APPLICATION NOTE User Guide for Atmel ATA6870 and Atmel ATmega32HVB Evaluation Kit Hardware DK11 ATA6870-DK11 Features ● Evaluation of the Atmel® ATA6870 ● Monitoring 12 battery cells ● Monitoring: ● Overvoltage (every cell) ● Undervoltage (every cell) ● Overheating ● Overcurrent ● Open clamp detection ● 12-bit battery cell measurement ● 12-bit temperature measurement ● Controlling FET charge/discharge ● Status LEDs for easy evaluation ● Charge active balancing Figure 1. Atmel ATA6870-DK11 9302C-AUTO-04/15 1. Introduction The Atmel® ATA6870-DK11 is a demonstration board for the Atmel ATA6870 and offers an easy way to start evaluation of battery applications in combination with the Atmel ATmega32HVB. The included software demonstrates implementation of a 12-cell battery management system, including the function of active balancing through inductors. The supplied code serves as an example of how to use the Atmel ATMega32HVB and Atmel ATA6870 together. 2. Safety Precautions When Using Li-Ion Batteries Please observe the safety guidelines supplied with the batteries. If improperly used or defective, Li-ion and polymer batteries and packs may explode and cause a fire. 3. Demonstration Board The Atmel ATA6870-DK11 is designed to enable easy evaluation of the control software for an MCU controlling multiple Atmel ATA6870 devices. The supplied sample code demonstrates a simple permanent running measurement of voltages and temperatures. Figure 3-1. Board Concept Cell 12 Cell 11 ATA6870 ATA6870 Cell 02 Cell 01 Charge/ Discharge Control Unit Monitoring (V,T) Coulomb counting ATmega32HVB A very important characteristic of the ATA6870-DK11 is the ability to realize active balancing. Compared with the passive method, the active method is significantly more efficient with virtually lossless energy transfer between battery cells. There are usually two types of active balancing—with capacitors and with inductors. The capacitors are used for balancing currents lower than 50mA, while the inductors are for currents up to 1A or even more. On the ATA6870-DK11 the inductors with the value of 470uH are applied. Table 3-1 describes the achievable peak and average balancing currents with different inductors. 2 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 Table 3-1. Balancing Currents Possible Using Different Inductors f (kHz) Inductor Type Inductance (µH) Resistor of Inductor (m) Peak Balancing Current (mA) Average Balancing Current (mA) 3 Toroidal 300 130 1240 470 3 Toroidal 470 135 790 280 3 SMD 220 380 2280 890 3 SMD 330 430 1620 610 3 SMD 470 560 1500 430 The structure is shown in Figure 3-2. It is easy to see that on the demo board the active balancing can only happen between the two neighboring cells and the balancing current flows from the higher cell to the lower cell, with the corresponding Mosfet switched on. However, if it is the lowest cell of a battery stack that needs to be discharged, a transformer concept applies and the energy is transferred from the lowest cell to the top cell in the battery stack. For more information about the active balancing, please see application note “Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870.” Figure 3-2. Inductive Charge Balancing between Two Stacked ATA6870s M12 Cell 12 PMOS L12 D11 M11 Cell 11 PMOS L11 D10 Cell 10 L8 D7 M7 Cell 7 PMOS L7 Balance Circuit of upper ATA6870 Balance Circuit of lower ATA6870 M6 D6 Cell 6 PMOS L6 D5 M5 Cell 5 PMOS L5 Cell 4 D4 D12 L1 D1 T1 Cell 1 M1 GND ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 3 3.1 System Start Follow these steps to launch the system. 