Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-ALH102 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features This HMC-ALH102 is ideal for: Noise Figure: 2.5 dB • Wideband Communications Receivers Gain: 11.6 dB @ 10 GHz • Surveillance Systems P1dB Output Power: +10 dBm • Point-to-Point Radios Supply Voltage: +2V @ 55 mA • Point-to-Multi-Point Radios Die Size: 3.0 x 1.435 x 0.1 mm • Military & Space • Test Instrumentation General Description Functional Diagram The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMCALH102 amplifier is ideal for integration into MultiChip-Modules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= 2V [1], Idd = 55mA [2] Parameter Min. Frequency Range Gain 8 Typ. Max. GHz 10 dB Input Return Loss 15 dB Output Return Loss 12 dB 10 dBm Output Power for 1 dB Compression 8 Noise Figure 2.5 dB Supply Current (Idd) 55 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA 1 - 114 Units 2 - 20 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH102 v02.0209 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz 5 4 NOISE FIGURE (dB) GAIN (dB) 12 8 4 3 2 1 0 0 2 6 10 14 18 22 2 6 10 14 18 22 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 -5 -5 RETURN LOSS (dB) 0 -10 -15 -20 -10 -15 LOW NOISE AMPLIFIERS - CHIP 16 RETURN LOSS (dB) 1 Noise Figure vs. Frequency Linear Gain vs. Frequency -20 -25 -25 2 6 10 14 FREQUENCY (GHz) 18 22 2 6 10 14 18 22 FREQUENCY (GHz) Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2.0 V, Id = 55 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 115 HMC-ALH102 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings Drain Bias Voltage +3.7 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power 5 dBm Channel Temperature 180 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 116 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH102 v02.0209 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Pad Number Function Pad Description 1 RFIN This pas is AC coupled and matched to 50 Ohms. 2 Vdd Power Supply Voltage for the amplifier. See Assembly Diagram for required external components. 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LOW NOISE AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 117 HMC-ALH102 v02.0209 Assembly Diagram LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the unused pad should be attached to a 100pF cap to ground, but is not required. 1 - 118 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH102 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane LOW NOISE AMPLIFIERS - CHIP v02.0209 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 119