SiZ910DT-DS

SPICE Device Model SiZ910DT
www.vishay.com
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
DESCRIPTION
CHARACTERISTICS
The attached SPICE model describes the typical electrical
characteristics of the n-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to 125 °C temperature ranges under the pulsed 0 V to 10 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
S1/D2
D1
D
D
R1
3
M2
G
G1
RG
G2
CGS
R1
3
M2
DBD
M1
G
CGS
DBD
M1
S
S
S2
Note
• This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer
to the appropriate datasheet of the same number for guaranteed specification limits.
S12-1635-Rev. A, 16-Jul-12
1
Document Number: 63190
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model SiZ910DT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VGS(th)
VDS = VGS, ID = 250 μA
CHANNEL
SIMULATED MEASURED
DATA
DATA
UNIT
Static
Gate-Source Threshold Voltage
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
gfs
VDS = 10 V, ID = 20 A
Diode Forward Voltage
VSD
IS = 10 A
Input Capacitance
Ciss
N-Channel
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Coss
Ch-1
1.5
-
Ch-2
1.4
-
Ch-1
0.0048
0.0048
Ch-2
0.0024
0.0025
Ch-1
0.0060
0.0060
Ch-2
0.0029
0.0029
Ch-1
77
94
Ch-2
106
140
Ch-1
0.80
0.80
Ch-2
0.80
0.80
Ch-1
1500
1500
Ch-2
3590
3600
Ch-1
300
285
Ch-2
669
660
Ch-1
100
125
Ch-2
309
305
Ch-1
26
26
V

S
V
Dynamicb
Reverse Transfer Capacitance
Crss
P-Channel
VDS = - 15 V, VGS = 0 V,
f= 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
Total Gate Charge
Qg
Channel 1
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Gate-Source Charge
Qgs
Channel 2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Gate-Drain Charge
Qgd
Ch-2
60
60
Ch-1
13
12.5
Ch-2
31
29
Ch-1
4.7
4.7
Ch-2
10
10
Ch-1
4
4
Ch-2
9.5
9.5
pF
nC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
S12-1635-Rev. A, 16-Jul-12
2
Document Number: 63190
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model SiZ910DT
www.vishay.com
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
Channel 1
100
15
TJ = 125 °C
VGS = 10 V, 7 V, 6 V, 5 V, 4 V
12
60
ID - Drain Current (A)
ID - Drain Current (A)
80
VGS = 3 V
40
9
TJ = - 55 °C
6
20
3
0
0
TJ = 25 °C
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
0.008
2000
0.007
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VDS - Drain-to-Source Voltage (V)
VGS = 4.5 V
0.006
0.005
Ciss
1200
800
VGS = 10 V
400
0.004
Coss
Crss
0
0.003
0
20
40
60
80
0
100
5
ID - Drain Current (A)
15
20
25
30
VDS - Drain-to-Source Voltage (V)
10
100
ID = 20 A
VDS = 15 V
8
TJ = 150 °C
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
10
6
4
TJ = 25 °C
10
1
2
0.1
0
0
6
12
18
24
0
30
Qg - Total Gate Charge (nC)
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
Note
• Dots and squares represent measured data.
S12-1635-Rev. A, 16-Jul-12
3
Document Number: 63190
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model SiZ910DT
www.vishay.com
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
Channel 2
100
1.5
VGS = 10 V, 7 V, 6 V, 5 V, 4 V
TJ = 125 °C
1.2
ID - Drain Current (A)
ID - Drain Current (A)
80
60
VGS = 3 V
40
20
0.9
TJ = - 55 °C
0.6
0.3
TJ = 25 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
0.0032
1.5
2.0
2.5
3.0
5000
0.0030
4000
C - Capacitance (pF)
VGS = 4.5 V
RDS(on) - On-Resistance (Ω)
1.0
VGS - Gate-to-Source Voltage (V)
0.0028
0.0026
0.0024
VGS = 10 V
Ciss
3000
2000
1000
0.0022
Coss
Crss
0.0020
0
0
20
40
60
80
100
0
120
5
ID - Drain Current (A)
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
100
10
TJ = 150 °C
8
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
VDS = 15 V
6
4
TJ = 25 °C
10
1
2
0.1
0
0
10
20
30
40
50
60
70
0
Qg - Total Gate Charge (nC)
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
Note
• Dots and squares represent measured data.
S12-1635-Rev. A, 16-Jul-12
4
Document Number: 63190
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000