3.1.1 Installing the Hardware ● Connect the load/charger to J1. ● ● Connect the 12-cell stack to the J2 and J3 screw connectors. ● ● 3.1.2 For demonstration purposes it is possible to use a resistor to simulate a load. LED 1 indicates the enabled status of ATA6870-DK11 (controlled by the MCU software, see Table 4-1) In case of emulating cells such as a voltage divider, please apply sufficient voltage. Number of Cells It is possible to run the board with a reduced number of cells. The minimum voltage for each IC is 6.9V. Cell 1 and cell 6 have to be connected. The missing cells should be short-circuited to the upper cell potential of the module. For further information, see Section 7.3 “Reduced Number of Battery Cells Configuration” of the Atmel ATA6870 datasheet. For the voltage range, see Section 3.3 “Powering the Board” on page 6. If fewer than 6 cells are used per IC, the config.h file should be adjusted (CELLSIC# under General Setting). See Section 4.1 “Supplied Code” on page 7 for further information on how to configure the supplied software correctly. 3.2 The Demonstration Board Figure 3-3. Evaluation Board with Two Stacked Atmel ATA6870 and Atmel ATMega32HVB 4 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 3.2.1 On-Board Features The demonstration board includes the following items: ● TwoAtmel® ATA6870 QFN 7mm 7mm ● ● ● Atmel ATMega32HVB 12 external P-channel MOSFETs, 11 inductors, 13 diodes and one transformer for active balancing Connectors ● ISP connector for programming/debugging the Atmel ATMega32HVB ● Screw connectors for connecting up to 12 battery cells Table 3-2. Table 3-3. Connector Overview Connector Function J1 Connector for charger/device to be powered J2 Bottom battery stack (cells 1-6) J3 Upper battery stack (cells 7-12) J10 ISP connector Jumper Overview Jumper Function J9 Jumper to enable/disable MISO line of Atmel ATA6870 (see details below) J13, J14, J15, J17 Current measurement for active balancing (should be closed for charge transfer) J9 should never be set while the Atmel ATmega32HVB is being programmed or while it is entering debug mode. It can be mounted as soon as AVR Studio® prompts for additional SPI lines to be connected in debug mode or after the device has been correctly programmed. Table 3-4. Test Point Overview Test Point Function J19 IC2 work status J21 MCU power and SPI status ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 5 Figure 3-4. Connectors, Jumpers, and Test Points 3.3 Powering the Board 3.3.1 Power Supply The board supports supply voltages ranging from 13.8V (minimum 6.9V per Atmel ATA6870) to 60V. However, to run the board on voltages below 24V the ZDiode D14 needs to be replaced with a jumper to supply the Atmel® ATmega32HVB with sufficient voltage. If the jumper is mounted, be sure that stack voltage does not exceed 48V. The Atmel ATmega32HVB supports operating voltage from4V to 24V. 3.3.2 Emulating Cells Battery cells can be emulated by connecting a voltage divider to the specified clamps. Section 3.1.1 “Installing the Hardware” on page 4 describes how to connect cells. The voltage limits for this setup are the same as for the real batteries. Section 3.3.1 “Power Supply” on page 6 specifies these limits. 6 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 4. Software Description: Monitoring Up to 12 Battery Cells The supplied code is documented and easy to adjust for verifying the basic functions of the Atmel® ATA6870 and start BMS application development. After the board is ready as described above, the microcontroller automatically starts a cyclic measurement of voltages, temperature and current. The status is indicated by the three LEDs on the board and the functions of the LEDs are programmable according to different requirements. LED1 is switched on at the beginning of the main routine and toggles with the active balancing. LED2 indicates that for some reason the charger/load MOSFETS have been disabled. The default software disables the FETs in case of these events: ● Overvoltage (at least one cell exceeds the upper default threshold of 4.2V) ● ● ● ● Undervoltage (at least one cell exceeds the lower default threshold of 