SR1040C SR10200C(TO 220)

WILLAS
FM120-M+
SR1040C
THRUTHRU
10.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
TO-220RECTIFIERS
PACKAGE-20V- 200V
FM1200-M+
SR10200C
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
leakage current and thermal resistance.
Mechanical
Date
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
‧Case:TO-220
• Low power loss, high efficiency.
‧Case Material: Molded Plastic, UL Flammability
• High current capability, low forward voltage drop.
Rating 94V-0
High surge capability.
•Classification
Guardring for overvoltage protection.
•
‧Terminals: Matte Tin Finish annealed over copper
• Ultra high-speed switching.
frame. Solderable per MIL-STD-202
Silicon epitaxial planar chip, metal silicon junction.
•Lead
parts grams
meet environmental
standards of
• Lead-free
‧Weight:
1.
(approximate)
TO-220
0.146(3.7)
0.130(3.3)
.413(10.5)
.374(9.5)
.129(3.3)
.1(2.54)
0.012(0.3) Typ.
.153(3.9) .187(4.82)
.146(3.7) .148(3.8)
.270(6.9)
.230(5.8)
MIL-STD-19500 /228
.053(1.4)
.043(1.1)
0.071(1.8)
0.056(1.4)
.624(15.87)
• RoHS product for packing code suffix "G"
.578(14.7)
Halogen free product for packing code suffix "H"
Mechanical data
Features
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
‧Guard
forplastic,
over voltage
Protection
Molded
SOD-123H
• Case :Ring
,
• Terminals
:Plated
terminals,
solderable per MIL-STD-750
‧High
forward
surge
capability
.177(4.50)
.140(3.56)
0.031(0.8)
Typ.
.057(1.45)
.046(1.16)
0.031(0.8) Typ.
.583(14.8)
Method 2026
.039(1.00)
‧High frequency
operation
.499(12.7)
.023(0.60)
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
.028(0.7)
‧Component in accordance to RoHS 2002/95/EC
.014(0.36)
• Mounting Position : Any
‧ Pb-Free package is available
.102(2.6)
• Weight : Approximated 0.011 gram
RoHS product for packing code suffix ”G”
.126
.091(2.3)
(3.20)
MAXIMUM
RATINGS
AND ELECTRICAL
Halogen
free product
for packing
code suffix “H”CHARACTERISTICS
Dimensions in inches and (millimeters)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
Maximum RMS Voltage
VRMS
MAXIMUM
RATINGS (TA=25°C unless otherwise
noted)
Maximum DC Blocking Voltage
PARAMETER
Maximum Average Forward Rectified Current
Peak Forward
Surge Current
ms single
half sine-wave
Maximum
repetitive
peak8.3
reverse
voltage
superimposed
on rated
load (JEDEC method)
Maximum
RMS
voltage
Typical Thermal
Resistance
(Note 2)
Maximum
DC blocking
voltage
Typical Junction Capacitance (Note 1)
Maximum
forward
Operating average
Temperature
Rangerectified current
(Total)
Storage Temperature Range
(Per Leg)
VDC
SYMBOL
IO
20
Maximum Average Reverse Current at @T A=25℃
Maximum Instantaneous Forward Voltage
@T A=125℃
Rated DC Blocking Voltage
IF=5A @ 25°C
Typical Junction Capacitance(NOTE1)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
115
150
120
200
Volts
28
35
42
56
70
105
140
50
60
80
100
150
200
Volts
SR1040C
SR1060C
SR10100C
1.0
SR10200C UNIT
Amps
SR10150C
28
40
60
100
30
42
70
40
100
120
60
-55 to +125
I
150
200
VAmps
105
140
V
150
200
V
℃/W
PF
-55 to +150
℃
10to +175
- 65
F
TSTG
A℃
5
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
IVFSM
F
IR
VF
Cj
0.70 100.0
0.50
0.9
0.85
0.5
0.55
NOTES: DC Reverse Current @ Tc=25°C
Maximum
Measured
1 MHZ andVoltage
applied reverse
voltage of 4.0 VDC. IR
at1-Rated
DCatBlocking
@ Tc=100°C
2- Thermal Resistance From Junction to Ambient
10
100
40
Peak forward surgeCHARACTERISTICS
current, 8.3ms single half
Maximum Forward
Voltage aton
1.0A
DC load
sine-wave
superimposed
rated
18
80
30
VRMS
TJ
16
60
21
40
DC
CJ
15
50
Volts
V
RRM
IFSM
RVΘJA
14
40
0.70
250
TJ
TSTG
0.92
0.2
5
200
RθJC
AVolts
0.85
10
0.5
20
0.92
mAmps
V
mA
150
pF
3
°C/W
-55 to +125
-55 to +150
-55 to +150
°C
°C
NOTES:1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2012-06
2012-08
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SR1040C
THRUTHRU
10.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
TO-220RECTIFIERS
PACKAGE-20V- 200V
FM1200-M+
SR10200C
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTICS
optimize board space.
