28C010T 1 Megabit (128K x 8-Bit) EEPROM FEATURES: DESCRIPTION: • 128k x 8-bit EEPROM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C - SELTH > 120 MeV cm2/mg (Device) - SEUTH > 90 MeV cm2/mg(Memory Cells) - SEU TH > 18 MeV cm2/mg (Write Mode) - SETTH > 40 MeV cm2/mg (Read Mode) • Package: - 32 Pin RAD-PAK® Flat Pack - 32 Pin RAD-PAK® DUAL INLINE PACKAGE - JEDEC-approved byte-wide pinout • High speed: - 120, 150, and 200 ns maximum access times available • High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention • Page write mode: - 1 to 128 bytes • Automatic programming - 10 ms automatic page/byte write • Low power dissipation - 20 mW/MHz active (typical) - 110 µW standby (maximum) • Standard JEDEC package width Maxwell Technologies’ 28C010T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. The 28C010T is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad(Si) radiation dose tolerance. This product is available with screening up to Class S. 07.31.2013 Rev 16 (858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2013 Maxwell Technologies All rights reserved. Memory Logic Diagram 28C010T 1 Megabit (128K x 8-Bit) EEPROM TABLE 1. 28C010T PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 Address 13, 14, 15, 17, 18, 19, 20, 21 I/O0 - I/O7 Data I/O 24 OE Output Enable 22 CE Chip Enable 29 WE Write Enable 32 VCC Power Supply 16 VSS Ground 1 RDY/BUSY 30 RES Ready/Busy Reset PARAMETER SYMBOL MIN TYP MAX UNITS Supply Voltage (Relative to VSS) VCC -0.6 +7.0 V Input Voltage (Relative to VSS) VIN -0.5 1 +7.0 V Package Weight RP 7.4 RT 2.7 RD 10.9 Thermal Impedance (RP and RT Packages) FJC 2.4 °C/W Thermal Impedance (DIP Package) FJC 2.17 °C/W Operating Temperature Range TOPR -55 +125 °C Storage Temperature Range TSTG -65 +150 °C Memory TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS Grams 1. VIN min = -3.0V for pulse width < 50ns. TABLE 3. DELTA LIMITS1 VARIATION2 PARAMETER ICC1 ±10% ICC2 ±10% ICC3A ±10% ICC3B ±10% 1. Parameters are measured and recorded as Deltas per MIL-STD-883 for Class S Devices 2. Specified in Table 6 07.31.2013 Rev 16 All data sheets are subject to change without notice 2 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage VCC 4.5 5.5 V Input Voltage VIL -0.31 0.8 V VIH 2.2 VCC +0.3 VH VCC -0.5 VCC +1 SYMBOL MIN MAX UNITS CIN -- 6 pF COUT -- 12 pF RES_PIN 1. VIL min = -1.0V for pulse width < 50 ns TABLE 5. 28C010T CAPACITANCE (TA = 25 °C, f = 1 MHZ) PARAMETER Input Capacitance: VIN = 0V 1 Output Capacitance: VOUT = 0V 1 Memory 1. Guaranteed by design. TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS Input Leakage Current VCC = 5.5V, VIN = 5.5V 1, 2, 3 IIL -- 21 µA Output Leakage Current VCC = 5.5V, VOUT = 5.5V/0.4V 1, 2, 3 ILO -- 2 µA Standby VCC Current CE = VCC 1, 2, 3 ICC1 -- 20 µA ICC2 -- 1 mA mA CE = VIH Operating VCC Current IOUT = 0mA, Duty = 100%, Cycle = 1µs at VCC = 5.5V 1, 2, 3 ICC3A -- 15 IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V 1, 2, 3 ICC3B -- 50 1, 2, 3 VIL -- 0.8 VIH 2.2 -- VH VCC -0.5 -- VOL -- 0.4 IOH = - 0.4 mA VOH 2.4 -- IOH= - 0.1 mA VOH VCC-0.3V Input Voltage RES_PIN Output Voltage2 IOL = 2.1 mA 1, 2, 3 V V 1. ILI for RES = 100uA max. 2. RDY/BSY is an open drain output. Only VOL applies to this pin. 07.31.2013 Rev 16 All data sheets are subject to change without notice 3 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 5V + 10%, TA = -55 TO +125 °C) PARAMETER SUBGROUPS Address Access Time CE = OE = VIL, WE = VIH -120 -150 -200 tACC 9, 10, 11 Chip Enable Access Time OE = VIL, WE = VIH -120 -150 -200 tCE Output Enable Access Time CE = VIL, WE = VIH -120 -150 -200 tOE Output Hold to Address Change CE = OE = VIL, WE = VIH -120 -150 -200 tOH Output Disable to High-Z 2 CE = VIL, WE = VIH -120 -150 -200 CE = OE = VIL, WE = VIH -120 -150 -200 RES to Output Delay3 CE = OE = VIL, WE = VIH -120 -150 -200 MIN MAX UNITS ns ---- 120 150 200 9, 10, 11 ns ---- 120 150 200 9, 10, 11 ns 0 0 0 75 75 100 9, 10, 11 Memory SYMBOL ns 0 0 0 ---- 9, 10, 11 ns tDF tDFR tRR 0 0 0 50 50 60 0 0 0 300 350 450 9, 10, 11 ns ---- 400 450 650 1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. 