MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM communications. This device utilizes diffused emitter resisters to achieve VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Value Unit 65 35 65 4 3 30 + 200 - 65 to + 150 V V V V A W °C °C 5.83 °C/W Thermal Data RTH(j-c) Junction-Case Thermal Resistance Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1408 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCBO BVCES BVCEO BVEBO ICBO hFE Test Conditions IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V IE = 0 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 V IC = 200 mA Min. Value Typ. Max. 65 65 35 4 1 Units V V V V mA 5 DYNAMIC Symbol POUT GP * COB Test Conditions f = 136 MHz f = 136 MHz f = 1 MHz VCE = 28 V VCE = 28 V VCB = 30 V Min. Value Typ. Max. 20 8.2 IE = 0 V 35 Rev. B – June 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Units W dB PF MS1408 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.