RadReport VRG8658 (7/10)

July 20, 2010
Radiation Performance Data Package
VRG8657-S & VRG8658-S
VRG8657-S, DSCC SMD Part Number: 5962-0920102KXC
VRG8658-S, DSCC SMD Part Number: 5962-0920102KYC
Dual voltage regulator,
positive (RH1086), adjustable
Prepared by:
Aeroflex Plainview, Inc.
35 South Service Road
Plainview, NY 11803
1. Part Descriptions:
1.1
1.1.1
1.2
1.2.1
VRG8657-S
Dual voltage regulator, positive (RH1086), adjustable, thru-hole.
VRG8658-S
Dual voltage regulator, positive (RH1086), adjustable, surface mount.
2. Applicable Documents
2.1
Appendix A:
Data Sheet:
SCD8657
DUAL ADJUSTABLE POSITIVE
LDO VOLTAGE REGULATORS
2.2
Appendix B:
Die Spec:
05-08-5134
MICROCIRCUIT, LINEAR, RH1086BHK, 0.5A
AND RH1086BKK, 1.5A POSITIVE
ADJUSTABLE LDO REGULATOR
2.3
Appendix C:
Report:
March 2, 2009
SINGLE EVENT EFFECTS TEST REPORT
SUMMARY: LDO REGULATORS
2.4
Appendix D:
ELDRS Report: 10-006 100412
Enhanced Low Dose Rate Sensitivity (ELDRS)
Radiation Testing of the RH1086MK Low
Dropout Positive Adjustable Regulator
2.5
Appendix E:
DSCC SMD:
MICROCIRCUIT, HYBRID, DUAL VOLTAGE
REGULATOR, POSITIVE LOW DROPOUT,
ADJUSTABLE
5962-09201
3. Radiation Performance
3.1
3.1.1
3.1.2
3.2
3.2.1
3.3
3.3.1
3.4
3.4.1
Total Dose:
100 krads(Si), Dose rate = 50 - 300 rads(Si)/s
See Appendix B: RH1086 per IC manufacturer's Die Specification.
Every wafer lot is subjected to RLAT testing at the stated total dose and dose rate.
SEU:
Tested up to 60 MeV-cm2/mg
See Appendix C: Lockheed Martin, Newtown: Single Event Effects Test Report Summary: LDO
Regulators.
SEL:
Immune up to 60 MeV-cm2/mg
See Appendix C: Lockheed Martin, Newtown: Single Event Effects Test Report Summary: LDO
Regulators.
ELDRS:
50 krads(Si), Dose rate = 10 mrads(Si)/s
See Appendix D: ELDRS Report: 10-006 100412 R1.3
PAGE 2 of 2
Standard Products
VRG8657/VRG8658
Low Drop Out(LDO)Adjustable Voltage Regulators
Dual Positive
Radiation Tolerant
www.aeroflex.com/voltreg
June 21, 2010
FEATURES
❑
❑
❑
❑
❑
❑
❑
❑
❑
❑
❑
❑
Manufactured using
Linear Technology Corporation ® Space Qualified RH1086 die
Radiation performance
- Total dose > 100 krad (Si)
❑ Packaging – Hermetic metal
Two-Independent voltage regulators
- Thru-hole or Surface mount
- 6 Leads, .42"L x .65"W x .200"Ht
Thermal shutdown
- Power package
Output voltage adjustable: 1.25V to 23V
- Weight - 5 gm max
Dropout voltage: 1.3V at 1.0Amp
❑ Designed for aerospace and high reliability space
3-Terminal
applications
Output current: 1.0A (See Note 1 Pg 2)
❑ Available on DSCC SMD: 5962-09201
Voltage reference: 1.25V +2%, -3.2%
Load regulation: 0.3% max
Line regulation: 0.25% max
Ripple rejection: >60dB
DESCRIPTION
The Aeroflex Plainview VRG8657/8658 consists of two Positive Adjustable (RH1086) LDO voltage regulators each
capable of supplying 1.0Amps over the output voltage range as defined under recommended operating conditions. The
VRG8657/8658 offers excellent line and load regulation specifications and ripple rejection. There is full electrical
isolation between the regulators and each regulator to the package.
Dropout (VIN - VOUT) decreases at lower load currents for both regulators.
The VRG8657/8658 serves a wide variety of applications including SCSI-2 Active Terminator, High Efficiency
Linear Regulators, Post Regulators for Switching Supplies, Constant Current Regulators, Battery Chargers and
Microprocessor Supply.
The VRG8657/8658 has been specifically designed to meet exposure to radiation environments. The VRG8657 is
configured for a Thru-Hole 6 lead metal power package and the VRG8658 is configured for a Surface Mount 6 lead
metal power package. It is guaranteed operational from -55°C to +125°C. Available screened to MIL-STD-883, the
VRG8657/8658 is ideal for demanding military and space applications.
For detailed performance characteristic curves, applications information and typical applications see the
latest
Linear Technology Corporation ® data sheets for their RH/LT1086, which is available on-line at
www.linear.com.
1
4
ADJ
2
ADJ
VOUT
VOUT
RH1086
Positive
Regulator
RH1086
Positive
Regulator
VIN
VIN
3
5
FIGURE 1 – BLOCK DIAGRAM / SCHEMATIC
SCD8657 Rev G
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RANGE
UNITS
25+VREF
VDC
Lead temperature (soldering 10 Sec)
300
C
Input Output Differential
25
VDC
Output Voltage
+25
VDC
DC Output Current
1.5
A
ESD (MIL-STD-883, M3015, Class 3A)
>4000
V
Operating Junction Temperature Range
-55 to +150
C
Storage Temperature Range
-65 to +150
C
Input Voltage
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating
only; functional operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation
Conditions" may effect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
RANGE
UNITS
Output Voltage Range
1.275 to 23
VDC
1.5 to 25
VDC
-55 to +125
°C
5
°C/W
Input Output Differential
3/
Case Operating Temperature Range
Thermal Resistance, Junction to case JC
ELECTRICAL PERFORMANCE CHARACTERISTICS
Unless otherwise specified, -55°C<TC<+125°C
PARAMETER
SYM
Reference Voltage 2/ 3/
VREF
CONDITIONS (P  PMAX
1.5V < VIN - VOUT < 15V, 10mA < IOUT < 1.0A
MIN
MAX
UNITS
1.210
1.275
V
Line Regulation 2/ 3/
VOUT ILOAD = 10mA, 1.5V < VIN - VOUT < 15V
VIN
-
0.25
%
Load Regulation 2/ 3/
VOUT
IOUT
10mA < IOUT < 1.0A, VIN - VOUT = 3V
-
0.3
%
Dropout Voltage 2/ 4/
VDROP
VREF = 1%, IOUT = 1.0A
-
1.30
V
Adjust Pin Current 2/
-
-
120
µA
Adjust Pin Current Change 2/
-
-
5
µA
10 mA < IOUT < 1A, 1.5V < VIN - VOUT < 15V
Current Limit 2/ 6/
IMAX
VIN - VOUT = 5V
VIN - VOUT < 25V
1.5
0.047
-
A
A
Minimum Load Current 5/
IMIN
VIN - VOUT = 25V
-
10
mA
60
-
dB
Ripple Rejection 3/
-
IOUT = 1.0A, VIN - VOUT = 3V, f = 120Hz,
CADJ = COUT = 25µF
Thermal Regulation
-
30ms pulse, TC = +25°C
-
0.04
%/W
VREF Long-Term Stability 5/
-
Burn In: TC = +125°C @ 1000hrs minimum, tested @ 25°C
-
0.3
%
Notes:
1/ For Compliance with MIL-STD-883 Rev. C current density specification, the RH1086MK is derated to 1.0 Amp but is capable of 1.5Amps.
2/ Specification derated to reflect Total Dose exposure to 100Krad (Si) @ +25°C.
3/ Line and load regulation are guaranteed up to the maximum power dissipation of 15W. Power dissipation is determined by the input/output
differential voltage and the output current. Guaranteed maximum power dissipation will not be available over the full input/output voltage
range.
4/ Dropout voltage is specified over the full output current range of the device.
5/ Not tested. Shall be guaranteed by design, characterization, or correlation to other tested parameters.
6/ Pulsed @ <10% duty cycle @ +25°C (See Note 1).
SCD8657 Rev G 6/21/10
2
Aeroflex Plainview
60
50
40
Maximum Power
Dissipation
(Watts)
30
Both Regulators
20
1 Regulator
10
0
0
20
40
60
80
100
120
140
Case Temperature (°C)
FIGURE 2 – MAXIMUM POWER vs CASE TEMPERATURE
The maximum Power dissipation is limited by the thermal shutdown function of each regulator chip in the VG8657/8658. The
graph above represents the achievable power before the chip shuts down. The first line in the graph represents the maximum
power dissipation of the VG8657/8658 with one regulator on (the other off) and the other line represents both regulators on
dissipating equal power. If both regulators are on and one regulator is dissipating more power that the other, the maximum power
dissipation of the VG8657/8658 will fall between the two lines. This graph is based on the maximum junction temperature of
150°C and a thermal resistance (JC) of 5°C/W.
SCD8657 Rev G 6/21/10
3
Aeroflex Plainview
MINIMUM INPUT/OUTPUT DIFFERENTIAL (V)
See Note 1, pg 2.
2
1
TJ = – 55°C
TJ = 25°C
TJ = 150°C
See
pg2.
3.
See Note
Note13,
1, pg
0
1
0.5
OUTPUT CURRENT (A)
0
FIGURE 3 – RH1086 SHORT CIRCUIT CURRENT
FIGURE 4 – RH1086 DROPOUT VOLTAGE
TYPICAL CURVE
VRG8657/58
VIN
1.5
Vout
10µF
Tant.
VREF
R1
10µF
Tant.
ADJ
VREF = 1.25V, IADJ = 50µA
+Reg = VOUT = VREF (1+R2/R1) + (IADJ x R2)
R2
FIGURE 5 – BASIC RH1086 ADJUSTABLE REGULATOR APPLICATION
SCD8657 Rev G 6/21/10
4
Aeroflex Plainview
TABLE I – PIN NUMBERS vs FUNCTION
PIN
FUNCTION
1
POS_ADJ_1
2
POS_VOUT_1
3
POS_VIN_1
4
POS_ADJ_2
5
POS_VIN_2
6
POS_VOUT_2
.200
.100
.108
.123
ø .010
M
CBA
.150 REF.
ø.145 THRU
2x .028
MAX.
6
5
2° MAX. TYP.
4
.720 ±.020
MEASURED
LEAD TIP
.415
.2075
–C–
1
2
3
ESD/PIN 1
IDENT
.230 MIN
.415 SQ
R.065 TYP.
4 PLCS
.655
–B–
.122
±.003
ø .010
BCA
.220 MAX.
±.005
–A–
.040
Notes:
1. Dimension Tolerance: ±.005 inches
2. Package contains BeO substrate
3. Case electrically isolated
.030 DIA.
±.002
ø .010
M
CBA
FIGURE 6 – PACKAGE OUTLINE — THRU-HOLE POWER PACKAGE
SCD8657 Rev G 6/21/10
5
Aeroflex Plainview
TABLE II – PIN NUMBERS vs FUNCTION
PIN
FUNCTION
1
POS_ADJ_1
2
POS_VOUT_1
3
POS_VIN_1
4
POS_ADJ_2
5
POS_VIN_2
6
POS_VOUT_2
.200
.100
.108
.123
ø .010
.150 REF.
CBA
ø.145 THRU
2x .028
MAX.
M
6
5
.060
4
.415
.886 ±.020
.2075
–C–
1
2
3
ESD/PIN 1
IDENT
.415 SQ
R.065 TYP.
4 PLCS
.655
–B–
.122
±.003
ø .010
BCA
.220 MAX.
±.005
–A–
.020
.040
.030 DIA.
±.002
ø .010
M
CBA
Notes:
1. Dimension Tolerance: ±.005 inches
2. Package contains BeO substrate
3. Case electrically isolated
FIGURE 7 – PACKAGE OUTLINE — SURFACE MOUNT POWER PACKAGE
SCD8657 Rev G 6/21/10
6
Aeroflex Plainview
ORDERING INFORMATION
MODEL
DSCC SMD #
SCREENING
Military Temperature, -55°C to +125°C
Screened in accordance with MIL-PRF-38534, Class K.
VRG8657-S
VRG8657-7
PACKAGE
6 Lead Thru-Hole
Power Pkg
Commercial Flow, +25°C testing only
-
VRG8658-S
Military Temperature, -55°C to +125°C
Screened in accordance with MIL-PRF-38534, Class K
VRG8658-7
Commercial Flow, +25°C testing only
VRG8657-201-1S
VRG8657-201-2S
5962-0920102KXC
5962-0920102KXA
VRG8658-201-1S
VRG8658-201-2S
5962-0920102KYC
5962-0920102KYA
6 Lead Surface
Mount Power Pkg
6 Lead Thru-Hole
Power Pkg
In accordance with DSCC SMD
6 Lead Surface
Mount Power Pkg
EXPORT CONTROL:
EXPORT WARNING:
This product is controlled for export under the International Traffic in
Arms Regulations (ITAR). A license from the U.S. Department of
State is required prior to the export of this product from the United
States.
Aeroflex’s military and space products are controlled for export under
the International Traffic in Arms Regulations (ITAR) and may not be
sold or proposed or offered for sale to certain countries. (See ITAR
126.1 for complete information.)
PLAINVIEW, NEW YORK
Toll Free: 800-THE-1553
Fax: 516-694-6715
INTERNATIONAL
Tel: 805-778-9229
Fax: 805-778-1980
NORTHEAST
Tel: 603-888-3975
Fax: 603-888-4585
SE AND MID-ATLANTIC
Tel: 321-951-4164
Fax: 321-951-4254
WEST COAST
Tel: 949-362-2260
Fax: 949-362-2266
CENTRAL
Tel: 719-594-8017
Fax: 719-594-8468
www.aeroflex.com
[email protected]
Aeroflex Microelectronic Solutions reserves the right to
change at any time without notice the specifications, design,
function, or form of its products described herein. All
parameters must be validated for each customer's application
by engineering. No liability is assumed as a result of use of
this product. No patent licenses are implied.
