VS-SA61BA60 www.vishay.com Vishay Semiconductors Single Phase Fast Recovery Bridge (Power Modules), 61 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Simplified mechanical designs, rapid assembly • Excellent power/volume ratio • Designed and qualified for industrial and consumer level SOT-227 • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY 600 V DESCRIPTION IO 61 A trr 170 ns The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. VRRM Type Modules - Bridge, Fast Package SOT-227 Circuit Single phase bridge MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO IFSM I2t VALUES UNITS 61 A TC 57 °C 50 Hz 300 60 Hz 310 50 Hz 442 60 Hz 402 VRRM TJ A A2s 600 V -55 to +150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER SA61BA60 VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ MAXIMUM mA 60 600 700 10 Revision: 31-May-16 Document Number: 94688 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER Maximum DC output current at case temperature Maximum peak, one-cycle non-repetitive forward current SYMBOL IO IFSM VALUES UNITS Resistive or inductive load TEST CONDITIONS 61 A 57 °C t = 10 ms 300 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Value of threshold voltage VF(TO) Forward slope resistance rt Maximum forward voltage drop VFM RMS isolation voltage base plate VISOL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 310 260 Initial TJ = TJ maximum 442 402 284 I2t for time tx = I2t x tx0.1 tx 10 ms, VRRM = 0 V kA2s 4.4 TJ maximum TJ = TJ maximum, IFM = 30 Apk A2s 313 100 % VRRM reapplied TJ = 25 °C, IFM = 30 Apk A 250 0.914 V 10.5 m 1.33 tp = 400 μs V 1.23 f = 50 Hz, t = 1 s 3000 RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time, typical Reverse recovery current, typical Reverse recovery charge, typical SYMBOL trr Irr Qrr TEST CONDITIONS VALUES TJ = 25 °C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/μs 170 TJ = 125 °C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/μs 250 TJ = 25 °C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/μs 10.5 TJ = 125 °C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/μs 16 TJ = 25 °C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/μs 900 TJ = 125 °C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/μs 1970 UNITS ns IFM trr A t dIR dt Qrr IRM(REC) nC Snap factor, typical S TJ = 25 °C 0.6 - Junction capacitance, typical CT VR = 600 V 67 pF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS TJ, TStg - 55 - 150 °C Thermal resistance junction to case RthJC - - 0.30 Thermal resistance case to heatsink RthCS Flat, greased surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Case style °C/W SOT-227 Revision: 31-May-16 Document Number: 94688 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 Vishay Semiconductors 220 1000 100 TJ = 150 °C Average Power Loss (W) 200 TJ = 125 °C TJ = 25 °C 10 180˚ (Sine) 160 140 180˚ (Rect) 120 100 80 60 40 0 0 0.5 1 1.5 2 2.5 3 0 3.5 10 20 30 40 50 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 4 - Current Rating Characteristics 10 000 TJ = 150 °C IR - Reverse Current (μA) 180 20 1 1000 TJ = 125 °C 100 TJ = 25 °C 10 1 0.1 Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) www.vishay.com 60 150 140 130 120 110 180˚ (Rect) 100 90 80 180˚ (Sine) 70 60 50 40 0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 31-May-16 Document Number: 94688 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 t2 Notes: Single Pulse (Thermal Resistance) 1. Duty factor D = t1/ t2 2. Peak TJ = Pdm x ZthJC + Tc 0 .01 0.00001 0.0001 0.001 0.01 0.1 1 tp - Square Wave Pulse Duration (μs) Fig. 6 - Typical Forward Voltage Drop Characteristics 300 IF = 20 A 250 VR = 30 V VR = 30 V IF = 30 A IF = 30 A 35 IF = 10 A IF = 20 A 125 °C IRR (A) trr (ns) 200 25 125 °C 150 15 25 °C 100 IF = 10 A 25 °C 5 50 100 1000 100 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt 4000 VR = 30 V IF = 30 A 3500 3000 Qrr (nC) IF = 20 A 2500 2000 125 °C IF = 10 A 1500 1000 25 °C 500 100 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Revision: 31-May-16 Document Number: 94688 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 94688 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- S A 61 B A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - S = Fast recovery diode 3 - A = Present Silicon Generation 4 - Current rating (61 = 61 A) 5 - Circuit configuration: B = Single phase bridge 6 - Package indicator: A = SOT-227, standard insulated base 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment (AC) 4 Single phase bridge 3 (-) 4 3 1 2 B (+) 1 2 (AC) Revision: 31-May-16 Document Number: 94688 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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