WILLAS FM120-M+ 2SB1440 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse TRANSISTOR (PNP)leakage current and thermal resistance. • Low profile surface mounted application in order to FEATURES optimize board space. power loss, high efficiency. • Low z Low collector-emitter saturation voltage VCE(sat) • High current capability, low forward voltage drop. z For low-frequency output amplification • High surge capability. z Pb-Free package is available for overvoltage protection. • Guardring high-speed • Ultraproduct RoHS forswitching. packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free SOD-123H SOT-89 0.146(3.7) 0.130(3.3) 2. COLLECTOR Halogen free product for packing code suffix "H" VCBO VCEO VEBO meter Mechanical data Value Unit -50 V Collector-Base Voltage • Epoxy : UL94-V0 rated flame retardant Collector-Emitter Voltage -50 : Molded plastic, SOD-123H • Case , Emitter-Base -5 • Terminals :Plated Voltage terminals, solderable per MIL-STD-750 Method 2026 Collector Current -Continuous IC PC TJ Tstg • Polarity : Indicated cathode band Collector PowerbyDissipation • Mounting Position : Any Junction Temperature • Weight : Approximated 0.011 gram Storage Temperature 0.071(1.8) 0.056(1.4) 1 2 3. EMITTER MIL-STD-19500 MAXIMUM RATINGS /228 (Ta=25℃ unless otherwise noted) • RoHS product for packing code suffix "G" Symbol Para 0.012(0.3) Typ. 1. BASE 3 0.040(1.0) 0.024(0.6) V 0.031(0.8) Typ. V -2 A 500 mW 150 ℃ -55~150 ℃ 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol For capacitive load, derate current by 20% RATINGS V(BR)CBO Maximum Recurrent Peak Reverse Voltage Marking Code Collector-emitter breakdown voltage Maximum DC Blocking Voltage Emitter-base breakdown 14 40 15 50 16 60 VRMS 14 21 28 35 42 40 50 60 IFSM RΘJA Operating Temperature DC current gain Range J hC FE1 VCE=-2V, = IC TSTG hFE2 VCE=-2V, = IC -1A TJ Storage Temperature Range -200mA -55 to +125 Transition frequency @T A=125℃ NOTES: Unit -50 -50 18 80 10 100 115 150 56 70 105 100 150 -5 80 40 120120 V 120 200 Vol 140 Vol V 200 Vol V -1 μA -1 μA Am Am ℃/W PF 340 -55 to +150 ℃ - 65 to +175 60 VF 0.50 0.70 IC=-1A, IB -50mA VBE(sat) Base- emitter voltage Maximum Averagesaturation Reverse Current at @T A=25℃ = Max ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH-0.3 FM1150-MHV FM1200-MH = IC=-1A,FM130-MH IB -50mA V SYMBOL CE(sat) FM120-MH Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage Typ 1.0 30 = VEB=-5V, IC 0 IEBO Typical Junction Capacitance (Note 1) CHARACTERISTICS Collector-emitter saturation voltage IE20 =-10μA,30IC=0 IO Peak Forward Surge Current 8.3 ms single half sine-wave 13 30 = VCB=-50V, IE 0 I CBO Collector cut-off current Typical Thermal Resistance (Note 2) VRRM 12 20 VDC V(BR)EBO voltage superimposed on rated load (JEDEC method) Emitter cut-off current IC=-10μA, IE=0 = V(BR)CEO IC=-1mA, IB 0 Maximum Average Forward Rectified Current Min SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Collector-base breakdown voltage Maximum RMS Voltage Test conditions 0.5 IR VCE=-10V, = IC 50mA, =f 200MHz fT 1Measured atoutput 1 MHZ and applied reverse voltage of 4.0 VDC.C Collector capacitance ob 0.85 10 0.9 -1..2 80 VCB=-10V, IE=0, f=1MHz 0.92 V UN Vol mAm MHz 60 pF 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF h FE1 Rank Range Marking 2012-06 2012-0 R S 120-240 170-340 1L WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1440THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Package outlineh Static Characteristic -0.22 Features