PDF Data Sheet Rev. PrA

Preliminary Technical Data
Ultralow Power Energy Harvester PMU
with MPPT and Charge Management
ADP5091/ADP5092
FEATURES
PGND
TYPICAL APPLICATION CIRCUIT
AGND
Boost regulator with maximum power point tracking (MPPT)
with dynamic sensing or none-sensing mode
Hysteresis mode for best ultra light load efficiency
450 nA ultralow quiescent current (CBP ≥ MINOP)
360 nA ultralow quiescent current (CBP < MINOP)
Input voltage operation range from 80 mV to 3.3 V
Fast cold start from 380 mV (typical) with charge pump
Programmable shutdown point on MINOP pin based on
input open circuit voltage (OCV)
150mA regulated output from 1.5V to 3.6V
Programmable voltage monitor (2 V to 5.2 V) to support
charging storage elements
Optional BACK_UP power path management
RF transmission friendly to shut down switcher temporarily
via micro-controller (MCU) communication
APPLICATIONS
Photovoltaic (PV) cell energy harvesting
TEG energy harvesting
Industrial monitoring
Self-powered wireless sensor devices
Portable and wearable devices with energy harvesting
Figure 1.
GENERAL DESCRIPTION
The ADP5091/92 is an intelligent integrated energy harvesting
nano-powered management solution that converts dc power
from PV cells or thermoelectric generators (TEGs).The device
charges storage elements such as rechargeable Li-Ion batteries,
thin film batteries, super capacitors, or conventional capacitors,
and powers up small electronic devices and battery-free systems.
The ADP5091/92 provides efficient conversion of the harvested
limited power from a 16 μW to 600 mW range with sub-μW
operation losses. With the internal cold-start circuit, the regulator
can start operating at an input voltage as low as 380 mV. After
cold startup, the regulator is functional at an input voltage range
of 80 mV to 3.3 V. An additional 150mA regulated output can
be programmed by an external resistor divide or VID pin.
By sensing the input voltage, the control loop keeps the input
voltage ripple in a fixed range to maintain stable dc-to-dc boost
conversion. The OCV dynamic sensing mode and none-sensing
mode both programming regulation points of the input voltage
allow extraction of the highest possible energy from the
harvester. A programmable minimum operation threshold
Rev. PrA
(MINOP) enables boost shutdown during a low light condition.
As a low light indicator for microprocessor, the LLD is the
MIONP comparator output. In addition, the DIS_SW pin can
temporarily shut down the boost regulator and is RF
transmission friendly.
The charging control function of ADP5091/92 protects
rechargeable energy storage, which is achieved by monitoring
the battery voltage with programmable charging termination
voltage and shutdown discharging voltage. In addition, a
programmable PGOOD flag with programmable hysteresis
monitors the SYS voltage.
An optional primary cell battery can be connected and managed
by an integrated power path management control block that is
programmable to switch the power source from the energy
harvester, rechargeable battery, and primary cell battery.
The ADP5091/92 is available in a 24-lead LFCSP and is rated
for a −40°C to +125°C junction temperature range.
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Technical Support
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ADP5091/92
Preliminary Technical Data
TABLE OF CONTENTS
Features .............................................................................................. 1 ESD Caution...................................................................................6 Applications ....................................................................................... 1 Pin Configuration and Function Descriptions..............................7 Typical Application Circuit ............................................................. 1 Detailed Functional Block Diagram ...............................................9 General Description ......................................................................... 1 Typical Application Circuits ......................................................... 10 Specifications..................................................................................... 3 Factory Programmable Options ................................................... 12 Regulated Output Specifications ................................................ 4 Outline Dimensions ....................................................................... 13 Absolute Maximum Ratings ............................................................ 6 Ordering Guide TBD ................................................................. 13 Thermal Resistance ...................................................................... 6 Rev. PrA | Page 2 of 13
Preliminary Technical Data
ADP5091/92
SPECIFICATIONS
VIN = 1.2 V, VSYS =VBAT = 3V, TJ = -40°C to 125°C for minimum/maximum specifications and TA =25°C for typical specifications, unless
otherwise noted. External components L = 22 μH, CIN = 4.7 μF, CSYS= 4.7 μF.
