Pressure Freescale Semiconductor MP3V5010 Rev 0, 4/2009 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated MP3V5010 Series 0 to 10 kPa (0 to 1.45 psi) 0.1 to 3.1 V Output The MP3V5010 series piezoresistive transducers are state-of-the-art monolithic silicon pressure sensors designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This transducer combines advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure. Application Examples • • • • Features • • • • • • Hospital Beds HVAC Respiratory Systems Process Control 5.0% Maximum Error Over 0° to 85°C Ideally Suited for Microprocessor or Microcontroller-Based Systems Temperature Compensated Over –40° to +125°C Thermoplastic (PPS) Surface Mount Package Patented Silicon Shear Stress Strain Gauge Available in Differential and Gauge Configurations ORDERING INFORMATION Package Case Device Name No. Options Small Outline Package (MP3V5010 Series) MP3V5010GC6U Rails 482A MP3V5010GC6T1 Tape & Reel 482A MP3V5010GP Trays 1369 MP3V5010DP Trays 1351 MP3V5010GVP Trays 1368 None # of Ports Single Dual Gauge • • • Pressure Type Differential Absolute MP3V5010G • • • • • MP3V5010G MP3V5010GP • MP3V5010GP CASE 1369-01 © Freescale Semiconductor, Inc., 2009. All rights reserved. MP3V5010DP CASE 1351-01 MP3V5010DP MP3V5010GVP • SMALL OUTLINE PACKAGE MP3V5010GC6U/C6T1 CASE 482A-01 Device Marking MP3V5010GVP CASE 1368-01 Pressure Operating Characteristics Table 1. Operating Characteristics (VS = 3.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2. Decoupling circuit shown in Figure 3 required to meet specification.) Characteristic Symbol Min Typ Max Unit Pressure Range(1) POP 0 — 10 kPa Supply Voltage(2) VS 2.7 3.0 3.3 Vdc Supply Current Io — 7.0 10 mAdc Minimum Pressure Offset(3) @ VS = 3.0 Volts (0 to 85°C) Voff 0.1 0.24 0.38 Vdc Full Scale Output(4) @ VS = 3.0 Volts (0 to 85°C) VFSO 2.81 2.94 3.08 Vdc Full Scale Span(5) @ VS = 3.0 Volts (0 to 85°C) VFSS — 2.7 — Vdc Accuracy(6) (0 to 85°C) — — — ±5.0 %VFSS V/P — 270 — mV/kPa Response Time(7) tR — 1.0 — ms Output Source Current at Full Scale Output IO+ — 0.1 — mAdc Warm-Up Time(8) — — 20 — ms Offset Stability(9) — — ±0.5 — %VFSS Sensitivity 1. 1.0 kPa (kiloPascal) equals 0.145 psi. 2. Device is ratiometric within this specified excitation range. 3. Offset (Voff) is defined as the output voltage at the minimum rated pressure. 4. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure. 5. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 6. Accuracy (error budget) consists of the following: Linearity: Temperature Hysteresis: Pressure Hysteresis: TcSpan: TcOffset: Variation from Nominal: Output deviation from a straight line relationship with pressure over the specified pressure range. Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure, at 25°C. Output deviation over the temperature range of 0° to 85°C, relative to 25°C. Output deviation with minimum rated pressure applied, over the temperature range of 0° to 85°C, relative to 25°C. The variation from nominal values, for Offset or Full Scale Span, as a percent of VFSS, at 25°C. 7. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 8. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized. 9. Offset Stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test. MP3V5010 2 Sensors Freescale Semiconductor Pressure Maximum Ratings Table 2. Maximum Ratings(1) Rating Symbol Value Unit Maximum Pressure (P1 > P2) Pmax 75 kPa Storage Temperature Tstg –40 to +125 °C Operating Temperature TA –40 to +125 °C 1. Exposure beyond the specified limits may cause permanent damage or degradation to the device. Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip. VS 2 Thin Film Temperature Compensation and Gain Stage #1 Sensing Element Gain Stage #2 and Ground Reference Shift Circuitry Vout 4 Pins 1, 5, 6, 7, and 8 are NO CONNECTS for Small Outline Package Device GND 3 Figure 1. Integrated Pressure Sensor Schematic MP3V5010 Sensors Freescale Semiconductor 3 Pressure ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature compensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the Differential or Gauge configuration in the basic chip carrier (Case 482). