Si1073X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 251.5622 N/A N/A RT2 12.2003 N/A N/A RT3 137.2931 N/A N/A RT4 248.9444 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 16.7185 m N/A N/A CT2 2.9667 m N/A N/A CT3 1.0209 N/A N/A CT4 60.2440 m N/A N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70334 Revision: 21-Jun-07 www.vishay.com 1 Si1073X_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 33.5335 N/A N/A RF2 241.1334 N/A N/A RF3 246.3569 N/A N/A RF4 128.9762 N/A N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 4.3806 m N/A N/A CF2 8.4403 m N/A N/A CF3 15.1428 m N/A N/A CF4 911.7114 m N/A N/A Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 70334 Revision: 21-Jun-07 Si1073X_RC Vishay Siliconix Document Number: 70334 Revision: 21-Jun-07 www.vishay.com 3