Table 1.
Parameter
Symbol
QUIESCENT CURRENT
Operating Quiescent Current of SYS Pin
IQ_SYS
Test Conditions/Comments
Min
Typ
Max
Unit
REG_D0=low, REG_D1=low
450
nA
REG_D0=high, REG_D1= low
488
nA
REG_D0= low, REG_D1= high
520
nA
REG_D0= high, REG_D1= high
500
nA
IIQ_SLEEP_SYS
REG_D0= low, REG_D1= low
360
nA
VIN_COLD
PIN_COLD
VSYS_TH
VSYS_HYS
VSYS = 0 V, 0°C < TA < 85°C
380
16
1.93
125
VIN
PIN
VSYS_CHG
VSYS_CHG_HYS
Cold-start completed
Cold-start completed, VIN = 3 V
IIN_PEAK
Factory trim, 1 bit (200mA, 300mA)
Low-Side Switch on Resistance
High-Side Switch on Resistance
SYS Switch on Resistance
DIS_SW High Voltage
DIS_SW Low Voltage
DIS_SW Delay
VIN CONTROL AND MINOP
VIN Open Circuit Voltage Sampling
Cycle
VIN Open Circuit Voltage Sampling Time
MINOP Bias Current
MINOP Operation Voltage Range of
Dynamic MPPT sensing Mode
MINOP Threshold of MPPT Nonesensing Mode
MPPT Bias Current of MPPT Nonesensing Mode
LLD Pull High Resistor (ADP5091/92
Only)
LLD Pull Low Resistor (ADP5091/92
Only)
LLD High Voltage
RLS_DS_ON
RHS_DS_ON
RSYS_DS_ON
DIS_SWHIGH
DIS_SWLOW
tDIS_DELAY
Pin-to-pin measurement
Pin-to-pin measurement
TVOC_CYCLE
Factory trim, 2 bit (4 s , 8 s, 16 s, 32 s)
Leakage Current at CBP Pin
ENERGY STORAGE MANAGEMENT
Internal Voltage of Charging BAT
Internal Reference Voltage
ICBP_LEAK
(VIN > VCBP ≥ VMINOP)
Sleeping Quiescent Current of SYS Pin
(VCBP < VMINOP)
COLD-START CIRCUIT
Minimum Input Voltage for Cold-Start
Minimum Input Power for Cold-Start
End of Cold-Start Operation Threshold
End of Cold-Start Operation Hysteresis
BOOST REGULATOR
Input Voltage Operation Range
Input Power Operation Range
SYS Threshold of Starting Charging BAT
SYS Hysteresis of Stopping Charging
BAT
Input Peak Current
1.8
0.1
440
2.03
3.3
600
V
mW
V
mV
300
400
TBD
TBD
0.70
1
mA
mA
Ω
Ω
Ω
V
V
μs
16
s
2.1
150
200
300
0.5
1
0.48
1
0.5
TVOC_SAMPL
IMINOP
VMINOP_DSM
1.45
256
2
2.55
1.5
1.8
VMINOP_NSM
IMPPT
1.45
2
0.98
Rev. PrA | Page 3 of 13
ms
μA
V
V
2.55
μA
11.4
kΩ
11.4
kΩ
VLLD_IH
VCHR
VREF
mV
μW
V
mV
10
REG_O
UT
100
pA
2.2
1
1.02
V
V
ADP5091/ADP5092
Parameter
Battery Stop Discharging Threshold
Battery Stop Discharging Hysteresis
Resistor
Battery Terminal Charging Threshold
Battery Terminal Charging Hysteresis
PGOOD Rising Threshold at SYS Pin
PGOOD Pull High Resistor
PGOOD Pull Low Resistor
PGOOD High Voltage
Battery Switches on Resistance
Battery Source Current
Leakage Current at BAT Pin
BACKUP POWER PATH
Turning off BACK_UP Switch Threshold
Turning off BACK_UP Switch Hysteresis
Resistor