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused
and the Linear Technology logo are registered trademarks and RH1086 are a copyright of Linear Technology Corporation.
SCD8657 Rev G 6/21/10
7
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
REVISION RECORD
REV
0
A
B
DESCRIPTION
DATE
INITIAL RELEASE
PAGE 11, FIGURES 6, 7, CHANGED θja AND θjc.
PAGE 3, PARAGRAPH 3.8 CHANGED VERBIAGE ADDED “HEREIN” AFTER TABLE 1.
06/02/98
09/24/99
03/07/01
PAGE 4, PARAGRAPH 5.0 CHANGED VERBIAGE ADDED “HEREIN” AFTER TABLE 3.
PARAGRAPH 5.2 ADDED “HEREIN” AFTER TABLE 2.
PARAGRAPH 6.2 ADDED “HEREIN” AFTER TABLE 3.
PAGE 5, 6.3 CHANGED VERBIAGE ADDED “HEREIN” AFTER TABLE 3.
C
• REMOVED THE “M” FROM THE DEVICE TITLE, THROUGHOUT THE SPEC, TO MATCH THE
07/16/02
DATA SHEET AND RPL.
• PAGE 3, PARAGRAPH 3.6 CHANGED TO REFLECT ONLY FIGURE 1 FOR BOTH DEVICE
OPTIONS.
PARAGRAPH 3.7.1, CHANGED THE DOSAGE RATE FROM “APPROXIMATELY 20 RADS PER
SECOND” TO “LESS THAN OR EQUAL TO 10 RADS PER SECOND”.
PARAGRAPH 3.7.3, NOW REFLECTS TOTAL DOSE BIAS AS FIGURE 2.
• PAGE 4, PARAGRAPH 5.5, NOW REFLECTS BURN-IN CIRCUITS AS FIGURES 3 AND 4.
PARAGRAPH 5.6, NOW REFLECTS CASE OUTLINES AS FIGURES 5 AND 6.
PARAGRAPH 5.7, NOW REFLECTS TERMINAL CONNECTIONS AS FIGURES 7 AND 8.
PARAGRAPH 6.1 CHANGED QUALITY ASSURANCE PROVISIONS TO STATE THAT LTC IS
QML CERTIFIED AND THAT RAD HARD CANDIDATES ARE ASSEMBLED ON QUALIFIED
CLASS S MANUFACTURING LINES.
• PAGES 6 THROUGH 12, ALL FIGURE TITLES CHANGED TO HAVE DEVICE OPTIONS AND
PACKAGE TYPES AT TOP OF PAGE, AND HAVE ALL FIGURES AT BOTTOM OF PAGE.
• CONVERSION OF SPECIFICATION FROM WORD PERFECT TO MICROSOFT WORD.
CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE PART
REVISION
INDEX
PAGE NO.
REVISION
1
G
2
G
3
G
4
G
5
G
6
G
APPLICATION
8
G
9
G
10
G
11
G
12
G
13
G
14
G
15
G
16
G
LINEAR TECHNOLOGY CORPORATION
MILPITAS, CALIFORNIA
TITLE: MICROCIRCUIT, LINEAR,
RH1086BHK, 0.5A AND RH1086BKK, 1.5A,
LOW DROPOUT POSITIVE
REGULATOR DICE
ORIG
DSGN
ENGR
MFG
CM
QA
PROG
FUNCT
7
G
SIZE
SIGNOFFS
DATE
CAGE
CODE
64155
DRAWING
NUMBER
05-08-5134
CONTRACT:
FOR OFFICIAL USE ONLY
LINEAR TECHNOLOGY CORPORATION
Page 1 of 16
REV
G
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
REVISION RECORD
REV
DESCRIPTION
DATE
D
CHANGED RH1086H TO RH1086BHK AND RH1086K TO RH1086BKK THROUGHOUT SPEC.
10/28/03
E
•
PAGE 3, CHANGED INITIAL RATE OF RADS TO 240 RADS/SEC.
03/22/05
F
•
•
05/21/08
G
•
PAGE 4, PARAGRAPH 3.7.1 CHANGED VERBIAGE.
PAGE 5, PARAGRAPH 5.8 CHANGED ALLOY 42 TO ALLOY 52 TO3 PACKAGE
REQUIREMENT.
PAGE 10, FIGURE 4 STATIC BURN-IN CIRCUIT CHANGED TO 04-06-0302 PER ENG.
•
PAGE 16, CHANGED RH CANNED SAMPLE TABLE III FOR QUALIFYING DICE SALES
ADDED TEMPERATURE CYCLE, CONSTANT ACCELERATION & REMOVED PIND TEST.
FOR OFFICIAL USE ONLY
LINEAR TECHNOLOGY CORPORATION
Page 2 of 16
SPEC NO. 05-08-5134 REV. G
1.0
SCOPE:
1.1
2.0
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
This specification defines the performance and test requirements for a microcircuit processed to a
space level manufacturing flow.
APPLICABLE DOCUMENTS:
2.1
Government Specifications and Standards: the following documents listed in the Department of
Defense Index of Specifications and Standards, of the issue in effect on the date of solicitation,
form a part of this specification to the extent specified herein.
SPECIFICATIONS:
2.2
3.0
MIL-PRF-38535
Integrated Circuits (Microcircuits) Manufacturing, General Specification
for
MIL-STD-883
Test Method and Procedures for Microcircuits
MIL-STD-1835
Microcircuits Case Outlines
Order of Precedence: In the event of a conflict between the documents referenced herein and the
contents of this specification, the order of precedence shall be this specification, MIL-PRF-38535
and other referenced specifications.
REQUIREMENTS:
3.1
General Description: This specification details the requirements for the RH1086BHK, 0.5A and
RH1086BKK, 1.5A, Low Dropout Positive Regulator Dice and Element Evaluation Test Samples,
processed to space level manufacturing flow as specified herein.
3.2
Part Number:
3.3
3.2.1
OPTION 1 – RH1086BHK Dice
3.2.2
OPTION 2 – RH1086BKK Dice
Special Handling of Dice: Rad Hard dice require special handling as compared to standard IC
dice. Rad Hard dice are susceptible to surface damage due to the absence of silicon nitride
passivation as on standard dice. Silicon nitride protects the dice surface from scratches by it’s hard
and dense properties. The passivation on Rad Hard dice is silicon dioxide which is much “softer”
than silicon nitride.
LTC recommends that dice handling be performed with extreme care so as to protect the dice
surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon
tipped vacuum wand. This wand can be made by pushing a small diameter of Teflon tubing onto
the tip of a steel tipped wand. The inside diameter of the Teflon tip should match the dice size for
efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to dice
surface. Ensure the Teflon tip remains clean from debris by inspecting under stereo scope.
During die attach, care must be exercised to ensure no tweezers touch the top of the dice.
LINEAR TECHNOLOGY CORPORATION
Page 3 of 16
SPEC NO. 05-08-5134 REV. G
3.4
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
The Absolute Maximum Ratings:
Power Dissipation
. . . . . . .
Input to Output Voltage Differential . .
Operating Junction Temperature Range
Control Section
Power Transistor
Storage Temperature Range
. . . .
.
Lead Temperature (Soldering, 10 sec)
. . . . . .
Internally Limited
. . . . . . . .
25V
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
-55°C to +150°C
-55°C to +200°C
. . . . . . . . -65°C to +150°C
. . . . . . . .
300°C
3.5
Design, Construction, and Physical Dimensions: Detail design, construction, physical dimensions,
and electrical requirements shall be specified herein.
3.6
Outline Dimensions and Pad Functions: Dice outline dimensions, pad functions, and locations shall
be specified in Figure 1.
3.7
Radiation Hardness Assurance (RHA):
3.7.1
The manufacturer shall perform a lot sample test as an internal process monitor for total
dose radiation tolerance. The sample test is performed with MIL-STD-883 TM1019
Condition A as a guideline..
3.7.2
For guaranteed radiation performance to MIL-STD-883, Method 1019, total dose
irradiation, the manufacturer will provide certified RAD testing and report through an
independent test laboratory when required as a customer purchase order line item.
3.7.3
Total dose bias circuit is specified in Figure 2.
3.8
Wafer (or Dice) Probe: Dice shall be 100% probed at Ta = +25°C to the limits shown in Table I
herein. All reject dice shall be removed from the lot. This testing is normally performed prior to
dicing the wafer into chips. Final specifications after assembly are sample tested during the
element evaluation.
3.9
Wafer Lot Acceptance: Wafer lot acceptance shall be in accordance with MIL-PRF-38535,
Appendix A, except for the following: Top side glassivation thickness shall be a minimum of
4KÅ.
3.10
Wafer Lot Acceptance Report: SEM is performed per MIL-STD-883, Method 2018. Copies of
SEM photographs shall be supplied with the Wafer Lot Acceptance Report as part of a Space Data
Pack when specified as a customer purchase order line item.
3.11
Traceability: Wafer Diffusion Lot and Wafer traceability shall be maintained through Quality
Conformance Inspection.
4.0
QUALITY CONFORMANCE INSPECTION: Quality Conformance Inspection shall consist of the tests
and inspections specified herein.
5.0
SAMPLE ELEMENT EVALUATION: A sample from each wafer supplying dice shall be assembled and
subjected to element evaluation per Table III herein.
LINEAR TECHNOLOGY CORPORATION
Page 4 of 16
SPEC NO. 05-08-5134 REV. G
6.0
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
5.1
100 Percent Visual Inspection: All dice supplied to this specification shall be inspected in
accordance with MIL-STD-883, Method 2010, Condition A. All reject dice shall be removed from
the lot.
5.2
Electrical Performance Characteristics for Element Evaluation: The electrical performance
characteristics shall be as specified in Table I and Table II herein.
5.3
Sample Testing: Each wafer supplying dice for delivery to this specification shall be subjected to
element evaluation sample testing. No dice shall be delivered until all the lot sample testing has
been performed and the results found to be acceptable unless the customer supplies a written
approval for shipment prior to completion of wafer qualification as specified in this specification.
5.4
Part Marking of Element Evaluation Sample Includes:
5.4.1
LTC Logo
5.4.2
LTC Part Number
5.4.3
Date Code
5.4.4
Serial Number
5.4.5
ESD Identifier per MIL-PRF-38535, Appendix A
5.4.6
Diffusion Lot Number
5.4.7
Wafer Number
5.5
Burn-In Requirement: Burn-In circuit for TO39 package is specified in Figure 3 and Burn-In
circuit for TO3 package is specified in Figure 4.
5.6
Mechanical/Packaging Requirements: Case Outline and Dimensions are in accordance with
Figure 5 and Figure 6.
5.7
Terminal Connections: The terminal connections shall be as specified in Figure 7 and Figure 8.
5.8
Lead Material and Finish: The lead material and finish shall be Kovar for device option 1 and
Alloy 52 for device option 2, with hot solder dip (Finish letter A) in accordance with MIL-PRF38535.
VERIFICATION (QUALITY ASSURANCE PROVISIONS)
6.1
Quality Assurance Provisions: Quality Assurance provisions shall be in accordance with MILPRF-38535. Linear Technology is a QML certified company and all Rad Hard candidates are
assembled on qualified Class S manufacturing lines.
6.2
Sampling and Inspection: Sampling and Inspection shall be in accordance with Table III herein.
6.3
Screening: Screening requirements shall be in accordance with Table III herein.
LINEAR TECHNOLOGY CORPORATION
Page 5 of 16
SPEC NO. 05-08-5134 REV. G
6.4
6.5
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
Source Inspection:
6.4.1
The manufacturer will coordinate Source Inspection at wafer lot acceptance and pre-seal
internal visual.
6.4.2
The procuring activity has the right to perform source inspection at the supplier’s facility
prior to shipment for each lot of deliverables when specified as a customer purchase order
line item. This may include wafer lot acceptance, die visual, and final data review.
Deliverable Data: Deliverable data that will ship with devices when a Space Data Pack is ordered:
6.5.1
Lot Serial Number Sheets identifying all Canned Sample devices accepted through final
inspection by serial number.
6.5.2
100% attributes (completed element evaluation traveler).
6.5.3
Element Evaluation variables data, including Burn-In and Op Life
6.5.4
SEM photographs (3.10 herein)
6.5.5
Wafer Lot Acceptance Report (3.9 herein)
6.5.6
A copy of outside test laboratory radiation report if ordered
6.5.7
Certificate of Conformance certifying that the devices meet all the requirements of this
specification and have successfully completed the mandatory tests and inspections herein.
Note: Items 6.5.1 and 6.5.7 will be delivered as a minimum, with each shipment.
7.0
Packaging Requirements: Packaging shall be in accordance with Appendix A of MIL-PRF-38535. All dice
shall be packaged in multicavity containers composed of conductive, anti-static, or static dissipative
material with an external conductive field shielding barrier.
LINEAR TECHNOLOGY CORPORATION
Page 6 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
DICE OUTLINE DIMENSIONS AND PAD FUNCTIONS
OPTION 1, RH1086BHK, 0.5A DICE AND OPTION 2, RH1086BKK, 1.5A DICE
“H” OR “K” (DEPENDING ON THE DEVICE OPTION)
WILL BE REFLECTED HERE
FIGURE 1
LINEAR TECHNOLOGY CORPORATION
Page 7 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
TOTAL DOSE BIAS CIRCUIT
FIGURE 2
LINEAR TECHNOLOGY CORPORATION
Page 8 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
TO39 STATIC BURN-IN CIRCUIT
OPTION 1, T039 METAL CAN / 3 LEADS
FIGURE 3
LINEAR TECHNOLOGY CORPORATION
Page 9 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
STATIC BURN-IN CIRCUIT
OPTION #2, TO3 / 2 LEADS
FIGURE 4
LINEAR TECHNOLOGY CORPORATION
Page 10 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
DEVICE OPTION # 1
(H) TO39 METAL CAN / 3 LEADS CASE OUTLINE
FIGURE 5
θja = +150°C/W
θjc = +40°C/W
LINEAR TECHNOLOGY CORPORATION
Page 11 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
DEVICE OPTION # 2
(K) TO3 METAL CAN / 2 LEADS CASE OUTLINE
θja = +35°C/W
θjc = +3°C/W
FIGURE 6
LINEAR TECHNOLOGY CORPORATION
Page 12 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
TERMINAL CONNECTIONS
DEVICE OPTION #1, TO39 / 3 LEAD METAL CAN
FIGURE 7
DEVICE OPTION #2, TO3 / 2 LEAD METAL CAN
FIGURE 8
LINEAR TECHNOLOGY CORPORATION
Page 13 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
TABLE I DICE ELECTRICAL CHARACTERISTICS – Element Evaluation (Note 1)
LINEAR TECHNOLOGY CORPORATION
Page 14 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
TABLE II ELECTRICAL CHARACTERISTICS (POSTIRRADIATION)
TA = 25°C unless otherwise noted.
