v01.0701 HMC324MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This Amplifier is ideal for RF Systems where high linearity is required such as: P1dB Output Power: +16 dBm • CATV Head-End and Modem Gain: 13 dB • Cellular & Base Stations Single Supply: 8.75V • MMDS Ultra Small Package: MSOP8G Output IP3: +30 dBm • WirelessLAN Functional Diagram General Description The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that contains two non-connected amplifiers in parallel inside an 8 lead MSOPG package. When used in conjunction with an external balun, the outputs of the amplifier can be combined to reduce the 2nd harmonic distortion that is generated by the amplifier. With Vcc at +7.5V, the HMC324MS8G offers 13 dB of gain and with power combining and harmonic cancellation, +24 dBm of output power can be achieved. Using a Darlington feedback pair results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. This amplifier is ideal for RF systems where high linearity is required and can operate in 50-ohm and 75-ohm systems. Electrical Specifications, TA = +25° C Vs= +8.75V, Rbias= 22 Ohm Parameter Units Min. Frequency Range Gain Typ. Max. DC - 3.0 10 Gain Variation Over Temperature GHz 13 16 dB 0.015 0.025 dB/ °C Input Return Loss 10 15 dB Output Return Loss 6 9 dB Reverse Isolation 16 20 dB Output Power for 1dB Compression (P1dB) @ 1 GHz 13 16 dBm Saturated Output Power (Psat) @ 1 GHz 18 21 dBm Output Third Order Intercept (IP3) @ 1 GHz 27 30 dBm Noise Figure 6 dB Supply Current (Icc) 57 mA Note: All specifications refer to a single amplifier. 1 - 158 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC324MS8G v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 20 15 18 5 0 -5 12 10 8 -10 6 -15 4 -20 2 -25 +25 C +60 C -40 C 0 0 1 2 3 4 5 0 6 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 3.5 4 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 +25 C +60 C -40 C -5 -10 -15 -20 -25 AMPLIFIERS - SMT 14 S21 S11 S22 GAIN (dB) RESPONSE (dB) 1 16 10 -5 -10 +25 C +60 C -40 C -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 3.5 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) INPUT RETURN LOSS (dB) 17 - 25 GHz +25 C +60 C -40 C -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 159 HMC324MS8G v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz 24 22 +25 C +60 C -40 C 20 20 18 16 Psat (dBm) P1dB (dBm) 18 14 12 10 16 14 12 10 8 8 6 6 4 4 2 2 0 +25 C +60 C -40 C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 FREQUENCY (GHz) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 2 2.5 3 3.5 Power Compression @ 2 GHz 18 Pout Gain PAE 0 2 4 6 16 14 12 10 8 6 4 2 0 Pout Gain PAE -2 -4 -6 -20 -18 -16 -14 -12 -10 -8 8 10 12 INPUT POWER (dBm) -6 -4 -2 0 INPUT POWER (dBm) Output IP3 vs. Temperature 34 32 +25 C +60 C -40 C 30 IP3 (dBm) 28 26 24 22 20 18 16 14 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 1 - 160 4 FREQUENCY (GHz) Power Compression @ 1 GHz Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 17 - 25 GHz 24 22 Pout (dBm), GAIN (dB), PAE (%) 1 GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 2 4 6 v01.0701 HMC324MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz Absolute Maximum Ratings 8 Volts Input Power (RFin)(Vcc= +5V) +20 dBm Channel Temperature (Tc) 150 °C Continuous Pdiss (T= 85 °C) (derate 4.41 mW/°C above 85 °C) 507 mW Storage Temperature -65 to +150° C Operating Temperature -40 to +85° C 1 AMPLIFIERS - SMT DC Voltage on Pin 1 Outline Drawing 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE INPREGNATED. B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS) 4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH USING WHITE INK, LOCATED APPROX AS SHOWN 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 161 v01.0701 HMC324MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz AMPLIFIERS - SMT 1 Application Circuit Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1 and 4. 2. External blocking capacitors are required on Pins 1, 4, 5, and 8. 1 - 162 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] v01.0701 HMC324MS8G MICROWAVE CORPORATION GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz 1 AMPLIFIERS - SMT Evaluation PCB for HMC324MS8G The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item Description J1 - J4 PC Mount SMA Connector U1 HMC324MS8G PCB* 104221 Evaluation PCB 1.5" x 1.5" * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 163