Space Power Development – Expanding Heritage with New Technology

Power Matters.TM
Space Power Development – Expanding
Heritage with New Technology
Microsemi Space Forum 2015
Pat Franks,
Director of Engineering
© 2015 Microsemi Corporation. Company Proprietary.
1
Agenda
 Some topics arising from SPM’s Custom Space Power
Development Programs
•
•
•
•
Mitigation of SEE effects in PWM Controllers
An Introduction of SiC Technology to Space
Evolution of Intelligent Power Management
A complimentary venture in Aviation
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
2
Mitigation of SEE effects in PWM Controllers
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
3
PWM UC1846 Controller Radiation Issues
INTERNAL VREF DRIFT
Drift of the internal VREF is
mitigated by using an
external temperature
compensated RADHARD
voltage reference to
maintain tight regulation.
SCR
SEE activates the SCR latch
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
4
UC1846 SEU
The UC1846 PWM IC has long space heritage. This
PWM has been tested for single event transient
performance by Lockheed and others and SEU
performance reports are provided by Lockheed and
NASA.
The conclusion is that SEE activates the SCR latch.
The SCR latch is specified to remain latched as long
as greater than 3 milliamp anode current is provided
via pin 1, the Current Limit Adjust / Soft Start pin of the
IC.
It has been demonstrated by SEE testing, circuit
simulation and electrical test, that eliminating the
anode current to the SCR latch, allows the SCR to
reset in the order of micro seconds.
Solutions rely on eliminating the anode current to the
SCR latch.
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
5
UC1846 SEU MITIGATION
External Latch diverts current
from internal SCR latch for
sufficient time to ensure SCR
Latch reset
Vref
R4
D1
Sof tStart
C1
R3
Q2
R5
Q1
SCR
R2
C2
Customer would not approve our Heritage circuit without validation!!
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
6
UC1846 SEU -LAB ELECTRICAL
VERIFICATION
Output Voltage at max load
Ch1: Output Voltage at max load
Ch2: PWM- pin 1.
Ch3: applied pulse to PWM- pin 16 (SD) .
Customer still not convinced!!
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
7
UC1846 SEU – SEE TESTING AT LBNL
Lawrence
Berkeley National
Laboratory
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
8
UC1846 SEU -LAB RADIATION
VERIFICATION
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
9
UC1846 SEU – SEE TESTING
Heritage DC-DC Converter
“Host” Power Supply
Mitigation Circuit Identical to
Customer’s.
UC1846 specially extended on
a socket to allow multiple
evaluations
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
10
Radiation Test Results
Output Voltage at max load
Ch1: PWM- pin 1.
Ch2: PWM output pulses
Ch3: Output Voltage at max load
Ch4: Input line voltage
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
11
An Introduction of Silicon Carbide (SiC)
Technology to Space
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
12
A Demanding System Requirement
 High efficiency essential
– Mission duty
– Heat Dissipation
 Precision current management
– Balanced inputs
– Individual & Joint Limit strategies
 Precision voltage output
– Tight load transient response limits
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
13
Power Topology
 Efficiency is an overarching
requirement
 Two Switch Forward Topology
 Multiple Secondary's to
promote current sharing
– However not for freewheel current
 IN6674 Space qualified silicon
Free Wheeling
Diodes
diodes for all positions initially
 Problems with freewheeling
diodes prompted substitution
of SiC Diodes
– Promotes electrical reliability
– Promotes high efficiency
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
14
Silicon Diode Reverse Recovery
Temperature Effect
Diode Losses
 With increasing temperature:
–
–
–
–
–
Qrr
Qrr increases, higher Irr peak and longer trr
Progressively Higher energy in Leakage inductance
Higher diode losses ----- potential for thermal runaway
Higher Peak reverse diode voltage stress
Performance and Risk unacceptable for the application
© 2015 Microsemi Corporation. Company Proprietary.
