WILLAS FM120-M+ THRU BAS20H FM1200-M 200mA Surface Mount Switching Diode-200V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Produc SOD-123+ PACKAGE Package outline Features High Voltage better reverse leakage current and thermal resistance. • Batch process design, excellent power dissipation offers SOD-123H • Low profile surface mounted application in order to optimize board space. Switching efficiency. • Low power loss, highDiode 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. • High surge capability. z• Guardring We declare that the material of product for overvoltage protection. high-speed switching. • Ultra compliance with RoHS requirements. • Silicon epitaxial planar chip, metal silicon junction. Pb-Freeparts package is available standards of meet environmental • Lead-free MIL-STD-19500 RoHS product/228 for packing code suffix ”G” • RoHS product for packing code suffix "G" Halogen free product for packing code suffix “H” 0.071(1.8) 0.056(1.4) SOD– 323 Halogen free product for packing code suffix "H" Moisture Sensitivity z Mechanical data Level 1 z Polarity: Color band denotes cathode end 1 CATHODE • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 2 ANODE 0.031(0.8) Typ. 2026 OrderingMethod Information • Polarity : Indicated by cathode band Device Marking • Mounting Position : Any BAS20H JR gram • Weight : Approximated 0.011 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) Shipping 3000/Tape&Reel MAXIMUM RATINGS RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM Ratings at 25℃ Rating ambient temperature unless otherwise specified. Symbol Single phase half wave, 60Hz, resistive Continuous Reverse Voltage of inductive load. VR For capacitive derate current by 20% Peakload, Forward Current IF Peak Forward Surge Current RATINGS Value Unit 200 Vdc 200 mAdc 625 mAdc FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH FM140-MH FM150-MH SYMBOL IFM(surge) FM120-MH FM130-MH Marking Code Maximum RecurrentCHARACTERISTICS Peak Reverse Voltage THERMAL Maximum RMS Voltage Characteristic VRRM VRMS 12 20 13 30 14 Symbol PD20 14 40 15 50 16 60 18 80 28 Max 30 200 40 35 Unit 50mW 42 60 mW/°C °C/W °C 21 Maximum DC Blocking Total DeviceVoltage Dissipation FR–5 Board,* VDC Maximum Average Forward Rectified Current TA = 25°C IO IFSM RθJA 1.57 635 RΘJA TJ, Tstg –55 to+150 Derate above 25°C Peak Forward Surge Current 8.3 ms single half sine-wave Thermal Resistance Junction to Ambient superimposed on rated load (JEDEC method) Junction and Storage Typical Thermal Resistance (Note 2) Temperature Range Typical Junction Capacitance (Note 1) *FR–5 Minimum Pad Operating Temperature Range CJ TJ Characteristic CHARACTERISTICS OFF CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Current Reverse Voltage Leakage Symbol VF (VR = 200 Vdc, T J = 150°C) @T A=125℃ Rated DC Blocking Voltage NOTES: Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) VF 2012-06 2012-1 IR V(BR) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR Reverse Breakdown Voltage (IBR = 100 µAdc) 2- Thermal Resistance From Junction to Ambient 120 200 56 70 105 140 80 100 150 200 40 120 -55 to +150 Min - 65 to +175 Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average (VR = Reverse 200 Vdc)Current at @T A=25℃ 115 150 1.0 30 -55 to +125 CHARACTERISTICS (TA = 25°C StorageELECTRICAL Temperature Range TSTG unless otherwise noted) 10 100 0.50 0.70 – – 200 µAdc0.85 1.0 0.5 100 10 – 0.9 0.92 Vdc mV CD – – – 1000 1250 5.0 pF trr – 50 ns WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS20H FM1200-M+ 200mA Surface Mount Switching Diode-200V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers 820 Ω better reverse leakage current and thermal resistance. surface mounted application in order to • Low profile 2.0 k +10 V 0.1 µF tp tr IF t SOD-123H optimize boardIFspace. 100 µH 10% loss, high efficiency. • Low0.1power µF • High current capability, low forward voltage drop. D.U.T. • High surge capability. 