APTGF75SK60D1 Buck Chopper NPT IGBT Power Module VCES = 600V IC = 75A @ Tc = 80°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • 5 7 6 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 600 100 75 187 ±20 355 Tj = 125°C 150A@520V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2003 1 2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF75SK60D1 – Rev 0 3 4 Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Low stray inductance - M5 power connectors High level of integration APTGF75SK60D1 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Fall Time Turn-on Delay Time Tr Td(off) Turn-off Delay Time Fall Time Eoff Turn off Energy Symbol Characteristic Diode Forward Voltage ER Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 3Ω Min Test Conditions IF = 75A VGE = 0V IF = 75A VR = 300V di/dt =800A/µs IF = 75A VR = 300V di/dt =800A/µs TJ TSTG TC Torque Wt 4.5 1 1 1.95 2.2 5.5 500 Typ 3300 300 65 2.45 Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight Max Unit pF ns 20 65 25 ns 170 35 Tj = 125°C 2.3 Tj = 25°C 5 Tj = 125°C 8 Min IGBT Diode Typ mJ Max 1.6 -40 -40 -40 2 3 Unit V mJ µC Max 0.35 0.66 2500 APT website – http://www.advancedpower.com V V nA 155 Typ 1.25 1.2 M5 M6 Unit V µA mA 6.5 400 20 Min Symbol Characteristic VISOL Max Tj = 25°C Tj = 125°C Thermal and package characteristics RthJC Typ 600 2.4 Reverse diode ratings and characteristics VF Min Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 75A RG = 3Ω Rise Time Tf Test Conditions VGE = 0V, IC = 500µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C VGE = 15V Tj = 25°C IC = 75A Tj = 125°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Unit °C/W V 150 125 125 3.5 5 180 July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage °C N.m N.m g 2-3 APTGF75SK60D1 – Rev 0 Electrical Characteristics APTGF75SK60D1 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGF75SK60D1 – Rev 0 July, 2003 Package outline