LINEAR TECHNOLOGY CORPORATION
Page 15 of 16
SPEC NO. 05-08-5134 REV. G
RH1086BHK, 0.5A AND RH1086BKK , 1.5A
LOW DROPOUT POSITIVE REGULATOR DICE
TABLE III RH ELEMENT EVALUATION TABLE QUALLIFICATION OF DICE SALES
LINEAR TECHNOLOGY CORPORATION
Page 16 of 16
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
REVISION RECORD
REV
DESCRIPTION
DATE
0
INITIAL RELEASE
02/11/09
A
RH1185MK DICE/DWF DATA SHEET AMENDED. PAGE 11, PRE-IRRADIATION
ELECTRICAL TEST LIMITS CHANGED REFERENCE VOLTAGE FROM -1.1V MIN,
1.1V MAX TO -2.344V MIN., -2.396V MAX, WITH A TYPICAL OF -2.37 V.
12/02/09
CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE PART
REVISION
INDEX
REVISION
INDEX
PAGE NO.
REVISION
PAGE NO.
REVISION
1
A
2
A
3
A
4
A
5
A
6
A
7
A
APPLICATION
9
A
10
A
11
A
12
A
13
A
LINEAR TECHNOLOGY
CORPORATION
MILPITAS, CALIFORNIA
ORIG
DSGN
ENGR
MFG
CM
QA
PROG
FUNCT
8
A
TITLE:
MICROCIRCUIT, LINEAR, RH1185MK
DICE NEGATIVE REGULATOR WITH
ADJUSTABLE CURRENT LIMIT
SIZE
SIGNOFFS
DATE
CAGE
CODE
DRAWING NUMBER
REV
64155
05-08-5232
A
CONTRACT:
FOR OFFICIAL USE ONLY
LINEAR TECHNOLOGY CORPORATION
PAGE 1 OF 13
SPEC NO. 05-08-5232 REV. A
1.0
SCOPE:
1.1
2.0
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
This specification defines the performance and test requirements for a microcircuit processed to a space
level manufacturing flow.
APPLICABLE DOCUMENTS:
2.1
Government Specifications and Standards: the following documents listed in the Department of
Defense Index of Specifications and Standards, of the issue in effect on the date of solicitation, form a
part of this specification to the extent specified herein.
SPECIFICATIONS:
2.2
3.0
MIL-PRF-38535
Integrated Circuits (Microcircuits) Manufacturing, General Specification for
MIL-STD-883
Test Method and Procedures for Microcircuits
MIL-STD-1835
Microcircuits Case Outlines
Order of Precedence: In the event of a conflict between the documents referenced herein and the
contents of this specification, the order of precedence shall be this specification, MIL-PRF-38535 and
other referenced specifications.
REQUIREMENTS:
3.1
General Description: This specification details the requirements for the RH1185MK, DICE and
Element Evaluation Test Samples, processed to space level manufacturing flow as specified herein.
3.2
Part Number:
3.3
Special Handling of Dice: Rad Hard dice require special handling as compared to standard IC dice.
Rad Hard dice are susceptible to surface damage due to the absence of silicon nitride passivation as on
standard dice. Silicon nitride protects the dice surface from scratches by its hard and dense properties.
The passivation on Rad Hard dice is silicon dioxide which is much “softer” than silicon nitride.
RH1185MKDice
LTC recommends that dice handling be performed with extreme care so as to protect the dice surface
from scratches. If the need arises to move the die around from the chip tray, use a Teflon tipped
vacuum wand. This wand can be made by pushing a small diameter of Teflon tubing onto the tip of a
steel tipped wand. The inside diameter of the Teflon tip should match the dice size for efficient pickup.
The tip of the Teflon should be cut square and flat to ensure good vacuum to dice surface. Ensure the
Teflon tip remains clean from debris by inspecting under stereo scope.
During die attach, care must be exercised to ensure no tweezers touch the top of the dice.
LINEAR TECHNOLOGY CORPORATION
PAGE 2 OF 13
SPEC NO. 05-08-5232 REV. A
3.4
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
The Absolute Maximum Ratings:
Input Voltage
. . . . .
Input - Output Differential
. . .
FB Voltage
. . . . . . . .
REF Voltage
. . . . . . .
Output Voltage . . . . . . .
Output Reverse Voltage
. . . .
Operating Ambient Temperature Range
4.0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
Operating Junction Temperature Range
Control Section . . . . . . . . .
Power Transistor Section . . . . . .
. . . . . .
Storage Temperature Range
. . .
Lead Temperature (Soldering, 10 sec)
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . . .
35V
. . . .
30V
7V
. . . . .
. . . . .
7V
30V
. . . . .
2V
. . . . .
. -55°C to 125°C
.
.
.
.
.
-55°C to +150°C
-55°C to +175°C
-65°C to +150°C
. . . +300°C
3.5
Design, Construction, and Physical Dimensions: Detail design, construction, physical dimensions, and
electrical requirements shall be specified herein.
3.6
Outline Dimensions and Pad Functions: Dice outline dimensions, pad functions, and locations shall be
specified in Figure 1.
3.7
Radiation Hardness Assurance (RHA):
3.7.1
The manufacturer shall perform a lot sample test as an internal process monitor for total
dose radiation tolerance. The sample test is performed with MIL-STD-883 TM1019
Condition A as a guideline.
3.7.2
For guaranteed radiation performance to MIL-STD-883, Method 1019, total dose irradiation,
the manufacturer will provide certified RAD testing and report through an independent test
laboratory when required as a customer purchase order line item.
3.7.3
Total dose bias circuit is specified in Figure 2.
3.8
Wafer (or Dice) Probe: Dice shall be 100% probed at Ta = +25°C to the limits shown in Table I
herein. All reject dice shall be removed from the lot. This testing is normally performed prior to dicing
the wafer into chips. Final specifications after assembly are sample tested during the element
evaluation.
3.9
Wafer Lot Acceptance: Wafer lot acceptance shall be in accordance with MIL-PRF-38535, Appendix
A, except for the following: Top side glassivation thickness shall be a minimum of 4KÅ.
3.10
Wafer Lot Acceptance Report: SEM is performed per MIL-STD-883, Method 2018. Copies of SEM
photographs shall be supplied with the Wafer Lot Acceptance Report as part of a Space Data Pack
when specified as a customer purchase order line item.
3.11
Traceability: Wafer Diffusion Lot and Wafer traceability shall be maintained through Quality
Conformance Inspection.
QUALITY CONFORMANCE INSPECTION: Quality Conformance Inspection shall consist of the tests and
inspections specified herein.
LINEAR TECHNOLOGY CORPORATION
PAGE 3 OF 13
SPEC NO. 05-08-5232 REV. A
5.0
6.0
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
SAMPLE ELEMENT EVALUATION: A sample from each wafer supplying dice shall be assembled and
subjected to element evaluation per Table III herein.
5.1
100 Percent Visual Inspection: All dice supplied to this specification shall be inspected in accordance
with MIL-STD-883, Method 2010, Condition A. All reject dice shall be removed from the lot.
5.2
Electrical Performance Characteristics for Element Evaluation: The electrical performance
characteristics shall be as specified in Table I and Table II herein.
5.3
Sample Testing: Each wafer supplying dice for delivery to this specification shall be subjected to
element evaluation sample testing. No dice shall be delivered until all the lot sample testing has been
performed and the results found to be acceptable unless the customer supplies a written approval for
shipment prior to completion of wafer qualification as specified in this specification.
5.4
Part Marking of Element Evaluation Sample Includes:
5.4.1
LTC Logo
5.4.2
LTC Part Number
5.4.3
Date Code
5.4.4
Serial Number
5.4.5
ESD Identifier per MIL-PRF-38535, Appendix A
5.4.6
Diffusion Lot Number
5.4.7
Wafer Number
5.5
Burn-In Requirement: Burn-In circuit for TO3 package is specified in Figure 3.
5.6
Mechanical/Packaging Requirements: Case Outline and Dimensions are in accordance with
Figure 4.
5.7
Terminal Connections: The terminal connections shall be as specified in Figure 5.
5.8
Lead Material and Finish: The lead material and finish shall be alloy 52 with hot solder dip (Finish
letter A) in accordance with MIL-PRF-38535.
VERIFICATION (QUALITY ASSURANCE PROVISIONS)
6.1
Quality Assurance Provisions: Quality Assurance provisions shall be in accordance with MIL-PRF38535. Linear Technology is a QML certified company and all Rad Hard candidates are assembled on
qualified Class S manufacturing lines.
6.2
Sampling and Inspection: Sampling and Inspection shall be in accordance with Table III herein.
6.3
Screening: Screening requirements shall be in accordance with Table III herein.
LINEAR TECHNOLOGY CORPORATION
PAGE 4 OF 13
SPEC NO. 05-08-5232 REV. A
6.4
6.5
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
Source Inspection:
6.4.1
The manufacturer will coordinate Source Inspection at wafer lot acceptance and pre-seal
internal visual.
6.4.2
The procuring activity has the right to perform source inspection at the supplier’s facility prior
to shipment for each lot of deliverables when specified as a customer purchase order line item.
This may include wafer lot acceptance, die visual, and final data review.
Deliverable Data: Deliverable data that will ship with devices when a Space Data Pack is ordered:
6.5.1
Lot Serial Number Sheets identifying all Canned Sample devices accepted through final
inspection by serial number.
6.5.2
6.5.3
100% attributes (completed element evaluation traveler).
Element Evaluation variables data, including Burn-In and Op Life
6.5.4
SEM photographs (3.10 herein)
6.5.5
Wafer Lot Acceptance Report (3.9 herein)
6.5.6
A copy of outside test laboratory radiation report if ordered
6.5.7
Certificate of Conformance certifying that the devices meet all the requirements of this
specification and have successfully completed the mandatory tests and inspections herein.
Note: Items 6.5.1 and 6.5.7 will be delivered as a minimum, with each shipment.
7.0
Packaging Requirements: Packaging shall be in accordance with Appendix A of MIL-PRF-38535. All dice
shall be packaged in multicavity containers composed of conductive, anti-static, or static dissipative material
with an external conductive field shielding barrier.
LINEAR TECHNOLOGY CORPORATION
PAGE 5 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
DICE OUTLINE DIMENSIONS AND PAD FUNCTIONS
FIGURE 1
LINEAR TECHNOLOGY CORPORATION
PAGE 6 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
TOTAL DOSE BIAS CIRCUIT
FIGURE 2
LINEAR TECHNOLOGY CORPORATION
PAGE 7 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
BURN-IN CIRCUIT
FIGURE 3
LINEAR TECHNOLOGY CORPORATION
PAGE 8 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
TO3, 4 LEADS, CASE OUTLINE
θja = +35°C/W
θjc = +3°C/W
FIGURE 4
LINEAR TECHNOLOGY CORPORATION
PAGE 9 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
TERMINAL CONNECTIONS
FIGURE 5
LINEAR TECHNOLOGY CORPORATION
PAGE 10 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
TABLE I DICE ELECTRICAL CHARACTERISTICS – Element Evaluation (Note 1)
VIN = 7.4V, VOUT = 5V, IOUT = 1mA, RLIM = 4.02k, unless otherwise noted.
LINEAR TECHNOLOGY CORPORATION
PAGE 11 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
TABLE II ELECTRICAL CHARACTERISTICS – Post-Irradiation (Note 5)
LINEAR TECHNOLOGY CORPORATION
PAGE 12 OF 13
SPEC NO. 05-08-5232 REV. A
RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT
TABLE III RH ELEMENT EVALUATION TABLE QUALIFICATION OF DICE SALES
RH CANNED SAMPLE TABLE FOR QUALIFYING DICE SALES
SUBGROUP
1
2
3
4
5
6
7
CLASS
K/S
H/B
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
OPERATION
METHOD
2018
MIL-STD-883
CONDITION
N/A
X
SEM
ELEMENT ELECTRICAL (WAFER SORT @ 25°C)
ELEMENT VISUAL (2nd OP)
INTERNAL VISUAL (3rd OP)
DIE SHEAR MONITOR
BOND PULL MONITOR
STABILIZATION BAKE
TEMPERATURE CYCLE
CONSTANT ACCELERATION
FINE LEAK
GROSS LEAK
FIRST ROOM ELECTRICAL - READ & RECORD
(REPLACE ANY ASSEMBLY-RELATED REJECTS)
ELECT. READ & RECORD @ +125°C or +150°C, -55°C
X
X
X
BURN-IN: +125°C/240 hrs. or +150°C/120 hrs.
POST BURN-IN ELECTRICAL @ 25°C READ & RECORD
PRE OP-LIFE ELECTRICAL @ 25°C READ & RECORD
1015
+125°C MINIMUM
240 HOURS
X
X
X
OPERATING LIFE: +125°C/1000 hrs. or +150°C/500 hrs.
POST OP-LIFE ELECT. (R&R 25°C, +125°C or +150°C, -55°C)
WIRE BOND EVALUATION
1005
+125°C MINIMUM
1000 HOURS
X
2010
2010
2019
2011
1008
1010
2001
1014
1014
C
C
E
A
C
ASSEMBLED PARTS ONLY
43 (3)
2011
NOTE:
LTC is not qualified to process to MIL-PRF-38534. This is an LTC imposed element evaluation that follows
MIL-STD-883 test methods and conditions. Please note the quantity and accept number from a Sample Size Series of
15%, accept on 3, and note that the actual sample and accept number does not begin until Subgroup 6.
NOTE:
Tests within Subgroup 5 may be performed in any sequence.
NOTE:
LTC's radiation tolerant (RH) die has a topside glassivation thickness of 4KÅ minimum.