07.31.2013 Rev 16 All data sheets are subject to change without notice 4 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS (VCC = 5V + 10%, TA = -55 TO +125 °C) SYMBOL SUBGROUPS Address Setup Time -120 -150 -200 tAS 9, 10, 11 Chip Enable to Write Setup Time (WE controlled) -120 -150 -200 tCS PARAMETER MAX 0 0 0 ---- 0 0 0 ---- 200 250 350 ---- 200 250 350 ---- 150 150 200 ---- 75 100 150 ---- 10 10 10 ---- 0 0 0 ---- 0 0 0 ---- 0 0 0 ---- UNITS ns 9, 10, 11 ns 9, 10, 11 tCW ns Memory Write Pulse Width CE controlled -120 -150 -200 WE controlled -120 -150 -200 MIN 1 tWP Address Hold Time -120 -150 -200 tAH Data Setup Time -120 -150 -200 tDS Data Hold Time -120 -150 -200 tDH Chip Enable Hold Time (WE controlled) -120 -150 -2000 tCH Write Enable to Write Setup Time (CE controlled) -120 -150 -200 tWS Write Enable Hold Time (CE controlled) -120 -150 -200 tWH 07.31.2013 Rev 16 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 9, 10, 11 ns ns 9, 10, 11 ns All data sheets are subject to change without notice 5 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS (VCC = 5V + 10%, TA = -55 TO +125 °C) SUBGROUPS Output Enable to Write Setup Time -120 -150 -200 tOES 9, 10, 11 Output Enable Hold Time -120 -150 -200 tOEH Write Cycle Time2 -120 -150 -200 tWC Data Latch Time -120 -150 -200 tDL Byte Load Window -120 -150 -200 tBL Byte Load Cycle -120 -150 -200 tBLC Time to Device Busy -120 -150 -200 tDB Write Start Time3 -120 -150 -200 tDW RES to Write Setup Time4 -120 -150 -200 tRP VCC to RES Setup Time4 -120 -150 -200 tRES MIN 1 MAX 0 0 0 ---- 0 0 0 ---- ---- 10 10 10 250 300 400 ---- 100 100 200 ---- 0.55 0.55 0.95 30 30 30 100 120 170 ---- 150 150 250 ---- 100 100 200 ---- 1 1 3 ---- UNITS ns 9, 10, 11 ns 9, 10, 11 ms 9, 10, 11 ns 9, 10, 11 Memory SYMBOL PARAMETER µs 9, 10, 11 µs 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 µs 9, 10, 11 µs 1. Use this device in a longer cycle than this value. 07.31.2013 Rev 16 All data sheets are subject to change without notice 6 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. TABLE 9. 28C010T MODE SELECTION 1 CE OE WE I/O RES RDY/BUSY Read VIL VIL VIH DOUT VH High-Z Standby VIH X X High-Z X High-Z Write VIL VIH VIL DIN VH High-Z --> VOL Deselect VIL VIH VIH High-Z VH High-Z Write Inhibit X X VIH -- X -- X VIL X -- X -- Data Polling VIL VIL VIH Data Out (I/O7) VH VOL Program X X X High-Z VIL High-Z Memory PARAMETER 1. X = Don’t care. FIGURE 1. READ TIMING WAVEFORM 07.31.2013 Rev 16 All data sheets are subject to change without notice 7 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 07.31.2013 Rev 16 All data sheets are subject to change without notice 8 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory 07.31.2013 Rev 16 All data sheets are subject to change without notice 9 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 07.31.2013 Rev 16 All data sheets are subject to change without notice 10 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) Memory FIGURE 6. DATA POLLING TIMING WAVEFORM 07.31.2013 Rev 16 All data sheets are subject to change without notice 11 ©2013 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28C010T FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (ENABLE S/W PROTECTION) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (DISABLE S/W PROTECTION) Memory EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte of data can be loaded within 30µs. In case CE and WE are kept high for 100 µs after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. 