2.5V) Overcurrent (the current through the shunt exceeds the default threshold of 80mA) Overheating (the temperature exceeds the upper threshold, default value is 80°C) Low temperature threshold (the default threshold is –20°C) LED3 indicates whether the Atmel ATA6870 devices are turned on or not. An active LED indicates that the Atmel ATA6870 devices are enabled. Table 4-1. LED LED1 LED Functions Function ON indicates access in the main routine TOGGLE indicates that the active balancing is operating LED2 ON indicates disabled MOSFETs for one of the reasons listed above LED3 ON indicates active Atmel ATA6870 The ATA6870 system clock should be provided externally. The Atmel ATmega32HVB has no clock divider to provide an external clock slower than 1/2 CPU clock. The requirement for the Atmel ATA6870 is fCLK > 2 × fSPI. As a result, the clock frequency of 1MHz is mandatory to provide a 500kHz clock for the ADCs of the Atmel ATA6870 and 250kHz for SPI. 4.1 Supplied Code 4.1.1 Config.h This section refers to the config.h file provided in the demonstration source code. Only values in the user setting paragraph should be changed and other values should not be changed in the default hardware setup. For example, the variable CELLSIC should be set to match the status of the batteries actually connected. ------------- GENERAL SETTING-------------------------------CELLSIC# Selecting which cells are used Bits 0-5 -> Cells 1-6 ------------- TEMPERATURE SETTING---------------------------RES_REF# Value of the mounted reference resistor (default: 3300) T_TLS Temperature belonging to the first value in the lookup table (index 0, default: -20) T_TLE Temperature belonging to the last value in the lookup table (default: 80) T_TLSZ Temperature step size used in the lookup table (default: 1) T_LOWERTHRESHOLD Lower temperature threshold T_UPPERTHRESHOLD Upper temperature threshold ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 7 ------------- COULOMBCOUNTER SETTING------------------------SHUNT_RESISTANCE Value of the shunt resistor in mOhm RCC_CONVERSIONPERIOD The cycle times for the Regular Current Check 0x00 - 256ms (default) 0x01 - 512ms 0x02 - 1s 0x11 - 2s RCC_DIVIDEDSZ 0x01 to enable divided Voltage (Current) stepsize RCC_CHARGETHRESHOLD Threshold for charging current, exceeding the threshold will turn off the Mosfets RCC_DISCHARGETHRESHOLD Threshold for discharging current, exceeding the threshold will turn off the Mosfets. Balancingthreshold Threshold for the active balancing. 4.2 Voltage Measurements The standard software loop measures the voltage ADC value and the offset ADC value for every cell and checks for overvoltage and undervoltage once per cycle. Further information about acquiring voltages can be found in Section 7.5.1 of the Atmel® ATA6870 datasheet. The formula for calculating the voltage is: V acq – V offset Voltage (Cell) = 4V --------------------------------- 3031 – V offset 4.3 Temperature Measurements The default software only measures channel 1 of chip 1. The temperature sensors are based on a resistor divider using a standard resistor and an NTC resistor. This resistor divider is connected to the reference of the ADC for temperature measuring. Because the ADC shares the same reference value, the output of temperature measurement with ADC is ratiometric. Further information can be found in Section 7.5.3 “Temperature Channel” of the Atmel ATA6870 datasheet. For this application Atmel recommends using Res_Ref1 = 3.3k and RES_NTC1 R25 = 4.7k, B = 3500. The software supplied for this board uses these values as default. The function uses a lookup table to determine the temperature. This table has to be edited if an NTC other than the recommended one is used. The values in the lookup table range from –20°C (index 0) to +80°C (index 100). These values can be edited via the config.h file in the user settings section. More