MPLAD7.5KP10A(e3) – MPLAD7.5KP48CA(e3) Available 7.5 kW, Unidirectional and Bidirectional TVS Protection Device High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These 7.5 kW rated transient voltage suppressors (TVS) in a surface mount PLAD package are provided with design features to minimize thermal resistance and cumulative heating. These devices have the ability to clamp dangerous high voltage, short term transients such as those produced by electrostatic discharge, radiated RFI, inductive load dumps, and the secondary effects of lightning strikes before they reach sensitive component regions of a circuit. Typical applications include lightning and automotive load dump protection. They are particularly effective at meeting the multi-stroke lightning standard RTCA DO160, section 22 for aircraft design. The all-metal bottom of this space-efficient, low profile package provides a very low thermal impedance path for heat to escape to the mounting substrate, keeping the junction temperature low. The PLAD7.5KP is offered with standoff voltages (Vwm) from 10 to 48 volts in either unidirectional or bidirectional versions. For more information on PLAD packaged products and our broad range of TVS solutions, please see our website. Tested in accordance with the requirements of AEC-Q101 Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • • • • Available in both unidirectional and bidirectional construction (bidirectional with CA suffix) High-reliable, with wafer fabrication and assembly lot traceability All parts 100% surge tested Low profile surface mount package Optional upscreening is available with various screening and conformance inspection options based on MIL-PRF-19500. Refer to Hi-Rel Non-Hermetic Products brochure on our web site for more details on the screening options Suppresses transients up to 7,500 W @ 10/1000 μs (see Figure 1) Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020 3σ lot norm screening performed on standby current (ID) RoHS compliant (2002/95/EC) devices available Halogen free (IEC 61249-2-21) mini-PLAD (The cathode is the heatsink under the body of this device.) APPLICATIONS / BENEFITS • • • • • • • • • • • • Protection from switching transients and induced RF Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4 Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance: Class 1,2,3,4,5: MPLAD7.5KP10A to 48CA Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance: Class 1,2,3,4: MPLAD7.5KP10A to 48CA Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance: Class 2,3: MPLAD7.5KP10A to 48CA Class 4: MPLAD7.5KP10A to 26CA Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 25 ºC)*: Level 1,2,3,4,5: MPLAD7.5KP10A to 48CA Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs at 25 ºC)*: Level 1, 2, 3: MPLAD7.5KP10A to 48CA Level 4: MPLAD7.5KP10A to 14CA Longer transient pulse width capability if well heat sunk for automotive load dump IPP rating of 97 amps to 441 amps VWM rating of 10 volts to 48 volts V(BR)(min) range of 11.1 volts to 53.3 volts VC(MAX) rating of 17 volts to 77.4 volts *See MicroNote 132 for further temperature derating selection. RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 6 MPLAD7.5KP10A(e3) – MPLAD7.5KP48CA(e3) o MAXIMUM RATINGS @ 25 C unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Peak Pulse Power @ 10/1000 µs (2) Value Unit -55 to +150 50 1.5 7,500 ºC/W ºC/W ºC/W W Unidirectional Bidirectional tclamping (0 volts to V(BR) min) Forward Clamping Voltage @ 400 Amps (3) Forward Surge Current Solder Temperature @ 10 s (5) Rated Average Power dissipation Notes: 1. 2. 3. 4. 