IPP041N04N G Type IPB041N04N G ™ OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS(on),max 4.1 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB041N04N G IPP041N04N G Package PG-TO263-3 PG-TO220-3 Marking 041N04N 041N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 80 V GS=10 V, T C=100 °C 80 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche current, single pulse3) I AS T C=25 °C 80 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 60 mJ Gate source voltage V GS ±20 V 1) Rev. 1.2 J-STD20 and JESD22 page 1 2009-12-17 IPP041N04N G IPB041N04N G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 94 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 62 6 cm² cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=45 µA 2 - 4 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=40 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance5) R DS(on) V GS=10 V, I D=80 A - 3.3 4.1 mΩ Gate resistance RG - 1.6 - Ω Transconductance g fs 50 100 - S 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=80 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Rev. 1.2 Measured from drain tab to source pin page 2 2009-12-17 IPP041N04N G IPB041N04N G Parameter Values Symbol Conditions Unit min. typ. max. - 3400 4500 - 980 1300 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=20 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 36 - Turn-on delay time t d(on) - 16 - Rise time tr - 3.8 - Turn-off delay time t d(off) - 23 - Fall time tf - 4.8 - Gate to source charge Q gs - 18 - Gate charge at threshold Q g(th) - 10.3 - Gate to drain charge Q gd - 5.3 - Switching charge Q sw - 12.5 - Gate charge total Qg - 42 56 Gate plateau voltage V plateau - 5.1 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 40 - nC Output charge Q oss V DD=20 V, V GS=0 V - 41 - - - 78 - - 400 V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 Ω ns Gate Charge Characteristics6) V DD=20 V, I D=30 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.96 1.2 Reverse recovery charge Q rr V R=20 V, I F=I S, di F/dt =400 A/µs - 46 - 6) Rev. 1.2 V nC See figure 16 for gate charge parameter definition page 3 2009-12-17 IPP041N04N G IPB041N04N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 80 80 60 60 I D [A] P tot [W] 100 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 102 100 µs 100 Z thJC [K/W] I D [A] DC 1 ms 101 10 ms 0.5 0.2 0.1 10-1 0.05 0.02 100 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.2 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-12-17 IPP041N04N G IPB041N04N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 8 10 V 5.5 V 7 250 6V 7V 6.5 V 6 R DS(on) [mΩ ] I D [A] 200 6.5 V 150 5 7V 4 10 V 3 6V 100 2 5.5 V 50 1 5V 0 0 0 1 2 3 0 40 80 V DS [V] 120 160 200 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 300 120 250 100 200 80 g fs [S] I D [A] parameter: T j 150 100 60 40 50 20 175 °C 25 °C 0 0 0 2 4 6 8 Rev. 1.2 0 20 40 60 I D [A] V GS [V] page 5 2009-12-17 IPP041N04N G IPB041N04N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 8 4 7 3 5 98 % V GS(th) [V] R DS(on) [mΩ ] 6 4 typ 2 3 2 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C, 98% Ciss Coss 103 175 °C, 98% 100 I F [A] C [pF] 25 °C 175 °C 102 10 Crss 101 1 0 10 20 30 40 Rev. 1.2 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2009-12-17 IPP041N04N G IPB041N04N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 20 V 10 25 °C 8V 32 V 100 °C 8 V GS [V] I AV [A] 150 °C 10 6 4 2 1 0 10-1 100 101 102 103 0 10 t AV [µs] 20 30 40 50 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 45 V GS Qg V BR(DSS) [V] 40 35 V g s(th) 30 25 Q g(th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.2 page 7 2009-12-17 IPP041N04N G IPB041N04N G Package Outline Footprint: Rev. 1.2 PG-TO220-3-1 Packaging: page 8 2009-12-17 IPP041N04N G IPB041N04N G Package Outline Rev. 1.2 PG-TO263-3 page 9 2009-12-17 IPP041N04N G IPB041N04N G Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 10 2009-12-17