Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC342LC4 v04.0514 LOW NOISE AMPLIFIERS - SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Typical Applications Features The HMC342LC4 is ideal for: Noise Figure: 3.5 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios & VSAT Single Positive Supply: +3V @ 43 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use RoHS Compliant 4x4 mm SMT Package Functional Diagram General Description The HMC342LC4 is a GaAs pHEMT MMIC Low Noise Amplifier housed in a leadless 4x4 mm RoHS compliant SMT package. Operating from 13 to 25 GHz, the amplifier provides 22 dB of gain and +19 dBm of output IP3 from a single +3V supply. The low noise figure performance of 3.5 dB is ideal for receive and transmit pre-driver applications. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC342LC4 allows the use of surface mount manufacturing techniques and requires no external matching components. Electrical Specifications, TA = +25° C, Vdd = +3V, Idd = 43 mA Parameter Min. Frequency Range Gain Gain Variation Over Temperature 1 Typ. Max. Min. 13 - 18 19 Typ. Max. Min. 18 - 22 22 17 Typ. Max. 22 - 25 20 16 Units GHz 19 dB 0.025 0.035 0.025 0.035 0.025 0.035 dB/ °C Noise Figure 3.5 4.0 3.5 4.0 3.5 4.5 dB Input Return Loss 15 15 10 Output Return Loss 15 20 15 dB Output Power for 1 dB Compression (P1dB) 7 8 9 dBm Saturated Output Power (Psat) 9 11 11.5 dBm dB Output Third Order Intercept (IP3) 16 19 20 dBm Supply Current (Idd) (Vdd = +3V) 43 43 43 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC342LC4 v04.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 25 10 22 5 GAIN (dB) RESPONSE (dB) 15 S21 0 S11 -5 S22 -10 19 +25 C +85 C -40 C 16 -15 -20 13 -25 -30 10 8 10 12 14 16 18 20 22 24 26 28 12 30 14 16 FREQUENCY (GHz) Input Return Loss vs. Temperature 22 24 26 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 20 Output Return Loss vs. Temperature 0 -10 -15 -20 -25 +25 C +85 C -40 C -10 -15 -20 -25 -30 -30 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 18 20 22 24 26 24 26 FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature 10 24 22 +25 C +85 C -40 C 8 20 6 IP3 (dBm) NOISE FIGURE (dB) 18 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT 28 25 4 18 16 14 2 +25 C +85 C -40 C 12 0 10 12 14 16 18 20 FREQUENCY (GHz) 22 24 26 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC342LC4 v04.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz 14 12 12 10 10 Psat (dBm) P1dB (dBm) Psat vs. Temperature 14 8 6 8 6 +25 C +85 C +25 C +85 C -40 C 4 4 2 -40 C 2 0 0 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 0 19 -10 ISOLATION (dB) Pout Gain PAE 9 4 -1 -6 -26 20 22 24 26 Reverse Isolation vs. Temperature 24 14 18 FREQUENCY (GHz) Power Compression @ 20 GHz Pout (dBm), GAIN (dB), PAE (%) LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature +25 C +85 C -40 C -20 -30 -40 -50 -60 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 12 14 16 INPUT POWER (dBm) 18 20 22 24 26 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB) Gain, Power & Noise Figure vs. Supply Voltage @ 20 GHz 3 24 20 16 Gain P1dB Psat Noise Figure 12 8 4 0 2.7 3 3.3 Vdd Supply Voltage (Vdc) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC342LC4 v04.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Drain Bias Voltage (Vdd) +5.5 Vdc RF Input Power (RFIN)(Vdd = +3.0 Vdc) 0 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 3.62 mW/°C above 85 °C) 0.326 W Thermal Resistance (channel to ground paddle) 276 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vdd (Vdc) Idd (mA) +2.7 42 +3.0 43 +3.3 44 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LOW NOISE AMPLIFIERS - SMT Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC342LC4 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H342 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC342LC4 v04.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz Pin Descriptions LOW NOISE AMPLIFIERS - SMT Pin Number 5 Function Description N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2, 4, 15, 17 GND Package base has an exposed metal ground that must also be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 21 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 µF are required. 1, 5 - 14, 18 - 20, 22 - 24 Interface Schematic Application Circuit Component Value C1 100 pF C2 1,000 pF C3 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC342LC4 v04.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 110209 Item Description J1, J2 2.92 mm PC mount K-connector J3, J4 DC Pin C1 100 pF capacitor, 0402 Pkg.. C2 1,000 pF Capacitor, 0603 Pkg.. C3 2.2µF Capacitor, Tantalum U1 HMC342LC4 Amplifier PCB [2] 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6