28LV011 1 Megabit (128K x 8-Bit) EEPROM VCC High Voltage Generator VSS I/O0 I/O7 RDY/Busy RES RES I/O Buffer and Input Latch OE CE Control Logic Timing WE RES 28LV011A A0 Y Decoder Y Gating X Decoder Memory Array A6 Address Buffer and Latch A7 A16 Data Latch Memory Logic Diagram FEATURES: DESCRIPTION: • 3.3V Low Voltage Operation, 128k x 8-bit EEPROM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C - SEL > 120 MeV cm2/mg (Device) - SEU > 85 MeV cm2/mg(Memory Cells) - SEU > 18 MeV cm2/mg (Write Mode) - SET > 40 MeV cm2/mg (Read Mode) • Package: - 32-pin RAD-PAK® flat package - JEDEC-approved byte-wide pinout • High speed: - 200 and 250 ns maximum access times available • High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention • Page write mode: - 1 to 128 bytes • Low power dissipation - 20 mW/MHz active (typical) - 110 µW standby (maximum) Maxwell Technologies’ 28LV011 high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV011 is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV011, hardware data protection is provided with the RES , in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies’ self-defined Class S. 03.24.15 Rev 4 (858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM TABLE 1. 28LV011 PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 24 OE Output Enable 22 CE Chip Enable 29 WE Write Enable 32 VCC Power Supply 16 VSS Ground 1 RDY/BUSY 30 RES Address Ready/Busy Reset TABLE 2. 28LV011 ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Supply Voltage (Relative to VSS) VCC -0.6 +7.0 V Input Voltage (Relative to VSS) VIN -0.5 +7.0 V -55 +125 °C Operating Temperature Range TOPR Storage Temperature Range TSTG -65 +150 °C 1 Memory PARAMETER 1. VIN min = -3.0V for pulse width < 50ns. TABLE 3. DELTA LIMITS PARAMETER VARIATION ICC1 ±10% ICC2 ±10% ICC3A ±10% ICC3B ±10% TABLE 4. 28LV011 RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage VCC 3.0 3.6 V Input Voltage VIL -0.31 0.8 V VIH 2.2 VCC +0.3 VH VCC -0.5 VCC +1 TOPR -55 +125 RES_PIN Operating Temperature Range °C 1. VIL min = -1.0V for pulse width < 50 ns 03.24.15 Rev 4 All data sheets are subject to change without notice 2 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM TABLE 5. 28LV011 CAPACITANCE (TA = 25 °C, f = 1 MHZ) PARAMETER Input Capacitance: VIN = 0V 1 Output Capacitance: VOUT = 0V 1 SYMBOL MIN MAX UNITS CIN -- 6 pF COUT -- 12 pF 1. Guaranteed by design. TABLE 6. 28LV011 DC ELECTRICAL CHARACTERISTICS (VCC =3.35V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION Input Leakage Current SYMBOL MIN MAX UNITS VCC = 3.6V, VIN = 3.6V 1, 2, 3 IIL -- 21 µA Output Leakage Current VCC = 3.6V, VOUT = 3.6V/0.4V 1, 2, 3 ILO -- 2 µA Standby VCC Current CE = VCC 1, 2, 3 ICC1 -- 20 µA ICC2 -- 1 mA ICC3 -- 6 mA -- 15 VIL -- 0.8 VIH 2.0 -- VH VCC -0.5 -- VOL -- 0.4 IOH = -0.4 mA VOH 2.4 -- IOH = -0.1mA VOH VCC-0.3V CE = VIH Operating VCC Current IOUT = 0mA, Duty = 100%, Cycle = 1µs at VCC = 3.3V 1, 2, 3 IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 3.3V 1, 2, 3 1, 2, 3 Input Voltage RES_PIN Output Voltage IOL = 2.1 mA 1, 2, 3 Memory SUBGROUPS V V 1. ILI on RES = 100 uA max. TABLE 7. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 3.3V + 10%, TA = -55 TO +125 °C) PARAMETER SYMBOL SUBGROUPS Address Access Time CE = OE = VIL, WE = VIH -200 -250 tACC 9, 10, 11 Chip Enable Access Time OE = VIL, WE = VIH -200 -250 tCE MIN UNITS ns --- 200 250 ns 9, 10, 11 --- 03.24.15 Rev 4 MAX 200 250 All data sheets are subject to change without notice 3 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM TABLE 7. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 3.3V + 10%, TA = -55 TO +125 °C) PARAMETER SYMBOL SUBGROUPS Output Enable Access Time CE = VIL, WE = VIH -200 -250 tOE 9, 10, 11 Output Hold to Address Change CE = OE = VIL, WE = VIH -200 -250 tOH Output Disable to High-Z 2 CE = VIL, WE = VIH -150 -200 CE = OE = VIL, WE = VIH -200 -250 tDF MIN MAX ns 0 0 110 120 ns 9, 10, 11 0 0 --ns 9, 10, 11 tDFR tRR 0 0 50 50 0 0 300 350 Memory RES to Output Delay3 CE = OE = VIL, WE = VIH -200 -250 UNITS ns 9, 10, 11 0 0 525 550 1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE OPERATIONS (VCC = 3.3V + 10%, TA = -55 TO +125 °C) PARAMETER SYMBOL SUBGROUPS Address Setup Time -200 -250 tAS 9, 10, 11 Chip Enable to Write Setup Time (WE controlled) -200 -250 tCS 9, 10, 11 03.24.15 Rev 4 MIN 1 MAX 0 0 --- 0 0 --- UNITS ns ns All data sheets are subject to change without notice 4 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE OPERATIONS (VCC = 3.3V + 10%, TA = -55 TO +125 °C) PARAMETER Write Pulse Width CE controlled -150 -200 WE controlled -150 -200 SYMBOL SUBGROUPS MIN 1 MAX ns 9, 10, 11 tCW tWP tAH 9, 10, 11 Data Setup Time -200 -250 tDS 9, 10, 11 Data Hold Time -150 -200 tDH 9, 10, 11 Chip Enable Hold Time (WE controlled) -200 -250 tCH 9, 10, 11 Write Enable to Write Setup Time (CE controlled) -200 -250 tWS 9, 10, 11 Write Enable Hold Time (CE controlled) -150 -200 tWH 9, 10, 11 Output Enable to Write Setup Time -200 -250 tOES 9, 10, 11 Output Enable Hold Time -200 -250 tOEH 9, 10, 11 Write Cycle Time2 -150 -200 tWC 9, 10, 11 Data Latch Time -200 -250 tDL 9, 10, 11 Byte Load Window -200 -250 tBL 9, 10, 11 03.24.15 Rev 4 200 250 --- 200 250 --- 125 150 --- 100 100 --- 10 10 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- --- 15 15 700 750 --- 100 100 --- ns ns ns Memory Address Hold Time -200 -250 UNITS ns ns ns ns ns ms ns µs All data sheets are subject to change without notice 5 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE OPERATIONS (VCC = 3.3V + 10%, TA = -55 TO +125 °C) PARAMETER SUBGROUPS Byte Load Cycle -200 -250 tBLC 9, 10, 11 Time to Device Busy -200 -250 tDB 9, 10, 11 Write Start Time3 -150 -200 tDW 9, 10, 11 RES to Write Setup Time -150 -200 tRP 9, 10, 11 VCC to RES Setup Time4 -200 -250 tRES 9, 10, 11 MIN 1 MAX 1 1 30 30 100 120 --- 250 250 --- 100 100 --- 1 1 --- UNITS µs ns ns µs µs 1. Use this device in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Gauranteed by design. TABLE 9. 28LV011 MODE SELECTION 1 PARAMETER CE OE WE I/O RES RDY/BUSY Read VIL VIL VIH DOUT VH High-Z Standby VIH X X High-Z X High-Z Write VIL VIH VIL DIN VH High-Z --> VOL Deselect VIL VIH VIH High-Z VH High-Z Write Inhibit X X VIH -- X -- X VIL X -- X -- Data Polling VIL VIL VIH Data Out (I/O7) VH VOL Program X X X High-Z VIL High-Z 1. X = Don’t care. 03.24.15 Rev 4 All data sheets are subject to change without notice 6 ©2015 Maxwell Technologies All rights reserved. Memory SYMBOL 28LV011 1 Megabit (128K x 8-Bit) EEPROM FIGURE 1. READ TIMING WAVEFORM Memory 03.24.15 Rev 4 All data sheets are subject to change without notice 7 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 03.24.15 Rev 4 All data sheets are subject to change without notice 8 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory 03.24.15 Rev 4 All data sheets are subject to change without notice 9 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 03.24.15 Rev 4 All data sheets are subject to change without notice 10 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) Memory FIGURE 6. DATA POLLING TIMING WAVEFORM 03.24.15 Rev 4 All data sheets are subject to change without notice 11 ©2015 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28LV011 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) Memory EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte of data can be loaded within 30µs. In case CE and WE are kept high for 100 µs after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. 