07.31.2013 Rev 16 All data sheets are subject to change without notice 12 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. 07.31.2013 Rev 16 All data sheets are subject to change without notice 13 ©2013 Maxwell Technologies All rights reserved. Memory When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch function. 28C010T 1 Megabit (128K x 8-Bit) EEPROM During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at VCC on/off RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. tRES tRP tWC 3. Software Data Protection 07.31.2013 Rev 16 All data sheets are subject to change without notice 14 ©2013 Maxwell Technologies All rights reserved. Memory When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 1 Megabit (128K x 8-Bit) EEPROM 28C010T The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. Memory 07.31.2013 Rev 16 All data sheets are subject to change without notice 15 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM Memory 32 PIN DUAL IN-LINE PACKAGE1,2 DIMENSION SYMBOL MIN NOM MAX A -- 0.187 0.225 b 0.016 0.018 0.020 b2 0.045 0.050 0.065 c 0.009 0.010 0.012 D -- 1.600 1.616 E 0.510 0.590 0.610 eA 0.600 BSC eA/2 0.300 BSC e 0.100 BSC L 0.135 0.145 0.155 Q 0.015 0.037 0.060 S1 0.005 0.025 -- S2 0.005 -- -- N 32 1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is 3000g’s. Top and Bottom of the package connected internaly to ground. Note: All dimensions in inches 07.31.2013 Rev 16 All data sheets are subject to change without notice 16 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM D Memory 28C010T 32-PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A 0.121 0.134 0.147 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.304 0.310 -- E3 0.030 0.085 -- e 0.050BSC L 0.355 0.365 0.375 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N 32 Top and Bottom of the package connected internaly to ground. Note: All dimensions in inches. 07.31.2013 Rev 16 All data sheets are subject to change without notice 17 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM D Memory 28C010T Rad-Tolerant Flat Package SYMBOL DIMENSION MIN NOM MAX A 0.095 0.109 0.125 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.350 0.365 -- E3 0.030 0.085 -- e 0.050BSC L 0.355 0.365 0.375 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N 32 Note: All Dimentions in Inches Top and Bottom of the package is connected internally to ground. 07.31.2013 Rev 16 All data sheets are subject to change without notice 18 ©2013 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28C010T Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 07.31.2013 Rev 16 All data sheets are subject to change without notice 19 ©2013 Maxwell Technologies All rights reserved. 28C010T 1 Megabit (128K x 8-Bit) EEPROM Product Ordering Options Model Number 28C010T XX F X -XX Option Details Feature Access Time 12 = 120 ns 15 = 150 ns 20 = 200 ns Screening Flow Memory Package1 Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) D = Dual In-line Package (DIP)1 F = Flat Pack Radiation Feature2 RP = RAD-PAK® package RT = No Radiation Guarantee Class E and I Only RT1 = 10 Krad (Read/Write) RT2 = 25 Krad (Read/Write); RT4 = 40 Krad (Read/Write) RT6 = 60 Krad (Read/Write) RT4R = 40 Krad (Read); 25 Krad (Write) RT6R = 60 Krad (Read), 25 Krad (Write) Base Product Nomenclature 1 Megabit (128k x 8-bit) EEPROM 1) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type Constant Acceleration is 3000g’s. 2.) The device will meet the specified read mode TID level, at the die level, if it is not written to dur- ing irradiation. Writing to the device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device before irradiation does not alter the device’s read mode TID level. 07.31.2013 Rev 16 All data sheets are subject to change without notice 20 ©2013 Maxwell Technologies All rights reserved.