Leakage Energy
Increasing Temperature
Power Matters.TM
15
High Power DC-DC Converter benefits
from SiC
Comparison of Silicon and
Silicon Carbide Forward Voltage
Drops
Current Driving a Silicon
Carbide Free Wheeling Diode
Current Driving a Silicon Free
Wheeling Diode
• Forward voltage drop favors Silicon
• However the dominant loss in the
topology comes from reverse recovery
• Silicon Carbide a clear winner with
close to zero Qrr!!
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
16
Microsemi responds with a strong InterDivisional solution
 Initial proof of concept from a
Plastic Package SiC Diode
– Switched out on Brass Board
– Plastic not acceptable for Space
 SiC Die from Microsemi Bend
Oregon (PPG) {now DPG}
 Hermetic Packaging capability
from Lawerence Mass (HRG)
{now also DPG}
 Microsemi builds & qualifies a
new hermetic SiC diode part
in very short order
– Recovery plan supports critical
program schedule
– Recovery plan necessarily includes
full ENVIRONMENTAL and
RADIATION assessments of the new
SiC diode
Efficiency at ambient temperature
95.0%
94.5%
94.0%
93.5%
Min Line
Nom Line
93.0%
Max Line
92.5%
92.0%
91.5%
91.0%
0A
20A
40A
60A
80A
100A
Load Current
Final efficiency of SiC version meets desired efficiency
profile
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
17
Test Assets to support rapid evaluations
 Dedicated Test Station
 Part Number 7500659
–
–
–
–
–
DC Source
Electronic Load
Data logger
Interface harness
Unique interface circuitry
 Standard equipment
–
–
–
–
Oscilloscope with probes
Thermal chamber
Thermal imaging
Spectrum analyzer
Early investment is paid back by test labor savings even in the first article
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
18
SiC Diode Chip from Plastic to Hermetic
NSD305 TO254 Kyocera BeO Metalize
102x102x15 SiC Dual Chips (1-Side) Tc=25C
Solve
Auto Scale
Force Scale
Copy Plot
Thermal Impedance Profile
Copy Data
NSD305 TO254 Kyocera BeO Metalize 102x102x15 SiC Dual Chips (1-Side) Tc=25C
10
Theta (C/W)
1
0.1
0.01
0.000001
0.00001
0.0001
Thin Plot = Maximum Thermal Impedance Limit
Thick Plot = Design Thermal Impedance Value
0.001
0.01
0.1
1
10
Time (s)
Data Similar ---- 0.3 @ 0.001 sec ; 1.1 @ 1 sec
 Early transient impedance plots indicate that ratings are very similar
 HOWEVER INITIAL TO254 Surge current screening @120A failed >50% devices
– Suitable surge screening level an URGENT HOT TOPIC!!!
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
19
Revised Surge Current Test Requirements
 Forward current as a
function of forward voltage
from Plastic Datasheet
 Black circles represent
measured Vf values
 Orange circles represent
effective Vf values adjusted
for dynamic temperature
rise
 Orange points assume 50%
additional energy input due
to dT/dt
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
20
Revised Surge Current Test Requirements
 Balanced risk principle
– Strong enough to stress the diode and expose defects, die & attach
– Not so strong as to weaken the diode reducing reliability & life
 Aim for a nominal Tj rise of 125°C (over 25°C ambient)
 Vf is a function of If and temperature
– Die temperature rises during surge pulse
– Need to account for dT/dt in total energy calculation
 Rational & assumptions developed in following slides
 Qualitative validation part of rational
– Back off from point of failure
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
21
Revised Surge Current Test Requirements
If_Surge
10
20
50
80
81
82
83
84
85
86
87
88
89
90
95
100
Vf=
Vf
1.56
1.87
3.22
5.54
5.64
5.74
5.85
5.95
6.06
6.17
6.29
6.40
6.52
6.64
7.27
7.95
1.3017*exp(0.0181*If)
Best Tj
28.72
33.92
63.37
130.67
133.94
137.30
140.75
144.28
147.91
151.63
155.44
159.35
163.35
167.46
189.62
214.70
Nom Tj
29.46
35.70
71.05
151.80
155.73
159.76
163.90
168.14
172.49
176.95
181.52
186.22
191.03
195.96
222.55
252.64
(From Leas Squares Fit Analysis)
WC Tj
30.20876
37.48452
78.71973
172.9366
177.5216
182.2248
187.0489
191.9967
197.0712
202.2754
207.6123
213.085
218.6967
224.4507
255.4731
290.583
Tj = Power *q JC + Tambient
*The junction temperature calculation assumes 50% more
power as a result of the continued increase in temperature rise
that occurs after Vf and If have been measured, which also
account for the exponential rise in VF as a function of current
and temperature.
