WILLAS FM120-M+ THRU DAN202U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SWITCHING DIODE better reverse leakage current and thermal resistance. Low profile surface mounted application in order to • FEATURES: z z z z z z Pb Free Product SOD-123H SOT-323 optimize board space. Four packaging are available powerof loss, high efficiency. • Lowtypes High current capability, low forward voltage drop. • High speed • High surge capability. Suitable for for high packing density layout overvoltage protection. • Guardring High reliability high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • Pb-Free package is available • Lead-free parts meet environmental standards of RoHS product for/228 packing code suffix ”G” MIL-STD-19500 RoHS product for packing code suffix "G" • Halogen free product for packing code suffix “H” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 3 Halogen free product for packing code suffix "H" 2 Moisture Sensitivity Mechanical dataLevel 1 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any MARKING:N • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Maximum Ratings and RATINGS ElectricalAND Characteristics, Diode @Ta=25 ℃ MAXIMUM ELECTRICAL Single CHARACTERISTICS Ratings at 25℃ Parameter ambient temperature unless otherwise specified. Symbol Single phase half wave, 60Hz, resistive of inductive load. Peak reverse voltage VRM For capacitive load, derate current by 20% DC reverse voltage RATINGS Unit 80 V VR FM120-MH FM130-MH FM140-MH FM150-MH 80 V FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM1200-MH UNI Marking Code (peak) forward current Maximum Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 40 15 300 VRRM 50 18 80 10 100 Maximum RMS Voltage VRMS 14 21 28 100 16 60 35 42 56 70 mA105 20 30 40 200 50 60 80 100 mW 150 Average forward current Power dissipation Maximum DC Blocking Voltage Limit IFM IO D VP DC Maximum Average Forward Rectified Current Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave Operating/Storage temperature superimposed on rated load (JEDEC method) IT Oj stg FSM IT 1.0 30 150 -55~+150 Typical Thermal Resistance (Note 2) RΘJA unless otherwise ELECTRICAL CHARACTERISTICS (Ta=25℃ specified) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Parameter Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Reverse voltage leakage current V(BR) Forward voltage VF @T A=125℃ IR IR Test conditions Min - 65 to +175 IR= 100μA 200 Volts Amp Amp ℃/W PF -55 to +150 Max 80 ℃ Unit ℃ V 0.50 VR=70V 0.70 0.85 0.5 0.1 0.9 μA V Diode capacitance CD VR=6V, f=1MHz 3.5 pF Reverse recovery time trr VR=6V, IF=5mA 4 ns 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.92 Volt mAm 1.2 2012-1 Volts ℃ IF=100mA 2012-06 Volts 140 ℃ VF 2- Thermal Resistance From Junction to Ambient 120 200 10 NOTES: -55 to +125 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Symbol TSTG Reverse breakdown voltage 40 120 mA115 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DAN202UTHRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. Forward Characteristics switching. •100Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Typical Characteristics 0.146(3.7) 0.130(3.3) (nA) Mechanical data T= a 2 5℃ • Epoxy : UL94-V0 rated flame retardant 3 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 1 Method 2026 • Polarity : Indicated by cathode band 0.3 • Mounting Position : Any • 0.1Weight : Approximated 0.011 gram 0.2 0.4 0.6 REVERSE CURRENT IR Halogen free product for packing code suffix "H" 10 T= a 1 00 ℃ (mA) IF • RoHS product for packing code suffix "G" 0.0 Ta=100℃ 0.040(1.0) 0.024(0.6) 30 0.031(0.8) Typ. Ta=25℃ Dimensions in inches and (millimeters) 3 0.8 1.0 1 1.2 0 20 40 60 REVERSE VOLTAGE VR 80 (V) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS Power Derating Curve Capacitance Characteristics Marking Code 1.6 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM superimposed on rated load (JEDEC method) 1.2 Storage Temperature Range TSTG CHARACTERISTICS Maximum1.0 Forward Voltage at 1.0A DC 5 VF 10 REVERSE VOLTAGE 16 60 18 80 10 100 115 150 120 200 Vol 28 35 42 56 70 105 140 Vol 40 50 60 80 100 150 200 Vol 1.0 30 150 Am Am 40 120 100 ℃/ PF -55 to +150 ℃ - 65 to +175 50 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 15 50 -55 to +125 TJ Operating Temperature Range 0 CJ Typical Junction Capacitance (Note 1) 200 14 40 RΘJA Typical Thermal Resistance (Note 2) 250 PD 1.4 POWER DISSIPATION f=1MHz (mW) 12 Ta=25℃ 20 VRRM CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave 0.031(0.8) Typ. 10 F 0.071(1.8) 0.056(1.4) 100 FORWARD VOLTAGE AND V (V)ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Characteristics 300 MIL-STD-19500 /228 30 FORWARD CURRENT Reverse 1000 0.012(0.3) Typ. VR 15 (V) @T A=125℃ IR 20 0.50 0 0 0.70 25 50 0.9 0.85 0.5 75 AMBIENT TEMPERATURE 10 100 Ta 125 0.92 150 Vo (℃ ) mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DAN202UTHRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-323 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .070(1.80) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .096(2.45) .078(2.00) Mechanical data MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code 0.012(0.3) Typ. .010(0.25) 18 10 .003(0.08) 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 Maximum Average Forward Rectified Current IO IFSM .056(1.40) .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .004(0.10)MAX. TJ Operating Temperature Range Storage Temperature Range 13 30 14 40 15 50 16 60 115 150 120 200 Vol 70 105 140 Vol 100 150 200 Vol 1.0 30 40 120 -55 to +125 Am Am ℃/ PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR .016(0.40) .008(0.20) @T A=125℃ 0.50 .043(1.10) .032(0.80) VF Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 0.9 0.92 Vo 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU DAN202U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, capability. (1)G(2)‐WS • High surge DAN202U‐T Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape&Reel Packing • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amp and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) use of any product or circuit. ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, 65 to +175 Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient Operating Temperature Range 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.