RS1A~RS1M (SMA-P)

WILLAS
RS1A
THRU
1.0A Surface Mount Fast Recovery Silicon Rectifier 50V~1000V
RS1M
SMA-P (DO-214AC) PACKAGE
FEATURES
SMA-P(DO-214AC)
* Open Junction Device
* Ideal for surface mounted applications
.181(4.60)
* Low leakage current
.160(4.06)
* RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.075(1.90)
.112(2.79)
.043(1.10)
.096(2.45)
MECHANICAL DATA
Case: Molded plastic, DO-214AC/SMA-P
Epoxy: UL 94V-O rate flame retardant
.091(2.31)
.067(1.70)
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026.
.059(1.52)
Mounting position: Any
.010 Max.
(0.25)
.030(0.76)
Polarity: Color band denotes cathode end
.208(5.30)
Weight: Approximated 0.064 gram.
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL
Marking Code
RS1A
RS1B
RS1D
RS1G
F1
F2
F3
F4
F5
RS1J
RS1K
RS1M
F6
F7
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
VDC
50
100
200
400
600
800
1000
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
1.0
Amps
IFSM
30
Amps
32
℃/W
Operating Temperature Range
RΘJL
CJ
TJ
Storage Temperature Range
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
SYMBOL
CHARACTERISTICS
RS1A
RS1B
RS1D
Maximum Average Reverse Current at
@T J=25℃
Rated DC Blocking Voltage
@T J=125℃
Maximum Reverse Recovery Time (Note 3)
IR
Trr
RS1G
℃
℃
RS1J
RS1K
RS1M
1.3
5
VF
Maximum Forward Voltage at 1.0A DC
PF
12
-55 to +150
-55 to +150
uAmps
150
150
UNIT
Volts
250
500
nSec
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal resistance from junction to lead mounted on P.C.B. with 0.3 x 0.3” (8.0 x 8.0mm) copper pad areas
3- Test Conditions: IF=0.5A,IR=-1A,IRR=0.25A
2012-06
WILLAS ELECTRONIC CORP.
WILLAS
RS1A
THRU
1.0A Surface Mount Fast Recovery Silicon Rectifiers 50V~1000V
RS1M
SMA-P(DO-214AC) PACKAGE
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
RATING AND CHARACTERISTIC CURVES
1.0
.8
.6
.4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.2
0
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE, ( )
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
4
TJ = 100
1.0
.4
.1
.04
TJ = 25
.01
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(+)
25 Vdc
(approx)
(-)
(-)
D.U.T
PULSE
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
2012-06
trr
0
-0.25A
(+)
-1.0A
1cm
JUNCTION CAPACITANCE, (pF)
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
SET TIME BASE FOR
50/100 ns/cm
1
2
4 6 8 10 20
40 60 80100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
8.3ms Single Half Sine-Wave
(JEDED Method)
20
10
TJ = 25
Pulse Width = 300us
1% Duty Cycle
1.0
.1
.01
.6
.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ = 25
2
1
.1
.2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
WILLAS ELECTRONIC CORP.
WILLAS
RS1A
THRU
1.0A Surface Mount Fast Recovery Silicon Rectifiers
50V~1000V
SMA-P(DO-214AC) PACKAGE
RS1M
Ordering Information: Device PN Part Number ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: 5 Kpcs/Reel (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06
WILLAS ELECTRONIC CORP.