NOTE:
Sample sizes on the travelers may be larger than that indicated in the above table; however, the larger sample size is
to accommodate extra units for replacement devices in the event of equipment or operator error and for assembly
related rejects in Subgroup 6, and for Wire Bond Evaluation, Subgroup 7. The larger sample size is at all times
kept segregated and, if used for qualification, has all the required processing imposed.
LINEAR TECHNOLOGY CORPORATION
A
A
QUANTITY
(ACCEPT NUMBER)
REF. METHOD 2018 FOR S/S
100%
100%
ASSEMBLED PARTS ONLY
PAGE 13 OF 13
15 (0) or 25 (1) - # of wires
Aeroflex Plainview
SEE TEST REPORT SUMMARY: LDO REGULATORS
Date:
Monday, March 02, 2009
Subject:
Details:
Summary of SEE Test data for VRG8651 Hybrid Devices
The VRG8651 consists of one LTC RH1086 Positive Voltage LDO Regulator and one LTC
RH1185 Negative LDO Voltage Regulator. These ICs are used in the following Aeroflex Voltage
Regulator products: VRG8651, VRG8652, VRG8657, VRG8658, VRG8662, and VRG8663
Test was performed on February 24, 2009 at Texas A & M university cyclotron. Steve Moyer, Tony Ward and
Surinder Seehra participated in the test from LMCSS Newtown. Other participants were Dan Clymer from Space
System Company Denver (customer representative) and Bill Stapor of Stapor Research, representative from
Government Program Office.
Four Hybrids containing both RH1185 and RH1086 devices were irradiated with Argon, Krypton and Xenon ions
with LET ranging from 5.6 to 60 MeV-cm2/mg. The fluence of ions was 1 E+06 during the single event transient
(SET) test and was 1 E+07 ions during the Single Event Latchup (SEL) test. Tests were performed on both
unfiltered devices and filtered devices. Unfiltered devices present data for any application of devices, whereas the
filtered devices represented ACSS application. Devices were irradiated under both applications of + 8 volts and +
15 volts.
Single Event Transients Data
Unfiltered Devices
When irradiated with xenon ions (LET = 40 to 60 MeV-cm2/mg) the RH1185 devices experienced many transients
with an amplitude of up to 10 Volts for a duration of up to 10 us. The amplitude and duration of transients
decreased when irradiated with ions of lower LET.
The RH1086 devices experienced transients with amplitude of up to 13 volts for a period of up to 50 uS. The
amplitude and duration of transients decreased when irradiated with ions of lower LET.
Filtered Devices
When irradiated with ions of LET of up to 60 MeV-cm2/mg, the RH1185 devices experienced no transients.
However, RH1086 devices experienced occasional very small transients. The effect of these transients needs to
be determined.
Single Event Latchup (SEL) data
The SEL test was performed by irradiating both RH1185 and RH1086 devices with Xenon ions with an LET of 40
MeV-cm2/mg at ion fluence of 1 E+07 ions/cm2. The LET of the ions was then increased to 60 MeV-cm2/mg and
with the same fluence of 1 E+07 ions/cm2. In each case, very little change in power supply current was observed
indicating no latch-up for both the devices.
It is concluded that the filter seems to do its job of filtering nearly all the transients. Some transients were
observed for the RH1086 devices. The effects of these transients need to be determined. In addition, none of
the devices suffered from Single Event Latchup.
Surinder S. Seehra
Senior Staff Engineer
Lockheed Martin Commercial Space Systems
100 Campus Drive, Newtown, PA 18940
ELDRS Report
10-006 100412 R1.3
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
Enhanced Low Dose Rate Sensitivity (ELDRS) Radiation Testing of the
RH1086MK Low Dropout Positive Adjustable Regulator for Linear
Technology
Customer: Linear Technology, PO# 54886L
RAD Job Number: 10-006
Part Type Tested: Linear Technology RH1086MK Low Dropout Positive Adjustable Regulator
Traceability Information: Fab lot# W10913024.1, Wafer# 17, Assembly lot: #540912.1. Information obtained
from Linear Technology PO#54886L. Date code marking on the package is 0941A, see Appendix A for a
photograph of the device and part markings.
Quantity of Units: 12 units total, 5 units for biased irradiation, 5 units for unbiased irradiation and 2 control
units. Serial numbers 4, 8, 11, 14, and 17 were biased during irradiation, serial numbers 19, 41, 60, 62, and 65
were unbiased during irradiation (all pins tied to ground) and serial numbers 149 and 153 were used as the
controls. See Appendix B for the radiation bias connection table.
Pre-Irradiation Burn-In: Burn-In performed by Linear Technology prior to receipt by RAD.
TID Dose Rate and Test Increments: 10mrad(Si)/s with readings at pre-irradiation, 10, 20, 30 and 50krad(Si).
TID Overtest and Post-Irradiation Anneal: No overtest. 24-hour room temperature anneal followed by a 168hour 100°C anneal. Both anneals shall be performed in the same electrical bias condition as the irradiations.
Electrical measurements shall be made following each anneal increment.
TID Test Standard: MIL-STD-883G, Method 1019.7, Condition D
TID Electrical Test Conditions: Pre-irradiation, and within one hour following each radiation exposure.
Test Hardware: LTS2020 Tester, 2101 Family Board, 0606 Fixture and RH1086K BGSS-020602 DUT Board
Facility and Radiation Source: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO using
the GB-150 low dose rate Co60 source. Dosimetry performed by CaF2 TLDs traceable to NIST. RAD’s
dosimetry has been audited by DSCC and RAD has been awarded Laboratory Suitability for MIL-STD-750 TM
1019.5.
Irradiation and Test Temperature: Ambient room temperature for irradiation and test controlled to 24°C±6°C
per MIL-STD-883.
Low Dose Rate Test Result: Units passed with only minor degradation to the VOUT
parameters and no significant degradation to any other measured parameter.
Further, the units do not exhibit ELDRS as defined in the current test method.
An ISO 9001:2008 and DSCC Certified Company
1
ELDRS Report
10-006 100412 R1.3
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
1.0. Overview and Background
It is well known that total dose ionizing radiation can cause parametric degradation and ultimately
functional failure in electronic devices. The damage occurs via electron-hole pair production, transport
and trapping in the dielectric regions. In advanced CMOS technology nodes (0.6μm and smaller) the
bulk of the damage is manifested in the thicker isolation regions, such as shallow trench or local
oxidation of silicon (LOCOS) oxides (also known as “birds-beak” oxides). However, many linear and
mixed signal devices that utilize bipolar minority carrier elements exhibit an enhanced low dose rate
sensitivity (ELDRS). At this time there is no known or accepted a priori method for predicting
susceptibility to ELDRS or simulating the low dose rate sensitivity with a “conventional” room
temperature 50-300rad(Si)/s irradiation (Condition A in MIL-STD-883G TM 1019.7). Over the past 10
years a number of accelerating techniques have been examined, including an elevated temperature
anneal, such as that used for MOS devices (see ASTM-F-1892 for more technical details) and irradiating
at various temperatures. However, none of these techniques have proven useful across the wide variety
of linear and/or mixed signal devices used in spaceborne applications.
The latest requirement incorporated in MIL-STD-883G TM 1019.7 requires that devices that could
potentially exhibit ELDRS “shall be tested either at the intended application dose rate, at a prescribed
low dose rate to an overtest radiation level, or with an accelerated test such as an elevated temperature
irradiation test that includes a parameter delta design margin”. While the recently released MIL-STD883 TM 1019.7 allows for accelerated testing, the requirements for this are to essentially perform a low
dose rate ELDRS test to verify the suitability of the acceleration method on the component of interest
before the acceleration technique can be instituted. Based on the limitations of accelerated testing and to
meet the requirements of MIL-STD-883G TM 1019.7 Condition D, we have performed an ELDRS test
at 10mrad(Si)/s.
2.0. Radiation Test Apparatus
The ELDRS testing described in this final report was performed using the facilities at Radiation Assured
Devices’ Longmire Laboratories in Colorado Springs, CO. The ELDRS source is a GB-150 irradiator
modified to provide a panoramic exposure. The Co-60 rods are held in the base of the irradiator heavily
shielded by lead. During the irradiation exposures the rod is raised by an electronic timer/controller and
the exposure is performed in air. The dose rate for this irradiator in this configuration ranges from
approximately 1mrad(Si)/s to a maximum of approximately 50rad(Si)/s as determined by the distance
from the source. For the low dose rate ELDRS testing described in this report, the devices are placed
approximately 2-meters from the Co-60 rods. The irradiator calibration is maintained by Radiation
Assured Devices’ Longmire Laboratories using thermoluminescent dosimeters (TLDs) traceable to the
National Institute of Standards and Technology (NIST). Figure 2.1 shows a photograph of the Co-60
irradiator at RAD’s Longmire Laboratory facility.
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Figure 2.1. Radiation Assured Devices’ Co-60 irradiator. The dose rate is obtained by positioning the
device-under-test at a fixed distance from the gamma cell. The dose rate for this irradiator varies from
approximately 50rad(Si)/s close to the rods down to <1mrad(Si)/s at a distance of approximately 4meters.
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3.0. Radiation Test Conditions
The RH1086MK low dropout positive adjustable regulator described in this final report was irradiated
under two different conditions, one when biased with a 30V single sided supply, and one when unbiased
with all pins tied to ground. See the TID Bias Table in Appendix A for the full bias circuits. In our
opinion these bias circuits satisfy the requirements of MIL-STD-883G TM1019.7 Section 3.9.3 Bias and
Loading Conditions which states “The bias applied to the test devices shall be selected to produce the
greatest radiation induced damage or the worst-case damage for the intended application, if known.
While maximum voltage is often worst case some bipolar linear device parameters (e.g. input bias
current or maximum output load current) exhibit more degradation with 0 V bias.”
The devices were irradiated to a maximum total ionizing dose level of 50krad(Si) with incremental
readings at 10, 20, 30 and 50krad(Si). Electrical testing occurred within one hour following the end of
each irradiation segment. For intermediate irradiations, the units were tested and returned to total dose
exposure within two hours from the end of the previous radiation increment. The ELDRS bias board
was positioned in the Co-60 cell to provide the required maximum of 10mrad(Si)/s and was located
inside a lead-aluminum enclosure. The lead-aluminum enclosure is required under MIL-STD-883G
TM1019.7 Section 3.4 that reads as follows: “Lead/Aluminum (Pb/Al) container. Test specimens shall
be enclosed in a Pb/Al container to minimize dose enhancement effects caused by low-energy, scattered
radiation. A minimum of 1.5 mm Pb, surrounding an inner shield of at least 0.7 mm Al, is required.
This Pb/Al container produces an approximate charged particle equilibrium for Si and for TLDs such as
CaF2. The radiation field intensity shall be measured inside the Pb/Al container (1) initially, (2) when
the source is changed, or (3) when the orientation or configuration of the source, container, or testfixture is changed. This measurement shall be performed by placing a dosimeter (e.g., a TLD) in the
device-irradiation container at the approximate test-device position. If it can be demonstrated that low
energy scattered radiation is small enough that it will not cause dosimetry errors due to dose
enhancement, the Pb/Al container may be omitted”.
The final dose rate within the lead-aluminum box was determined based on TLD dosimetry
measurements just prior to the beginning of the total dose irradiations. The final dose rate for this work
was 10mrad(Si)/s with a precision of ±5%.
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4.0. Tested Parameters
During the radiation lot acceptance testing the following electrical parameters were measured pre- and
post-irradiation:
1. Reference Voltage, VOUT1
2. Reference Voltage, VOUT2
3. Reference Voltage, VOUT3
4. Reference Voltage, VOUT4
5. Reference Voltage, VOUT5
6. Line Regulation, LineReg
7. Load Regulation, LoadReg
8. Adjust Pin Current, IADJ1
9. Adjust Pin Current, IADJ2
10. Adjust Pin Current, IADJ3
11. Adjust Pin Current, IADJ4
12. Adjust Pin Current, IADJ5
13. Adjust Pin Current, IADJ6
14. Adjust Pin Current Change, ΔIADJ1
15. Adjust Pin Current Change, ΔIADJ2
16. Adjust Pin Current Change, ΔIADJ3
17. Adjust Pin Current Change, ΔIADJ4
18. Minimum Load Current, ILOADMIN
19. Current Limit, ILIM1
20. Current Limit, ILIM2
21. Dropout Voltage, VDROPOUT
Appendix C details the measured parameters, test conditions, pre-irradiation specification and
measurement resolution for each of the measurements.
The parametric data was obtained as “read and record” and all the raw data plus an attributes summary
are contained in this report as well as in a separate Excel file. The attributes data contains the average,
standard deviation and the average with the KTL values applied. The KTL value used is 2.742 per MIL
HDBK 814 using one sided tolerance limits of 90/90 and a 5-piece sample size. This survival
probability/level of confidence is consistent with a 22-piece sample size and zero failures analyzed using
a lot tolerance percent defective (LTPD) approach. Note that the following criteria must be met for a
device to pass the low dose rate test: following the radiation exposure each of the 5 pieces irradiated
under electrical bias shall pass the specification value. The units irradiated without electrical bias and
the KTL statistics are included in this report for reference only. If any of the 5 pieces irradiated under
electrical bias exceed the datasheet specifications, then the lot could be logged as a failure.
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Further, MIL-STD-883G, TM 1019.7 Section 3.13.1.1 Characterization test to determine if a part
exhibits ELDRS” states the following: Select a minimum random sample of 21 devices from a
population representative of recent production runs. Smaller sample sizes may be used if agreed upon
between the parties to the test. All of the selected devices shall have undergone appropriate elevated
temperature reliability screens, e.g. burn-in and high temperature storage life. Divide the samples into
four groups of 5 each and use the remaining part for a control. Perform pre-irradiation electrical
characterization on all parts assuring that they meet the Group A electrical tests. Irradiate 5 samples
under a 0 volt bias and another 5 under the irradiation bias given in the acquisition specification at 50300 rad(Si)/s and room temperature. Irradiate 5 samples under a 0 volt bias and another 5 under
irradiation bias given in the acquisition specification at < 10mrad(Si)/s and room temperature. Irradiate
all samples to the same dose levels, including 0.5 and 1.0 times the anticipated specification dose, and
repeat the electrical characterization on each part at each dose level. Post irradiation electrical
measurements shall be performed per paragraph 3.10 where the low dose rate test is considered
Condition D. Calculate the radiation induced change in each electrical parameter (Δpara) for each
sample at each radiation level. Calculate the ratio of the median Δpara at low dose rate to the median
Δpara at high dose rate for each irradiation bias group at each total dose level. If this ratio exceeds 1.5
for any of the most sensitive parameters then the part is considered to be ELDRS susceptible. This test
does not apply to parameters which exhibit changes that are within experimental error or whose values
are below the pre-irradiation electrical specification limits at low dose rate at the specification dose.