BACK_UP and BAT Comparator Offset
BACK_UP and BAT Comparator Hysteresis
BACK_UP Current Capability
Leakage Current at BACK_UP Pin
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Preliminary Technical Data
Symbol
VBAT_SD
RBAT_SD_HYS
Test Conditions/Comments
VBAT_TERM
VBAT_TERM_HYS
VSYS_PG
Min
2.0
65
Typ
Max
VBAT_TERM
150
Unit
V
kΩ
5.2
3.7
VBAT_TERM
15
0.5
SYS
TBD
1
50
20
V
%
V
kΩ
kΩ
V
Ω
A
nA
nA
103.5
VBAT_TERM
150
V
kΩ
185
75
400
6
250
100
520
18
mV
mV
mA
nA
103.5
2.2
3
VBAT_SD
11.4
11.4
VPGOOD_IH
RBAT_SW_ON
IBAT
IBAT_LEAK
Pin-to-pin measurement
TBD
VBAT = 2 V, VBAT_SD = 2.2 V, VSYS =2 V
VBAT = 3.3 V, VBAT_SD = 2.2 V, VSYS =0 V
VBK_TF
RBK_TF_HYS
2.0
65
VBKP_OFFSET
VBAT_HYS
IBKP
IBKP_LEAK
VSYS ≥ VSYS_TH
VSYS ≥ VSYS_TH
VSYS ≥ VSYS_TH
VBACK_UP = VSYS = VBAT = 3 V
TSHDN
THYS
VSYS ≥ VSYS_TH
135
55
0.6
135
15
°C
°C
REGULATED OUTPUT SPECIFICATIONS
VIN = 1.2 V, VSYS =VBAT = 3 V, VREG_OUT=2V, L = 22 μH, CIN = 4.7 μF, CSYS= 4.7 uF, CREG_OUT=4.7 uF; TJ = -40°C to 125°C for
minimum/maximum specifications and TA =25°C for typical specifications, unless otherwise noted.
Table 2.
Parameter
REGULATED OUTPUT
Output Options by VID Control
REG_OUT OF BOOST MODE
REG_OUT Wake Threshold
REG_OUT Sleep Threshold
High-Side Switches on Resistance
Current Limit Threshold of Boost Mode
REG_OUT OF LDO MODE
REG_OUT Accuracy
Symbol
Min
VREG_OUT
1.5
VREG_WAKE
VREG_SLEEP
RBST_DS_ON
VREG_BST_LIM
1.005
1.015
VREG_LDO
Adjustable REG_OUT Accuracy
VREG_LDO_ADJ
REG_OUT Dropout
Current Limit Threshold of LDO Mode
Output Noise
VREG_ DROP
IREG_LIM
OUTNOISE
Power Supply Rejection Ratio
PSRR
REG_D0 and REG_D1
Input Logic High
Test Conditions/Comments
IOUT = 10 mA
0 μA < IOUT < 150 mA, VSYS = (VREG_OUT
+ 0.5 V)
IOUT = 10 mA
0 μA < IOUT < 150 mA, VSYS = (VREG_OUT
+ 0.5 V)
IOUT = 150 mA
VSYS ≥ VSYS_TH
10Hz to 100kHz
0.99
0.97
1
1
220
100
320
100
65
50
1.2
Rev. PrA | Page 4 of 13
1.020
1.030
1
100
-1
-3.5
100Hz
1kHz
VREG_DX_IH
Typ
Max
Unit
3.6
V
1.036
1.046
TBD
TBD
V
V
Ω
mA
1
3.5
%
%
1.01
1.03
V
V
mV
mA
uV
rms
dB
dB
V
Preliminary Technical Data
Parameter
Input Logic Low
Input Leakage Current
REG_GOOD (ADP5092 Only)
REG_GOOD Rising Threshold
REG_GOOD Hysteresis
REG_GOOD Pull High Resistor
REG_GOOD Pull Low Resistor
REG_GOOD High Voltage
ADP5091/92
Symbol
VREG_DX_IL
IREG_DX_LEAK
Test Conditions/Comments
VREG_GOOD
VREG_GOOD_HYS
VREG_GOOD_IH
Min
Typ
Max
0.4
20
Unit
V
nA
90
5
11.4
11.4
%
%
kΩ
kΩ
REG_O
UT
Rev. PrA | Page 5 of 13
ADP5091/ADP5092
Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 3.
