Si1073X Datasheet

Si1073X
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
ID (A)
0.173 at VGS = - 10 V
- 0.98a
0.243 at VGS = - 4.5 V
- 0.83
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
3.25
APPLICATIONS
• Load Switch
SC-89 (6-LEADS)
S
1
6
D
D
2
5
D
G
3
4
S
Marking Code
1
XX
YY
D
G
Lot Traceability
and Date Code
Part # Code
Top View
D
P-Channel MOSFET
Ordering Information: Si1073X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
L = 0.1 mH
TA = 25 °C
TA = 25 °C
TA = 70 °C
- 0.78b, c
A
-8
IAS
-6
EAS
1.8
mJ
b, c
IS
A
0.2
0.236b, c
PD
W
0.151b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 0.98b, c
ID
IDM
Pulsed Drain Current
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 74285
S10-2542-Rev. D, 08-Nov-10
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1
Si1073X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 30.7
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-3
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
- 10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductance
RDS(on)
gfs
VDS =  5 V, VGS = - 10 V
3.78
-1
-8
µA
A
VGS = - 10 V, ID = - 0.98 A
0.144
0.173
VGS = - 4.5 V, ID = - 0.83 A
0.202
0.243
VDS = - 15 V, ID = - 0.98 A
3.52

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
265
VDS = - 15 V, VGS = 0 V, f = 1 MHz
51
VDS = - 15 V, VGS = - 4.5 V, ID = - 0.98 A
3.25
4.88
6.3
9.45
39
VDS = - 15 V, VGS = - 10 V, ID = - 0.98 A
td(off)
1.02
nC
1.47
f = 1 MHz
td(on)
tr
pF
VDD = - 15 V, RL = 19.2 
ID  - 0.78 A, VGEN = - 10 V, Rg = 1 
14
21
6
9
10
15

14
21
tf
6
9
td(on)
26
39
28
42
28
42
12
18
0.8
1.2
V
14.3
21.45
nC
12.16
18.25
tr
td(off)
VDD = - 15 V, RL = 22.72 
ID  - 0.66 A, VGEN = - 4.5 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
8
IS = - 0.63 A
IF = - 0.7 A, dI/dt = 100 A/µs
11.1
A
ns
3.2
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74285
S10-2542-Rev. D, 08-Nov-10
Si1073X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
3
TC = 125 °C
25 °C
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 V thru 5 V
6
VGS = 4 V
4
2
1
2
VGS = 3 V
0
0.0
TC = - 55 °C
0
0.6
1.2
1.8
2.4
3.0
0
1
VDS - Drain-to-Source Voltage (V)
3
4
Transfer Characteristics Curves vs. Temp.
0.40
500
0.32
400
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Output Characteristics
0.24
VGS = 4.5 V
0.16
300
Ciss
200
Coss
VGS = 10 V
0.08
2
VGS - Gate-to-Source Voltage (V)
100
Crss
0.00
0
0
2
4
6
8
0
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
30
1.6
ID = 0.94 A
8
VGS = 10 V
ID = 0.94 A
1.4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
VDS = 15 V
6
VDS = 24 V
4
2
1.2
VGS = 4.5 V
ID = 0.83 A
1.0
0.8
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74285
S10-2542-Rev. D, 08-Nov-10
6
7
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1073X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.24
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 0.94 A
1
TJ = 25 °C
TJ = 150 °C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.20
T A = 125 °C
0.16
0.12
T A = 25 °C
0.08
1.4
0
VSD - Source-to-Drain Voltage (V)
2.4
10
2.2
8
2.0
ID = 250 µA
1.8
6
4
2
1.6
1.4
- 50
10
RDS(on) vs. VGS vs. Temperature
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
10
100 µs
I D - Drain Current (A)
Limited by R DS(on)*
1 ms
1
10 ms
100 ms
0.1
1s
10 s
0.01
DC
TA = 25 °C
Single Pulse
0.001
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74285
S10-2542-Rev. D, 08-Nov-10
Si1073X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
0.01
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
0.001
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.0001
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74285.
Document Number: 74285
S10-2542-Rev. D, 08-Nov-10
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Revision: 02-Oct-12
1
Document Number: 91000