Therefore, the data in this report can be analyzed along with the low dose rate report titled “Total
Ionizing Dose (TID) Testing of the RH1086MK Low Dropout Positive Adjustable Regulator for Linear
Technology” to demonstrate that these parts do not exhibit ELDRS as defined in the current test method.
5.0. ELDRS Test Results
Using the conditions stated above, the RH1086MK Low Dropout Positive Adjustable Regulator (from
the lot date code identified on the first page of this test report) passed the low dose rate test with only
minor degradation to the VOUT parameters. Note that the post-irradiation specification limits as defined
by Linear Technology for both the maximum and minimum VOUT1 levels are reduced with increasing
dose, keeping a somewhat constant maximum to minimum spread. For example, the maximum VOUT1
specification pre-irradiation is 1.262V and incrementally decreases to 1.241V at 200krad(Si). Therefore,
if a particular lot of RH1086 voltage regulators show little or no degradation to VOUT1 with total dose, it
is likely to “fail” by exceeding the maximum post-irradiation specification. The remaining VOUT
parameters (VOUT2-VOUT5) use a slightly increased post-radiation limit for the maximum voltage level,
thus avoiding the “fail” observed on VOUT1 if little or no degradation is observed. Note that the data for
the units-under-test irradiated in the unbiased condition and the KTL statistics presented in this report
are for reference only and are not used for the determination of “PASS/FAIL” for the lot.
Figures 5.1 through 5.21 show plots of all the measured parameters versus total ionizing dose while
Tables 5.1 – 5.21 show the corresponding raw data for each of these parameters. In these data plots the
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solid diamonds are the average of the measured data points for the sample irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the units irradiated with all
pins tied to ground. The black lines (solid or dashed) are the average of the data points after application
of the KTL statistics on the sample irradiated in the biased condition while the shaded lines (solid or
dashed) are the average of the data points after application of the KTL statistics on the sample irradiated
in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or
maximum specification value as defined in the datasheet and/or test plan.
In addition to the radiation test results, the data plots and tables described above contain anneal data.
The anneals are performed to better understand the underlying physical mechanisms responsible for
radiation-induced parametric shifts and are not part of the criteria used to establish whether or not the lot
passes or fails the low dose rate test. In all cases the parts either improved or exhibited no change
during the anneal.
As seen clearly in these figures, the pre- and post-irradiation data are well within the specification even
after application of the KTL statistics and the control units, as expected, show no significant changes to
any of the parameters throughout the course of the measurements. Therefore we can conclude that any
observed degradation was due to the radiation exposure and not drift in the test equipment.
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Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Reference Voltage 1 VDIFF=3V IL=10mA (V)
1.265
1.260
1.255
1.250
1.245
1.240
1.235
1.230
1.225
1.220
0
10
20
30
40
50
24-Hr
60
Anneal
Total Dose (krad(Si))
Figure 5.1. Plot of Reference Voltage 1 VDIFF=3V IL=10mA (V) versus total dose. The solid diamonds are
the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
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Table 5.1. Raw data for Reference Voltage 1 VDIFF=3V IL=10mA (V) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Reference Voltage 1
VDIFF=3V IL=10mA (V)
24-hr
Anneal
Total Dose (krad(Si))
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.251
1.255
1.249
1.251
1.256
1.248
1.255
1.253
1.254
1.248
1.256
1.249
10
1.248
1.253
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.256
1.248
20
1.247
1.252
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.255
1.249
30
1.246
1.251
1.245
1.246
1.252
1.246
1.253
1.250
1.252
1.247
1.256
1.248
50
1.243
1.250
1.243
1.243
1.251
1.243
1.251
1.248
1.251
1.244
1.255
1.247
60
1.244
1.250
1.244
1.244
1.251
1.245
1.252
1.249
1.252
1.246
1.256
1.249
168-hr
Anneal
70
1.244
1.250
1.244
1.244
1.251
1.245
1.252
1.249
1.252
1.246
1.255
1.248
Biased Statistics
Average Biased
1.252
1.250
1.250
1.248
1.246
1.247
1.247
Std Dev Biased
2.97E-03
3.24E-03
3.21E-03
3.24E-03
4.12E-03
3.58E-03
3.58E-03
Ps90%/90% (+KTL) Biased
1.261
1.259
1.258
1.257
1.257
1.256
1.256
Ps90%/90% (-KTL) Biased
1.244
1.241
1.241
1.239
1.235
1.237
1.237
Un-Biased Statistics
Average Un-Biased
1.252
1.250
1.250
1.250
1.247
1.249
1.249
Std Dev Un-Biased
3.36E-03
3.03E-03
3.03E-03
3.05E-03
3.78E-03
3.27E-03
3.27E-03
Ps90%/90% (+KTL) Un-Biased
1.261
1.259
1.259
1.258
1.258
1.258
1.258
Ps90%/90% (-KTL) Un-Biased
1.242
1.242
1.242
1.241
1.237
1.240
1.240
Specification MIN
1.238
1.234
1.230
1.230
1.225
1.225
1.225
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
1.262
1.258
1.257
1.257
1.253
1.253
1.253
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Reference Voltage 2 VDIFF=1.5V IL=10mA (V)
1.280
1.270
1.260
1.250
1.240
1.230
1.220
1.210
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.2. Plot of Reference Voltage 2 VDIFF=1.5V IL=10mA (V) versus total dose. The solid diamonds
are the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
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Table 5.2. Raw data for Reference Voltage 2 VDIFF=1.5V IL=10mA (V) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Reference Voltage 2
VDIFF=1.5V IL=10mA (V)
24-hr
Anneal
Total Dose (krad(Si))
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.250
1.255
1.249
1.251
1.256
1.248
1.255
1.253
1.254
1.248
1.256
1.248
10
1.248
1.253
1.247
1.248
1.254
1.246
1.253
1.251
1.253
1.247
1.255
1.248
20
1.248
1.253
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.256
1.248
30
1.246
1.251
1.245
1.246
1.252
1.246
1.252
1.250
1.252
1.246
1.255
1.248
50
1.243
1.249
1.243
1.243
1.250
1.243
1.250
1.247
1.251
1.244
1.255
1.247
60
1.244
1.250
1.244
1.244
1.251
1.245
1.252
1.248
1.252
1.246
1.256
1.249
168-hr
Anneal
70
1.244
1.250
1.244
1.244
1.251
1.245
1.252
1.249
1.252
1.246
1.255
1.248
Biased Statistics
Average Biased
1.252
1.250
1.250
1.248
1.246
1.247
1.247
Std Dev Biased
3.11E-03
3.24E-03
3.24E-03
3.24E-03
3.58E-03
3.58E-03
3.58E-03
Ps90%/90% (+KTL) Biased
1.261
1.259
1.259
1.257
1.255
1.256
1.256
Ps90%/90% (-KTL) Biased
1.244
1.241
1.241
1.239
1.236
1.237
1.237
Un-Biased Statistics
Average Un-Biased
1.252
1.250
1.250
1.249
1.247
1.249
1.249
Std Dev Un-Biased
3.36E-03
3.32E-03
3.03E-03
3.03E-03
3.54E-03
3.29E-03
3.27E-03
Ps90%/90% (+KTL) Un-Biased
1.261
1.259
1.259
1.258
1.257
1.258
1.258
Ps90%/90% (-KTL) Un-Biased
1.242
1.241
1.242
1.241
1.237
1.240
1.240
Specification MIN
1.225
1.220
1.219
1.215
1.215
1.215
1.215
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
1.270
1.275
1.275
1.275
1.275
1.275
1.275
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Reference Voltage 3 VDIFF=1.5V IL=1.5A (V)
1.280
1.270
1.260
1.250
1.240
1.230
1.220
1.210
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.3. Plot of Reference Voltage 3 VDIFF=1.5V IL=1.5A (V) versus total dose. The solid diamonds are
the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
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Table 5.3. Raw data for Reference Voltage 3 VDIFF=1.5V IL=1.5A (V) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Reference Voltage 3
VDIFF=1.5V IL=1.5A (V)
24-hr
Anneal
Total Dose (krad(Si))
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.251
1.255
1.248
1.250
1.257
1.247
1.255
1.253
1.254
1.247
1.255
1.248
10
1.248
1.252
1.246
1.248
1.253
1.246
1.253
1.251
1.252
1.246
1.255
1.248
20
1.247
1.252
1.246
1.247
1.253
1.246
1.252
1.250
1.253
1.246
1.254
1.248
30
1.246
1.250
1.244
1.245
1.251
1.245
1.252
1.249
1.252
1.246
1.255
1.248
50
1.243
1.248
1.241
1.242
1.250
1.243
1.250
1.247
1.249
1.243
1.254
1.246
60
1.244
1.249
1.243
1.243
1.251
1.243
1.251
1.247
1.251
1.245
1.255
1.247
168-hr
Anneal
70
1.244
1.247
1.243
1.243
1.250
1.243
1.251
1.249
1.251
1.245
1.255
1.248
Biased Statistics
Average Biased
1.252
1.249
1.249
1.247
1.245
1.246
1.245
Std Dev Biased
3.70E-03
2.97E-03
3.24E-03
3.11E-03
3.96E-03
3.74E-03
3.05E-03
Ps90%/90% (+KTL) Biased
1.262
1.258
1.258
1.256
1.256
1.256
1.254
Ps90%/90% (-KTL) Biased
1.242
1.241
1.240
1.239
1.234
1.236
1.237
Un-Biased Statistics
Average Un-Biased
1.251
1.250
1.249
1.249
1.246
1.247
1.248
Std Dev Un-Biased
3.90E-03
3.36E-03
3.29E-03
3.27E-03
3.29E-03
3.58E-03
3.63E-03
Ps90%/90% (+KTL) Un-Biased
1.262
1.259
1.258
1.258
1.255
1.257
1.258
Ps90%/90% (-KTL) Un-Biased
1.241
1.240
1.240
1.240
1.237
1.238
1.238
Specification MIN
1.225
1.220
1.219
1.215
1.215
1.215
1.215
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
1.270
1.275
1.275
1.275
1.275
1.275
1.275
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
13
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Reference Voltage 4 VDIFF=15V IL=10mA (V)
1.280
1.270
1.260
1.250
1.240
1.230
1.220
1.210
0
10
20
30
40
Total Dose (krad(Si))
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Figure 5.4. Plot of Reference Voltage 4 VDIFF=15V IL=10mA (V) versus total dose. The solid diamonds
are the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
14
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.4. Raw data for Reference Voltage 4 VDIFF=15V IL=10mA (V) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Reference Voltage 4
VDIFF=15V IL=10mA (V)
24-hr
Anneal
Total Dose (krad(Si))
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.250
1.255
1.249
1.251
1.256
1.249
1.255
1.253
1.255
1.248
1.256
1.248
10
1.248
1.253
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.256
1.247
20
1.248
1.252
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.255
1.248
30
1.245
1.251
1.245
1.246
1.252
1.246
1.253
1.250
1.252
1.246
1.255
1.248
50
1.244
1.250
1.243
1.244
1.251
1.243
1.251
1.247
1.251
1.245
1.255
1.247
60
1.244
1.250
1.244
1.244
1.251
1.245
1.252
1.249
1.252
1.246
1.256
1.249
168-hr
Anneal
70
1.244
1.250
1.244
1.244
1.251
1.245
1.252
1.250
1.252
1.246
1.255
1.248
Biased Statistics
Average Biased
1.252
1.250
1.250
1.248
1.246
1.247
1.247
Std Dev Biased
3.11E-03
3.24E-03
3.03E-03
3.42E-03
3.78E-03
3.58E-03
3.58E-03
Ps90%/90% (+KTL) Biased
