MSC1090M RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INPUT MATCHED INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 90 W MINIMUM GP = 8.4 dB DESCRIPTION: The MSC1090M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. Low RF thermal resistance and emitter ballasting ensure high reliability and product consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter PDISS VCBO Vces Vebo TJ IC TSTG Power Dissipation Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Junction Temperature Device Current Storage Temperature Value Unit 220 65 65 3.5 200 5.52 -65 to +150 W V V V ºC .8 °C/W A ºC Thermal Data RTH(j-c) Junction-Case Thermal Resistance Revision A, January 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MSC1090M ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCBO BVCER BVEBO ICES HFE Test Conditions IC = 10 mA IC = 10 mA IE = 1 mA VCE = 50 V VCE = 5 V IE = 0 mA RBE = 10Ω IC = 0 mA IC = 500 mA Min. Value Typ. Max. 65 65 3.5 --15 ----------- ------6.25 120 Min. Value Typ. Max. Units V V V mA --- DYNAMIC Symbol POUT ηC GP Conditions Test Conditions Units f =1025 - 1150 MHz f =1025 - 1150 MHz PIN = 13W PIN = 13W VCE =50V VCE =50V 90 35 ----- ----- W % f =1025 - 1150 MHz PIN = 13W VCE =50V 8.4 --- --- dB Pulse Width = 10 µs Duty Cycle = 1% Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MSC1090M Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.