Parameter
VIN, MPPT, CBP, MINOP
DIS_SW, TERM, SETPG,SETSD,
SETBK, PGOOD, PG_HYS, REF,
REG_D0, VID, REG_D1, LLD to AGND
SW, SYS, BAT, BACK_UP, REG_OUT,
REG_FB to PGND
PGND to AGND
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Rating
−0.3 V to +3.6 V
−0.3 V to +6.0 V
Table 4
Package Type
24-Lead LFCSP Package
−0.3 V to +0.3 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. PrA | Page 6 of 13
θJA
TBD
θJC
TBD
Unit
Preliminary Technical Data
ADP5091/92
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. ADP5091 LFCSP Package Pin Configuration
Figure 3. ADP5092 LFCSP Package Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
1
2
3
Mnemonic
REF
SETSD
SETBK
4
TERM
5
6
7
8
SETPG
SETHYST
AGND
CBP
9
MPPT
10
VIN
11
LLD
12
13
REG_GOOD
PGND
SW
14
15
16
BAT
REG_FB
SYS
17
18
19
20
21
REG_OUT
BACK_UP
PGOOD
VID
MINOP
Description
Provides Voltage Reference for the SETSD, SETPG, SETBK and TERM Pins.
Shutdown Setting. This pin sets the shutdown discharging voltage based on the BAT node voltage level.
Sets BACK_UP disabled threshold monitoring BAT voltage. Connect this pin to AGND without BACK_UP
storage element.
Termination Charging Voltage. This pin sets the termination charging voltage based on the BAT node voltage
level.
Sets Power Good Voltage Based on SYS Node Voltage Level.
Sets PGOOD Falling Hysteresis. Resistor divider input for PGOOD Falling Hysteresis.
Analog Ground.
Capacitor bypass. Samples and Holds the Maximum Power Point Level. Connect a 10 nF capacitor from this
pin to AGND. When MPPT is disabled, tie CBP to an external reference that is lower than VIN. Analog Ground.
Maximum Power Point Tracking. This pin sets the maximum power point tracking level for different energy
harvesters. Place a resistor through AGND to set MPPT voltage at MINOP voltage higher than the threshold
of MPPT None-sensing Mode.
Input Supply from Energy Harvester Source. Connect at least a 4.7 μF capacitor as close as possible
between this pin and PGND.
Low light density indicator to MCU. LLD pulls high at the MINOP voltage higher than CBP voltage. ADP5091
only.
Regulated Output Power Good. ADP5092 only.
Power Ground.
Switching Node for Inductive Boost Regulator with Connection to External Inductor. Connect a 22 μH
inductor between this pin and VIN.
Places Rechargeable Battery or Super Cap as a Storage for SYS Output Supply.
Regulated Output Feedback Voltage Sense Input. Connect to a resistor divider from REG_OUT.
Output Supply to System Load. Connect at least a 4.7 μF capacitor as close as possible between this pin and
PGND.
Regulated output. Connect at least a 1 μF capacitor as close as possible between this pin and PGND.
Optional Input Supply from the Backup Primary Battery Cell.
Output Supply to MCU. Maintains a pulled high signal when SYS is higher than SETPG threshold.
Voltage Configuration Pin of REG_OUT. Set up to 8 different REG_OUT tied low through a resistor to AGND.
Minimum Operating Power. Place a resistor on this pin to set the minimum operating input voltage level.
The boost regulator starts switching when the CBP voltage exceeds the MINOP voltage. When MINOP
voltage is above the threshold of MPPT None-sensing Mode, IC operates at a fixed MPPT ratio. Connect this
pin through AGND to disable MINOP function.
Rev. PrA | Page 7 of 13
ADP5091/ADP5092
Pin No.
22
23
24
Mnemonic
DIS_SW
REG_D1
REG_D0
EPAD
Preliminary Technical Data
Description
Control Signal from MCU or RF Transceiver to Stop Switching Boost Charger.
Regulated output working mode set.
Regulated output working mode set.
Exposed Pad. The exposed pad must be connected to AGND.