See explanation from Jim Brandt.
Best Tj based on Best Theta_jc = 0.5C/w @ 8.3mS
Nom Tj based on Nominal Theta_jc = 0.6C/w @ 8.3mS
WC Tj based on Worst Case Theta_jc = 0.7C/W @ 8.3mS
 80 amps half sine @8.3ms recommended for surge test
 Nominal Tj matches test objective and Best / Worst spread OK
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
22
Surge Current Test to Failure
type: APT200SCD65K
lot # A0005776
one 8.3 ms surge pluse at each value, Ir read after surge.
equipment: fec pls 1000 (ut 10491) ir done on curve tracer (ut 6418) socket 8070H-002.
IR
Surge
IR
Surge
IR
Surge
IR
Surge
650V
50A
650V
80A
650V
100A
650V
120A
serial #
ua
V
ua
V
ua
V
ua
V
12 leg A
4.00
2.60
4.00
4.16
4.00
6.55
4.00
13.60
12 leg B
2.80
2.60
3.80
4.20
3.80
6.77
3.80
14.25
13 leg A
1.40
2.57
1.60
4.15
2.50
6.51
2.50
13.25
13 leg B
3.80
2.59
3.80
4.19
2.60
6.72
2.60
14.23
14 leg A
2.20
2.56
2.20
4.09
2.30
6.55
2.30
14.00
14 leg B
2.80
2.57
2.80
4.14
2.80
6.72
2.80
14.34
IR
650V
ma
>300
>300
>300
>300
>300
>300
 Data taken in TO254 Package
 ½ Sine wave current pulses
 No degradation in post surge
leakage up to 100 amp level
 Damage / failure high probability @
120 amp level
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
23
Qualitative Evidence from Burn-in
Device Name NSD305
Lot Name
A00040278
Comment
PRE HTRB
Test
4
5
6
7
8
9
10
11
Item
ICBO
BVCBO VFBC
ICBO
IR
BVR
VF
IR
Limit
200.0uA 652.0 V 1.800 V 200.0uA 200.0uA
652.0 V 1.800 V 200.0uA
Limit Min Max
<
>
<
<
<
>
<
<
Bias 1
VCB 522 V IC 250 uA IB 20.0 A VCB 520 V VAK 522 V IC 250 uA IAK 20.0 A VAK 520 V
Bias 2
VMAX 999 V
VMAX 999 V
Time
2.500ms 2.500ms 380.0us 2.500ms 2.500ms 2.500ms 380.0us 2.500ms
Wafer Data
No
Serial
Bin
16
1 293.0n
971.4
1.577 292.0n
1.196u
830.8
1.572 1.206u
17
1 1.010u
9.990k
1.587 835.5n
1.142u
945.2
1.58 1.071u
18
1 1.162u
9.990k
1.578 1.028u
5.355u
936.4
1.588 5.638u
19
1 235.1n
9.990k
1.571 230.0n
203.5n
976.2
1.565 192.6n
20
1 2.642u
9.990k
1.563 2.559u
244.0n
9.990k
1.57 232.0n
21
1 230.0n
9.990k
1.584 219.2n
549.0n
920.5
1.593 523.0n
22
1 2.140u
784.2
1.571 2.115u
444.5n
942.6
1.562 432.1n
23
1 179.3n
9.990k
1.566 177.5n
118.3n
9.990k
1.567 23.55n
25
1 4.815u
9.990k
