PC3H510NIP0F PC3H510NIP0F Mini-flat Half Pitch Package, Darlington Phototransistor Output, Low Input Current Photocoupler ■ Description ■ Agency approvals/Compliance PC3H510NIP0F contains a IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, Half pitch type. Input-output isolation voltage(rms) is 2.5kV. CTR is MIN. 600% at input current of 0.5mA. 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC3H51) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers 2. Facsimiles 3. Telephones ■ Features 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. Low input current type (IF=0.5mA) 4. Darlington phototransistor output (CTR : MIN. 600% at IF=0.5mA, VCE=2V) 5. Isolation voltage between input and output (Viso(rms) : 2.5kV) 6. RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A02302FEN Date Jun. 30. 2005 © SHARP Corporation PC3H510NIP0F ■ Internal Connection Diagram 4 1 1 2 3 2 3 ■ Outline Dimensions (Unit : mm) Date code 1 4 H51 3 2 4.4±0.2 0.4±0.1 1.27±0.25 2.6±0.3 SHARP mark "S" Anode mark 4 Anode Cathode Emitter Collector 5.3±0.3 Epoxy resin 0.5+0.4 −0.2 7.0+0.2 −0.7 0.1±0.1 2.0±0.2 0.2±0.05 (1.7) *( ) : Reference Dimensions Product mass : approx. 0.05g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A02302FEN 2 PC3H510NIP0F Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M ·· N · Mark P R S T U V W X A B C ·· · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D repeats in a 20 year cycle Country of origin Japan Rank mark There is no rank mark indicator. Sheet No.: D2-A02302FEN 3 PC3H510NIP0F ■ Absolute Maximum Ratings Output Input Parameter Symbol IF Forward current *1 Peak forward current IFM Reverse voltage VR P Power dissipation Collector-emitter voltage VCEO Emitter-collector voltage VECO Collector current IC Collector power dissipation PC Total power dissipation Ptot Operating temperature Topr Storage temperature Tstg *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 10 200 6 15 35 6 80 150 170 −30 to +100 −40 to +125 2.5 260 (Ta=25˚C) Unit mA mA V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Input Output Transfer characteristics Symbol Parameter VF Forward voltage Reverse current IR Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Current transfer ratio IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf Rise time tr Response time Fall time tf Conditions IF=5mA VR=4V V=0, f=1kHz VCE=10V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=0.5mA, VCE=2V IF=1mA, IC=2mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=2V, IC=10mA, RL=100Ω MIN. − − − − 35 6 3 − 5×1010 − − − TYP. 1.2 − 30 − − − 14 − 1×1011 0.6 60 53 MAX. 1.4 10 250 1000 − − 60 1.0 − 1.0 300 250 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A02302FEN 4 PC3H510NIP0F Fig.2 Diode Power Dissipation vs. Ambient Temperature Fig.1 Forward Current vs. Ambient Temperature Diode power dissipation P (mW) Forward current I F (mA) 15 10 5 0 −30 0 25 50 75 100 15 10 5 0 −30 125 Fig.3 Collector Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) Collector power dissipation PC (mW) 50 75 100 125 250 200 150 100 50 0 −30 0 25 50 75 100 200 170 150 100 50 0 −30 125 Ambient temperature Ta (˚C) Forward current IF (mA) 10−2 10−1 50 75 100 125 100 100 10−3 25 Fig.6 Forward Current vs. Forward Voltage Pulse width≤100µs Ta=25˚C 1 000 0 Ambient temperature Ta (˚C) Fig.5 Peak Forward Current vs. Duty Ratio Peak forward current IFM (mA) 25 Fig.4 Total Power Dissipation vs. Ambient Temperature 250 10 0 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) 10 Ta=100˚C Ta=75˚C 25˚C 0˚C 50˚C −25˚C 1 0.1 1 0 Duty ratio 0.5 1 1.5 2 Forward voltage VF (V) Sheet No.: D2-A02302FEN 5 PC3H510NIP0F Fig.8 Collector Current vs. Forward Current Fig.7 Current Transfer Ratio vs. Forward Current 4 000 3 500 3 000 Collector current IC (mA) Current transfer ratio CTR (%) 100 VCE=2V Ta=25˚C 2 500 2 000 1 500 VCE=2V Ta=25˚C 10 1 1 000 500 0 0.1 1 0.1 0.1 10 1 Forward current IF (mA) Forward current IF (mA) Fig.9 Collector Current vs. Collector-emitter Voltage Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 120 140 Pc(MAX) Relative current transfer ratio (%) Collector current IC (mA) Ta=25˚C IF=7.0mA 100 IF=5.0mA 80 IF=3.0mA 60 IF=2.0mA 40 IF=1.0mA IF=0.7mA 20 120 IF=0.5mA VCE=2V 100 80 60 40 20 IF=0.5mA 0 0 1 2 3 4 0 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 5 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Fig.12 Collector Dark Current vs. Ambient Temperature 10−4 1.2 IF=1mA IC=2mA VCE=10V 10−5 1 Collector dark current ICEO (A) Collector-emitter saturation voltage VCE (sat) (V) 10 0.8 0.6 0.4 10−6 10−7 10−8 10−9 0.2 10−10 −30−20−10 0 10 20 30 40 50 60 70 80 90 100 0 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A02302FEN 6 PC3H510NIP0F Fig.13 Response Time vs. Load Resistance Fig.14 Test Circuit for Response Time 1 000 VCC VCE=2V IC=10mA Ta=25˚C Input Input Response time (µs) tr 100 RD RL Output Output 10% tf 90% ts td ts tr td tf 10 Please refer to the conditions in Fig.13 1 0.01 0.1 1 Load resistance RL (kΩ) 10 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A02302FEN 7 PC3H510NIP0F ■ Design Considerations ● Design guide While operating at IF<0.5mA, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Recommended Foot Print (reference) 0.8 1.27 6.3 1.5 (Unit : mm) ✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes. Sheet No.: D2-A02302FEN 8 PC3H510NIP0F ■ Manufacturing Guidelines ● Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. (˚C) 300 Terminal : 260˚C peak ( package surface : 250˚C peak) 200 Reflow 220˚C or more, 60s or less Preheat 150 to 180˚C, 120s or less 100 0 0 1 2 3 4 (min) Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 260˚C and within 10s. Preheating is within the bounds of 100 to 150˚C and 30 to 80s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 400˚C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions. Sheet No.: D2-A02302FEN 9 PC3H510NIP0F ● Cleaning instructions Solvent cleaning: Solvent temperature should be 45˚C or below Immersion time should be 3 minutes or less Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D2-A02302FEN 10 PC3H510NIP0F ■ Package specification ● Tape and Reel package Package materials Carrier tape : PS Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F G D J I L K Dimensions List A B 12.0±0.3 5.5±0.1 H I 7.5±0.1 0.3±0.05 5˚ MAX . H H A B C E C 1.75±0.1 J 2.3±0.1 D 8.0±0.1 K 3.1±0.1 E 2.0±0.1 L +0.1 φ1.6−0 F 4.0±0.1 (Unit : mm) G +0.1 φ1.5−0 Reel structure and Dimensions e d c g Dimensions List a b 330 13.5±1.5 e f 23±1.0 2.0±0.5 f a b (Unit : mm) c d 100±1.0 13±0.5 g 2.0±0.5 Direction of product insertion Pull-out direction [Packing : 3 000pcs/reel] Sheet No.: D2-A02302FEN 11 PC3H510NIP0F ■ Important Notices with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. · Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. · If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. · Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection · This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [E205] Sheet No.: D2-A02302FEN 12