Pb Free Product FE VCE= -2V -1.0mA COMMONoffers Batch process design, excellent power dissipation •- 0.20 EMITTER SOD-123H a optimize board space. MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" o hFE -0.8mA Low power loss, high efficiency. -0.7mA •- 0.15 • High current capability, low forward voltage drop. -0.6mA • High surge capability. Guardring for overvoltage protection. -0.5mA •- 0.10 • Ultra high-speed switching. -0.4mA • Silicon epitaxial planar chip, metal silicon junction. -0.3mAof • Lead-free parts meet environmental standards T =100 C o Ta=25 C - 2 100 IB=-0.1mA 50 - 3 - 4 - 6 5 - 1E-3 - 7 • Epoxy : UL94-V0 rated flame retardant(V) COLLECTOR-EMITTER VOLTAGE V • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 COLLECTOR CURRENT Method 2026 VCEsat —— IC Polarity : Indicated by cathode band • • Mounting Position : Any • Weight : Approximated 0.011 gram BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) (A) 0.031(0.8) Typ. IC Dimensions in inches and (millimeters) - 1000 Ratings at 25℃ ambient temperature unless otherwise specified. - 100 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS - 900 - 800 Ta=25℃ - 700 600 Ta=100℃FM1150-MH FM1200-MH UNI FM150-MH FM160-MH FM180-MH FM1100-MH SYMBOL FM120-MH FM130-MH- FM140-MH Ta=100℃ VRRM 12 20 13 30 - 500 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 - 400 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Ta=25℃ Maximum Recurrent Peak Reverse Voltage Forward - 0.01 - 1E-3Rectified Current IO IFSM - 0.1 COLLECTOR CURRENT I (A) C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) / C ob Typical Junction Capacitance C (Note 1)ib —— 500 TJ Storage Temperature Range (pF) CHARACTERISTICS 600 -55 to +125 - 0.1 IC - 1 Amp - 2 (A) Amp ℃/W Ta PF -55 to +150 ℃ - 65 to +175 o ℃ 500 VF C @T A=125℃ 0.50 400 IR Cib NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Cob 0.70 0.9 0.85 0.92 0.5 mAm 10 300 Volts 200 100 0 -1 REVERSE VOLTAGE 2012-0 40 P —— 120 c β=20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ 100 2012-06 1.0- 0.01 COLLECTOR CURRENT 30 - 1E-3 Ta=25 C Maximum Forward Voltage at 1.0A DC 10 - 0.1 - 300 - 1E-4 - 2 f=1MHz IE=0 / IC=0 TSTG CAPACITANCE - 1 RΘJA VCB / VEBCJ Operating Temperature Range Rated DC Blocking Voltage β=20 COLLECTOR POWER DISSIPATION Pc (mW) - 10 Maximum Average - 1E-4 VBEsat —— - 1100 - 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code IC 0.031(0.8) Typ. - 700 0.040(1.0) - 1 0.024(0.6) - 0.1 - 0.01 CE 0.071(1.8) 0.056(1.4) -0.2mA Mechanical data 0.00 - 1 0.012(0.3) Typ. 200 - 0.05 0 a 0.146(3.7) 0.130(3.3) 300 DC CURRENT GAIN COLLECTOR CURRENT IC (A) better reverse leakage current and thermal resistance. -0.9mA T =25℃ • Low profile surface mounted application in order to • —— IC 800 - 10 V (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1440 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) RATINGS .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code .154(3.91) Maximum Recurrent Peak Reverse Voltage 12 20 VRRM .023(0.58) 13 30 40 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage 14 VRMS .016(0.40) 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TJ TSTG 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) Am Am -55 to +150 - 65 to +175 .017(0.44) FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .014(0.35) .118TYP 0.9 0.92 VF 0.50 0.70 0.85 (3.0)TYP Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 @T A=125℃ 0.5 IR 10 ℃/ P ℃ ℃ UN Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.