1.549 5.061u
5.451u
9.990k
1.547 5.399u
29
1 3.829u
9.990k
1.567 3.624u
8.596u
936.6
1.556 8.501u
33
1 998.0n
9.990k
1.572 1.063u
8.194u
9.990k
1.569 7.673u
34
1 4.813u
9.990k
1.548 4.949u
2.217u
9.990k
1.547 2.059u
No Surge (Eng Lot)
No Surge (Eng Lot)
No Surge (Eng Lot)
No Surge (Eng Lot)
No Surge (Eng Lot)
Post 10x 100A Surge (Eng Lot)
Post 10x 100A Surge (Eng Lot)
Post 10x 100A Surge (Eng Lot)
Post 10X 120A Surge (Production Lot)
Post 10X 120A Surge (Production Lot)
Post 10X 120A Surge (Production Lot)
Post 10X 120A Surge (Production Lot)
Device Name NSD305
Lot Name
A00040278
Comment
POST HTRB
Test
4
5
6
7
8
9
10
11
Item
ICBO
BVCBO VFBC
ICBO
IR
BVR
VF
IR
Limit
200.0uA 652.0 V 1.800 V 200.0uA 200.0uA
652.0 V 1.800 V 200.0uA
Limit Min Max
<
>
<
<
<
>
<
<
Bias 1
VCB 522 V IC 250 uA IB 20.0 A VCB 520 V VAK 522 V IC 250 uA IAK 20.0 A VAK 520 V
Bias 2
VMAX 999 V
VMAX 999 V
Time
2.500ms 2.500ms 380.0us 2.500ms 2.500ms 2.500ms 380.0us 2.500ms
Wafer Data
No
Serial
Bin
16
1 323.0n
971
1.581 311.2n
1.409u
808.8
1.577 1.455u
17
1 518.8n
9.990k
1.59 471.2n
652.3n
939.5
1.585 652.1n
18
1 1.446u
9.990k
1.579 1.095u
2.646u
947.6
1.589 3.206u
19
1 225.3n
9.990k
1.57 225.5n
204.0n
973.3
1.564 194.5n
20
1 1.119u
9.990k
1.564 1.123u
232.7n
9.990k
1.571 229.2n
21
1 208.0n
9.990k
1.577 198.2n
476.0n
900.9
1.585 465.1n
22
1 2.363u
765.1
1.572 2.368u
396.3n
943.8
1.563 395.0n
23
1 194.6n
9.990k
1.566 186.5n
138.9n
9.990k
1.569 136.0n
25
1 1.488u
9.990k
1.549 1.485u
4.479u
9.990k
1.548 4.429u
29
1 1.353u
9.990k
1.561 1.314u
8.309u
939.9
1.553 8.270u
33
1 304.1n
9.990k
1.569 279.1n
3.079u
9.990k
1.568 2.302u
34
1 1.311u
9.990k
1.546 1.287u
625.5n
9.990k
1.546 615.5n
No Surge (Eng Lot)
No Surge (Eng Lot)
No Surge (Eng Lot)
No Surge (Eng Lot)
No Surge (Eng Lot)
Post 10x 100A Surge (Eng Lot)
Post 10x 100A Surge (Eng Lot)
Post 10x 100A Surge (Eng Lot)
Post 10X 120A Surge (Production Lot)
Post 10X 120A Surge (Production Lot)
Post 10X 120A Surge (Production Lot)
Post 10X 120A Surge (Production Lot)
Pre Burn In
© 2015 Microsemi Corporation. Company Proprietary.
Engineering and
production surge
test survivors
were subjected to
HTRB Burn in. All
samples passed.