1.261
1.259
1.258
1.257
1.257
1.256
1.256
Ps90%/90% (-KTL) Biased
1.244
1.241
1.241
1.238
1.236
1.237
1.237
Un-Biased Statistics
Average Un-Biased
1.252
1.250
1.250
1.249
1.247
1.249
1.249
Std Dev Un-Biased
3.32E-03
3.03E-03
3.03E-03
3.29E-03
3.58E-03
3.27E-03
3.32E-03
Ps90%/90% (+KTL) Un-Biased
1.261
1.259
1.259
1.258
1.257
1.258
1.258
Ps90%/90% (-KTL) Un-Biased
1.243
1.242
1.242
1.240
1.238
1.240
1.240
Specification MIN
1.225
1.220
1.219
1.215
1.215
1.215
1.215
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
1.270
1.275
1.275
1.275
1.275
1.275
1.275
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
15
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Reference Voltage 5 VDIFF=15V IL=500mA (V)
1.280
1.270
1.260
1.250
1.240
1.230
1.220
1.210
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.5. Plot of Reference Voltage 5 VDIFF=15V IL=500mA (V) versus total dose. The solid diamonds
are the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
16
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.5. Raw data for Reference Voltage 5 VDIFF=15V IL=500mA (V) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Reference Voltage 5
VDIFF=15V IL=500mA (V)
24-hr
Anneal
Total Dose (krad(Si))
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.250
1.255
1.249
1.250
1.256
1.249
1.255
1.253
1.254
1.248
1.256
1.249
10
1.247
1.253
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.255
1.248
20
1.248
1.252
1.247
1.248
1.254
1.247
1.253
1.251
1.253
1.247
1.256
1.247
30
1.246
1.251
1.246
1.246
1.252
1.246
1.253
1.250
1.252
1.246
1.255
1.248
50
1.243
1.250
1.244
1.243
1.250
1.243
1.250
1.247
1.251
1.244
1.255
1.248
60
1.244
1.250
1.244
1.244
1.251
1.244
1.252
1.248
1.252
1.245
1.256
1.249
168-hr
Anneal
70
1.245
1.250
1.244
1.244
1.251
1.246
1.252
1.249
1.253
1.246
1.255
1.248
Biased Statistics
Average Biased
1.252
1.250
1.250
1.248
1.246
1.247
1.247
Std Dev Biased
3.24E-03
3.42E-03
3.03E-03
3.03E-03
3.67E-03
3.58E-03
3.42E-03
Ps90%/90% (+KTL) Biased
1.261
1.259
1.258
1.257
1.256
1.256
1.256
Ps90%/90% (-KTL) Biased
1.243
1.240
1.241
1.240
1.236
1.237
1.237
Un-Biased Statistics
Average Un-Biased
1.252
1.250
1.250
1.249
1.247
1.248
1.249
Std Dev Un-Biased
3.11E-03
3.03E-03
3.03E-03
3.29E-03
3.54E-03
3.77E-03
3.27E-03
Ps90%/90% (+KTL) Un-Biased
1.260
1.259
1.259
1.258
1.257
1.259
1.258
Ps90%/90% (-KTL) Un-Biased
1.243
1.242
1.242
1.240
1.237
1.238
1.240
Specification MIN
1.225
1.220
1.219
1.215
1.215
1.215
1.215
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
1.270
1.275
1.275
1.275
1.275
1.275
1.275
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
17
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Line Regulation VDIFF=1.5-15V IL=10mA (%)
3.00E-01
2.00E-01
1.00E-01
0.00E+00
-1.00E-01
-2.00E-01
-3.00E-01
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.6. Plot of Line Regulation VDIFF=1.5-15V IL=10mA (%) versus total dose. The solid diamonds
are the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
18
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.6. Raw data for Line Regulation VDIFF=1.5-15V IL=10mA (%) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Line Regulation
VDIFF=1.5-15V IL=10mA (%)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Total Dose (krad(Si))
0
7.00E-03
0.00E+00
1.20E-02
3.00E-03
-8.00E-03
1.00E-03
-9.00E-03
5.00E-03
0.00E+00
3.00E-03
-1.10E-02
-1.60E-02
10
-1.80E-02
-7.00E-03
-1.20E-02
-1.20E-02
-1.10E-02
1.10E-02
-8.00E-03
-9.00E-03
-4.00E-03
-5.00E-03
1.00E-03
-1.30E-02
20
3.00E-03
-1.70E-02
-4.00E-03
-3.10E-02
-1.00E-03
-2.30E-02
8.00E-03
-1.10E-02
-1.70E-02
-1.10E-02
4.00E-03
4.00E-03
30
-2.00E-02
-1.50E-02
1.00E-03
-2.00E-02
-1.10E-02
-2.80E-02
-2.70E-02
-3.00E-03
-1.60E-02
-1.20E-02
-3.00E-03
-1.60E-02
50
-1.90E-02
-2.00E-02
-2.20E-02
-1.50E-02
-1.20E-02
-2.20E-02
-2.20E-02
-2.00E-02
-2.40E-02
-1.80E-02
-5.00E-03
-1.60E-02
24-hr
Anneal
168-hr
Anneal
60
-1.60E-02
-3.00E-03
-1.00E-03
-5.00E-03
-4.00E-03
-5.00E-02
-2.80E-02
-1.30E-02
-7.00E-03
-3.00E-03
0.00E+00
-9.00E-03
70
-1.20E-02
-8.00E-03
-2.40E-02
-3.20E-02
-2.00E-02
-2.30E-02
-2.20E-02
1.00E-03
1.10E-02
-1.90E-02
-9.00E-03
3.00E-03
Biased Statistics
Average Biased
2.80E-03 -1.20E-02 -1.00E-02 -1.30E-02 -1.76E-02 -5.80E-03 -1.92E-02
Std Dev Biased
7.53E-03
3.94E-03
1.39E-02
8.69E-03
4.04E-03
5.89E-03
9.55E-03
Ps90%/90% (+KTL) Biased
2.34E-02 -1.20E-03
2.82E-02
1.08E-02 -6.53E-03
1.04E-02
6.99E-03
Ps90%/90% (-KTL) Biased
-1.78E-02 -2.28E-02 -4.82E-02 -3.68E-02 -2.87E-02 -2.20E-02 -4.54E-02
Un-Biased Statistics
Average Un-Biased
0.00E+00 -3.00E-03 -1.08E-02 -1.72E-02 -2.12E-02 -2.02E-02 -1.04E-02
Std Dev Un-Biased
5.39E-03
8.09E-03
1.16E-02
1.05E-02
2.28E-03
1.92E-02
1.55E-02
Ps90%/90% (+KTL) Un-Biased
1.48E-02
1.92E-02
2.11E-02
1.16E-02 -1.49E-02
3.24E-02
3.20E-02
Ps90%/90% (-KTL) Un-Biased
-1.48E-02 -2.52E-02 -4.27E-02 -4.60E-02 -2.75E-02 -7.28E-02 -5.28E-02
Specification MIN
-2.00E-01 -2.00E-01 -2.10E-01 -2.30E-01 -2.30E-01 -2.30E-01 -2.30E-01
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
2.00E-01
2.00E-01
2.10E-01
2.30E-01
2.30E-01
2.30E-01
2.30E-01
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
19
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
Load Regulation VDIFF=3V IL=10mA-1.5A (%)
4.00E-01
3.00E-01
2.00E-01
1.00E-01
0.00E+00
-1.00E-01
-2.00E-01
-3.00E-01
-4.00E-01
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.7. Plot of Load Regulation VDIFF=3V IL=10mA-1.5A (%) versus total dose. The solid diamonds
are the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
20
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.7. Raw data for Load Regulation VDIFF=3V IL=10mA-1.5A (%) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Load Regulation
VDIFF=3V IL=10mA-1.5A (%)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
Total Dose (krad(Si))
24-hr
Anneal
168-hr
Anneal
0
2.20E-02
1.03E-01
2.40E-02
7.00E-03
2.10E-02
4.30E-02
5.10E-02
3.10E-02
9.40E-02
1.00E-03
9.80E-02
5.40E-02
10
3.60E-02
5.10E-02
4.30E-02
2.20E-02
1.20E-02
5.40E-02
4.30E-02
4.20E-02
2.30E-02
1.16E-01
5.80E-02
9.00E-03
20
1.20E-02
5.50E-02
5.30E-02
5.80E-02
3.60E-02
2.80E-02
6.40E-02
3.00E-02
4.70E-02
6.90E-02
8.30E-02
4.70E-02
30
7.00E-02
1.39E-01
2.80E-02
5.10E-02
4.80E-02
1.11E-01
9.80E-02
8.90E-02
3.10E-02
2.30E-02
5.50E-02
5.30E-02
50
5.80E-02
5.90E-02
5.50E-02
6.20E-02
2.60E-02
5.50E-02
6.10E-02
6.90E-02
6.10E-02
1.18E-01
5.50E-02
1.01E-01
60
3.90E-02
3.50E-02
3.70E-02
1.08E-01
4.70E-02
1.80E-02
4.70E-02
5.90E-02
8.50E-02
1.90E-02
3.60E-02
4.70E-02
70
9.60E-02
6.30E-02
6.50E-02
6.00E-02
3.80E-02
4.30E-02
5.00E-02
1.20E-02
6.60E-02
3.20E-02
3.60E-02
4.90E-02
3.54E-02
3.84E-02
1.41E-01
-6.98E-02
3.28E-02
1.58E-02
7.60E-02
-1.04E-02
4.28E-02
1.92E-02
9.55E-02
-9.92E-03
6.72E-02
4.28E-02
1.85E-01
-5.02E-02
5.20E-02
1.47E-02
9.24E-02
1.16E-02
5.32E-02
3.10E-02
1.38E-01
-3.17E-02
6.44E-02
2.07E-02
1.21E-01
7.59E-03
4.40E-02
5.56E-02
4.76E-02
7.04E-02
7.28E-02
4.56E-02
4.06E-02
3.38E-02
3.56E-02
1.88E-02
4.05E-02
2.58E-02
2.83E-02
2.02E-02
1.37E-01
1.53E-01
9.93E-02
1.81E-01
1.43E-01
1.23E-01
9.60E-02
-4.87E-02 -4.19E-02 -4.09E-03 -4.06E-02
2.19E-03 -3.20E-02 -1.48E-02
-3.00E-01 -3.00E-01 -3.00E-01 -3.00E-01 -3.00E-01 -3.00E-01 -3.00E-01
PASS
PASS
PASS
PASS
PASS
PASS
PASS
3.00E-01
3.00E-01
3.00E-01
3.00E-01
3.00E-01
3.00E-01
3.00E-01
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
21
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Adj. Pin Current1 VDIFF=1.5V IL=10mA (A)
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.8. Plot of Adj. Pin Current1 VDIFF=1.5V IL=10mA (A) versus total dose. The solid diamonds are
the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
22
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.8. Raw data for Adj. Pin Current1 VDIFF=1.5V IL=10mA (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Adj. Pin Current1 VDIFF=1.5V IL=10mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
3.38E-05
3.27E-05
3.37E-05
3.44E-05
3.21E-05
3.39E-05
3.31E-05
3.57E-05
3.23E-05
3.17E-05
3.21E-05
3.33E-05
10
3.35E-05
3.28E-05
3.36E-05
3.46E-05
3.20E-05
3.39E-05
3.31E-05
3.54E-05
3.19E-05
3.17E-05
3.25E-05
3.37E-05
20
3.34E-05
3.28E-05
3.36E-05
3.41E-05
3.17E-05
3.35E-05
3.24E-05
3.48E-05
3.15E-05
3.15E-05
3.23E-05
3.32E-05
30
3.30E-05
3.15E-05
3.31E-05
3.33E-05
3.10E-05
3.32E-05
3.17E-05
3.43E-05
3.07E-05
3.07E-05
3.17E-05
3.31E-05
50
3.27E-05
3.10E-05
3.28E-05
3.31E-05
3.08E-05
3.28E-05
3.17E-05
3.40E-05
3.06E-05
3.07E-05
3.13E-05
3.31E-05
60
3.33E-05
3.24E-05
3.32E-05
3.34E-05
3.15E-05
3.31E-05
3.22E-05
3.43E-05
3.09E-05
3.11E-05
3.17E-05
3.31E-05
70
3.31E-05
3.19E-05
3.31E-05
3.36E-05
3.14E-05
3.32E-05
3.22E-05
3.47E-05
3.11E-05
3.10E-05
3.18E-05
3.31E-05
3.33E-05
9.24E-07
3.58E-05
3.08E-05
3.33E-05
9.72E-07
3.60E-05
3.06E-05
3.31E-05
9.30E-07
3.57E-05
3.06E-05
3.24E-05
1.04E-06
3.52E-05
2.95E-05
3.21E-05
1.10E-06
3.51E-05
2.91E-05
3.27E-05
8.14E-07
3.50E-05
3.05E-05
3.26E-05
9.27E-07
3.52E-05
3.01E-05
3.33E-05
3.32E-05
3.27E-05
3.21E-05
3.20E-05
3.23E-05
3.24E-05
1.55E-06
1.54E-06
1.42E-06
1.60E-06
1.44E-06
1.41E-06
1.56E-06
3.76E-05
3.74E-05
3.66E-05
3.65E-05
3.59E-05
3.62E-05
3.67E-05
2.91E-05
2.90E-05
2.88E-05
2.77E-05
2.80E-05
2.84E-05
2.82E-05
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
23
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Adj. Pin Current2 VDIFF=3V IL=10mA (A)
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.9. Plot of Adj. Pin Current2 VDIFF=3V IL=10mA (A) versus total dose. The solid diamonds are the
average of the measured data points for the samples irradiated under electrical bias while the shaded diamonds
are the average of the measured data points for the samples irradiated with all pins tied to ground. The black
lines (solid and/or dashed) are the average of the data points after application of the KTL statistics on the
samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the data
points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
24
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.9. Raw data for Adj. Pin Current2 VDIFF=3V IL=10mA (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Adj. Pin Current2 VDIFF=3V IL=10mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
3.38E-05
3.28E-05
3.36E-05
3.43E-05
3.20E-05
3.37E-05
3.31E-05
3.55E-05
3.20E-05
3.17E-05
3.21E-05
3.32E-05
10
3.34E-05
3.27E-05
3.35E-05
3.46E-05
3.18E-05
3.38E-05
3.31E-05
3.53E-05
3.18E-05
3.16E-05
3.30E-05
3.37E-05
20
3.34E-05
3.26E-05
3.36E-05
3.40E-05
3.18E-05
3.35E-05
3.24E-05
3.48E-05
3.12E-05
3.15E-05
3.19E-05
3.32E-05
30
3.28E-05
3.13E-05
3.31E-05
3.33E-05
3.11E-05
3.31E-05
3.16E-05
3.44E-05
3.08E-05
