RClamp2574N

RClamp2574N
High Power TVS for
Ethernet Interfaces
PROTECTION PRODUCTS - RailClamp®
Description
Features
RailClamp TVS diodes are specifically designed to
protect sensitive components which are connected to
high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE
(cable discharge events), and EFT (electrical fast
transients).
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. The RClamp®2574N is designed to
replace up to two components for board level GbE
protection. Each device is designed to protect two line
pairs. This is accomplished by routing traces through
the device. When connected in this fashion, the device
can withstand a high level of surge current (40A, 8/
20us) while maintaining a low loading capacitance of
less than 5pF. The high surge capability means it can
be used in high threat environments in applications
such as Gigabit Ethernet, telecommunication lines, and
LVDS interfaces.
The RClamp®2574N is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low stand-off voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. It features a true operating voltage of 2.5 volts for superior protection.
The RClamp2574N is in a 10-pin SLP3020N10 package. It measures 3.0 x 2.0 x 0.60mm. The leads are
finished with lead-free NiPdAu.
‹ Transient protection for high-speed data lines to
®
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IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 40A (8/20μs)
Array of surge rated diodes with internal TVS Diode
Small package saves board space
Protects two line pairs
Low capacitance for high-speed interfaces
Low variation in capacitance vs. bias voltage
Low clamping voltage
Low operating voltage: 2.5V
Solid-state silicon-avalanche technology
Mechanical Characteristics
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SLP3020N10 10L package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 3.0 x 2.0 x 0.60 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code + Date code
Packaging : Tape and Reel
Applications
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Schematic
10/100/1000 Ethernet
Central Office Equipment
LVDS Interfaces
MagJacks / Integrated Magnetics
Notebooks / Desktops / Servers
Pin Configuration
Pin 1
LINE 1 In
Pin 4
LINE 3 In
Line 1 In 1
10
Line 1 Out
GND
Line 2 In
Pin 10
LINE 1 Out
Pin 7
LINE 3 Out
Pin 2
LINE 2 In
Pin 5
LINE 4 In
GND
Line 2 Out
GND
GND
Line 3 In
Line 3 Out
GND
Line 4 In 5
Center Tabs
and Pins 3, 8
Revision 10/20/2010
6
Line 4 Out
Pin 6
LINE 4 Out
Pin 9
LINE 2 Out
Top View
1
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RClamp2574N
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20μs)1
Pp k
1000
Watts
Peak Pulse Current (tp = 8/20μs)1
IP P
40
A
VESD
+/-30
+/-30
kV
TJ
-55 to +85
°C
TSTG
-55 to +150
°C
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
Op erating Temp erature
Storage Temp erature
Electrical Characteristics (T=25oC)
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
Typical
VRWM
Maximum
Units
2.5
V
Punch-Through Voltage
V PT
IPT = 2μA
2.7
V
Snap-Back Voltage
VSB
ISB = 50mA
2.0
V
Reverse Leakage Current
IR
VRWM = 2.5V, T=25°C
0.5
μA
Clamping Voltage
VC
IPP = 1A, tp = 8/20μs
Any I/O to Ground
4.5
V
Clamping Voltage2
VC
IPP = 10A, tp = 8/20μs
Any 1 I/O to Ground
7.5
V
Clamping Voltage2
VC
IPP = 25A, tp = 8/20μs
Any I/O to Ground
12
V
Clamping Voltage1,2
VC
IPP = 40A, tp = 8/20μs
Line-to-Line, two I/O pins
connected together on each
line (N ote 1)
20
V
Junction Capacitance2
Cj
VR = 0V, f = 1MHz
Any I/O to Ground
3.75
5
pF
VR = 0V, f = 1MHz
Between I/O pins
1.7
pF
Notes:
1) Ratings with 2 pins connected together per the recommended configuration (ie pin 1 connected to pin 10, pin 2 connected to pin 9, pin 4
connected to pin 7, and pin 5 connected to pin 6).
2) Guaranteed by design (not production tested)
© 2010 Semtech Corp.