50 Ω Input 50 Ω Output Pulse protection. • Guardring for overvoltage Sampling 90% Generator Oscilloscope • Ultra high-speed switching. IR • Silicon epitaxial planar chip, metal silicon junction. VR INPUT SIGNAL • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Notes: 1. Acode 2.0 kΩ variable packing suffix "G" resistor adjusted for a Forward Current (IF) of 30 mA. • RoHS product for Notes: for2.packing Input pulse adjusted Halogen free product codeissuffix "H" so IR(peak) is equal to 30 mA. Notes : 3. tp » trr Mechanical data 0.146(3.7) 0.130(3.3) t rr t 0.012(0.3) Typ. iR(REC) = 3.0 mA 0.071(1.8) 0.056(1.4) OUTPUT PULSE (IF = IR = 30 mA; MEASURED at i R(REC) = 3.0 mA) 0.040(1.0) 0.024(0.6) Figure 1. Recovery Time Equivalent Test Circuit retardant • Epoxy : UL94-V0 rated flame • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 100 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any 100 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 10 25℃ ambient temperature unless otherwise specified. Ratings at Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 1.0 0 0.2 0.4 Maximum DC Blocking Voltage VRRM 0.6 0.8 VRMS 1.0 1.2 VDC VF, FORWARD VOLTAGE (V) Figure 2. Forward Current Peak Forward Surge Current 8.3 ms single half sine-wave 1.8 f = 1 MHz TJ Storage Temperature Range 1.4 IE = 0 A TSTG TA = 25°C CT, TOTAL CAPACITANCE (pF) Operating1.6 Temperature Range CHARACTERISTICS @T A=125℃ IR 0.4 0.2 2- Thermal Resistance From Junction to Ambient 35 42 56 100 150 10 100 70 200 250 140 150 200 -55 to +150 2.9 105 40 120 3.0 120 200 300 50 60 80 100 VR, REVERSE VOLTAGE (V) 1.0 Figure 3. Leakage Current 30 3.1 115 150 - 65 to +175 2.8 0.70 2.6 0.9 0.85 0.92 0.5 10 2.5 2.4 2.3 2.2 0 0 2012-06 2012-1 50 40 18 80 0.50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 28 0 16 60 -55 to +125 VF Maximum 0.8 Average Reverse Current at @T A=25℃ 0.6 30 15 50 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH 2.7 Maximum 1.0 Forward Voltage at 1.0A DC Rated DC Blocking Voltage 0.001 21 20 CJ Typical Junction Capacitance (Note 1) 1.2 14 14 40 RΘJA Typical Thermal Resistance (Note 2) 13 30 IFSM superimposed on rated load (JEDEC method) 2.0 1.4 0.01 12 20 IO Maximum Average Forward Rectified Current 0.1 VF, FORWARD VOLTAGE (V) Maximum0.1 RMS Voltage NOTES: 1.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage 10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code IR, REVERSE CURRENT (µ A) IF, FORWARD CURRENT (mA) 1000 0.031(0.8) Typ. 5.0 10 15 20 25 30 35 0 25 50 75 100 125 150 175 200 VR, REVERSE VOLTAGE (V) IF, FORWARD CURRENT (mA) Figure 4. Total Capacitance Figure 5. Forward Voltage 225 250 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS20H FM1200-M+ 200mA Surface Mount Switching Diode-200V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPackage RECTIFIERS -20V- 200V SOD-323 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H to • Low profile surface mounted application in order SOD−323 optimize board space. 0.146(3.7) 0.130(3.3) .045(1.15) .057(1.45) .010(0.25) • .016(0.40) • Low power loss, high efficiency. .106(2.70) • High current capability, low forward voltage drop. • High surge capability. .091(2.30) • Guardring for overvoltage protection. • Ultra high-speed switching. .075(1.90) • Silicon epitaxial planar chip, metal silicon junction. .059(1.50) standards of • Lead-free parts meet environmental 0.012(0.3) Typ. .043(1.10) 0.071(1.8) 0.056(1.4) .031(0.80) MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. .004(0.10)MAX. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .008(0.20) .004(0.10) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volt VRMS 12 13 .016(0.40) 20 30 .010(0.25) 14 21 28 35 42 56 70 105 140 Volt VDC 20 40 50 60 80 100 150 200 Volt Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage Maximum DC Blocking Voltage 30 IO .010(0.25)MIN. 1.0 30 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) 40 120 (millimeters) CJ in inches and Dimensions Typical Junction Capacitance (Note 1) -55 to +125 TJ Operating Temperature Range Storage Temperature Range Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI SOLDERING FOOTPRINT* VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 2012-1 0.9 0.92 10 0.83 0.033 NOTES: 2- Thermal Resistance From Junction to Ambient 0.85 0.5 0.63 0.025 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.70 1.60 0.063 2.85 0.112 WILLAS ELECTRONIC CORP. Volt mAm