Post Burn In
Power Matters.TM
24
Screening Requirements on the SiC Diode
 Screening Requirements
Inspection/Test 1/
Initial Electrical Measurements
Temperature Cycling
Surge Current
Constant Acceleration
Method
4011
4016
4021
4001
1051
4066
2006
PIND
Mid Electrical Measurements
Burn-In
2052
4011
4016
4021
4001
1038
4011
Final Electrical Measurements
Delta Calculations
4016
4021
4001
3101 or
4081
4011
4016
MIL-STD-750
Conditions
VF1 at 25ᵒC, IF = 20A (pk) pulsed, VF1 = 1.8V max
IRM at 25ᵒC, DC Method VR = 520V, IRM = 200uA max
VBR at 25ᵒC, IR = 200uA, VBR = 650V min
CT at 25ᵒC, VR = 0Vdc, f = 1MHz, Vsig = 50mV(p-p),CT = 2000pF max
20 cycles: -55ᵒC to +175ᵒC
Condition A: 10 surges, 1 per/min, 7mS min., 80A
20,000 g's Y1 direction,
10,000 g's for Power rating > 10 Watts.
1 min, Hold time not required
Condition A
VF1 at 25ᵒC, IF = 20A (pk) pulsed, VF1 = 1.8V max
IRM at 25ᵒC, DC Method VR = 520V, IRM = 200uA max
VBR at 25ᵒC, IR = 200uA, VBR = 650V min
CT at 25ᵒC, VR = 0Vdc, f = 1MHz, Vsig = 50mV(p-p),CT = 2000pF max
Condition A, VR =520V, TJ>150°C, Duration 160 hrs
VF1 at 25ᵒC, IF = 20A (pk) pulsed, VF1 = 1.8V max
VF2 at 175ᵒC, IF = 20A (pk) pulsed, VF1 = 2.5V max
IRM at 25ᵒC, DC Method VR = 520V, IRM = 200uA max
VBR at 25ᵒC, IR = 200uA, VBR = 650V min
CT at 25ᵒC, VR = 0Vdc, f = 1MHz, Vsig = 50mV(p-p),CT = 2000pF max
ThetaJX, See MIL-PRF-19500
ΔVF1 at 25ᵒC, IF = 10A (pk) pulsed, +/- 100mV from initial value
IRM at 25ᵒC, DC Method VR = 520V, ΔIRM = +/- 100% of Initial Value
Hermetic Seal:
Fine
1071
G2
Gross
B&D
Radiographic
2076
1/ Requirements are in accordance with EEE-INST-002
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
25
Radiation Evaluation
 One Sample
tested to 260Vr
under Kr beam
 Three samples
tested to 250Vr
under Cu beam
 All samples
passed without
evidence of
breakdown
 Test equipment
limited to 300Vr.
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
26
Summary and Conclusion for SiC Diodes
 SiC diodes can greatly enhance efficiency and reliability of
high power space DC-DC converters
 SiC diodes require a deep derating of Vrr to reliably
withstand SEE.
– 650V diode was derated to 250V in this case (38% of rated)
– Derating ratio does not necessarily apply to other Vrr ratings
 We are early in characterizing SiC diodes for Space but the
potential benefits certainly indicate a priority to proceed
 Surge current screening of SiC diodes should carefully
account for the positive Vf characteristic and dynamic
heating of the SiC die during the pulse
– This effect is much less important in Si Diodes
 Overall a great example of Microsemi’s ability to solve
serious technical issues in real time by drawing on vertical
resources across divisions
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
27
The Roadmap for Microsemi SPM
 More SMT??!
AEROSPACE
SPACE
 Intelligent Power
 Higher System
Integration
MILITARY & DEFENSE
 Complementary
EXTREME
ENVIRONMENT
developments in
Aviation
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
28
PWA Surface Mount vs. Hybrid Technology
 PWA Standard Modules are constructed with Heritage SMT processes
SMT
HYBRID
Assembly Process
Automated
Manual
Device Attachment
Solder
Eutectic / Epoxy
Connections
Solder
Wire Bond
Components
Package pre-screened
Basic Die
SMT Process Yields High Product Consistency and Quality
Following the launch of our highly successful
SA50 DC-DC Converter product line, we see
a rising demand to replace Hybrid DC- DC
Converters with the SMT alternative.