Information about this file can be found in Section 4.1 “Supplied Code” on page 7. The calculation of RES_NTC is carried out based on the formula provided in Section 7.5.3 of the Atmel ATA6870 datasheet: RES_NTC(1) 8 8 adc (out) = 2048 1 + ---------------------------------------------------------------------------- ------ – ------ RES_NTC(1) + RES_REF(1) 15 10 When using another NTC, the LookupADC.txt has to be edited to match the NTC used. 4.4 Gas Gauging Gas gauging is a commonly used method for estimating how much capacity and runtime are left in the battery. By combining its very accurate VADC and CCAVC the Atmel ATmega32HVB can achieve high accuracy gas gauging. Here the voltagebased gas gauge is for the remaining capacity initialization, while the coulomb-counter-based voltage is to keep track of how much current is being used to charge and discharge the battery. Because the gas gauging calculation needs characterization data for the specific battery cell, the algorithm does not fall within the scope of this application note. See the other AVR® application notes for further details. 8 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 4.5 Overcurrent Protection The current through the shunt is calculated by measured voltage drop. The limit can be set via the CADRDC/CADRCC register. The step size depends on the settings of the CADCSRC register and the shunt used. For further information about the limiting current see Section 19.4 “Regular Current Detection Operation” of the Atmel ATmega32HVB datasheet. The supplied software allows the feature to be tested by adjusting the values in the config.h file. More Information about this file can be found in Section 4.1 “Supplied Code” on page 7. Values/part of the code should only be changed if you are aware of possible consequences. The default implementation continuously measures the current and generates an interrupt if the entered thresholds are exceeded. The thresholds are defined in the config.h file. The thresholds are written to the registers in the CCinit function in the Atmel ATA6870_func.c file. Refer to the features of the Atmel ATmega32HVB in the coulomb counter section to learn more about the time the controller waits for the values to be written. Table 4-2. C Code Example C Code Example CADRCC = RCC_CADRCC; while(CADCSRA & (1 << CADUB)); CADRDC = RDC_CADRDC; while(CADCSRA & (1 << CADUB)); 4.6 // Charge Threshold // Wait values to be written // Discharge Threshold // Wait values to be written Active Balancing To realize the function of actively balancing the PMOS only needs to be switched on and off to charge and discharge the inductors (see Figure 4-1). The PWM signal would be an ideal switching signal on the DISCH pins to control the PMOS. In ATA6870 there are no PWM-generating modules implemented. Therefore, to simulate the function of the PWM signal in the demonstration software the continuous on and off commands can be delivered via the SPI communication from the ATmega32HVB to the ATA6870 devices. Figure 4-1. Charging and Discharging Inductors Ln+1 MBATn+1 1kΩ Dn RPUP Cell n Ccoup 100nF DISCHn DISCHn = Low PMOS Ln RPD MBATn 1kΩ Cell n-1 DISCHn = High Dn-1 100nF DISCHn-1 MBATn-1 1kΩ 4.6.1 Single Balancing Mode In the demo software two routines of the active balancing are implemented. ActiveBalance_SingleCell() is used to monitor current with a current probe by replacing jumpers J15, J17 and J13, J14 with a short cable. Under no condition is active balancing triggered in this routine and 5 PWMs are performed. The following code example is part of the ActiveBalance_SingleCell() routine, which performs a balancing operation between cell 5 and cell 4 on the IC2. ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 9 Table 4-3. C Code Example C Code Example Discharge(0xEE); Discharge(0xFE); //Switch the PMOS between the cell4 and cell5 of IC2 on //Switch the PMOS between the cell4 and cell5 of IC2 off Discharge(0xEE); Discharge(0xFE); Discharge(0xEE); Discharge(0xFE); Discharge(0xEE); Discharge(0xFE); Discharge(0xEE); Discharge(0xFE); The code above generates the PWM signal by delivering “high” and “low” to the DISCH3 pin via SPI, enabling active balancing between cell 4 and cell 5 of the IC2. In Figure 4-2 the balancing current and the related switching signal are shown. The peak value of the balancing current is around 1.3A and the switching frequency is around 3.0kHz, which is almost the maximum reachable frequency when the SPI runs at around 250kHz. Figure 4-2. Active Balancing Diagram There is one final consideration: What happens when the PMOS is switched on and cannot be turned off in time, for example, an interrupt happens while the PMOS is on. Does this mean a short circuit occurs between the cathode and anode of the battery cell? This is prevented from happening by the hardware design of the ATA6870-DK11, which automatically turns off the PMOS through capacitive coupling after a period of time elapses as defined by R/C. Figure 4-3 shows this effect. A delay function is inserted after the first switching on signal. After the current reaches the peak current of around 5A, it is possible to see that the PMOS is switched off on its own and the following active balancing can still run normally. 10 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 Figure 4-3. PMOS is Switched Off Automatically 4.6.2 Automatic Mode In the other ActiveBalance() routine active balancing happens between two cells according to the voltage difference. If the voltage of the higher cell is greater than the lower cell by “Balancing threshold,” as defined in config.h, the balancing PWMs are performed to balance the difference until the differences between all the cells are beneath the threshold. As shown in Figure 3-2 on page 3, balancing between the lowest cell and the highest cell is carried out through a transformer, which should work according to your application (current, frequency and other related characteristics should be considered). ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 11 5. Features of the Atmel ATmega32HVB Because the Atmel® ATmega32HVB is a part of the Atmel AVR® family of products dedicated to battery management, there are several special features included such as coulomb counting and the control of the two charge/discharge MOSFETs. 5.1 Coulomb Counter The coulomb counter ADC runs on a different clock than the CPU. This clock is slower and therefore several things have to be kept in mind before using it. Writing several registers in sequence takes a long time depending on the delays between each write cycle. The update busy (CADUB) bit in CADSRA is cleared and written by hardware. A possible solution is given in the supplied software example: Table 5-1. C Code Example C Code Example void CCinit(){ CADRCC = RCC_CADRCC; // Charge Threshold while(CADCSRA & (1 << CADUB)); CADRDC = RDC_CADRDC; // Discharge Threshold while(CADCSRA & (1 << CADUB)); SETBIT(CADCSRB,1<<CADRCIE); // Interrupt Enable while(CADCSRA & (1 << CADUB)); SETBIT(CADCSRC,RCC_DIVIDEDSZ<<CADVSE); // Voltage Scaling while(CADCSRA & (1 << CADUB)); SETBIT(CADCSRA,((1<<CADEN)|(1<<CADSE)|(RCC_CONVERSIONPERIOD<<1))); // ADC Enable, RCC Mode, Sampling Interval while(CADCSRA & (1 << CADUB));} 5.2 Charging/Discharging FETs The two FETs are controlled by an N-channel FET driver. The pins (OC and OD) are designed for outputting a high voltage of approx. 