3.07E-05
3.17E-05
3.30E-05
50
3.27E-05
3.11E-05
3.26E-05
3.31E-05
3.07E-05
3.31E-05
3.15E-05
3.41E-05
3.05E-05
3.07E-05
3.13E-05
3.28E-05
60
3.33E-05
3.22E-05
3.35E-05
3.36E-05
3.13E-05
3.31E-05
3.21E-05
3.45E-05
3.09E-05
3.09E-05
3.18E-05
3.31E-05
70
3.31E-05
3.18E-05
3.32E-05
3.37E-05
3.15E-05
3.33E-05
3.21E-05
3.48E-05
3.11E-05
3.09E-05
3.19E-05
3.31E-05
3.33E-05
8.85E-07
3.57E-05
3.09E-05
3.32E-05
1.03E-06
3.60E-05
3.04E-05
3.31E-05
8.76E-07
3.55E-05
3.07E-05
3.23E-05
1.04E-06
3.52E-05
2.95E-05
3.20E-05
1.06E-06
3.49E-05
2.91E-05
3.28E-05
9.91E-07
3.55E-05
3.01E-05
3.26E-05
9.71E-07
3.53E-05
3.00E-05
3.32E-05
3.31E-05
3.27E-05
3.21E-05
3.20E-05
3.23E-05
3.24E-05
1.53E-06
1.51E-06
1.48E-06
1.59E-06
1.56E-06
1.53E-06
1.61E-06
3.74E-05
3.73E-05
3.68E-05
3.65E-05
3.62E-05
3.65E-05
3.69E-05
2.90E-05
2.90E-05
2.86E-05
2.77E-05
2.77E-05
2.81E-05
2.80E-05
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
25
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Adj. Pin Current3 VDIFF=15V IL=10mA (A)
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.10. Plot of Adj. Pin Current3 VDIFF=15V IL=10mA (A) versus total dose. The solid diamonds are
the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
26
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.10. Raw data for Adj. Pin Current3 VDIFF=15V IL=10mA (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Adj. Pin Current3 VDIFF=15V IL=10mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
3.33E-05
3.30E-05
3.32E-05
3.39E-05
3.17E-05
3.35E-05
3.31E-05
3.53E-05
3.17E-05
3.14E-05
3.17E-05
3.32E-05
10
3.32E-05
3.21E-05
3.32E-05
3.40E-05
3.17E-05
3.36E-05
3.30E-05
3.51E-05
3.17E-05
3.14E-05
3.22E-05
3.33E-05
20
3.34E-05
3.22E-05
3.33E-05
3.37E-05
3.15E-05
3.32E-05
3.19E-05
3.46E-05
3.10E-05
3.11E-05
3.20E-05
3.31E-05
30
3.28E-05
3.12E-05
3.30E-05
3.31E-05
3.08E-05
3.31E-05
3.15E-05
3.40E-05
3.05E-05
3.03E-05
3.14E-05
3.25E-05
50
3.22E-05
3.09E-05
3.24E-05
3.31E-05
3.05E-05
3.24E-05
3.14E-05
3.39E-05
3.04E-05
3.04E-05
3.10E-05
3.23E-05
60
3.31E-05
3.18E-05
3.31E-05
3.32E-05
3.11E-05
3.31E-05
3.19E-05
3.42E-05
3.08E-05
3.08E-05
3.16E-05
3.30E-05
70
3.31E-05
3.15E-05
3.31E-05
3.33E-05
3.09E-05
3.31E-05
3.19E-05
3.46E-05
3.09E-05
3.09E-05
3.15E-05
3.31E-05
3.30E-05
8.32E-07
3.53E-05
3.07E-05
3.28E-05
9.38E-07
3.54E-05
3.03E-05
3.28E-05
9.17E-07
3.53E-05
3.03E-05
3.22E-05
1.08E-06
3.51E-05
2.92E-05
3.18E-05
1.10E-06
3.48E-05
2.88E-05
3.25E-05
9.61E-07
3.51E-05
2.98E-05
3.24E-05
1.10E-06
3.54E-05
2.94E-05
3.30E-05
3.30E-05
3.24E-05
3.19E-05
3.17E-05
3.22E-05
3.23E-05
1.56E-06
1.49E-06
1.53E-06
1.64E-06
1.49E-06
1.48E-06
1.57E-06
3.73E-05
3.70E-05
3.66E-05
3.64E-05
3.58E-05
3.62E-05
3.66E-05
2.87E-05
2.89E-05
2.82E-05
2.74E-05
2.76E-05
2.81E-05
2.79E-05
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
27
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Adj. Pin Current4 VDIFF=1.5V IL=1.5A (A)
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.11. Plot of Adj. Pin Current4 VDIFF=1.5V IL=1.5A (A) versus total dose. The solid diamonds are
the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
28
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.11. Raw data for Adj. Pin Current4 VDIFF=1.5V IL=1.5A (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Adj. Pin Current4 VDIFF=1.5V IL=1.5A (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
3.35E-05
3.31E-05
3.35E-05
3.46E-05
3.20E-05
3.35E-05
3.31E-05
3.53E-05
3.31E-05
3.16E-05
3.20E-05
3.31E-05
10
3.38E-05
3.31E-05
3.38E-05
3.39E-05
3.18E-05
3.38E-05
3.31E-05
3.53E-05
3.16E-05
3.18E-05
3.31E-05
3.35E-05
20
3.35E-05
3.20E-05
3.33E-05
3.38E-05
3.14E-05
3.33E-05
3.20E-05
3.46E-05
3.13E-05
3.13E-05
3.18E-05
3.33E-05
30
3.31E-05
3.17E-05
3.31E-05
3.32E-05
3.10E-05
3.33E-05
3.17E-05
3.46E-05
3.11E-05
3.03E-05
3.17E-05
3.24E-05
50
3.24E-05
3.12E-05
3.22E-05
3.31E-05
3.06E-05
3.31E-05
3.14E-05
3.38E-05
3.02E-05
3.06E-05
3.11E-05
3.24E-05
60
3.31E-05
3.20E-05
3.31E-05
3.42E-05
3.16E-05
3.31E-05
3.17E-05
3.46E-05
3.11E-05
3.09E-05
3.18E-05
3.31E-05
70
3.31E-05
3.17E-05
3.31E-05
3.38E-05
3.13E-05
3.31E-05
3.20E-05
3.46E-05
3.11E-05
3.09E-05
3.17E-05
3.31E-05
3.33E-05
9.11E-07
3.58E-05
3.08E-05
3.33E-05
8.86E-07
3.57E-05
3.09E-05
3.28E-05
1.05E-06
3.57E-05
2.99E-05
3.24E-05
1.01E-06
3.52E-05
2.96E-05
3.19E-05
1.01E-06
3.46E-05
2.91E-05
3.28E-05
1.01E-06
3.56E-05
3.00E-05
3.26E-05
1.08E-06
3.55E-05
2.96E-05
3.33E-05
3.31E-05
3.25E-05
3.22E-05
3.18E-05
3.23E-05
3.23E-05
1.30E-06
1.50E-06
1.42E-06
1.72E-06
1.59E-06
1.53E-06
1.51E-06
3.69E-05
3.72E-05
3.64E-05
3.69E-05
3.62E-05
3.65E-05
3.65E-05
2.98E-05
2.90E-05
2.86E-05
2.75E-05
2.75E-05
2.81E-05
2.82E-05
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
29
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Adj. Pin Current5 VDIFF=3V IL=1.5A (A)
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0
10
20
30
40
Total Dose (krad(Si))
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Figure 5.12. Plot of Adj. Pin Current5 VDIFF=3V IL=1.5A (A) versus total dose. The solid diamonds are the
average of the measured data points for the samples irradiated under electrical bias while the shaded diamonds
are the average of the measured data points for the samples irradiated with all pins tied to ground. The black
lines (solid and/or dashed) are the average of the data points after application of the KTL statistics on the
samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the data
points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
30
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.12. Raw data for Adj. Pin Current5 VDIFF=3V IL=1.5A (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Adj. Pin Current5 VDIFF=3V IL=1.5A (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
3.35E-05
3.24E-05
3.38E-05
3.46E-05
3.16E-05
3.46E-05
3.31E-05
3.56E-05
3.20E-05
3.16E-05
3.16E-05
3.32E-05
10
3.31E-05
3.24E-05
3.38E-05
3.46E-05
3.16E-05
3.39E-05
3.31E-05
3.47E-05
3.16E-05
3.16E-05
3.24E-05
3.38E-05
20
3.31E-05
3.31E-05
3.36E-05
3.38E-05
3.17E-05
3.31E-05
3.31E-05
3.47E-05
3.17E-05
3.13E-05
3.24E-05
3.32E-05
30
3.31E-05
3.13E-05
3.31E-05
3.31E-05
3.09E-05
3.31E-05
3.17E-05
3.42E-05
3.09E-05
3.06E-05
3.17E-05
3.31E-05
50
3.24E-05
3.09E-05
3.31E-05
3.31E-05
3.06E-05
3.31E-05
3.18E-05
3.42E-05
3.09E-05
3.06E-05
3.17E-05
3.31E-05
60
3.33E-05
3.31E-05
3.31E-05
3.33E-05
3.16E-05
3.31E-05
3.18E-05
3.46E-05
3.06E-05
3.09E-05
3.16E-05
3.31E-05
70
3.31E-05
3.17E-05
3.31E-05
3.38E-05
3.13E-05
3.31E-05
3.24E-05
3.46E-05
3.10E-05
3.09E-05
3.31E-05
3.31E-05
3.32E-05
1.16E-06
3.64E-05
3.00E-05
3.31E-05
1.15E-06
3.62E-05
3.00E-05
3.30E-05
8.40E-07
3.54E-05
3.07E-05
3.23E-05
1.10E-06
3.53E-05
2.93E-05
3.20E-05
1.20E-06
3.53E-05
2.87E-05
3.29E-05
6.96E-07
3.48E-05
3.10E-05
3.26E-05
1.06E-06
3.55E-05
2.97E-05
3.34E-05
3.30E-05
3.28E-05
3.21E-05
3.21E-05
3.22E-05
3.24E-05
1.69E-06
1.37E-06
1.37E-06
1.53E-06
1.52E-06
1.64E-06
1.52E-06
3.80E-05
3.68E-05
3.65E-05
3.63E-05
3.63E-05
3.67E-05
3.66E-05
2.88E-05
2.93E-05
2.90E-05
2.79E-05
2.80E-05
2.77E-05
2.82E-05
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
31
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Adj. Pin Current6 VDIFF=15V IL=500mA (A)
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.13. Plot of Adj. Pin Current6 VDIFF=15V IL=500mA (A) versus total dose. The solid diamonds are
the average of the measured data points for the samples irradiated under electrical bias while the shaded
diamonds are the average of the measured data points for the samples irradiated with all pins tied to ground.
The black lines (solid and/or dashed) are the average of the data points after application of the KTL statistics
on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
32
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.13. Raw data for Adj. Pin Current6 VDIFF=15V IL=500mA (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Adj. Pin Current6 VDIFF=15V IL=500mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
3.35E-05
3.31E-05
3.38E-05
3.46E-05
3.24E-05
3.35E-05
3.31E-05
3.53E-05
3.24E-05
3.09E-05
3.16E-05
3.31E-05
10
3.35E-05
3.18E-05
3.31E-05
3.46E-05
3.13E-05
3.35E-05
3.24E-05
3.53E-05
3.18E-05
3.16E-05
3.17E-05
3.35E-05
20
3.32E-05
3.31E-05
3.31E-05
3.38E-05
3.20E-05
3.31E-05
3.20E-05
3.53E-05
3.11E-05
3.09E-05
3.18E-05
3.31E-05
30
3.31E-05
3.12E-05
3.31E-05
3.31E-05
3.09E-05
3.31E-05
3.17E-05
3.38E-05
3.05E-05
3.02E-05
3.17E-05
3.31E-05
50
3.24E-05
3.09E-05
3.22E-05
3.31E-05
3.09E-05
3.31E-05
3.17E-05
3.38E-05
3.03E-05
3.04E-05
3.09E-05
3.24E-05
60
3.35E-05
3.16E-05
3.33E-05
3.35E-05
3.09E-05
3.31E-05
3.16E-05
3.40E-05
3.09E-05
3.09E-05
3.16E-05
3.31E-05
70
3.33E-05
3.17E-05
3.31E-05
3.38E-05
3.10E-05
3.31E-05
3.17E-05
3.40E-05
3.06E-05
3.09E-05
3.11E-05
3.31E-05
3.35E-05
8.12E-07
3.57E-05
3.12E-05
3.29E-05
1.34E-06
3.65E-05
2.92E-05
3.30E-05
6.53E-07
3.48E-05
3.13E-05
3.23E-05
1.12E-06
3.54E-05
2.92E-05
3.19E-05
9.57E-07
3.45E-05
2.93E-05
3.26E-05
1.19E-06
3.58E-05
2.93E-05
3.26E-05
1.19E-06
3.58E-05
2.93E-05
3.30E-05
3.29E-05
3.25E-05
3.19E-05
3.19E-05
3.21E-05
3.20E-05
1.59E-06
1.50E-06
1.79E-06
1.59E-06
1.59E-06
1.38E-06
1.47E-06
3.74E-05
3.70E-05
3.74E-05
3.62E-05
3.62E-05
3.59E-05
3.61E-05
2.87E-05
2.88E-05
2.76E-05
2.75E-05
2.75E-05
2.83E-05
2.80E-05
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
1.20E-04
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
33
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
Adj. Pin Current Change vs. Line1 VDIFF=1.5-15V
IL=10mA (A)
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
6.00E-06
4.00E-06
2.00E-06
0.00E+00
-2.00E-06
-4.00E-06
-6.00E-06
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.14. Plot of Adj. Pin Current Change vs. Line1 VDIFF=1.5-15V IL=10mA (A) versus total dose.
The solid diamonds are the average of the measured data points for the samples irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the samples irradiated with all pins
tied to ground. The black lines (solid and/or dashed) are the average of the data points after application of the
KTL statistics on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the
average of the data points after application of the KTL statistics on the samples irradiated in the unbiased
condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification
value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
34
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.14. Raw data for Adj. Pin Current Change vs. Line1 VDIFF=1.5-15V IL=10mA (A)
versus total dose, including the statistical analysis, specification and the status of the testing
(pass/fail).
