Low Power, 350 MHz Voltage Feedback Amplifier AD8039-EP FEATURES Battery-powered instrumentation Filters ADC drivers Level shifting Buffering Photo multipliers 8 +VS –IN1 2 7 VOUT2 +IN1 3 6 –IN2 –VS 4 5 +IN2 09557-001 AD8039-EP VOUT1 1 Figure 1. 8-Lead SOIC_N 24 21 G = +10 18 15 G = +5 12 9 G = +2 6 3 G = +1 0 –3 –6 0.1 1 10 FREQUENCY (MHz) 100 1000 09557-002 APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GAIN (dB) Low power: 1 mA quiescent current per amplifier High speed −3 dB bandwidth (G = +1): 350 MHz Slew rate: 425 V/μs Low cost Low noise 8 nV/√Hz at 100 kHz 600 fA/√Hz at 100 kHz Low input bias current: 750 nA maximum Low distortion −90 dB SFDR at 1 MHz −65 dB SFDR at 5 MHz Wide supply range: 3 V to 12 V Small packaging: 8-lead SOIC Supports defense and aerospace applications (AQEC standard) Extended temperature range: −55°C to +105°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request Figure 2. Small Signal Frequency Response for Various Gains, VOUT = 500 mV p-p, VS = ±5 V GENERAL DESCRIPTION The AD8039-EP dual amplifier is a high speed (350 MHz) voltage feedback amplifier with an exceptionally low quiescent current of 1.0 mA per amplifier typical (1.5 mA maximum). Despite its low power and low cost, the amplifier provides excellent overall performance. Additionally, it offers a high slew rate of 425 V/μs and a low input offset voltage of 3 mV maximum. The Analog Devices, Inc., proprietary XFCB process allows low noise operation (8 nV/√Hz and 600 fA/√Hz) at extremely low quiescent currents. Given its wide supply voltage range (3 V to 12 V), wide bandwidth, and small packaging, the AD8039-EP amplifier is designed to work in a variety of applications where power and space are at a premium. The AD8039-EP amplifier has a wide input common-mode range of 1 V from either rail and swings to within 1 V of each rail on the output. This amplifier is optimized for driving capacitive loads up to 20 pF. If driving larger capacitive loads, a small series resistor is needed to avoid excessive peaking or overshoot. The AD8039-EP amplifier is available in an 8-lead SOIC package and is rated to work over the extended temperature range of −55°C to +105°C. Additional application and technical information can be found in the AD8038/AD8039 data sheet. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved. AD8039-EP TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................5 Applications ....................................................................................... 1 Maximum Power Dissipation ......................................................5 Functional Block Diagram .............................................................. 1 Output Short Circuit .....................................................................5 General Description ......................................................................... 1 ESD Caution...................................................................................5 Revision History ............................................................................... 2 Typical Performance Characteristics ..............................................6 Specifications..................................................................................... 