SPICE Device Model SiZ910DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics SUBCIRCUIT MODEL SCHEMATIC S1/D2 D1 D D R1 3 M2 G G1 RG G2 CGS R1 3 M2 DBD M1 G CGS DBD M1 S S S2 Note • This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. S12-1635-Rev. A, 16-Jul-12 1 Document Number: 63190 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiZ910DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS VGS(th) VDS = VGS, ID = 250 μA CHANNEL SIMULATED MEASURED DATA DATA UNIT Static Gate-Source Threshold Voltage VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 10 V, ID = 20 A Diode Forward Voltage VSD IS = 10 A Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz Output Capacitance Coss Ch-1 1.5 - Ch-2 1.4 - Ch-1 0.0048 0.0048 Ch-2 0.0024 0.0025 Ch-1 0.0060 0.0060 Ch-2 0.0029 0.0029 Ch-1 77 94 Ch-2 106 140 Ch-1 0.80 0.80 Ch-2 0.80 0.80 Ch-1 1500 1500 Ch-2 3590 3600 Ch-1 300 285 Ch-2 669 660 Ch-1 100 125 Ch-2 309 305 Ch-1 26 26 V S V Dynamicb Reverse Transfer Capacitance Crss P-Channel VDS = - 15 V, VGS = 0 V, f= 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A Total Gate Charge Qg Channel 1 VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate-Source Charge Qgs Channel 2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate-Drain Charge Qgd Ch-2 60 60 Ch-1 13 12.5 Ch-2 31 29 Ch-1 4.7 4.7 Ch-2 10 10 Ch-1 4 4 Ch-2 9.5 9.5 pF nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. S12-1635-Rev. A, 16-Jul-12 2 Document Number: 63190 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiZ910DT www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted) Channel 1 100 15 TJ = 125 °C VGS = 10 V, 7 V, 6 V, 5 V, 4 V 12 60 ID - Drain Current (A) ID - Drain Current (A) 80 VGS = 3 V 40 9 TJ = - 55 °C 6 20 3 0 0 TJ = 25 °C 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 0.008 2000 0.007 1600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VDS - Drain-to-Source Voltage (V) VGS = 4.5 V 0.006 0.005 Ciss 1200 800 VGS = 10 V 400 0.004 Coss Crss 0 0.003 0 20 40 60 80 0 100 5 ID - Drain Current (A) 15 20 25 30 VDS - Drain-to-Source Voltage (V) 10 100 ID = 20 A VDS = 15 V 8 TJ = 150 °C IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 10 6 4 TJ = 25 °C 10 1 2 0.1 0 0 6 12 18 24 0 30 Qg - Total Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Note • Dots and squares represent measured data. S12-1635-Rev. A, 16-Jul-12 3 Document Number: 63190 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiZ910DT www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted) Channel 2 100 1.5 VGS = 10 V, 7 V, 6 V, 5 V, 4 V TJ = 125 °C 1.2 ID - Drain Current (A) ID - Drain Current (A) 80 60 VGS = 3 V 40 20 0.9 TJ = - 55 °C 0.6 0.3 TJ = 25 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 0.0032 1.5 2.0 2.5 3.0 5000 0.0030 4000 C - Capacitance (pF) VGS = 4.5 V RDS(on) - On-Resistance (Ω) 1.0 VGS - Gate-to-Source Voltage (V) 0.0028 0.0026 0.0024 VGS = 10 V Ciss 3000 2000 1000 0.0022 Coss Crss 0.0020 0 0 20 40 60 80 100 0 120 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 100 10 TJ = 150 °C 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 20 A VDS = 15 V 6 4 TJ = 25 °C 10 1 2 0.1 0 0 10 20 30 40 50 60 70 0 Qg - Total Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Note • Dots and squares represent measured data. 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