LVB1560 www.vishay.com Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214, Vol. 1 • Thin single in-Iine package • Oxide planar chip junction • Low forward voltage drop • High surge current capability ~ ~ • High case dielectric strength of 2500 VRMS ~ ~ • Solder dip 275 °C max. 10 s, per JESD 22-B106 Case Style GSIB-5S • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for telecom power supply, high efficiency desktop PC and server SMPS. PRIMARY CHARACTERISTICS Package GSIB-5S IF(AV) 15 A VRRM 600 V MECHANICAL DATA IFSM 400 A IR 10 μA VF at IF = 7.5 A, TA = 125 °C 0.73 V TJ max. 150 °C Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Diode variations In-Line Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified output current at LVB1560 UNIT VRRM 600 V TC = 125 °C IO (1) 15 TA = 25 °C IO (2) 3.6 IFSM 400 A I2t 664 A2s TJ, TSTG - 55 to + 150 °C Non-repetiitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) SYMBOL TJ = 25 °C Operating junction and storage temperature range A Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Revision: 26-Jun-13 Document Number: 89392 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LVB1560 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C VF (1) TYP. MAX. 0.87 0.90 0.73 - 0.2 10 60 - UNIT Instantaneous forward voltage IF = 7.5 A Reverse current per diode VR = 600 V Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 260 - pF TA = 125 °C TA = 25 °C IR (2) TA = 125 °C V μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance SYMBOL LVB1560 RJA (2) 25 RJC (1) 1.0 UNIT °C/W Notes (1) With heatsink (2) Without heatsink, free air EMC SURGE IMMUNITY TEST STANDARD (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE VPEAK - 6 kV maximum IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 , TA = 25 °C (1) Note (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 , 5 times each of positive and negative polarity test ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.9 45 20 Tube LVB1560-M3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Forward Output Current (A) 20 With Heatsink, Sine-Wave, R-Load 15 10 TC Measurement 5 5 4 3 2 1 Without Heatsink Sine-wave, R-Load, Free Air, TA 0 0 0 25 50 75 100 125 150 Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current Revision: 26-Jun-13 0 25 50 75 100 125 150 Ambient Temperature (°C) Fig. 2 - Forward Current Derating Curve Document Number: 89392 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LVB1560 www.vishay.com Vishay General Semiconductor 1000 Instantaneous Reverse Current (μA) Forward Power Dissipation (W) 28 24 20 16 12 8 4 0 TA = 150 °C 100 TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0 2 4 6 8 10 12 14 16 10 Average Forward Current ( A ) Fig. 3 - Forward Power Dissipation Junction Capacitance (pF) Instantaneous Forward Current (A) 40 50 60 70 80 90 100 1000 TA = 150 °C 10 TA = 125 °C 0.1 0.3 30 Fig. 5 - Typical Reverse Characteristics Per Diode 100 1 20 Percent of Rated Peak Reverse Voltage (%) TA = 100 °C TA = 25 °C TJ = 25 °C f = 1 MHz Vstg = 50 mVP-P 100 10 1 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 1.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 Revision: 26-Jun-13 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 Document Number: 89392 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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