50 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors AN11060 Application note Direcons for use Definition: Physical constants mu_r mu_o ro ro_increase_per_degree 1.00 1.26E-06 1.75E-08 4.30E-03 Permeability core 1.00E-04 m 2.00E-05 m Use wire tables, available from manufacturers, e.g. Electrisola Permeability vacuum Copper resistance For a temperature increase of 100 degrees, the copper resistance increases with 43% Values for transformer calculaon Isolation thickness triso Isolation thickness lacquer Use wire tables, available from manufacturers, e.g. Electrisola, use for isolation grade 2 Input value Calculated Fill in the required parameters in the green fields Values, pending on design Vout Iout Vf Cmains Vmains_min The other values are fixed for this design Output voltage converter @ max load Maximum output current converter Forward voltage secondary diode Value total elcap behind rectifier, usual 2 μF per watt output power. Lowest specified mains input voltage for full performance Frequency mains voltage @ minimal input voltage Practical value between 60 and 80 Volt, select highest value for which Tsec_min = 1.9 us Values, fixed by IC design 0.75 5.20E+04 Hz 0.05 Switch frequency at max power Tdead_min_perc eff Tdead_min 9.62E-07 Tdead_min = 1/Fsw * Tdead_min_perc Fsw_max Converter efficiency 1/Fsw = Tprim + Tsec + Tdead_min, Tdead_min to guarantee discontinuous operation Calculation minimal DC voltage at converter input Pin Vpeak_elcap Vmin_elcap 13.33 W 118.81 V 77.63 V Pin = Vout * Iout_max / eff Vpeak_elcap = Vmains_min * SQRT(2) - 2 * drop over bridge diodes (0.7V / diode) Vmin_elcap is where the dropping voltage of the elcap meets the rising mains voltage For the elcap voltage we can write for Tm, where Tm is the time after reching the Vpeak_elcap: 0.5 * Cmains * (Vpeak^2 - Velcap^2) = Pin * Tm => Velcap = SQRT((Vpeak^2) - ((Pin * Tm)/(0.5 * Cmains))) For the rising voltage of the mains the formula is: Vmains = Vpeak * sin (2*pi*Fmains*(Tm - 1/(4*Fmains))) Calculation Ipk, Lp Derivation: 1 Pin = Fsw_max * 0.5 * Lp * Ipk^2 2 Pin = Pout/eff. 3 Ipk = Vmin_elcap * Tprim / Lp 4 Ipk = nVout * Tsec / Lp 5 Tprim + Tsec + Tdead_min = 1/Fsw_max Substitute 3 and 4 in 5 (Lp*Ipk)/Vmin_elcap + (Lp*Ipk)/nVout + Tdead_min = 1/Fsw_max Lp*Ipk = (1/Fsw_max - Tdead_min)(1/(1/Vmin_elcap + 1/nVout) = (1/Fsw_max)(1-Tdead_min_perc)(1/(1/Vmin_elcap + 1/nVout) Lp Tsec_max Tsec_min Fig 31. Lp and Ipk calculations (11 W) 7.51E-01 A 9.08E-04 H 9.48E-06 1.93E-06 Ipk = (2 * Pin * (Vmin_elcap + nVout)) / ((Vmin_elcap * nVout) * (1-Tdead_min_perc)) Lp = (1/Fsw_max - Tdead_min) * 1 / (1/Vmin_elcap + 1/nVout) * 1/Ipk Tsec = Lp * Ipk / (nVout) Tsec_min = Tsec_max * (Ipk_min/Ipk_max) = Tsec_max / 4.9 aaa-002013 AN11060 40 of 50 © NXP B.V. 2012. All rights reserved. Substitute Lp*Ip in 1 Ipk TEA172X 5 W to 11 W Power Supply/USB charger Rev. 1.2 — 8 June 2012 All information provided in this document is subject to legal disclaimers. Fmains nVout 5.00 Vdc 2.00 A 0.60 V 2.00E-05 F 85.00 Vac 60.00 Hz 72.00 V AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 6.5 Short-circuit behavior The TEA172x can handle a short-circuit on the secondary side in a safe way. In Figure 32 the relevant signals are given during a short. (1) IOUT in short-circuit condition. (2) VCC. (3) VDRAIN. (4) VOUT. Fig 32. Signals during a short circuit of VOUT When the output is short circuited, the TEA172x runs in current mode. During a short circuit (VOUT = 0), the VOUT related auxiliary winding voltage Vaux and VCC drop below the VCC(stop) level (8.5 V). The high-voltage current source is enabled and charges the capacitor connected to pin on VCC. When the VCC voltage > 17 V (VCC(startup)), switching is started and the circuit delivers current to the short-circuit. Switching continues until the VCC supply < VCC(stop) trigger level (8.5 V) causing the sequence to repeat. Looking in more detail at the waveforms, the TEA172x triggers demagnetization protection when the output is short circuited (See Figure 33). AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 41 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger (1) IOUT in short-circuit condition. (2) VDRAIN. (3) VOUT. Fig 33. Detailed waveforms while switching during a short circuit After building up energy during primary stroke, the energy is delivered to the secondary diode and the short circuited output. The demagnetization requirement (VFB < 50 mV) is only valid when all energy is delivered to secondary side. Once this occurs, switching is released. The demagnetization protection now determines the switching frequency ensuring the energy delivered during the short-circuit is limited. The primary power, taken during the hiccup mode with VOUT short circuited, is measured for the TEA172x application boards as given in Table 5. Table 5. Input power with VOUT short circuited The TEA1721XT are 5 W versions and the TEA1723XT are 11 W versions. AC VIN RMS (V) TEA1721XT (W) TEA1723XT (W) 90 0.26 0.42 115 0.29 0.45 230 0.39 0.59 265 0.43 0.62 The primary power is low enough for the circuit to survive a short-circuit for an indefinite time AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 42 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 7. Appendix 7.1 USB specification The TEA172X is designed to fulfill the USB specification for chargers. Currently, USB 1.1 is used, however USB 1.2 is advancing. The most important requirements are as follows. 7.1.1 USB 1.1 Figure 34 shows a graph of the static voltage versus current requirement for a USB 1.1 charger. 1 2 3 4 0.5 A 1.5 A 5.25 V 5.0 4.75 V 5 4.0 Dedicated Charging Port shall operate here Dedicated Charging Port shall not operate here Voltage (V) 3.0 2.0 V 2.0 6 1.0 7 0 0 0.5 1.0 1.5 Current (A) aaa-000932 (1) CVB: Burst mode with energy saving: no-load 10 mW to low load of 120 mW. (2) CVC: 120 mW up to 2 W. (3) CVF: 2 W up to 5 W. (4) CP: 5 W with transition from CV to CC. (5) CCF: 5 W down to 2.5 W (6) CCC: Constant voltage with burst mode. 2.5 down to 1 W (7) Start-up and UVLO. No power conversion. Generally, the graph is valid for a quasi-stationary load and is without jitter and without spread. Fig 34. USB 1.1 static behavior and TEA172X operation modes Figure 34 shows the voltage versus current for a 5 W USB charger using the TEA1721. The USB 1.1 specification requires precise voltage regulation (5 V ± 5 % or 4.75 V - 5.25 V) up to 0.5 A. Higher than 0.5 A, the requirement is that the output current remains between 0.5 A and 1.5 A. The output voltage must remain lower than 5.25 V. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 43 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger If VOUT drops below 2 V, the power supply is allowed to shut down, that is, it starts to “Hiccup”. Alternatively, the power supply can continue to deliver current for as long as the output current remains lower than 1.5 A. The characteristic of most chargers is to maintain the output voltage between 4.75 V and 5.25 V until maximum output power is reached. Thereafter, switch to current mode for charging. Current mode has to work at least until an output voltage of 2 V. Lower than 2 V, behavior is not critical unless the output current increases higher than 1.5 A. For the USB 1.1 characteristic the different operating modes of the TEA172X are indicated. Figure 35 shows the dynamic behavior requirements of USB 1.1. IOUT I max A 0.5 A 0.0 A VOUT 6.00 V 5.25 V 4.75 V 4.10 V (1) (2) aaa-000933 (1) Load step 0 A => 0.5 A. Requirements: - VOUT must remain above 4.1 V - VOUT average (over 1 s) must remain between 4.75 V and 5.25 V No time limits for recovery (2) Load step I max A => 0 A. Requirement: - VOUT must remain below 6 V - VOUT average (over 1 s) must remain between 4.75 V and 5.25 V No time limit for recovery Fig 35. USB 1.1 dynamic behavior For any load step between 0 A and 0.5 A, VOUT is not allowed to drop below 4.1 V. This requirement is used to calculate the size of the output capacitors, see Section 5.6. For any load step between IOUT(max) and 0 A, the output voltage must not rise higher than 6 V. The output voltage must remain between 4.75 V and 5.25 V when averaged over 1 second. 7.1.2 USB 1.2 Figure 36 shows the static behavior for USB 1.2, which is less demanding on a number of aspects compared to USB 1.1. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 44 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 5.25 5.0 4.75 all curves allowed 4.0 (1) Voltage (V) (2) 3.0 VBUS turned off 2.0 1.0 0 (3) 0 0.5 1.0 1.5 (4) 2.0 5.0 Current (A) aaa-000934 (1) Charging port operation not allowed (2) Required operating range for Dedicated Charging Port (DCP) (3) Valid load curve must cross either line (4) Continuous current regulation allowed. Current limit trip operation allowed. Generally, the specification for the output voltage remains narrow until an output current of 0.5 A (4.75 V to 5.25 V). No requirement for current limitation or minimal required VOUT (VBUS). Fig 36. USB 