Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC326MS8G / 326MS8GE v09.0511 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Typical Applications Features The HMC326MS8G / HMC326MS8GE is ideal for: Psat Output Power: +26 dBm • Microwave Radios > 40% PAE • Broadband Radio Systems Output IP3: +36 dBm • Wireless Local Loop Driver Amplifier High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Max. Units GHz 21 0.025 dB 0.035 dB / °C Input Return Loss 12 dB Output Return Loss 7 dB 23.5 dBm 26 dBm 36 dBm Output Power for 1dB Compression (P1dB) 21 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 32 Noise Figure Supply Current (Icc) Vpd = 0V Supply Current (Icc) Vpd = 5V Control Current (Ipd) Switching Speed 1 Typ. 3.0 - 4.5 tOn/tOff 110 5 dB 1 uA 130 160 mA 7 mA 10 ns For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC326MS8G / 326MS8GE v09.0511 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 23 10 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 21 19 -5 -10 +25C +85C -40C 17 -15 15 -20 2 2.5 3 3.5 4 4.5 5 5.5 3 6 3.25 3.5 FREQUENCY (GHz) 30 28 28 +25C +85C -40C 24 22 4.25 4.5 26 24 +25C +85C -40C 22 20 20 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 4.25 4.5 FREQUENCY (GHz) Power Compression @ 3.5 GHz Output IP3 vs. Temperature 45 Pout (dBm), Gain (dB), PAE (%) 40 38 OIP3 (dBm) 4 Psat vs. Temperature 30 Psat (dBm) OUTPUT P1dB (dBm) P1dB vs. Temperature 26 3.75 FREQUENCY (GHz) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 25 25 36 34 +25C +85C -40C 32 40 35 30 25 20 15 10 Output Power (dBm) Gain (dB) PAE (%) 5 0 30 3 3.25 3.5 3.75 4 FREQUENCY (GHz) 4.25 4.5 -8 -6 -4 -2 0 2 4 6 8 10 12 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC326MS8G / 326MS8GE v09.0511 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) -3 +25C +85C -40C -5 -10 -15 -6 -9 +25C +85C -40C -12 -15 -20 3 3.25 3.5 3.75 4 4.25 3 4.5 3.25 3.5 3.75 4 4.25 4.5 4.25 4.5 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 10 0 -10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 0 -20 +25C +85C -40C -30 -40 6 4 +25C +85C -40C 2 -50 0 -60 3 3.25 3.5 3.75 4 4.25 3 4.5 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) Gain, Power & Quiescent Supply Current vs. Vpd @3.5 GHz 150 PSAT 24 120 P1dB 21 90 18 60 GAIN 15 Icc (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 27 30 Icc 12 1.5 0 2 2.5 3 3.5 4 4.5 5 Vpd (Vdc) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC326MS8G / 326MS8GE v09.0511 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage Range (Vpd) +5.5 Vdc RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 14 mW/°C above 85 °C) 0.916 W Thermal Resistance (junction to ground paddle) 71 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Absolute Maximum Ratings 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC326MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC326MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H326 XXXX H326 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC326MS8G / 326MS8GE v09.0511 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Evaluation PCB List of Materials for Evaluation PCB 104356 Item Description J1 - J2 PCB Mount SMA RF Connector J3 2mm DC Header C1 - C2 330 pF Capacitor, 0603 Pkg. C3 0.7 pF Capacitor, 0603 Pkg. C4 3.0 pF Capacitor, 0402 Pkg. C5 2.2 µF Capacitor, Tantalum L1 3.3 nH Inductor, 0805 Pkg. U1 HMC326MS8G / HMC326MS8GE Amplifier PCB [2] 104106 Eval Board [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, 10 mil thick, tr = 3.48 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC326MS8G / 326MS8GE v09.0511 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz TL1 TL2 TL3 Impedance 50 ohm 50 ohm 50 ohm Physical Length 0.0614” 0.2561” 0.110” Electrical Length @ 3.75 GHz Measurement 10.7° 44.6° 19.2° Center of package pin to center of capacitor C3. Center of capacitor C3 to center TL for inductor. Center of TL for inductor to edge of capacitor C4. AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Application Circuit PCB Material: 10 mil Rogers 4350 or Arlon 25FR Recommended Component Values L1 3.3 nH C1 - C2 330 pF C3 0.7 pF C4 3.0 pF C5 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6