13V. The status of the pins is controlled by software via the FCSR-FET control and the status registers. Table 5-2. C Code Example C Code Example void Configure_Fet(unsigned char Fet){ if(Fet&0x01) SETBIT(FCSR, (1<<DFE)); else CLEARBIT(FCSR,(1<<DFE)); if(Fet&0x02) SETBIT(FCSR,(1<<CFE)); else CLEARBIT(FCSR,(1<<CFE));} The example above implements an easy method to enable or disable the two FETs independently of each other. For more information, see page 148 of the Atmel ATmega32HVB datasheet. In cases where the battery string voltage exceeds the maximum voltage of the ATmega32HVB, two GPIOs can be used to switch on the NMOS as well; for example, PB0 and PA3 are responsible for controlling the charging and discharging MOSFETs in the demo software. 6. Power Consumption There are several ways to reduce the power consumption of the Atmel ATA6870 and the Atmel ATmega32HVB. Sleep modes are documented in Section 7.1.1 of the Atmel ATA6870 datasheet and in Section 10 of the Atmel ATmega32HVB datasheet. This board allows the Atmel ATA6870 to be enabled/disabled using the Atmel ATmega32HVB software. The PB2 pin is used to control a transistor for activating/deactivating the Atmel ATA6870. Other options which are not implemented are the use of interrupts and a timer (sleep between cycles). 12 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 7. Efficiency Figure 8-1 shows the schematic of the active balancing circuit. The tests are based on the WE749196511 transformer. The maximum PWM switching frequency of the system is 3kHz. As a result, the transformer selected needs to be large enough to store the energy. In the following figures the individual inductor and transformer efficiency are calculated. Figure 7-1. Inductor Efficiency Inductor efficiency = 460µWs/720µWs = 64% Figure 7-2. Transformer Efficiency Transformer efficiency = 600µWs/1500µWs = 40% The efficiency of the inductor to the next cell is around 64% and the efficiency of the transformer from the lowest cell to the highest one is 40%. Based on these values the efficiency simulation is carried out under the following conditions: ● The number of runs is 100,000 ● ● ● ● Min/max is ±10% cell voltage difference Distribution across three The assumed average balance current is 1A 12 cells ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 13 Figure 7-3. Simulation Result with Active Balancing Figure 7-4. Simulation Result with Passive Balancing Every result consists of four diagrams: 1. Efficiency of the whole stack 2. Overall loss due to the balancing 3. Time until the balancing is finished 4. Final energy in each cell The simulation result indicates that with passive balancing the overall loss is around 5.29% and with active balancing the overall loss is 2.11%. It can therefore be concluded that active balancing of ATA6870-DK11 reduces the balancing losses to 40% instead of 100% of passive balancing. 14 ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 Schematic 8. Figure 8-1. Schematic of ATA6870-DK11 R93 4K7 GND R90 150R 100nF C29 R43 1K J7 Header 3 GND_2 GND_2 C23 VDDHVP PD_N MISO_IN MOSI_OUT CK_OUT CS_N_OUT CLK_OUT IRQ_IN VDDHV MBAT7 DISCH6 MBAT6 C22 220nF nc(33uF/50V) 37 38 39 40 41 42 43 44 45 46 47 48 100nF C28 R42 1K R64 R37 121K 100nF C27 R41 1K R63 R36 NTC R33 R34 NTC 3K3 R35 3K3 GND_2 D21 1N4148 R31 100K C14 R25 1K 100nF 10R/0.25W R69 GND_2 GND_2 10nF R39 1K R70 0R R68 C21 C32 100nF 10K R62 24 23 22 21 20 19 18 17 16 15 14 13 IC1 ATA6870 24 GND_2 R32 100K GND GND DVDD DVSS VDDFUSE CS_FUSE SCANMODE DTST MFIRST MISO MOSI SCK CS_N 100nF C26 R40 1K R46 100K D20 1N4148 J5 R17 121K Header 3 GND_1 GND_1 220nF nc(33uF/50V) C7 C8 VDD_HVM VDDHVP PD_N MISO_IN MOSI_OUT CK_OUT CS_N_OUT CLK_OUT IRQ_IN VDDHV MBAT7 DISCH6 MBAT6 100nF C13 R24 1K D22 1N4148 R23 1K C12 100nF R59 10K C18 100nF D23 1N4148 C19 10K R30 R29 100K100nF 100K R60 10uF/30V C39 C38 100nF/30V 37 VDDHVP PD_N 38 39 40 41 42 43 44 45 46 47 48 R61 10K C20 100nF NTC R13 R14 VDD_HVM PD_N VDDHVP R16 NTC 3K3 R15 3K3 J19 1 2 3 C16 100nF 10K R57 C9 100nF R26 100K R56 10K C15 100nF D2 Schottky SS14 D26 1N4148 R20 1K GND_1 GND_1 GND_1 Header 3 GND_1 10nF D25 1N4148 R27 100K R21 1K C10 100nF C6 IC2 ATA6870 24 GND_1 R12 100K GND 24 23 22 21 20 19 18 17 16 15 14 13 C17 