• Faster lead times
• Ability to customize and add value
• Lower risk of LOT Qualification issues with
disastrous reach back
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
29
Intelligent Power - RTG4
 Total-dose hardening of Flash cells
 Single-event hardening of registers, SRAM, multipliers, PLLs
Comprehensive radiation-mitigated architecture
for signal processing applications
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
30
Radiation Tolerant Power Supplies
 Microsemi provides many Radiation-Tolerant components
that can be used to supply power to RTG4 FPGAs
 Engineers should consider the following when selecting
power supply components
• Calculate required power of the RTG4 device
– PowerCalc spreadsheet, SmartPower tool in Libero design software
• Select an appropriate Radiation-Tolerant regulator that can supply the
required power and meet all power requirements of RTG4
– Radiation-Tolerant Linear-Regulator (Microsemi)
– Radiation-Tolerant Switching regulator (Microsemi)
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
31
Solar Array Conversion – PDU Concept
 RTG4 FPGA manages full Solar
V, I
HEAU A HEAU B
HLCP
HLCP
ENABLE ENABLE
TELEMETRY
INPUT CONTROL
SA WING 2
100V
REDUNDANT
CONVERTER
(X4)
1
TELEMETRY
HLPC RELAY CONTROL
100V BUS
100V to EPM 4
INPUT CONTROL
BATTERY
DISCONNECT
RELAYS
100V to EPM 2
100V to EPM 3
28V
REDUNDANT
CONVERTER
(X4)
V, I
UMBILICAL
INTERFACE
1
POWER BUS
GROUND TEST
EGSE POWER
HEAU B
HLCP
ENABLE
(X4)
100V to EPM 1
INPUT CONVERTER
SA WING 1
HEAU A
HLCP
ENABLE
(X4)
BATTERY
CHARGE
CONTROL
28V TO SPACECRAFT
HVAB
CONTROLLER MIL-STD-1553B
REDUNDANT
&
INTERFACE
A/D & D/A
BATTERY
REGULATION STATES
CONSTANT BATTERY CURRENT
CONSTANT BATTERY VOLTAGE
PEAK ARRAY POWER
Voltage
HEAU A COMM
HEAU B COMM
ANALOG TELEMETRY
GROUND TEST
Array conversion controls
• Generates PWM Drives
 Data Acquisition
• SA Voltage & Current
• Battery Voltage & Current
 Battery at End Of Charge Voltage
• SA Converter regulates Constant
 Battery Charging
• SA available power > load
• SA Converter regulates constant
current
• Current level driven to match
commanded battery charge current
 Peak Power Mode
•
•
SA available power < load
SA Converter reflected input voltage
adjusted to maximum power point
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
32
Aviation – A Complementary Sector
POWER CORE MODULE MAICMMC40X120A
SiC based flight critical actuation motor drive
Features


SiC MOSFET and SiC Schottky diode for power conversion
o
Low RDS(on) for MOSFET
o
Zero Reverse Recovery for SiC SBD
o
High Power Efficiency
Integrated Gate drive circuitry with isolation and shoot through
detection
 Leading the way for future
space applications

5kVA / 25Amp drive capability

Integrated control card with embedded FPGA for H-bridge
control

High speed LVDS communication bus for data exchange

Internal three phase current sense, DC bus voltage sense circuitry
and temperature monitoring
– Serial Bus Control
– Embedded FPGA Controller
– 2 year SiC proof of life
program
– SEE radiation requirement

AlSiC base plate for extended reliability and reduced weight

Si3N4 substrate for improved thermal performance

Direct mounting to Heatsink (Isolated Package)

Custom Variants are available. Please contact factory
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
33
Thank You
Microsemi Corporation (MSCC) offers a comprehensive portfolio of semiconductor and system solutions for
communications, defense & security, aerospace and industrial markets. Products include high-performance and radiationhardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and
synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF
solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Power-overEthernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso
Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: [email protected]
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular
purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other
products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any
performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products,
alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is
the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is
provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or
implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information.
Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any
products and services at any time without notice.
©2015 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other
trademarks and service marks are the property of their respective owners.
© 2015 Microsemi Corporation. Company Proprietary.
Power Matters.TM
34