2
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RClamp2574N
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
120
10
% of Rated Power or IPP
Peak Pulse Power - PPP (kW)
100
1
80
60
40
20
0
0.1
0.1
1
10
100
0
1000
25
80
8
Clamping Voltage -VC (V)
90
Percent of I PP
9
Waveform
Parameters:
tr = 8µs
td = 20µs
100
e
-t
50
40
100
Clamping Voltage vs. Peak Pulse Current
Any I/O to GND (tp = 8/20us)
110
60
75
Ambient Temperature - TA ( C)
Surge Current Output Waveform
(tp = 8/20us)
70
50
o
Pulse Duration - tp (us)
td = IPP/2
30
20
7
6
5
4
3
Waveform
Parameters:
tr = 8µs
td = 20µs
2
1
10
0
0
0
5
10
15
20
25
0
30
5
10
15
20
25
30
Peak Pulse Current - IPP (A)
Time (µs)
Clamping Voltage vs. Peak Pulse Current
Line-to-Line, two I/O pins connected together on
each line (tp = 8/20us)
Normalized Capacitance vs. Reverse Voltage
1.5
24
1.4
1.3
1.2
Cj(VR) / Cj(VR=0V)
Clamping Voltage -Vc (V)
19
14
9
1.1
1
0.9
0.8
Waveform
Parameters:
tr = 8µs
td = 20µs
4
-1
0.7
0.6
f = 1 MHz
0.5
0
10
20
30
40
50
0
© 2010 Semtech Corp.
0.5
1
1.5
2
2.5
Reverse Voltage (VR)
Peak Pulse Current - Ipp (A)
3
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RClamp2574N
PROTECTION PRODUCTS
Typical Characteristics
Insertion Loss S21 (I/O to Gnd)
CH1 S21
LOG
Insertion Loss S21 (I/O to I/O)
6 dB / REF 0 dB
CH1 S21
LOG
6 dB / REF 0 dB
1: - 1.7540 dB
800 MHz
1: - 0.40100dB
800 MHz
2: - 2.2058 dB
900 MHz
0 dB
2: - 0.50480 dB
900 MHz
0 dB
12
1
-6 dB
2
5
3: - 14.205 dB
1.8 GHz
-6 dB
-12 dB
3
-18 dB
5
-12 dB
4: - 7.8864 dB
2.5 GHz
4
-18 dB
-24 dB
-24 dB
-30 dB
-30 dB
-36 dB
-36 dB
-42 dB
-42 dB
-48 dB
1
MHz
10
MHz
100
MHz
START . 030 MHz
3: - 4.2120 dB
1.8 GHz
3
4
-48 dB
3
1
GHz GHz
STOP 3000. 000000 MHz
1
MHz
START . 030 MHz
ESD Clamping - I/O to Gnd
(8kV Contact per IEC 61000-4-2)
10
MHz
100
MHz
4: - 12.637 dB
2.5 GHz
3
1
GHz GHz
STOP 3000. 000000 MHz
ESD Clamping - I/O to Gnd
(30kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
© 2010 Semtech Corp.
4
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RClamp2574N
PROTECTION PRODUCTS
Pin Configuration
Device Connection Options for Protection of Four
High-Speed Data Lines
This device is designed to protect four high-speed data
lines (two line pairs). It has been optimized for use on
Ethernet interfaces where large magnitude lightning
and ESD surges are expected. The RClamp2574N is
constructed using Semtech’s proprietary EPD process
technology. The EPD process provides low stand-off
(turn-on) voltages with significant reductions while
maintaining good clamping characteristics and high
surge capability. They feature a true operating voltage
of 2.5 volts. Each I/O pin pair features a low
capacitance steering diode bridge that is designed to
route harmful surge current into the internal low
voltage TVS diode. Each data pair is rated to
withstand 1000 Watts of surge power (8/20us impulse
waveform). When placed on the PHY side of the
magnetics, it can be used to meet the requirements of
Telcordia GR-1089, K.20, K.21, and other high energy
surge standards.
The RClamp2574N is designed with a flow through pin
configuration for easy layout. In a GbE application, TX+
and TX- lines would enter at pins 1, 2, 4, and 5 and exit
at pins 10, 9, 7, and 6 respectively. The traces should
be unbroken and run under the device as shown. Pins
3 and 8 are electrically connected to the three center
ground tabs. In a typical Ethernet application, these
pins as well as the tabs should be left floating (i.e. not
connected to ground).
© 2010 Semtech Corp.
Tx1+ In
1
10
Tx1+ Out
GND
Tx1- In
Tx1- Out
GND
GND
GND
Tx2+ In
Tx2+ Out
GND
Tx2- In
5
6
Tx2- Out
Layout Example
5
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RClamp2574N
PROTECTION PRODUCTS
Applications Information
duration of the surge is attenuated by the inductance
of the magnetics. The amount of attenuation will vary
by vendor and configuration of the magnetics. It is
this transferred energy that must be clamped by the
protection circuitry.
Gigabit Ethernet Protection Solutions
Ethernet systems with connections external to the
building are subject to high-level transient threats.