100nF 10K R58 C11 100nF GND DVDD DVSS VDDFUSE CS_FUSE SCANMODE DTST MFIRST MISO MOSI SCK CS_N R22 1K R28 100K D24 1N4148 M11 PMOS SI2323 J2F J2G R19 1K J9 MISO MOSI SCK CS_N PC0 VCC VREF VBATT GND_1 RESET GND VCC VCC LED1 VCC T1 Transformer WE749196511 J13 D13 R73 5K1 R74 J21 1 2 3 4 5 6 7 8 9 10 11 12 Header 12 LED2 LED3 R10 R8 1K 1K R9 1K GND 5K1 1 2 J14 + GND VFET GND C2 100nF C41 GND 2.2uF/25V R7 1K C40 100nF/50V GND VCC 100nF C50 Rsense R6 D1 LL4148 R11 10K PV2 Q8 NPN FMMT620 R66 R65 10K C33 100nF D4 Schottky SS14 D3 Schottky SS14 M12 PMOS SI2323 J2E GND PV1 41 40 39 38 R92 51K 100nF C30 R44 1K 10K C36 10K C35 100nF R47 100K D19 1N4148 D6 Schottky SS14 J17 M9 PMOS SI2323 1 2 D5 Schottky SS14 M10 PMOS SI2323 Schottky SS14 J2D Q7 BTS6163 3 J2C +Vbb PB2 3 100nF C31 R67 R49 100K 10K C34 100nF M7 PMOS SI2323 M8 PMOS SI2323 0R R72 IS Q6 NPN MMBT2222A 4 Discharge R91 7K5 2 Q9 PMOS SQ2301ES 100nF/30V C24 C25 R45 1K 10K C37 100nF R48 100K D18 1N4148 D8 Schottky SS14 J2B 4K7 R77 D Zener BZV55C6V8-TP J2A D14 D7 Schottky SS14 3 Charge J11 330R R78 J1D R1 1K RESET C5 nc GND ATMEGA32HVB MCU RESET 19 RESET/DW NC NC 17 27 R51 100K D17 1N4148 M5 PMOS SI2323 1K R71 GND C59 GND 2.2uF J1C 100R PV1 PV2 PV3 PV4 PC1 1K R2 100nF R50 100K D10 Schottky SS14 J15 GND PV2 GND J1B 1K R4 R3 PVT 37 MISO PC0 PI PPI NI NNI NV OC OD 44 43 1 2 42 18 16 GND GND GND VREFGND C1 5 15 35 3 100nF PC0(INT0/EXTPROT) PC1(INT1) PC2(INT2) PC3(INT3/SDA) PC4(SCL) PC5 29 30 31 32 33 34 VBATT 1 2 J1A 100R R5 Charge PB2 20 21 22 23 24 25 26 28 PB0(PCINT4/ICP00) PB1(PCINT5/CKOUT) PB2(PCINT6) PB3(PCINT7) PB4(SS/PCINT8) PB5(SCK/PCINT9) PB6(MOSI/PCINT10) PB7(MISO/PCINT7) 7 8 9 10 PA0(ADC0/SGND/PCINT0) PA1(ADC1/SGND/PCINT1) PA2(PCINT2/T0) PA3(PCINT3/T1) VCC VCC VREG VREF VFET VBATT VCLMP10 VREF 14 36 6 4 12 13 11 100nF C4 10R/0.25W R18 D16 1N4148 M3 PMOS SI2323 1 2 D9 Schottky SS14 J3G M6 PMOS SI2323 J3F Q3 PV1 NSS60601MZ4 1 J3E C60 2.2uF Discharge GND J6 2.2uF/100V C3 D15 1N4148 D12 Schottky SS14 D11 Schottky SS14 M4 PMOS SI2323 R75 4K7 GND L1 470 uH Inductor WE7447709471 MISO MOSI SCK CS_N 12 11 10 9 8 7 1 2 3 4 5 6 2 1 M1 PMOS SI2323 M2 PMOS SI2323 J3D 330R R76 J12 Q4 NPN MMBT2222A Q5 BTS6163 4 7 4 J3C IS 2 L2 470 uH Inductor WE7447709471 5 7 6 L3 470 uH Inductor WE7447709471 10uF/30V R52 10R/0.25W J3A +Vbb J8 1 3 3 4 6 2 4 2 + L5 470 uH Inductor WE7447709471 1 2 3 5 1 2 10R/0.25W 36 35 34 33 32 31 30 29 28 27 26 25 L4 470 uH Inductor WE7447709471 3 4 2 VDDHVM PD_N_OUT POW_ENA PWTST BIASRES TEMPREF TEMP2 TEMP1 TEMPVSS AVSS AVDD ATST IN 7 DISCH5 MBAT5 DISCH4 MBAT4 DISCH3 MBAT3 DISCH2 MBAT2 DISCH1 MBAT1 IRQ CLK OUT L7 470 uH Inductor WE7447709471 1 2 3 4 5 6 7 8 9 10 11 12 1&5 L6 470 uH Inductor WE7447709471 2 6 7 1 1 2 1 2 1 2 3 36 35 34 33 32 31 30 29 28 27 26 25 VDDHVM PD_N_OUT POW_ENA PWTST BIASRES TEMPREF TEMP2 TEMP1 TEMPVSS AVSS AVDD ATST DISCH5 MBAT5 DISCH4 MBAT4 DISCH3 MBAT3 DISCH2 MBAT2 DISCH1 MBAT1 IRQ CLK 6 L9 470 uH Inductor WE7447709471 1 2 3 4 5 6 7 8 9 10 11 12 L8 470 uH Inductor WE7447709471 5 4 4 5 1 2 L10 470 uH Inductor WE7447709471 3 3 2 IN 3 1 OUT 1&5 1 1 L11 470 uH Inductor WE7447709471 J3B 3 2 1 2 2 1 PB2 GND 9302C–AUTO–04/15 15 ATA6870-DK11 [APPLICATION NOTE] 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. 16 Revision No. History 9302C-AUTO-04/15 Put document in the latest template 9302B-AUTO-06/13 Section 7 “Efficiency” on page 13 updated ATA6870-DK11 [APPLICATION NOTE] 9302C–AUTO–04/15 XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA T: (+1)(408) 441.0311 F: (+1)(408) 436.4200 | www.atmel.com © 2015 Atmel Corporation. / Rev.: 9302C–AUTO–04/15 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation in U.S. and other countries. Other terms and product names may be trademarks of others. DISCLAIMER: The information in this document is provided in connection with Atmel products. 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