SDP10S30, SDB10S30 SDT10S30 Preliminary data Silicon Carbide Schottky Diode Revolutionary semiconductor Product Summary V VRRM 300 material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on P-TO220-2-2. the switching behavior Qc 23 nC IF 10 A P-TO220-3.SMD P-TO220-3-1. No forward recovery Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 SDP10S30 P-TO220-3-1. Q67040-S4372 D10S30 n.c. C A SDB10S30 P-TO220-3.SMD Q67040-S4373 D10S30 n.c. C A SDT10S30 P-TO220-2-2. D10S30 C A Q67040-S4447 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF 10 RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave IFSM Value Unit A 36 TC=25°C, tp =10ms IFRM 45 IFMAX 100 i 2 t value, TC=25°C, tp=10ms 2 i dt 6.5 A²s Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp =10µs, TC=25°C Page 1 2001-12-04 Preliminary data SDP10S30, SDB10S30 SDT10S30 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 2.3 P-TO263-3-2: @ min. footprint - - 62 P-TO263-3-2: @ 6 cm2 cooling area 1) - 35 - Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF =10A, Tj=25°C - 1.5 1.7 IF =10A, Tj=150°C - 1.5 1.9 Reverse current µA IR VR =300V, Tj =25°C - 15 200 VR =300V, Tj =150°C - 20 1000 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-12-04 Preliminary data SDP10S30, SDB10S30 SDT10S30 Electrical Characteristics,at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 23 - nC trr - n.a. - ns AC Characteristics Total capacitive charge1) VR =200V, IF =10A, diF /dt=-200A/µs, Tj =150°C Switching time2) VR =200V, IF =10A, diF /dt=-200A/µs, Tj =150°C Total capacitance C pF VR =0V, TC =25°C, f=1MHz - 600 - VR =150V, TC =25°C, f=1MHz - 55 - VR =300V, TC =25°C, f=1MHz - 40 - Page 3 2001-12-04 SDP10S30, SDB10S30 SDT10S30 Preliminary data 1 Power dissipation 2 Diode forward current Ptot = f (TC ) IF = f (TC ) parameter: Tj 175 °C 11 70 W A 60 9 50 8 45 7 IF P tot 55 40 6 35 5 30 25 4 20 3 15 2 10 1 5 0 0 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF ) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF ) TC =100°C, d = tp/T 20 32 A W 16 P F(AV) 24 IF 14 12 10 20 d=1 d=0.5 d=0.2 d=0.1 16 -40°C 25°C 100°C 125°C 150°C 8 6 12 8 4 4 2 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2.2 V VF Page 4 0 0 2 4 6 8 10 12 14 18 A IF(AV) 2001-12-04 SDP10S30, SDB10S30 SDT10S30 Preliminary data 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance IR =f(VR) ZthJC = f (tp ) parameter : D = tp /T 10 1 10 2 µA SDP10S30 K/W 10 1 Z thJC 10 0 IR 10 0 10 -1 10 -1 D = 0.50 10 150°C 125°C 100°C 25°C 10 -2 0.20 0.10 0.05 10 10 -3 10 -4 50 -2 -3 single pulse 0.02 0.01 100 150 V 200 10 -4 -7 10 300 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VR 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(VR ) EC=f(VR ) parameter: TC = 25 °C, f = 1 MHz 2.5 450 pF µJ 350 C EC 300 1.5 250 200 1 150 100 0.5 50 0 0 10 10 1 10 2 3 10 V VR Page 5 0 0 50 100 150 200 V 300 VR 2001-12-04 Preliminary data SDP10S30, SDB10S30 SDT10S30 9 Typ. capacitive charge vs. current slope Qc =f(diF /dt) parameter: Tj = 150 °C 22 nC 18 IF*2 IF IF*0.5 Qc 16 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt Page 6 2001-12-04 SDP10S30, SDB10S30 SDT10S30 Preliminary data P-TO220-3-1 P-TO220-3-1 dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-220-3-45 (P-TO220SMD) dimensions [mm] symbol min A min max B 9.80 10.00 1.3 typ. 0.3858 0.3937 0.0512 typ. C 1.25 0.0492 D 0.95 1.15 2.54 typ. 0.0374 0.0453 0.1 typ. G 0.72 0.85 5.08 typ. 0.0283 0.0335 0.2 typ. H 4.30 4.50 0.1693 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M N 2.30 2.50 14.1 typ. 0.0906 0.0984 0.5551 typ. P 0.00 0.0000 Q R 3.30 3.90 8° max 0.1299 0.1535 8° max S 1.70 0.0669 T U 0.50 0.65 10.8 typ. 0.0197 0.0256 0.4252 typ. V 1.35 typ. 0.0532 typ. W 6.43 typ. 0.2532 typ. X 4.60 typ. 0.1811 typ. Y 9.40 typ. 0.3701 typ. Z 16.15 typ. 0.6358 typ. E F Page 7 [inch] max 1.75 0.20 2.50 0.0689 0.1772 0.0079 0.0984 2001-12-04 Preliminary data SDP10S30, SDB10S30 SDT10S30 MAX/MIN-dimensions are given in inches[mm] Page 8 2001-12-04 Preliminary data SDP10S30, SDB10S30 SDT10S30 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2001-12-04