5. Symbol TJ and TSTG RӨJA RӨJC PPP (3) <100 <5 2.5 500 260 (1) 2.5 (4) 33.3 VFS IFSM TA = 25 °C TC = 100 °C PM(AV) ps ns V A ºC W W When mounted on FR4 PC board with recommended mounting pad (see pad layout). Also see Figures 1 and 2. With impulse repetition rate (duty factor) of 0.05% or less. At 8.3 ms half-sine wave (unidirectional devices only). Case temperature controlled on heat sink as specified. See MicroNote 134 for derating PPP when also applying steady-state power. MECHANICAL and PACKAGING • • • • • CASE: Epoxy, meets UL94V-0 TERMINALS: Tin/lead or matte-tin (fully RoHS compliant) plating MARKING: Part number DELIVERY option: Tape and reel (13 inch) See Package Dimensions on last page. PART NOMENCLATURE M PLAD 7.5K P 10 CA Reliability Level* M MA MX MXL *(see Hi-Rel Non-Hermetic Product Portfolio) (e3) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Polarity A = Unidirectional CA = Bidirectional Reverse Standoff Voltage Package Designation Plastic PPP Rating (W) RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 2 of 6 MPLAD7.5KP10A(e3) – MPLAD7.5KP48CA(e3) SYMBOLS & DEFINITIONS Definition Symbol αV(BR) I(BR) ID IPP V(BR) VC VWM Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Current: The current used for measuring Breakdown Voltage V(BR). Standby Current: The current through the device at rated stand-off voltage. Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (IPP) for a specified waveform. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated DEVICE* MPLAD7.5KP10A(e3) MPLAD7.5KP11A(e3) MPLAD7.5KP12A(e3) MPLAD7.5KP13A(e3) MPLAD7.5KP14A(e3) MPLAD7.5KP15A(e3) MPLAD7.5KP16A(e3) MPLAD7.5KP17A(e3) MPLAD7.5KP18A(e3) MPLAD7.5KP20A(e3) MPLAD7.5KP22A(e3) MPLAD7.5KP24A(e3) MPLAD7.5KP26A(e3) MPLAD7.5KP28A(e3) MPLAD7.5KP30A(e3) MPLAD7.5KP33A(e3) MPLAD7.5KP36A(e3) MPLAD7.5KP40A(e3) MPLAD7.5KP43A(e3) MPLAD7.5KP45A(e3) MPLAD7.5KP48A(e3) REVERSE STANDOFF VOLTAGE VWM Volts 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 BREAKDOWN VOLTAGE V(BR) V(BR) @ Volts 11.1 - 12.3 12.2 - 13.5 13.3 - 14.7 14.4 - 15.9 15.6 - 17.2 16.7 - 18.5 17.8 - 19.7 18.9 - 20.9 20.0 - 22.1 22.2 - 24.5 24.4 - 26.9 26.7 - 29.5 28.9 - 31.9 31.1 - 34.4 33.3 - 36.8 36.7 - 40.6 40.0 - 44.2 44.4 - 49.1 47.8 - 52.8 50.0 – 55.3 53.3 – 58.9 I(BR) mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAXIMUM CLAMPING VOLTAGE MAXIMUM STANDBY CURRENT ID @ VWM µA MAXIMUM PEAK PULSE CURRENT (FIG. 2) IPP Amps MAXIMUM TEMPERATURE COEFFICIENT OF V(BR) αV(BR) mV/°C VC @ IPP Volts 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.5 48.4 53.3 58.1 64.5 69.4 72.7 77.4 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 441 412 377 349 323 307 288 272 257 231 211 193 178 165 155 141 129 116 108 103 97 9 10 11 12 13 15 16 18 19 22 24 27 29 30 35 38 40 45 49 51 54 * See part nomenclature for additional screening prefixes. RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 3 of 6 MPLAD7.5KP10A(e3) – MPLAD7.5KP48CA(e3) PPP – Peak Pulse Power – kW GRAPHS tp – Pulse Time – sec IPP Peak Pulse Current - % IPP FIGURE 1 Peak Pulse Power vs. Pulse Time (to 50% of exponentially decaying pulse) Test waveform parameters: tr = 10 µs, tp = 1000 µs FIGURE 2 Pulse Waveform RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 4 of 6 MPLAD7.5KP10A(e3) – MPLAD7.5KP48CA(e3) PPP Peak Pulse Power - % PPP GRAPHS (continued) TL Lead Temperature ºC FIGURE 3 Derating Curve RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 5 of 6 MPLAD7.5KP10A(e3) – MPLAD7.5KP48CA(e3) PACKAGE DIMENSIONS Ref. A1 A2 B C D G H J Dimensions Millimeters Max Min Max 0.353 8.56 8.97 0.293 7.04 7.44 0.133 2.97 3.38 0.452 11.07 11.48 0.108 2.34 2.74 0.078 1.57 1.98 0.038 0.56 0.96 0.012 0.20 0.30 Inch Min 0.337 0.277 0.117 0.436 0.092 0.062 0.022 0.008 PAD LAYOUT Ref. A B C D RF01084, Rev B (24/6/15) Inch Typical 0.353 0.117 0.078 0.033 ©2015 Microsemi Corporation Dimensions Millimeters Typical 8.97 2.97 1.98 0.84 Page 6 of 6