Low power loss, high efficiency.
• High current capability, low forward voltage drop.
SR1040C~SR10100C
• High surge capability.
SR10150C~SR10200C
protection.
15• Guardring for overvoltage
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
10
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
100.00
INSTANTANEOUS F
FORWARD CURRENT (A)
AVERAGE FO
ORWARD CURRENT,(A)
20•
Mechanical data
5
• Epoxy : UL94-V0 rated flame retardant
0• Case : Molded plastic, SOD-123H
,
20
40
60
80 100 120 140 160 180 200
• 0Terminals
:Plated terminals, solderable per MIL-STD-750
10.00
0.071(1.8)
0.056(1.4)
1.00
0.10
SR100C
0.040(1.0)
SR100C
0.024(0.6)
SR100C
SR10150C~SR10200C
0.031(0.8) Typ.
0.031(0.8) Typ.
0.01
0.2
0.4
Method
2026
AMBIENT
TEMPERATURE(℃)
100
REVERSE LEAKAG
GE CURRENT (mA)
PEAK FORWARD SUR
RGE CURRENT (A)
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
TJ=25℃ 8.3ms Single
100
RATINGS
VRRM
12
20
13
30
14
40
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
0
Maximum Average
Forward Rectified Current
1
10
IO
IFSM
OF CYCLES AT 60Hz
superimposed on rated loadNUMBER
(JEDEC method)
SR1040C
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SR1060C
SR10100C
@T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
16
60
18
80
10
100
115
150
120
200
Volts
35
0.001
42
56
70
105
140
Volts
50
60
80
100
150
200
Volts
1.0
40
60
80
100
30 RATED PEAK REVERSE VOLTAGE (%)
PERCENTAGE
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
SR10150C~SR10200C
600Average Reverse Current at
Maximum
15
0.01
50
TJ
1000
Storage Temperature Range
Maxi
100℃
01
0.1
20
100
CJ
Typical
Junction Capacitance
1)
FIG. 5-TYPICAL
JUNCTION (Note
CAPACITANCE
Operating Temperature Range
800
25℃
0.0001
RΘJA
Typical Thermal Resistance (Note 2)
1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Recurrent Peak Reverse Voltage
50
Maximum RMS Voltage
JUNCTION CAPACITANCE (pF)
1.0
Dimensions in inches and (millimeters)
Ratings150
at 25℃ ambient temperature
unless otherwise specified.
Half Sine Wave
method
Single phase half wave, 60Hz,JEDEC
resistive
of inductive load.
For capacitive load, derate current by 20%
Peak Forward Surge Current 8.3 ms single half sine-wave
0.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS10
Marking Code
0.6
FORWARD VOLTAGE (V)
• Polarity : Indicated by cathode band
Position : Any FORWARD SURGE CURRENT
• MountingNON-REPETITIVE
FIG. 3-MAXIMUM
•200
Weight : Approximated 0.011 gram
0.012(0.3) Typ.
TJ=25℃ PULSE
WIDTH 300us 2%
DUTY CYCLE
0.70
0.85
0.5
IR
10
0.9
0.92
Volts
mAmps
400
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
200Resistance From Junction to Ambient
2- Thermal
0
0
1
10
100
REVERSE VOLTAGE (V)
2012-06
2012-08
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.