VS-8EWH02FN-M3 Datasheet

VS-8EWH02FN-M3
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time
2, 4
• 175 °C max. operating junction temperature
• Output rectification freewheeling
1
N/C
• Low forward voltage drop reduced Qrr and soft
recovery
3
Anode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
TO-252AA (D-PAK)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-252AA (D-PAK)
IF(AV)
8A
VR
200 V
VF at IF
0.75 V
trr (typ.)
23 ns
TJ max.
175 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
200
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 156 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C
140
Peak repetitive forward current
IFM
TC = 156 °C, f = 20 kHz, d = 50 %
16
Operating junction and storage temperatures
TJ, TStg
8
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 8 A
-
0.91
0.97
IR = 100 μA
IF = 8 A, TJ = 150 °C
-
0.75
0.85
VR = VR rated
-
-
5
TJ = 150 °C, VR = VR rated
-
6
60
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
22
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Revision: 15-Jun-15
Document Number: 93259
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
-
23
27
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
27
-
TJ = 25 °C
-
24
-
-
33
-
TJ = 125 °C
Peak recovery current
TJ = 25 °C
IRRM
Reverse recovery charge
TJ = 125 °C
IF = 8 A
dIF/dt = 200 A/μs
VR = 160 V
-
2.3
-
-
4.3
-
UNITS
ns
A
TJ = 25 °C
-
27
-
TJ = 125 °C
-
70
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
RthJC
-
1.7
2.5
°C/W
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
TEST CONDITIONS
Approximate weight
g
oz.
Case style D-PAK (TO-252AA)
8EWH02FN
100
100
TJ = 175 °C
10
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
0.3
0.01
TJ = 175 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
0.2
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 15-Jun-15
Document Number: 93259
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CT - Junction Capacitance (pF)
100
10
0
50
100
150
200
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
180
12
170
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
DC
160
150
140
Square wave (D = 0.50)
Rated VR applied
130
10
8
RMS limit
6
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
4
2
See note (1)
DC
120
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Jun-15
Document Number: 93259
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50
120
45
100
40
Qrr (nC)
trr (ns)
8 A, TJ = 125 °C
30
25
20
8 A, TJ = 125 °C
80
35
60
40
8 A, TJ = 25 °C
8 A, TJ = 25 °C
20
15
10
100
0
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-15
Document Number: 93259
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-8EWH02FN-M3
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ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
H
02
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (8 = 8 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = single diode
4
-
Package identifier:
5
-
H = hyperfast recovery
6
-
Voltage rating (02 = 200 V)
7
-
FN = TO-252AA
8
-
None = tube
W = D-PAK
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-8EWH02FN-M3
75
3000
Antistatic plastic tube
VS-8EWH02FNTR-M3
2000
2000
13" diameter reel
VS-8EWH02FNTRL-M3
3000
3000
13" diameter reel
VS-8EWH02FNTRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95384
Revision: 15-Jun-15
Document Number: 93259
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
3
(2) L5
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
2
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
2x e
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
MILLIMETERS
INCHES
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
1.40
1.78
0.055
0.070
2.29 BSC
MIN.
MAX.
0.090 BSC
b
0.64
0.89
0.025
0.035
L
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
3
2.74 BSC
L2
0.51 BSC
NOTES
0.108 REF.
0.020 BSC
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
Revision: 05-Dec-12
Document Number: 95016
1
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Revision: 02-Oct-12
1
Document Number: 91000