RClamp2574NQ High Power TVS for Ethernet Interfaces PROTECTION PRODUCTS - RailClamp® Description Features RailClamp® TVS diodes are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (cable discharge events), and EFT (electrical fast transients). The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. The RClamp®2574NQ is designed to replace up to two components for board level GbE protection. Each device is designed to protect two line pairs. This is accomplished by routing traces through the device. When connected in this fashion, the device can withstand a high level of surge current (40A, 8/20us) while maintaining a low loading capacitance of less than 5pF. The high surge capability means it can be used in high threat environments in applications such as Gigabit Ethernet, telecommunication lines, and LVDS interfaces. The RClamp®2574NQ is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. It features a true operating voltage of 2.5 volts for superior protection. The RClamp2574NQ is in a 10-pin SLP3020N10 package. It measures 3.0 x 2.0 x 0.60mm. The leads are finished with lead-free NiPdAu. RClamp®2574NQ is qualified to AEC-Q100 Grade 1. Transient protection for high-speed data lines to IEC 6 1000-4-2 (ESD) ±30kV (air), ±30kV (contact) 61 IEC 6 61 1000-4-4 (EFT) 40A (5/50ns) IEC 6 1 000-4-5 (Lightning) 40A (8/20µs) 61 Array of surge rated diodes with internal TVS Diode Small package saves board space Protects two line pairs Low capacitance for high-speed interfaces Low variation in capacitance vs. bias voltage Low clamping voltage Qualified to AEC-Q100 Grade1 Solid-state silicon-avalanche technology Mechanical Characteristics SLP3020N10 10L package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 3.0 x 2.0 x 0.60 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking : Marking code + Date code Packaging : Tape and Reel Applications Schematic 10/100/1000 Ethernet Central Office Equipment LVDS Interfaces MagJacks / Integrated Magnetics Notebooks / Desktops / Servers Pin Configuration Pin 1 LINE 1 In Pin 4 LINE 3 In Line 1 In 1 10 Line 1 Out GND Line 2 In Pin 10 LINE 1 Out Pin 7 LINE 3 Out Pin 2 LINE 2 In Pin 5 LINE 4 In Line 2 Out GND GND GND Line 3 In Line 3 Out GND Pin 9 LINE 2 Out Line 4 In Pin 6 LINE 4 Out 5 6 Line 4 Out Center Tabs and Pins 3, 8 Revision 11/11/2011 1 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Absolute Maximum Absolute Maximum RatingsRating R ating Symbol Value Units Peak Pulse Power (tp = 8/20µs)1 Pp k 1000 Watts Peak Pulse Current (tp = 8/20µs)1 IP P 40 A VESD +/-30 +/-30 kV TJ -40 to +125 °C TSTG -55 to +150 °C ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Reverse Stand-Off Voltage Conditions Minimum Typical VRWM Maximum Units 2.5 V Punch-Through Voltage V PT IPT = 2µA 2.7 V Snap-Back Voltage VSB ISB = 50mA 2.0 V Reverse Leakage Current IR VRWM = 2.5V T=25OC 0.02 0.1 T=125OC 0.03 0.5 µA Clamping Voltage VC IPP = 1A, tp = 8/20µs Any I/O to Ground 4.5 V Clamping Voltage2 VC IPP = 10A, tp = 8/20µs Any 1 I/O to Ground 7.5 V Clamping Voltage2 VC IPP = 25A, tp = 8/20µs Any I/O to Ground 12 V Clamping Voltage1,2 VC IPP = 40A, tp = 8/20µs Line-to-Line, two I/O pins connected together on each line (N ote 1) 20 V Junction Capacitance 2 Cj VR = 0V, f = 1MHz Any I/O to Ground VR = 0V, f = 1MHz Between I/O pins T=25OC 3.75 5 T=125OC 7 12 1.7 pF pF Notes: 1) Ratings with 2 pins connected together per the recommended configuration (ie pin 1 connected to pin 10, pin 2 connected to pin 9, pin 4 connected to pin 7, and pin 5 connected to pin 6). 