3 Outline Dimensions ..........................................................................7 Ordering Guide .............................................................................7 REVISION HISTORY 2/11—Revision 0: Initial Version Rev. 0 | Page 2 of 8 AD8039-EP SPECIFICATIONS TA = 25°C, VS = ±5 V, RL = 2 kΩ, gain = +1, unless otherwise noted. Table 1. Parameter DYNAMIC PERFORMANCE −3 dB Bandwidth Bandwidth for 0.1 dB Flatness Slew Rate Overdrive Recovery Time Settling Time to 0.1% NOISE/HARMONIC PERFORMANCE SFDR Second Harmonic Third Harmonic Second Harmonic Third Harmonic Crosstalk, Output-to-Output Input Voltage Noise Input Current Noise DC PERFORMANCE Input Offset Voltage Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS DC Output Voltage Swing Capacitive Load Drive POWER SUPPLY Operating Range Quiescent Current per Amplifier Power Supply Rejection Ratio −Supply +Supply Test Conditions/Comments Min Typ G = +1, VOUT = 0.5 V p-p, TMIN to TMAX G = +2, VOUT = 0.5 V p-p G = +1, VOUT = 2 V p-p G = +2, VOUT = 0.2 V p-p G = +1, VOUT = 2 V step, RL = 2 kΩ TMIN to TMAX G = +2, 1 V overdrive G = +2, VOUT = 2 V step 300 350 175 100 45 425 325 50 18 MHz MHz MHz MHz V/μs V/μs ns ns fC = 1 MHz, VOUT = 2 V p-p, RL = 2 kΩ fC = 1 MHz, VOUT = 2 V p-p, RL = 2 kΩ fC = 5 MHz, VOUT = 2 V p-p, RL = 2 kΩ fC = 5 MHz, VOUT = 2 V p-p, RL = 2 kΩ f = 5 MHz, G = +2 f = 100 kHz f = 100 kHz −90 −92 −65 −70 −70 8 600 dBc dBc dBc dBc dB nV/√Hz fA/√Hz TA = 25°C TMIN to TMAX 0.5 400 300 4.5 400 TA = 25°C TMIN to TMAX Max 3 4.5 750 2.0 3 ±25 70 VOUT = ±2.5 V RL = 1 kΩ VCM = ±2.5 V, TA = 25°C VCM = ±2.5 V, TMIN to TMAX 61 59 RL = 2 kΩ, saturated output 30% overshoot, G = +2 MΩ pF V dB dB ±4 20 V pF 1.0 TA = 25°C TMIN to TMAX TA = 25°C TMIN to TMAX 71 63 64 63 Rev. 0 | Page 3 of 8 mV mV μV/°C nA μA nA/°C nA dB 10 2 ±4 67 3 TA = 25°C TMIN to TMAX Unit 77 70 12 1.5 2.6 V mA mA dB dB dB dB AD8039-EP TA = 25°C, VS = 5 V, RL = 2 kΩ to VS/2, gain = +1, unless otherwise noted. Table 2. Parameter DYNAMIC PERFORMANCE −3 dB Bandwidth Bandwidth for 0.1 dB Flatness Slew Rate Overdrive Recovery Time Settling Time to 0.1% NOISE/HARMONIC PERFORMANCE SFDR Second Harmonic Third Harmonic Second Harmonic Third Harmonic Crosstalk, Output-to-Output Input Voltage Noise Input Current Noise DC PERFORMANCE Input Offset Voltage Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS DC Output Voltage Swing Capacitive Load Drive POWER SUPPLY Operating Range Quiescent Current per Amplifier Power Supply Rejection Ratio Test Conditions/Comments Min Typ G = +1, VOUT = 0.2 V p-p, TMIN to TMAX G = +2, VOUT = 0.2 V p-p G = +1, VOUT = 2 V p-p G = +2, VOUT = 0.2 V p-p G = +1, VOUT = 2 V step, RL = 2 kΩ TMIN to TMAX G = +2, 1 V overdrive G = +2, VOUT = 2 V step 275 300 150 30 45 365 305 50 18 MHz MHz MHz MHz V/μs V/μs ns ns fC = 1 MHz, VOUT = 2 V p-p, RL = 2 kΩ fC = 1 MHz, VOUT = 2 V p-p, RL = 2 kΩ fC = 5 MHz, VOUT = 2 V p-p, RL = 2 kΩ fC = 5 MHz, VOUT = 2 V p-p, RL = 2 kΩ f = 5 MHz, G = +2 f = 100 kHz f = 100 kHz −82 −79 −60 −67 −70 8 600 dBc dBc dBc dBc dB nV/√Hz fA/√Hz TA = 25°C TMIN to TMAX 0.8 340 275 3 400 TA = 25°C TMIN to TMAX Max 3 4.5 750 2.0 3 ±30 70 VOUT = ±2.5 V RL = 1 kΩ VCM = ±1 V, TA = 25°C VCM = ±1 V, TMIN to TMAX 59 59 RL = 2 kΩ, saturated output 30% overshoot, G = +2 65 Rev. 0 | Page 4 of 8 mV mV μV/°C nA μA nA/°C nA dB 10 2 1.0 to 4.0 65 MΩ pF V dB dB 0.9 to 4.1 20 V pF 3 TA = 25°C TMIN to TMAX Unit 0.9 71 12 1.5 V mA dB AD8039-EP ABSOLUTE MAXIMUM RATINGS 2.0 Rating 12.6 V See Figure 3 ±VS ±4 V −65°C to +125°C −55°C to +105°C 300°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MAXIMUM POWER DISSIPATION The maximum safe power dissipation in the AD8039-EP package is limited by the associated rise in junction temperature (TJ) on the die. The plastic encapsulating the die locally reaches the junction temperature. