BSF083N03LQ G OptiMOSTM2 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) V DS 30 V R DS(on),max 8.3 mΩ ID 53 A • Excellent gate charge x R DS(on) product (FOM) • Low profile (<0.7 mm) • Double-sided cooling MG-WDSON-2 • Low parasitic inductance • 100% avalanche tested • Qualified for consumer level application • Compatible with DirectFET® package SQ footprint and outline 1) • Pb-free plating; RoHS compliant Type Package Outline Marking BSF083N03LQ G MG-WDSON-2 SQ 6003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 53 V GS=10 V, T C=100 °C 33 V GS=10 V, T A=25 °C, R thJA=58 K/W 2) Unit A 13 Pulsed drain current3) I D,pulse T C=25 °C 212 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=38 A, R GS=25 Ω 30 mJ Gate source voltage V GS ±20 V 1) TM CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. Rev. 2.0 page 1 2009-05-11 BSF083N03LQ G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 36 T A=25 °C, T j, T stg -40 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.2 R thJA=58 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - 1.0 top - - 3.5 6 cm2 cooling area2) - - 58 30 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 11.4 14.2 mΩ Drain-source on-state resistance R DS(on) V GS=10 V, I D=20 A - 6.9 8.3 Gate resistance RG - 1.1 - Ω Transconductance g fs 26 52 - S |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.0 See figure 3 for more detailed information page 2 2009-05-11 BSF083N03LQ G Parameter Values Symbol Conditions Unit min. typ. max. - 1350 1800 - 430 570 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 58 - Turn-on delay time t d(on) - 3.3 - Rise time tr - 3.2 - Turn-off delay time t d(off) - 14 - Fall time tf - 2.8 - Gate to source charge Q gs - 3.9 - Gate charge at threshold Q g(th) - 1.9 - Gate to drain charge Q gd - 2.5 - Switching charge Q sw - 4.5 - Gate charge total Qg - 8.5 11 Gate plateau voltage V plateau - 3.2 - Gate charge total Qg V DD=15 V, I D=20 A, V GS=0 to 10 V - 18 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 7.4 - Output charge Q oss V DD=15 V, V GS=0 V - 10 - - - 32 - - 212 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=15 V, I D=20 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 °C - 0.83 Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 4) 5) Rev. 2.0 T C=25 °C A V 16 nC See figure 13 for more detailed information See figure 16 for gate charge parameter definition page 3 2009-05-11 BSF083N03LQ G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 60 40 54 48 30 42 I D [A] P tot [W] 36 20 30 24 18 10 12 6 0 0 0 40 80 120 160 0 40 80 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 2 0.5 10 10 µs 0 0.2 0.1 Z thJC [K/W] I D [A] 100 µs DC 10 160 T C [°C] T C [°C] 1 1 ms 0.05 10 -1 0.02 0.01 single pulse 10 ms 100 10-2 10-1 10 10-3 -1 10 0 10 1 10 2 V DS [V] Rev. 2.0 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-05-11 BSF083N03LQ G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 120 20 10 V 5V 3.5 V 4.5 V 16 4V R DS(on) [mΩ] I D [A] 80 4V 4.5 V 12 5V 8 10 V 40 3.5 V 4 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 150 80 100 I D [A] g fs [S] 60 40 50 20 150 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 2.0 0 40 80 120 160 I D [A] V GS [V] page 5 2009-05-11 BSF083N03LQ G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 16 2.5 2 12 1.5 V GS(th) [V] R DS(on) [mΩ] 98 % 8 1 typ 4 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C Ciss 103 150 °C, 98% 100 I F [A] C [pF] Coss 150 °C 25 °C, 98% 102 10 Crss 101 1 0 10 20 30 Rev. 2.0 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-05-11 BSF083N03LQ G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=20 A pulsed parameter: T j(start) parameter: V DD 100 12 6V 10 15 V 24 V 8 V GS [V] I AV [A] 25 °C 10 100 °C 6 125 °C 4 2 1 0 1 10 100 1000 0 4 8 12 16 20 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR(DSS) [V] 30 28 V g s(th) 26 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2009-05-11 BSF083N03LQ G Package Outline Rev. 2.0 page 8 2009-05-11 BSF083N03LQ G Package Outline CanPAK PG-TDSON-8: Tape Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSF083N03LQ G Dimensions in mm Raccomended stencil thikness 150 µm Rev. 2.0 page 10 2009-05-11 BSF083N03LQ G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11