2) Guaranteed by design (not production tested) © 2011 Semtech Corp. 2 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 120 100 % Rated Power or IPP (%) Peak Pulse Power - P PP (kW) 10 1 80 60 40 20 0 0.1 0.1 1 10 Pulse Duration - tp (µs) 100 0 1000 Typical Clamping Voltage vs. Peak Pulse Current 125 150 5 O TA=25 C f = 1 MHz TA=25OC Waveform Parameters: tr = 8µs; td = 20µs 15 4 Capacitance - Cj(pf) Clamping Voltage -VC (V) 50 75 100 Ambient Temperature TA (OC) Typical Capacitance vs. Reverse Voltage 20 Line to Line Line to GND 10 5 Line to Line Line to GND 3 2 1 0 0 0 5 10 15 20 Peak Pulse Current - IPP (A) 25 0.0 30 Typical Clamping Voltage vs. Peak Pulse Current Forward 1.0 1.5 Reverse Voltage - VR(V) 50 TA=25OC Gnd to Line. Waveform Parameters: tr = 8µs; td = 20µs 2.0 2.5 TA = 25OC. Waveform 1ns/60ns; 8kV peak. Corrected for 20dB attenuation. Measured with 50Ω 20dB attenuator; 50Ω Scope Input Impedance. 40 Voltage (V) 12 0.5 Typical 1ns/60ns 8kV ESD Surge Waveform 16 Forward Voltage - VF (V) 25 8 30 20 4 10 0 0 0 5 © 2011 Semtech Corp. 10 15 20 Peak Pulse Current (A) 25 30 0 20 40 60 80 100 Time (ns) 3 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Typical Characteristics Insertion Loss S21 (I/O to I/O) CH1 S21 LOG Typical Crosstalk 6 dB / REF 0 dB CH1 S21 LOG 20dB / REF 0 dB 1: - 0.40100dB 800 MHz 2: - 0.50480 dB 900 MHz 0 dB 0 dB 12 -6 dB 3: - 4.2120 dB 1.8 GHz 3 -20 dB 5 -12 dB 4 -18 dB 4: - 12.637 dB 2.5 GHz -40 dB -24 dB -60 dB -30 dB -80 dB -36 dB -100 dB -42 dB -120 dB -48 dB 1 MHz 10 MHz 100 MHz 3 1 GHz GHz -140 dB STOP 3000. 000000 MHz START . 030 MHz -160 dB STOP 3000. 000000 MHz START . 030 MHz Typical Leakage Current vs Temperature Typical Snap Back Voltage vs Temperature 5 50 Line to Line Line to GND 40 Snap Back Voltage (VSB) (V) Reverse Leakage Current (nA) VR = 2.5V 30 20 10 4 3 2 Line to Line Line to GND 1 ISB = 50mA 0 0 -50 0 50 100 150 -50 0 Temperature (OC) 100 150 O Typical Capacitance vs Temperature Typical Punch Through Voltage vs Temperature 6 10 VR=0 f=1Mhz Line to GND Punch Thru Voltage (V) 8 Capacitance (pF) 50 Temperature ( C) 6 4 4 2 VPT (V) LG VPT (V) LL 2 IPT=2uA 0 0 -50 0 50 100 150 -50 O Temperature ( C) © 2011 Semtech Corp. 4 0 50 Temperature (OC) 100 150 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Applications Information Applications Information Pin Configuration Device Connection Options for Protection of Four High-Speed Data Lines This device is designed to protect four high-speed data lines (two line pairs). It has been optimized for use on Ethernet interfaces where large magnitude lightning and ESD surges are expected. The RClamp2574NQ is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low stand-off (turn-on) voltages with significant reductions while maintaining good clamping characteristics and high surge capability. They feature a true operating voltage of 2.5 volts. Each I/O pin pair features a low capacitance steering diode bridge that is designed to route harmful surge current into the internal low voltage TVS diode. Each data pair is rated to withstand 1000 Watts of surge power (8/20us impulse waveform). When placed on the PHY side of the magnetics, it can be used to meet the requirements of Telcordia GR-1089, K.20, K.21, and other high energy surge standards. The RClamp2574NQ is designed with a flow through pin configuration for easy layout. In a GbE application, TX+ and TX- lines would enter at pins 1, 2, 4, and 5 and exit at pins 10, 9, 7, and 6 respectively. The traces should be unbroken and run under the device as shown. Pins 3 and 8 are electrically connected to the three center ground tabs. In a typical Ethernet application, these pins as well as the tabs should be left floating (i.e. not connected to ground). © 2011 Semtech Corp. Tx1+ In 1 10 Tx1+ Out GND Tx1- In Tx1- Out GND GND GND Tx2+ In Tx2+ Out GND Tx2- In 5 6 Tx2- Out Layout Example 5 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Applications Information duration of the surge is attenuated by the inductance of the magnetics. The amount of attenuation will vary by vendor and configuration of the magnetics. It is this transferred energy that must be clamped by the protection circuitry. Gigabit Ethernet Protection Solutions Ethernet systems with connections external to the building are subject to high-level transient threats. This type of equipment may even be required