03.24.15 Rev 4 All data sheets are subject to change without notice 12 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. 03.24.15 Rev 4 All data sheets are subject to change without notice 13 ©2015 Maxwell Technologies All rights reserved. Memory When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch function. 1 Megabit (128K x 8-Bit) EEPROM 28LV011 During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at VCC on/off RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 3. Software Data Protection 03.24.15 Rev 4 All data sheets are subject to change without notice 14 ©2015 Maxwell Technologies All rights reserved. Memory When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 1 Megabit (128K x 8-Bit) EEPROM 28LV011 The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. Memory 03.24.15 Rev 4 All data sheets are subject to change without notice 15 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM Memory 32-PIN RAD-PAK® FLAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A 0.117 0.130 0.143 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416 E1 -- -- 0.426 e 0.050BSC L 0.350 0.370 0.390 Q 0.021 0.033 0.036 S1 0.005 0.027 -- N 32 Note: All dimensions in inches Top and Bottom of the package are connected internally to ground. 03.24.15 Rev 4 All data sheets are subject to change without notice 16 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM Memory 28LV011 32-Pin Rad-Tolerant Flat Package SYMBOL DIMENSION MIN NOM MAX A 0.078 0.087 0.096 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416 E1 -- -- 0.426 e 0.050BSC L 0.390 0.400 0.410 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N 32 Note: All dimensions in inches Top and Bottom of the package are connected internally to ground. 03.24.15 Rev 4 All data sheets are subject to change without notice 17 ©2015 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28LV011 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 03.24.15 Rev 4 All data sheets are subject to change without notice 18 ©2015 Maxwell Technologies All rights reserved. 28LV011 1 Megabit (128K x 8-Bit) EEPROM Product Ordering Options 1 Feature Model Number 28LV011 XX F X Option Details -XX Access Time Screening Flow Radiation Feature2 Base Product Nomenclature Monolithic1 S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Memory Package 20 = 200 ns 25 = 250 ns F = Flat Pack RP = RAD-PAK® package RT = No Radiation Guarantee, Class E and I RT1 = 10 Krad (Read and Write) RT2R = 25 Krad (Read); 15 Krad (Write) RT4R = 40 Krad (Read); 15 Krad (Write) RT6R = 60 Krad (Read); 15 Krad (Write) 1 Megabit (128k x 8-bit) EEPROM 1) Products are manufactured and screened to Maxwell Technologies’ self-defined Class B and Class S. 2) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device’s TID tolerance the specified write mode TID level. Writing to the device before irradiation does not alter the device’s read mode TID level. 03.24.15 Rev 4 All data sheets are subject to change without notice 19 ©2015 Maxwell Technologies All rights reserved.