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. The MP3V5010 series pressure sensor operating characteristics, and internal reliability and qualification tests are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Contact the factory for information regarding media compatibility in your application. Figure 3 shows the recommended decoupling circuit for interfacing the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0° to 85°C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range. Fluoro Silicone Gel Die Coat Die Stainless Steel Cap P1 Thermoplastic Case Wire Bond Lead Frame P2 Die Bond Differential Sensing Element Figure 2. Cross-Sectional Diagram SOP (not to scale) +3 V Vout OUTPUT Vs IPS 1.0 μF 0.01 μF GND 470 pF Figure 3. Recommended Power Supply Decoupling and Output Filtering (For additional output filtering, please refer to Application Note AN1646.) MP3V5010 4 Sensors Freescale Semiconductor Pressure 3 Transfer Function: Vout = VS *(0.09 * P+0.08) ± ERROR VS = 3.0 Vdc TEMP = 0 to 85°C Output (V) 2 TYPICAL MAX MIN 1 0 0 10 Differential Pressure (kPa) Figure 4. Output versus Pressure Differential Transfer Function Nominal Transfer Value: Vout = VS x (0.09 x P + 0.08) ± (Pressure Error x Temp. Factor x 0.09 x VS) VS = 3.0 V ± 0.30 Vdc Temperature Error Band MP3V5010 SERIES 4.0 Temp 3.0 Temperature Error Factor –40 0 to 85 +125 2.0 Multiplier 3 1 3 1.0 0.0 –40 –20 0 20 40 60 80 100 120 140 Temperature in °C NOTE: The Temperature Multiplier is a linear response from 0° to –40°C and from 85° to 125°C. MP3V5010 Sensors Freescale Semiconductor 5 Pressure Pressure Error Band 0.5 0.4 0.3 Pressure Error (kPa) 0.2 0.1 0 –0.1 Pressure (kPa) 0 10 –0.2 –0.3 –0.4 –0.5 Pressure Error (Max) 0 to 10 (kPa) ±0.5 (kPa) PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE Freescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing fluoro silicone gel which protects the die from harsh media. The pressure Part Number sensor is designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the following table: Pressure (P1) Side Identifier Case Type MP3V5010GC6U/C6T1 482A Side with Port Attached MP3V5010GP 1369 Side with Port Attached MP3V5010DP 1351 Side with Part Marking MP3V5010GVP 1368 Side with Part Marking MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the surface mount packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct footprint, the packages will self align when subjected to a solder reflow process. It is always recommended to design boards with a solder mask layer to avoid bridging and shorting between solder pads. 0.100 TYP 8X 2.54 0.660 16.76 0.060 TYP 8X 1.52 0.300 7.62 0.100 TYP 8X 2.54 inch mm SCALE 2:1 Figure 5. Small Outline Package Footprint MP3V5010 6 Sensors Freescale Semiconductor Pressure PACKAGE DIMENSIONS -A- D 8 PL 4 0.25 (0.010) 5 N M T B S A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5˚ TYPICAL DRAFT. -BG 8 1 S DIM A B C D G H J K M N S V W W V C H J -T- MILLIMETERS MIN MAX 10.54 10.79 10.54 10.79 12.70 13.21 0.96 1.07 2.54 BSC 0.05 0.25 0.23 0.28 1.55 1.80 0˚ 7˚ 11.28 11.38 18.01 18.41 6.22 6.48 2.92 3.17 SEATING PLANE PIN 1 IDENTIFIER M K INCHES MIN MAX 0.415 0.425 0.415 0.425 0.500 0.520 0.038 0.042 0.100 BSC 0.002 0.010 0.009 0.011 0.061 0.071 0˚ 7˚ 0.444 0.448 0.709 0.725 0.245 0.255 0.115 0.125 CASE 482A-01 ISSUE A SMALL OUTLINE PACKAGE 2 PLACES 4 TIPS 0.006 (0.15) C A B E A GAGE PLANE e 5 4 e/2 θ .014 (0.35) L D A1 DETAIL G 8 1 b 0.004 (0.1) 8X F M C A B E1 B N GND +Vout Vs -Vout N/C N/C N/C N/C STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. N/C Vs GND Vout N/C N/C N/C N/C ∅T M A P STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 8X 0.004 (0.1) K DETAIL G C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 (0.152) PER SIDE. 4. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.008 (0.203) MAXIMUM. DIM A A1 b D E E1 e F K L M N P T θ INCHES MILLIMETERS MIN MAX MIN MAX 0.370 0.390 9.39 9.91 0.002 0.010 0.05 0.25 0.038 0.042 0.96 1.07 0.465 0.485 11.81 12.32 0.680 0.700 17.27 17.78 0.465 0.485 11.81 12.32 0.100 BSC 2.54 BSC 0.240 0.260 6.10 6.60 0.115 0.135 2.92 3.43 0.040 0.060 1.02 1.52 0.270 0.290 6.86 7.37 0.160 0.180 4.06 4.57 0.009 0.011 0.23 0.28 0.110 0.130 2.79 3.30 0˚ 7˚ 0˚ 7˚ CASE 1351-01 ISSUE O SMALL OUTLINE PACKAGE MP3V5010 Sensors Freescale Semiconductor 7 Pressure PACKAGE DIMENSIONS CASE 1368-01 ISSUE C SMALL OUTLINE PACKAGE MP3V5010 8 Sensors Freescale Semiconductor Pressure PACKAGE DIMENSIONS CASE 1368-01 ISSUE C SMALL OUTLINE PACKAGE MP3V5010 Sensors Freescale Semiconductor 9 Pressure PACKAGE DIMENSIONS CASE 1368-01 ISSUE C SMALL OUTLINE PACKAGE MP3V5010 10 Sensors Freescale Semiconductor Pressure PACKAGE DIMENSIONS 2 PLACES 4 TIPS 0.008 (0.20) C A B E A GAGE PLANE e 5 4 e/2 .014 (0.35) θ L D A1 DETAIL G 8 1 b 0.004 (0.1) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 (0.152) PER SIDE. 4. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.008 (0.203) MAXIMUM. 8X F M E1 B N ∅T K A P C A B 8X M 0.004 (0.1) DETAIL G C SEATING PLANE DIM A A1 b D E E1 e F K L M N P T θ INCHES MILLIMETERS MIN MAX MIN MAX 0.300 0.330 7.11 7.62 0.002 0.010 0.05 0.25 0.038 0.042 0.96 1.07 0.465 0.485 11.81 12.32 0.717 BSC 18.21 BSC 0.465 0.485 11.81 12.32 0.100 BSC 2.54 BSC 0.245 0.255 6.22 6.47 0.120 0.130 3.05 3.30 0.061 0.071 1.55 1.80 0.270 0.290 6.86 7.36 0.080 0.090 2.03 2.28 0.009 0.011 0.23 0.28 0.115 0.125 2.92 3.17 0˚ 7˚ 0˚ 7˚ CASE 1369-01 ISSUE O SMALL OUTLINE PACKAGE MP3V5010 Sensors Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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