to meet the surge immunity requirements of Telcordia GR1089. Reliable protection of the Ethernet transceiver requires a device that can absorb the expected transient energy, clamp the incoming surge to a safe level, and yet remain transparent to the system under normal operation. The RClamp2574NQ has been designed to meet these demanding requirements. A typical protection scheme which utilizes the RClamp2574NQ is shown in Figure 1. One device is placed across two line pairs and is located on the PHY side of the transformer as close to the magnetics as possible. This is done to minimize parasitic inductance and improve clamping performance. In this design, the isolation voltage of the transformer is relied upon to suppress common mode lightning surges. High voltage capacitors and resistors are commonly utilized from the center tap to ground to aid in transient protection. Metallic surges will be transferred in some form to the PHY side and clamped by the RClamp2574NQ. The RClamp2574NQ will turn on when the voltage across it exceeds the punch-through voltage of the device. Low voltage turn on is important since many PHY chips have integrated ESD protection structures. These structures are for protection of the device during manufacture and are not designed to handle large amounts of energy. Should they turn on before the external protection, they can be damaged resulting in failure of the PHY chip. Transient Protection When designing Ethernet protection, the entire system must be considered. An Ethernet port includes interface magnetics in the form of transformers and common mode chokes. Transformers and chokes can be discrete components, but integrated solutions that include the RJ-45 connector, resistors, capacitors, and protection are also available. In either case, the transformer will provide a high level of common mode isolation to external voltages, but no protection for metallic (line-to-line) surges. During a metallic transient event, current will flow into one line, through the transformer and back to the source. As the current flows, it charges the windings of the transformer on the line side. Once the surge is removed, the windings on the line side will stop charging and will transfer its stored energy to the IC side where the PHY IC is located. The magnitude and RClamp2574NQ TP1+ RJ-45 Connector TP11 TP2+ 2 3 TP2- 4 5 RClamp2574NQ TP3+ 6 7 GbE Ethernet PHY TP3- 8 TP4+ TP4- Figure 1 - GbE Protection to Lightning, ESD, and CDE © 2011 Semtech Corp. 6 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Outline Drawing - SLP3020N10 A D B DIMENSIONS DIM PIN 1 INDICATOR (LASER MARK) A A1 A2 b b1 D E e e1 e2 L L1 N aaa bbb E A SEATING PLANE aaa C C A1 A2 MILLIMETERS MIN NOM MAX 0.50 0.60 0.65 0.00 0.03 0.05 (0.15) 0.15 0.20 0.25 0.25 0.35 0.45 2.90 3.00 3.10 1.90 2.00 2.10 0.60 BSC 0.65 BSC 0.95 BSC 0.25 0.30 0.35 0.95 1.00 1.05 10 0.08 0.10 D/2 3X b1 1 2 LxN 3X L1 L1 /2 E/2 N bxN e bbb C A B e1 e2 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP3020N10 P1 X1 P DIMENSIONS 0.50 (C) Y1 G Y Z DIM C G P P1 P2 X X1 Y Y1 Z MILLIMETERS (1.98) 1.40 0.60 0.65 0.95 0.25 0.40 0.58 1.00 2.56 P2 X NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. © 2011 Semtech Corp. 7 www.semtech.com RClamp2574NQ PROTECTION PRODUCTS Marking Ordering Information 2574N YYWW Part Number Working Voltage Qty per Reel R eel Size RClamp 2574N Q.TCT 2.5 Volts 3,000 7 Inch RailClamp and RClamp are trademarks of Semtech Corporation 1 Change YYWW = Date Code Tape and Reel Specification 2574N YYWW 2574N YYWW 2574N YYWW Pin 1 Location (Towards Sprocket Holes) User Direction of feed A0 2.24 +/-0.05 mm Tape Width 8 mm B0 K0 3.23 +/-0.05 mm B, (Max) D 4.2 mm 1.5 + 0.1 mm - 0.0 mm ) 0.93 +/-0.05 mm D1 E 0.5 mm ±0.05 1.750±.10 mm F 3.5±0.05 mm K (MAX) P P0 P2 2.4 mm 4.0±0.1 mm 4.0±0.1 mm 2.0±0.05 mm T(MAX) 0.4 mm W 8.0 mm + 0.3 mm - 0.1 mm Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2011 Semtech Corp. 8 www.semtech.com