This type of equipment may even be required to meet
the surge immunity requirements of Telcordia GR1089. Reliable protection of the Ethernet transceiver
requires a device that can absorb the expected
transient energy, clamp the incoming surge to a safe
level, and yet remain transparent to the system under
normal operation. The RClamp2574N has been
designed to meet these demanding requirements.
A typical protection scheme which utilizes the
RClamp2574N is shown in Figure 1. One device is
placed across two line pairs and is located on the PHY
side of the transformer as close to the magnetics as
possible. This is done to minimize parasitic inductance
and improve clamping performance. In this design, the
isolation voltage of the transformer is relied upon to
suppress common mode lightning surges. High voltage
capacitors and resistors are commonly utilized from
the center tap to ground to aid in transient protection.
Metallic surges will be transferred in some form to the
PHY side and clamped by the RClamp2574N. The
RClamp2574N will turn on when the voltage across it
exceeds the punch-through voltage of the device. Low
voltage turn on is important since many PHY chips
have integrated ESD protection structures. These
structures are for protection of the device during
manufacture and are not designed to handle large
amounts of energy. Should they turn on before the
external protection, they can be damaged resulting in
failure of the PHY chip.
Transient Protection
When designing Ethernet protection, the entire system
must be considered. An Ethernet port includes
interface magnetics in the form of transformers and
common mode chokes. Transformers and chokes can
be discrete components, but integrated solutions that
include the RJ-45 connector, resistors, capacitors, and
protection are also available. In either case, the
transformer will provide a high level of common mode
isolation to external voltages, but no protection for
metallic (line-to-line) surges. During a metallic
transient event, current will flow into one line, through
the transformer and back to the source. As the
current flows, it charges the windings of the
transformer on the line side. Once the surge is
removed, the windings on the line side will stop
charging and will transfer its stored energy to the IC
side where the PHY IC is located. The magnitude and
RClamp2574N
TP1+
RJ-45
Connector
TP1TP2+
1
2
TP2-
3
4
TP3+
5
GbE
Ethernet
PHY
6
7
TP3-
8
TP4+
TP4-
RClamp2574N
Figure 1 - GbE Protection to Lightning, ESD, and CDE
© 2010 Semtech Corp.
6
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RClamp2574N
PROTECTION PRODUCTS
Outline Drawing - SLP3020N10
A
D
B
DIMENSIONS
DIM
PIN 1
INDICATOR
(LASER MARK)
A
A1
A2
b
b1
D
E
e
e1
e2
L
L1
N
aaa
bbb
E
A
SEATING
PLANE
aaa C
C
A1
A2
MILLIMETERS
MIN NOM MAX
0.50 0.60 0.65
0.00 0.03 0.05
(0.15)
0.15 0.20 0.25
0.25 0.35 0.45
2.90 3.00 3.10
1.90 2.00 2.10
0.60 BSC
0.65 BSC
0.95 BSC
0.25 0.30 0.35
0.95 1.00 1.05
10
0.08
0.10
D/2
3X b1
1
2
LxN
3X L1
L1 /2
E/2
N
e
bxN
bbb
C A B
e1
e2
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
Land Pattern - SLP3020N10
P1
P
X1
0.50
(C)
Y1 G
Y
Z
DIM
C
G
P
P1
P2
X
X1
Y
Y1
Z
DIMENSIONS
MILLIMETERS
(1.98)
1.40
0.60
0.65
0.95
0.25
0.40
0.58
1.00
2.56
P2
X
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
© 2010 Semtech Corp.
7
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RClamp2574N
PROTECTION PRODUCTS
Marking
Ordering Information
2574N
YYWW
Part Number
Working
Voltage
Qty per
Reel
R eel Size
RClamp 2574N .TCT
2.5 Volts
3,000
7 Inch
RailClamp and RClamp are trademarks of Semtech Corporation
1
YYWW = Date Code
Tape and Reel Specification
2574N
YYWW
2574N
YYWW
2574N
YYWW
Pin 1 Location (Towards Sprocket Holes)
User Direction of feed
Device Orientation in Tape
A0
2.24 +/-0.05 mm
B0
K0
3.23 +/-0.05 mm
Tap e
Width
B, (Max)
D
8 mm
4.2 mm
1.5 + 0.1 mm
- 0.0 mm )
0.93 +/-0.05 mm
D1
E
0.5 mm
±0.05
1.750±.10
mm
F
K
(MAX)
P
P0
P2
T(MAX)
3.5±0.05
mm
2.4 mm
4.0±0.1
mm
4.0±0.1
mm
2.0±0.05
mm
0.4 mm
W
8.0 mm
+ 0.3 mm
- 0.1 mm
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
© 2010 Semtech Corp.
8
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