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8039-EP. Exceeding a junction temperature of 175°C for an extended time can result in changes in the silicon devices, potentially causing failure. The still-air thermal properties of the package and PCB (θJA), ambient temperature (TA), and total power dissipated in the package (PD) determine the junction temperature of the die. The junction temperature can be calculated as 1.5 8-LEAD SOIC_N 1.0 0.5 0 –55 –25 5 35 65 95 AMBIENT TEMPERATURE (°C) 125 09557-003 Parameter Supply Voltage Power Dissipation Common-Mode Input Voltage Differential Input Voltage Storage Temperature Range Operating Temperature Range Lead Temperature (Soldering, 10 sec) MAXIMUM POWER DISSIPATION (W) Table 3. Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board RMS output voltages should be considered. If RL is referenced to −VS, as in single-supply operation, then the total drive power is VS × IOUT. If the rms signal levels are indeterminate, consider the worst case, when VOUT = VS/4 for RL to midsupply. PD = (VS × IS) + (VS/4)2/RL In single-supply operation with RL referenced to −VS, worst case is VOUT = VS/2. Airflow increases heat dissipation, effectively reducing θJA. In addition, more metal directly in contact with the package leads from metal traces, throughholes, ground, and power planes reduces θJA. Figure 3 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 8-lead SOIC_N (125°C/W) on a JEDEC standard 4-layer board. θJA values are approximations. OUTPUT SHORT CIRCUIT Shorting the output to ground or drawing excessive current from the AD8039-EP will likely cause a catastrophic failure. TJ = TA + (PD × θJA) The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) multiplied by the quiescent current (IS). Assuming the load (RL) is referenced to midsupply, the total drive power is VS/2 × IOUT, some of which is dissipated in the package and some in the load (VOUT × IOUT). The difference between the total drive power and the load power is the drive power dissipated in the package. ESD CAUTION PD = quiescent power + (total drive power − load power) PD = [VS × IS] + [(VS/2) × (VOUT/RL)] − [VOUT2/RL] Rev. 0 | Page 5 of 8 AD8039-EP TYPICAL PERFORMANCE CHARACTERISTICS VS = ±5 V, CL = 5 pF, RG = RF = 1 kΩ, RL = 2 kΩ, frequency = 1 MHz, TA = −55°C to +105°C, unless otherwise noted. 2.0 12 1.5 9 1.0 –40°C –55°C 6 –0.5 GAIN (dB) 0 +25°C –1.0 +105°C +85°C –55°C +25°C 3 +105°C 0 –1.5 –2.0 –3 –3.0 0.1 1 10 100 1000 FREQUENCY (MHz) –6 0.1 1 10 100 1000 FREQUENCY (MHz) Figure 4. Small Signal Frequency Response vs. Temperature, Gain = +1, VS = ±5 V, VOUT = 500 mV p-p Figure 5. Large Signal Frequency Response vs. Temperature, Gain = +2, VS = ±5 V, VOUT = 2 V p-p Rev. 0 | Page 6 of 8 09557-005 –2.5 09557-004 GAIN (dB) 0.5 AD8039-EP OUTLINE DIMENSIONS 5.00 (0.1968) 4.80 (0.1890) 1 5 6.20 (0.2441) 5.80 (0.2284) 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY 0.10 SEATING PLANE 0.50 (0.0196) 0.25 (0.0099) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) 45° 8° 0° 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. 012407-A 8 4.00 (0.1574) 3.80 (0.1497) Figure 6. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model 1 AD8039SRZ-EPR7 1 Temperature Range −55°C to +105°C Package Description 8-Lead Standard Small Outline Package [SOIC_N] Z = RoHS Compliant Part. Rev. 0 | Page 7 of 8 Package Option R-8 AD8039-EP NOTES ©2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D09557-0-2/11(0) Rev. 0 | Page 8 of 8