New Product LVB2560 Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214, Vol. 1 • Thin single in-Iine package • Oxide planar chip junction • Low forward voltage drop • High surge current capability ~ ~ ~ ~ • High case dielectric strength of 2500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Case Style GSIB-5S • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for Telecom power supply, high efficiency desktop PC and server SMPS: PRIMARY CHARACTERISTICS IF(AV) 25 A VRRM 600 V IFSM 550 A IR 10 μA VF at IF = 12.5 A, TA = 125 °C 0.76 V TJ max. 150 °C MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified output current at TC = 105 °C TA = 25 °C Non-repetiitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range SYMBOL LVB2560 UNIT VRRM 600 V IO (1) 25 IO (2) 3.6 IFSM 550 A I2t 1255 A2s TJ, TSTG - 55 to + 150 °C A Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Document Number: 89393 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product LVB2560 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS TA = 25 °C IF = 12.5 A Instantaneous forward voltage VF (1) TA = 125 °C TA = 25 °C VR = 600 V Reverse current per diode SYMBOL MAX. 0.89 0.92 0.76 - 0.2 10 140 - UNIT V IR (2) TA = 125 °C TYP. μA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 330 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance LVB2560 RJA (2) 25 RJC (1) 1.0 UNIT °C/W Notes With heatsink Without heatsink, free air (1) (2) EMC SURGE IMMUNITY TEST STANDARD (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 , TA = 25 °C (1) VPEAK - VALUE 6 kV maximum Note (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 , 5 times each of positive and negative polarity test ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 7.1 45 20 Tube LVB2560-M3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Forward Output Current (A) 30 With Heatsink, Sine-Wave, R-Load 25 20 15 TC Measurement 10 5 5 4 3 2 1 Without Heatsink Sine-wave, R-Load, Free Air, TA 0 0 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 Temperature (°C) Ambient Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 150 Document Number: 89393 Revision: 20-Dec-10 New Product LVB2560 Vishay General Semiconductor 1000 45 Forward Power Dissipation (W) TA = 150 °C Instantaneous Reverse Current (μA) 50 40 35 30 25 20 15 10 5 0 100 TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 0.01 0 5 10 15 20 25 10 Average Forward Current ( A ) Fig. 3 - Forward Power Dissipation Junction Capacitance (pF) Instantaneous Forward Current (A) 40 50 60 70 1000 TA = 150 °C 10 TA = 125 °C TA = 25 °C TA = 100 °C 0.1 0.2 30 80 90 100 Fig. 5 - Typical Reverse Characteristics Per Diode 100 1 20 Percent of Rated Peak Reverse Voltage (%) TJ = 25 °C f = 1 MHz Vstg = 50 mVP-P 100 10 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 Document Number: 89393 Revision: 20-Dec-10 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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