Rev. PrA | Page 8 of 13
Preliminary Technical Data
ADP5091/92
DETAILED FUNCTIONAL BLOCK DIAGRAM
SYS
LDO
REG_SWITCHES
CSYS
REG_OUT
BACK_UP
+
REG_FB
REG_D0
REG_D1
HYSTERESIS
REGULATOR
AND LDO
BACK_UP SWITCHES
L
SW
BAT
BSTO
+
-
BAT SWITCHES
HS
+
-
BKB
SYS SWITCH
VID
PHOTOVOLTAIC
CELL
BACK_UP
CONTROL
CIN
SYS
VIN
LS
COLD START
CHARGE PUMP
BKB
BAT
SDB
REF
BAT
ROC2
MPPT
MPPT
CONTROL
TERM_REF
ROC1
CBP
BOOST
CONTROL
MINOP
EN_BST
CHARGE
CONTROL
AND
POWER PATH
MANAGEMENT
SETSD
SDB
PGOOD
PG
PGB
DIS_SW
BKB
TERM_REF
TRM
2R
R
PGND
AGND
Figure 4. Detailed Functional Block Diagram
Rev. PrA | Page 9 of 13
PGB
SETHYST
TERM
CONTROL
VREF
CLK
STEPG
VREF
LLD
BIAS REFERENCE
AND OSCILLATOR
PG
BAT
STEBK
TERM
RSYS
ADP5091/ADP5092
Preliminary Technical Data
TYPICAL APPLICATION CIRCUITS
Figure 5. The ADP5091/92-Based Energy Harvester Wireless Sensor Application with Solarprint 0.5 V 450 μa PV-Cell as the Harvesting Energy Source,
Shoei Electronics Polyacene Coin Type Capacitor PAS409HR as the Harvested Energy Storage,
and Panasonic Primary Li-Ion Coin Cell CR2032 as the Backup Battery.
Figure 6. The ADP5091/92-Based Energy Harvester Circuit with a Thermo Electric Generator as the Harvesting Energy Source,
Shoei Electronics Polyacene Coin Type Capacitor Pas409hr as the Harvested Energy Storage,
and Panasonic Primary Li-Ion Coin Cell Cr2032 as the Backup Battery.
Rev. PrA | Page 10 of 13
Preliminary Technical Data
ADP5091/ADP5092
Figure 7. The ADP5091/92-Based Energy Harvester Circuit with a Piezoelectric Generator as the Harvesting Energy Source,
Shoei Electronics Polyacene Coin Type Capacitor Pas409hr as the Harvested Energy Storage,
and Panasonic Primary Li-Ion Coin Cell Cr2032 as the Backup Battery.
Figure 8. PGOOD Function Determines the Time to Enable the System Load
Rev. PrA | Page 11 of 13
ADP5091/ADP5092
Preliminary Technical Data
FACTORY PROGRAMMABLE OPTIONS
To order a device with options other than the default options, contact your local Analog Devices sales or distribution representative.
Table 6. Input Current Limit Options
Option
Option 0
Option 1
Description
200 mA (default)
300 mA
Table 7. VIN Open Circuit Voltage Sampling Cycle Options
Option
Option 0
Option 1
Option 2
Option 3
Description
4 s (default)
8s
16 s
32 s
Rev. PrA | Page 12 of 13
Preliminary Technical Data
ADP5091/ADP5092
OUTLINE DIMENSIONS
Figure 9. 24-Lead Lead Frame Chip Scale Package [LFCSP-WQ]
4 mm × 4 mm Body, Very Very Thin Quad
(CP-24-10)
Dimensions shown in millimeters
ORDERING GUIDE TBD
Model1
ADP5091ACPZ-R7
ADP5092ACPZ-R7
ADP5091-EVALZ
ADP5092-EVALZ
1
Temperature Range
−40°C to + 125°C
−40°C to + 125°C
Package Description
24-Lead LFCSP_WQ
24-Lead LFCSP_WQ
Evaluation Board
Evaluation Board
Package Option
CP-24-10
CP-24-10
Z = RoHS Compliant Part.
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR14145-0-1/16(PrA)
Rev. PrA | Page 13 of 13