1.2 static behavior The USB 1.2 specification is identical to USB 1.1 up to an output current of 0.5 A. At 0.5 A, VOUT must remain between 4.75 V and 5.25 V. Above 0.5 A, there are no requirements except that the output voltage must remain below 5.25 V and the output current must remain below 5 A. At output currents <1.5 A, the device must operate until the output voltage is 2 V. Below an output voltage of 2 V or an output current > 1.5 A, the device can shut down, “Hiccup” or deliver any current < 5 A. In practice, most customers do not allow currents in this mode above the nominal charge current to avoid excessive dissipation. A major relaxation of USB 1.2 related to dynamic behavior are load steps. Load steps have been divided into two ranges and three current levels. See Table 6 Table 6. Load steps IDCP Min Max Unit Low 0 0.03 A Mid 0.03 0.1 A High 0.5 - A Load steps are divided into the three Dedicated Charging Port (DCP) current ranges: • IDCP Low => IDCP Mid • IDCP Mid => IDCP High • IDCP Low => IDCP High AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 45 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger The additional IDCP Mid level allows for relaxation of the undershoot requirements for primary sensed chargers with low standby power, provided the USB device is designed for USB 1.2. The requirements for undershoot during current steps from Low to Mid and Mid to High are as shown in Figure 37: IOUT 0.5 A 0.1 A 0.0 A VOUT 6.00 V < 10 ms < 10 ms 5.25 V 4.75 V 4.10 V > 20 ms aaa-000935 Fig 37. USB dynamic undershoot 1 For load steps between: • IDCP Low => IDCP Mid (0 A => 0.03 A to 0.10 A) and IDCP Mid => IDCP High (0.03 A to 0.10 A => 0.5 A) the following applies: • VOUT must remain above 4.1 V • Duration undershoot VOUT < 4.75 V must be < 10 ms • Minimum time between load step 0 A => 0.03 A to 0.10 A and 0.03 A to 0.10 A => 0.5 A is 20 ms. The requirements for undershoot during a current step from Low to High are as shown in Figure 38 AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 46 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger IOUT 0.5 A 0.0 A VOUT < 10 ms 6.00 V 5.25 V 4.75 V 4.10 V (1) aaa-000936 (1) Load voltage attached PD (USB PD) Fig 38. USB dynamic undershoot 2 For any load step between: • IDCP Low => High (0 A to 0.03 A => 0.5 A) the following applies: • VOUT can drop to the battery voltage of the attached Portable Device (PD) • Undershoot (VOUT < 4.75 V) must be < 10 ms The requirement for load steps from high to low is the same as for USB 1.1. See Figure 39 IOUT 1A 0A VOUT 6.00 V 5.25 V 4.75 V 4.10 V (1) aaa-000937 (1) Load step 1 A => 0 A (or any other load step down). Requirement, VOUT must not exceed 6 V. Fig 39. USB 1.2 dynamic overshoot In general, the output voltage must not rise above 6 V for any load step, during switch-on or during switch-off. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 47 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 8. Abbreviations Table 7. Abbreviations Acronym Description CC Constant Current CCC Constant Current with Current mode CCF Constant Current with Frequency mode CP Constant Power CVB Constant Current with Burst mode CVC Constant Voltage with Current mode CVF Constant Voltage with Frequency mode CV Constant Voltage DCP Dedicated Charging Port EMI ElectroMagnetic Interference ESR Equivalent Series Resistance HVAC Heating, Ventilating and Air Conditioning MOSFET Metal-Oxide Semiconductor Field-Effect Transistor OVP OverVoltage Protection PD Portable Device UVLO UnderVoltage Lockout UVP UnderVoltage Protection 9. References AN11060 Application note [1] TEA1721AT\BT\DT\FT — data sheets: Ultra-low standby SMPS controller with integrated power switch [2] TEA1723AT\BT\DT\FT — data sheets: Ultra-low standby SMPS controller with integrated power switch data sheet [3] UM10520 — TEA1721 Isolated 3-phase universal mains flyback converter demo board user manual [4] UM10521 — TEA1721 isolated universal mains flyback converter demo board user manual [5] UM10522 — TEA1721 non-isolated universal mains buck and buck/boost converter demo board user manual [6] UM10523 — TEA1721 universal mains white goods flyback SMPS demo board user manual All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 48 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 10. Legal information 10.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 10.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 10.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. GreenChip — is a trademark of NXP B.V. AN11060 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.2 — 8 June 2012 © NXP B.V. 2012. All rights reserved. 49 of 50 AN11060 NXP Semiconductors TEA172X 5 W to 11 W Power Supply/USB charger 11. Contents 1 2 3 3.1 3.1.1 3.2 4 5 5.1 5.2 5.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 5.13.1 5.13.2 5.13.3 5.13.4 5.13.5 5.13.6 6 6.1 6.1.1 6.1.2 6.1.3 6.1.4 6.1.5 6.1.6 6.2 6.2.1 6.2.2 6.2.3 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Scope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 TEA172X low-power adapter. . . . . . . . . . . . . . . 3 Key features . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Basic application schematic . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . 5 System description . . . . . . . . . . . . . . . . . . . . . . 6 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Operating modes . . . . . . . . . . . . . . . . . . . . . . . 8 Burst mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 CVC mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 CVF mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 CCF mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 CCC mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Overview control modes . . . . . . . . . . . . . . . . . 15 Relationship between no-load and max load . 15 Total input power at no-load . . . . . . . . . . . . . . 17 Relationship between fburst and output capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Demagnetization protection . . . . . . . . . . . . . . 22 Supply from the auxiliary winding . . . . . . . . . . 22 Soft start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Load line compensation . . . . . . . . . . . . . . . . . 24 Jitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Protective features . . . . . . . . . . . . . . . . . . . . . 24 UnderVoltage Protection (UVP) on the VCC pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 OverVoltage Protection (OVP) on VOUT . . . . . 25 OverTemperature Protection (OTP) . . . . . . . . 25 Demagnetization protection . . . . . . . . . . . . . . 25 FB pin open and short-circuit protection . . . . . 26 Protection features overview table . . . . . . . . . 26 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Application diagram . . . . . . . . . . . . . . . . . . . . 26 Input and EMI filter . . . . . . . . . . . . . . . . . . . . . 28 Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Source resistor . . . . . . . . . . . . . . . . . . . . . . . . 29 Auxiliary winding supply . . . . . . . . . . . . . . . . . 30 Auxiliary winding: Feedback . . . . . . . . . . . . . . 31 Secondary side . . . . . . . . . . . . . . . . . . . . . . . . 31 Layout considerations. . . . . . . . . . . . . . . . . . . 31 Separation large and small signal path. . . . . . 32 Cooling the IC . . . . . . . . . . . . . . . . . . . . . . . . . 32 Input filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6.2.4 6.3 6.3.1 6.3.2 6.3.3 6.3.4 6.4 6.4.1 6.4.2 6.4.3 6.4.4 6.4.5 6.4.6 6.5 7 7.1 7.1.1 7.1.2 8 9 10 10.1 10.2 10.3 11 Secondary side . . . . . . . . . . . . . . . . . . . . . . . Transformer . . . . . . . . . . . . . . . . . . . . . . . . . . Calculation of Lp and Ipk . . . . . . . . . . . . . . . . . Secondary stroke time . . . . . . . . . . . . . . . . . . Winding construction . . . . . . . . . . . . . . . . . . . Safety requirements . . . . . . . . . . . . . . . . . . . . Differences between 11 W and 5 W applications . . . . . . . . . . . . . . . . . . . . . . . . . . Input filter and EMI. . . . . . . . . . . . . . . . . . . . . Clamp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source resistor. . . . . . . . . . . . . . . . . . . . . . . . Secondary side . . . . . . . . . . . . . . . . . . . . . . . Layout considerations . . . . . . . . . . . . . . . . . . Calculation Lp and Ipk . . . . . . . . . . . . . . . . . . . Short-circuit behavior . . . . . . . . . . . . . . . . . . . Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . USB specification. . . . . . . . . . . . . . . . . . . . . . USB 1.1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . USB 1.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . References. . . . . . . . . . . . . . . . . . . . . . . . . . . . Legal information . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 33 33 36 37 37 37 39 39 39 39 39 39 41 43 43 43 44 48 48 49 49 49 49 50 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 June 2012 Document identifier: AN11060