APTGT75X120E3 3 Phase bridge Trench IGBT® Power Module VCES = 1200V IC = 75A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration • 19 17 • • • 15 Benefits 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Operating Area • • • • • • • Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile TC = 25°C Max ratings 1200 100 75 175 ±20 350 Tj = 125°C 150A@1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2003 14 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT75X120E3 – Rev 0 20 APTGT75X120E3 VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current All ratings @ Tj = 25°C unless otherwise specified Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn off Energy Symbol Characteristic Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V VCE = 25V f = 1MHz TJ TSTG TC Torque Wt Typ 1.7 2.0 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω Test Conditions IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =825A/µs IF = 75A VR = 600V di/dt =825A/µs Typ 5340 280 240 260 30 420 Max 5 2.1 Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight 6.5 500 V nA Max Unit pF ns 45 ns 520 90 Typ 1.6 1.6 Tj = 25°C 3 Tj = 125°C 6 Tj = 25°C 7.6 Tj = 125°C 13.7 Min IGBT Diode Typ mJ Max 2.1 -40 -40 -40 3 Unit V mJ µC Max 0.35 0.58 2500 APT website – http://www.advancedpower.com V 285 Min M5 Unit V mA 70 Tj = 25°C Tj = 125°C Symbol Characteristic VISOL 1.4 Min Thermal and package characteristics RthJC Min 1200 9.5 Reverse diode ratings and characteristics VF Test Conditions VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Unit °C/W July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current V 150 125 125 4.5 300 °C N.m g 2-3 APTGT75X120E3 – Rev 0 Electrical Characteristics APTGT75X120E3 Package outline PIN 1 July, 2003 PIN 21 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT75X120E3 – Rev 0 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :