WILLAS FM120-M+ 2SD874THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SOT-89 TRANSISTOR design, excellent power dissipation offers • Batch process(NPN) better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to board space. z optimize Low Collector-Emitter Saturation Voltage • Low power loss, high efficiency. z • High Large Collector Power Dissipation current capability, low forward voltage drop. surge capability. z • High Mini Power Type Package Guardring for overvoltage • z Pb-Free package is protection. available • Ultra high-speed switching. RoHS product for packing code suffix ”G” epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards • Lead-free Halogen free product for packing code ofsuffix “H” MIL-STD-19500 /228 z Moisture Sensitivity Level 1 • RoHS product for packing code suffix "G" Halogen free product for (T packing codeunless suffix "H"otherwise noted) =25℃ MAXIMUM RATINGS Mechanical data Emitter-Base Voltage 0.071(1.8) 0.056(1.4) 3. EMITTER Value Unit 30 V 0.031(0.8) Typ. 25 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. V V Dimensions in inches and (millimeters) 1 Thermal Resistance From Junction To Ambient A 500 mW 250 ℃/W ℃ MAXIMUM AND ELECTRICAL CHARACTERISTICS JunctionRATINGS Temperature 150 Ratings at T 25℃ ambient temperature unless otherwise specified. Storage Temperature stg Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% ℃ im -55~+150 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM120-MH RATINGS unless otherwise specified) ELECTRICAL CHARACTERISTICSSYMBOL (Ta=25℃ Marking Code 12 20 VRRMSymbol Maximum Recurrent Peak Reverse Voltage Parameter VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current Collector cut-off current IO V(BR)EBO IFSM ICBO Emitter cut-off current RΘJA IEBO Maximum RMS Voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 16 60 30 60 V(BR)CBO IC=10µA,IE=0 V(BR)CEO IC=2mA,IB=0 Typical Junction Capacitance (Note 1) CJ hFE(1) Operating Temperature Range TJ hFE(2) DC current gain Storage Temperature Range Collector-emitter saturation voltage 13 14 15 30 40 50 Test conditions 21 28 35 Pr el 0.012(0.3) Typ. 2. COLLECTOR 5 • Polarity : Indicated by cathode band Collector Current IC • Mounting Position : Any Collector Power Dissipation PC • Weight : Approximated 0.011 gram Tj 0.146(3.7) 0.130(3.3) 1. BASE ina ry Method 2026 RθJA SOD-123H a Parameter Epoxy : UL94-V0 rated flame retardant •Symbol Collector-Base Voltage V • Case CBO: Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable Collector-Emitter Voltage per MIL-STD-750 VCEO VEBO Pb Free Product Base-emitter saturation voltage CHARACTERISTICS TSTG Maximum Average Reverse Current at @T A=25℃ Collector output capacitance Rated DC Blocking Voltage 42 50 25 80 100 1.0 5 30 IE=10µA,IC=0 VCB=20V,IE=0 VEB =4V,IC=0 40 120 85 VCE =10V, IC=500mA -55 to +125 VCE=5V, IC=1A 50 150 V V Volts Volts Volts 200 Amps V 0.1 µA Amps 0.1 µA ℃/W 340 PF -55 to +150 - 65 to +175 IC=500mA,IB=50mA VCE(sat) 30 56 10 115 120 100 150 Typ Max Unit 200 70 105 140 0.4 ℃ ℃ V IC=500mA,I 1.2 VBE(sat) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MHVFM1200-MH UNIT B=50mA SYMBOL VF Maximum Forward Voltage at 1.0A DC Transition frequency 40 18 Min80 @T A=125℃ IR 0.50C=50mA, f=200MHz 0.70 VCE=10V,I fT VCB=10V, IE=0, f=1MHz Cob 0.5 0.9 MHz 0.92 0.85 200 Volts 20 10 pF mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. CLASSIFICATION OF hFE(1) 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 RANK Q R S RANGE 85–170 120–240 170–340 MARKING ZQ ZR ZS WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SD874 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-89 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .181(4.60) • Epoxy : UL94-V0 rated flame retardant .173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Method 2026 .063(1.60) .055(1.40) .061REF • Polarity : Indicated by cathode band (1.55)REF • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI 12 20 VRRM Maximum Recurrent Peak Reverse Voltage .154(3.91) .102(2.60) 13 30 14 15 .091(2.30) 40 50 16 60 18 80 10 100 115 150 120 200 Volts Pr el .167(4.25) Marking Code Maximum RMS Voltage 14 VRMS .023(0.58) 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage 20 VDC.016(0.40) 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .047(1.2) superimposed on rated load (JEDEC method) RΘJA .031(0.8) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 1.0 30 40 120 -55 to +125 Amp ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ .197(0.52) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .017(0.44) SYMBOL FM120-MH FM130-MH .013(0.32) 0.9 0.92 VF 0.50 0.70 0.85 .014(0.35) .118TYP UNIT IR (3.0)TYP mAm 0.5 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Amp 10 @T A=125℃ Volts NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CORP. Rev.C WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SD874 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Pb Free Product Package outline SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) 2SD874 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) CASE:SOT‐89 switching. • Ultra high-speed • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS Marking Code 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt VRRM contained are intended to provide a product description only. "Typical" parameters Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volt which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amp Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave WILLAS does not assume any liability arising out of the application or 30 IFSM Amp superimposed on rated load (JEDEC method) use of any product or circuit. RΘJA ℃/W 40 Typical Thermal Resistance (Note 2) PF 120 Typical Junction CJ Capacitance (Note 1) -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ Pr el Ratings at 25℃ WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI applications where a failure or malfunction of component or circuitry may directly Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ or indirectly cause injury or threaten a life without expressed written approval IR mAm 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.