INFINEON BSF083N03LQG

BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Product Summary
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
V DS
30
V
R DS(on),max
8.3
mΩ
ID
53
A
• Excellent gate charge x R DS(on) product (FOM)
• Low profile (<0.7 mm)
• Double-sided cooling
MG-WDSON-2
• Low parasitic inductance
• 100% avalanche tested
• Qualified for consumer level application
• Compatible with DirectFET® package SQ footprint and outline 1)
• Pb-free plating; RoHS compliant
Type
Package
Outline
Marking
BSF083N03LQ G
MG-WDSON-2
SQ
6003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
53
V GS=10 V, T C=100 °C
33
V GS=10 V, T A=25 °C,
R thJA=58 K/W 2)
Unit
A
13
Pulsed drain current3)
I D,pulse
T C=25 °C
212
Avalanche current, single pulse 4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=38 A, R GS=25 Ω
30
mJ
Gate source voltage
V GS
±20
V
1)
TM
CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
BSF083N03LQ G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
36
T A=25 °C,
T j, T stg
-40 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.2
R thJA=58 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
1.0
top
-
-
3.5
6 cm2 cooling area2)
-
-
58
30
-
-
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=20 A
-
11.4
14.2
mΩ
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=20 A
-
6.9
8.3
Gate resistance
RG
-
1.1
-
Ω
Transconductance
g fs
26
52
-
S
|V DS|>2|I D|R DS(on)max,
I D=30 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 2.0
See figure 3 for more detailed information
page 2
2009-05-11
BSF083N03LQ G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1350
1800
-
430
570
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
58
-
Turn-on delay time
t d(on)
-
3.3
-
Rise time
tr
-
3.2
-
Turn-off delay time
t d(off)
-
14
-
Fall time
tf
-
2.8
-
Gate to source charge
Q gs
-
3.9
-
Gate charge at threshold
Q g(th)
-
1.9
-
Gate to drain charge
Q gd
-
2.5
-
Switching charge
Q sw
-
4.5
-
Gate charge total
Qg
-
8.5
11
Gate plateau voltage
V plateau
-
3.2
-
Gate charge total
Qg
V DD=15 V, I D=20 A,
V GS=0 to 10 V
-
18
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
7.4
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
10
-
-
-
32
-
-
212
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=15 V, I D=20 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
0.83
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
4)
5)
Rev. 2.0
T C=25 °C
A
V
16
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
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2009-05-11
BSF083N03LQ G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
40
54
48
30
42
I D [A]
P tot [W]
36
20
30
24
18
10
12
6
0
0
0
40
80
120
160
0
40
80
120
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10
2
0.5
10
10 µs
0
0.2
0.1
Z thJC [K/W]
I D [A]
100 µs
DC
10
160
T C [°C]
T C [°C]
1
1 ms
0.05
10
-1
0.02
0.01
single pulse
10 ms
100
10-2
10-1
10
10-3
-1
10
0
10
1
10
2
V DS [V]
Rev. 2.0
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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BSF083N03LQ G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
120
20
10 V
5V
3.5 V
4.5 V
16
4V
R DS(on) [mΩ]
I D [A]
80
4V
4.5 V
12
5V
8
10 V
40
3.5 V
4
3.2 V
3V
2.8 V
0
0
0
1
2
3
0
10
20
V DS [V]
30
40
50
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
100
150
80
100
I D [A]
g fs [S]
60
40
50
20
150 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 2.0
0
40
80
120
160
I D [A]
V GS [V]
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BSF083N03LQ G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
16
2.5
2
12
1.5
V GS(th) [V]
R DS(on) [mΩ]
98 %
8
1
typ
4
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
25 °C
Ciss
103
150 °C, 98%
100
I F [A]
C [pF]
Coss
150 °C
25 °C, 98%
102
10
Crss
101
1
0
10
20
30
Rev. 2.0
0.0
0.5
1.0
1.5
2.0
V SD [V]
V DS [V]
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BSF083N03LQ G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=20 A pulsed
parameter: T j(start)
parameter: V DD
100
12
6V
10
15 V
24 V
8
V GS [V]
I AV [A]
25 °C
10
100 °C
6
125 °C
4
2
1
0
1
10
100
1000
0
4
8
12
16
20
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
36
V GS
34
Qg
32
V BR(DSS) [V]
30
28
V g s(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.0
page 7
2009-05-11
BSF083N03LQ G
Package Outline
Rev. 2.0
page 8
2009-05-11
BSF083N03LQ G
Package Outline
CanPAK
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.0
page 9
2009-05-11
BSF083N03LQ G
Dimensions in mm
Raccomended stencil thikness 150 µm
Rev. 2.0
page 10
2009-05-11
BSF083N03LQ G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2009-05-11