IDB30E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage 2 • 175°C operating temperature • Easy paralleling 1 3 * RoHS compliant Type Package IDB30E60 PG-TO263-3-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D30E60 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM Continous forward current IF Value 600 V A TC=25°C 52.3 TC=90°C 34.9 Surge non repetitive forward current Unit I FSM 117 I FRM 81 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 142.9 TC=90°C 80.9 Operating and storage temperature Soldering temperature Tj , Tstg TS -55...+175 245 °C °C reflow soldering, MSL1 Rev.2.2 Page 1 2007-09-01 IDB30E60 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.05 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 2500 Forward voltage drop VF V IF=30A, T j=25°C - 1.5 2 IF=30A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page 2 2007-09-01 IDB30E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C - 126 - V R=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C - 171 - V R=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C - 178 - Peak reverse current A I rrm V R=400V, IF = 30A, diF/dt=1000A/µs, Tj =25°C - 19 - V R=400V, IF =30A, diF/dt=1000A/µs, T j=125°C - 22 - V R=400V, IF =30A, diF/dt=1000A/µs, T j=150°C - 24 - Reverse recovery charge nC Q rr V R=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C - 1100 - V R=400V, IF =30A, diF/dt=1000A/µs, T j=125°C - 1950 - V R=400V, IF =30A, diF/dt=1000A/µs, T j=150°C - 2150 - V R=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C - 4 - V R=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C - 4.6 - V R=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C - 4.8 - Reverse recovery softness factor Rev.2.2 S Page 3 2007-09-01 IDB30E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 55 150 W A 45 120 40 100 IF P tot 110 90 35 80 30 70 25 60 20 50 40 15 30 10 20 5 10 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2 90 V A 70 1.8 -55°C 25°C 100°C 150°C 1.7 VF IF 60 60A 1.6 50 30A 1.5 40 1.4 30 1.3 15A 20 1.2 10 0 0 1.1 0.5 1 1.5 1 -60 2.5 V VF Rev.2.2 Page 4 -20 20 60 100 160 °C Tj 2007-09-01 IDB30E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 500 2600 ns nC 60A 2200 60A 30A 15A 350 Q rr trr 400 2000 300 1800 250 1600 200 1400 150 1200 100 200 300 400 500 600 700 800 1000 200 A/µs 1000 di F/dt 30A 15A 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 26 12 A 22 18 60A 30A 15A 60A 30A 15A 9 S Irr 20 10 8 16 7 14 6 12 5 10 4 8 6 200 Rev.2.2 300 400 500 600 700 800 3 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2007-09-01 IDB30E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 single pulse 10 -4 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.2 Page 6 2007-09-01 IDB30E60 Rev.2.2 Page 7 2007-09-01 IDB30E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8 2007-09-01