Adj. Pin Current Change vs. Line1
VDIFF=1.5-15V IL=10mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
Total Dose (krad(Si))
24-hr
Anneal
168-hr
Anneal
0
2.54E-07
5.08E-07
4.90E-07
3.99E-07
2.54E-07
3.63E-07
0.00E+00
2.18E-07
2.18E-07
4.17E-07
4.17E-07
3.60E-08
10
3.45E-07
5.81E-07
3.81E-07
5.08E-07
2.00E-07
2.72E-07
0.00E+00
2.18E-07
1.81E-07
3.81E-07
5.63E-07
2.90E-07
20
2.00E-07
5.45E-07
9.10E-08
3.27E-07
1.82E-07
3.99E-07
4.72E-07
1.82E-07
2.00E-07
4.90E-07
3.99E-07
2.00E-07
30
7.08E-07
2.90E-07
6.72E-07
1.09E-07
3.27E-07
0.00E+00
3.09E-07
2.54E-07
2.90E-07
3.27E-07
2.54E-07
7.08E-07
50
6.53E-07
1.45E-07
5.08E-07
1.80E-08
1.63E-07
5.08E-07
2.54E-07
2.36E-07
2.18E-07
3.45E-07
4.90E-07
4.72E-07
60
9.10E-08
4.54E-07
9.10E-08
3.63E-07
5.08E-07
9.10E-08
3.45E-07
2.90E-07
4.90E-07
3.09E-07
1.09E-07
0.00E+00
70
0.00E+00
5.44E-07
0.00E+00
4.72E-07
2.18E-07
2.00E-07
3.27E-07
2.72E-07
2.54E-07
1.09E-07
2.90E-07
4.36E-07
3.81E-07
1.23E-07
7.18E-07
4.35E-08
4.03E-07
1.48E-07
8.09E-07
-3.16E-09
2.69E-07
1.76E-07
7.51E-07
-2.13E-07
4.21E-07
2.59E-07
1.13E-06
-2.89E-07
2.97E-07
2.69E-07
1.04E-06
-4.41E-07
3.01E-07
1.99E-07
8.47E-07
-2.44E-07
2.47E-07
2.56E-07
9.48E-07
-4.55E-07
2.43E-07
2.10E-07
3.49E-07
2.36E-07
3.12E-07
3.05E-07
2.32E-07
1.62E-07
1.40E-07
1.48E-07
1.35E-07
1.20E-07
1.43E-07
8.26E-08
6.87E-07
5.94E-07
7.54E-07
6.05E-07
6.41E-07
6.97E-07
4.59E-07
-2.01E-07 -1.73E-07 -5.72E-08 -1.33E-07 -1.65E-08 -8.73E-08
6.03E-09
-5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
35
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
Adj. Pin Current Change vs. Line2 VDIFF=1.5-15V
IL=500mA (A)
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
6.00E-06
4.00E-06
2.00E-06
0.00E+00
-2.00E-06
-4.00E-06
-6.00E-06
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.15. Plot of Adj. Pin Current Change vs. Line2 VDIFF=1.5-15V IL=500mA (A) versus total dose.
The solid diamonds are the average of the measured data points for the samples irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the samples irradiated with all pins
tied to ground. The black lines (solid and/or dashed) are the average of the data points after application of the
KTL statistics on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the
average of the data points after application of the KTL statistics on the samples irradiated in the unbiased
condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification
value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
36
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.15. Raw data for Adj. Pin Current Change vs. Line2 VDIFF=1.5-15V IL=500mA
(A) versus total dose, including the statistical analysis, specification and the status of the
testing (pass/fail).
Adj. Pin Current Change vs. Line2
VDIFF=1.5-15V IL=500mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
Total Dose (krad(Si))
24-hr
Anneal
168-hr
Anneal
0
9.10E-08
3.63E-07
9.10E-08
7.26E-07
1.81E-07
0.00E+00
0.00E+00
2.72E-07
-9.10E-08
5.44E-07
3.63E-07
3.63E-07
10
1.81E-07
9.10E-08
0.00E+00
0.00E+00
0.00E+00
-3.63E-07
0.00E+00
0.00E+00
0.00E+00
3.63E-07
1.09E-06
9.10E-08
20
0.00E+00
5.45E-07
3.63E-07
0.00E+00
0.00E+00
5.45E-07
3.63E-07
3.63E-07
3.63E-07
5.45E-07
3.63E-07
1.82E-07
30
0.00E+00
0.00E+00
0.00E+00
1.82E-07
1.82E-07
0.00E+00
0.00E+00
5.45E-07
4.54E-07
7.26E-07
3.63E-07
1.09E-06
50
7.26E-07
0.00E+00
1.09E-06
0.00E+00
-1.82E-07
7.26E-07
3.63E-07
0.00E+00
7.26E-07
7.26E-07
0.00E+00
7.26E-07
60
9.10E-08
3.63E-07
1.81E-07
9.10E-08
3.63E-07
0.00E+00
2.72E-07
0.00E+00
1.81E-07
7.26E-07
1.81E-07
0.00E+00
70
0.00E+00
0.00E+00
2.72E-07
1.81E-07
2.72E-07
0.00E+00
0.00E+00
2.72E-07
1.81E-07
3.63E-07
0.00E+00
0.00E+00
2.90E-07
2.68E-07
1.02E-06
-4.43E-07
5.44E-08
8.10E-08
2.77E-07
-1.68E-07
1.82E-07
2.57E-07
8.86E-07
-5.23E-07
7.28E-08
9.97E-08
3.46E-07
-2.01E-07
3.27E-07
5.51E-07
1.84E-06
-1.18E-06
2.18E-07
1.38E-07
5.95E-07
-1.59E-07
1.45E-07
1.37E-07
5.22E-07
-2.32E-07
1.45E-07 0.00E+00
4.36E-07
3.45E-07
5.08E-07
2.36E-07
1.63E-07
2.61E-07
2.57E-07
9.97E-08
3.30E-07
3.25E-07
2.98E-07
1.62E-07
8.61E-07
7.04E-07
7.09E-07
1.25E-06
1.40E-06
1.05E-06
6.08E-07
-5.71E-07 -7.04E-07
1.62E-07 -5.59E-07 -3.82E-07 -5.82E-07 -2.82E-07
-5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
37
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
Adj. Pin Current Change vs. Load1 VDIFF=1.5V IL=10mA1.5A (A)
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
6.00E-06
4.00E-06
2.00E-06
0.00E+00
-2.00E-06
-4.00E-06
-6.00E-06
0
10
20
30
40
Total Dose (krad(Si))
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Figure 5.16. Plot of Adj. Pin Current Change vs. Load1 VDIFF=1.5V IL=10mA-1.5A (A) versus total dose.
The solid diamonds are the average of the measured data points for the samples irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the samples irradiated with all pins
tied to ground. The black lines (solid and/or dashed) are the average of the data points after application of the
KTL statistics on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the
average of the data points after application of the KTL statistics on the samples irradiated in the unbiased
condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification
value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
38
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.16. Raw data for Adj. Pin Current Change vs. Load1 VDIFF=1.5V IL=10mA-1.5A
(A) versus total dose, including the statistical analysis, specification and the status of the
testing (pass/fail).
Adj. Pin Current Change vs. Load1
VDIFF=1.5V IL=10mA-1.5A (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
Total Dose (krad(Si))
24-hr
Anneal
168-hr
Anneal
0
-9.10E-08
0.00E+00
-5.40E-08
5.81E-07
1.80E-08
9.10E-08
0.00E+00
-4.90E-07
2.36E-07
9.10E-08
5.44E-07
1.63E-07
10
5.08E-07
-3.63E-07
1.81E-07
-1.45E-07
2.18E-07
7.30E-08
3.60E-08
1.80E-08
1.27E-07
1.45E-07
1.45E-07
1.45E-07
20
-7.30E-08
-4.36E-07
-6.35E-07
2.54E-07
4.17E-07
3.45E-07
2.18E-07
9.10E-08
1.82E-07
6.53E-07
4.54E-07
1.09E-07
30
-2.90E-07
-7.30E-08
1.80E-08
7.30E-08
9.10E-08
7.30E-08
5.40E-08
-2.00E-07
-1.09E-07
-8.71E-07
-1.80E-08
-1.45E-07
50
-4.36E-07
-9.10E-08
7.30E-08
0.00E+00
-7.30E-08
7.26E-07
0.00E+00
1.82E-07
1.80E-08
1.09E-07
5.40E-08
0.00E+00
60
2.36E-07
-9.80E-07
1.45E-07
3.27E-07
1.09E-07
3.60E-08
1.80E-08
1.81E-07
5.26E-07
0.00E+00
1.45E-07
-1.81E-07
70
0.00E+00
3.60E-08
1.80E-08
-1.45E-07
-3.60E-08
9.10E-08
2.90E-07
2.18E-07
1.63E-07
-5.99E-07
-3.60E-08
0.00E+00
9.08E-08
2.77E-07
8.51E-07
-6.70E-07
7.98E-08
3.39E-07
1.01E-06
-8.49E-07
-9.46E-08
4.45E-07
1.13E-06
-1.31E-06
-3.62E-08
1.56E-07
3.90E-07
-4.63E-07
-1.05E-07
1.96E-07
4.32E-07
-6.43E-07
-3.26E-08
5.36E-07
1.44E-06
-1.50E-06
-2.54E-08
7.20E-08
1.72E-07
-2.23E-07
-1.44E-08
7.98E-08
2.98E-07 -2.11E-07
2.07E-07
1.52E-07
3.26E-08
2.79E-07
5.54E-08
2.18E-07
3.86E-07
2.99E-07
2.21E-07
3.61E-07
7.51E-07
2.32E-07
8.97E-07
8.49E-07
1.03E-06
7.58E-07
1.02E-06
-7.79E-07 -7.20E-08 -3.01E-07 -1.27E-06 -6.13E-07 -4.54E-07 -9.56E-07
-5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
39
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
Adj. Pin Current Change vs. Load2 VDIFF=15V IL=10500mA (A)
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
6.00E-06
4.00E-06
2.00E-06
0.00E+00
-2.00E-06
-4.00E-06
-6.00E-06
0
10
20
30
40
Total Dose (krad(Si))
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Figure 5.17. Plot of Adj. Pin Current Change vs. Load2 VDIFF=15V IL=10-500mA (A) versus total dose.
The solid diamonds are the average of the measured data points for the samples irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the samples irradiated with all pins
tied to ground. The black lines (solid and/or dashed) are the average of the data points after application of the
KTL statistics on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the
average of the data points after application of the KTL statistics on the samples irradiated in the unbiased
condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification
value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
40
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.17. Raw data for Adj. Pin Current Change vs. Load2 VDIFF=15V IL=10-500mA
(A) versus total dose, including the statistical analysis, specification and the status of the
testing (pass/fail).
Adj. Pin Current Change vs. Load2
VDIFF=15V IL=10-500mA (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
Total Dose (krad(Si))
24-hr
Anneal
168-hr
Anneal
0
2.72E-07
9.10E-08
1.09E-07
-6.35E-07
-1.80E-08
1.45E-07
7.30E-08
7.30E-08
0.00E+00
-3.09E-07
-5.40E-08
3.60E-08
10
-2.54E-07
3.45E-07
1.09E-07
-1.81E-07
0.00E+00
3.63E-07
-1.45E-07
-1.45E-07
-1.80E-08
-5.44E-07
-9.10E-08
1.27E-07
20
9.10E-08
7.30E-08
-5.40E-08
-3.60E-08
-9.10E-08
1.80E-08
2.54E-07
4.17E-07
-1.63E-07
9.10E-08
-3.60E-08
0.00E+00
30
7.30E-08
-1.45E-07
-3.27E-07
1.80E-08
-4.36E-07
0.00E+00
-7.30E-08
-2.72E-07
-3.63E-07
1.80E-08
-4.54E-07
2.18E-07
50
-1.82E-07
-7.30E-08
-4.72E-07
0.00E+00
7.30E-08
2.90E-07
-4.72E-07
0.00E+00
1.09E-07
-5.40E-08
1.82E-07
3.09E-07
60
-3.45E-07
1.45E-07
1.80E-08
-3.60E-08
7.30E-08
0.00E+00
5.40E-08
1.80E-08
-1.27E-07
3.27E-07
-1.27E-07
0.00E+00
70
-1.09E-07
3.60E-08
0.00E+00
1.80E-08
2.36E-07
0.00E+00
1.09E-07
1.63E-07
-3.60E-08
3.60E-08
-1.09E-07
0.00E+00
-3.62E-08
3.50E-07
9.25E-07
-9.97E-07
3.80E-09
2.39E-07
6.59E-07
-6.51E-07
-3.40E-09
8.07E-08
2.18E-07
-2.25E-07
-1.63E-07
2.18E-07
4.35E-07
-7.61E-07
-1.31E-07
2.13E-07
4.53E-07
-7.14E-07
-2.90E-08
1.89E-07
4.89E-07
-5.47E-07
3.62E-08
1.25E-07
3.79E-07
-3.07E-07
-3.60E-09 -9.78E-08
1.23E-07 -1.38E-07 -2.54E-08
5.44E-08
5.44E-08
1.78E-07
3.25E-07
2.22E-07
1.70E-07
2.82E-07
1.67E-07
8.10E-08
4.85E-07
7.93E-07
7.33E-07
3.29E-07
7.48E-07
5.12E-07
2.77E-07
-4.92E-07 -9.89E-07 -4.86E-07 -6.05E-07 -7.99E-07 -4.03E-07 -1.68E-07
-5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06 -5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
5.00E-06
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
41
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Minimum Load Current VDIFF=25V (A)
1.20E-02
1.00E-02
8.00E-03
6.00E-03
4.00E-03
2.00E-03
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.18. Plot of Minimum Load Current VDIFF=25V (A) versus total dose. The solid diamonds are the
average of the measured data points for the samples irradiated under electrical bias while the shaded diamonds
are the average of the measured data points for the samples irradiated with all pins tied to ground. The black
lines (solid and/or dashed) are the average of the data points after application of the KTL statistics on the
samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the data
points after application of the KTL statistics on the samples irradiated in the unbiased condition. The red
dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification value as defined in
the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
42
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.18. Raw data for Minimum Load Current VDIFF=25V (A) versus total dose,
including the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Minimum Load Current VDIFF=25V (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
2.76E-03
2.73E-03
2.74E-03
2.78E-03
2.72E-03
2.73E-03
2.71E-03
2.78E-03
2.72E-03
2.66E-03
2.71E-03
2.75E-03
10
2.76E-03
2.73E-03
2.73E-03
2.74E-03
2.72E-03
2.72E-03
2.70E-03
2.76E-03
2.71E-03
2.66E-03
2.67E-03
2.75E-03
20
2.73E-03
2.70E-03
2.74E-03
2.75E-03
2.73E-03
2.73E-03
2.71E-03
2.77E-03
2.72E-03
2.66E-03
2.71E-03
2.75E-03
30
2.72E-03
2.69E-03
2.73E-03
2.75E-03
2.69E-03
2.73E-03
2.70E-03
2.77E-03
2.71E-03
2.66E-03
2.67E-03
2.74E-03
50
2.77E-03
2.69E-03
2.77E-03
2.79E-03
2.68E-03
2.76E-03
2.70E-03
2.81E-03
2.67E-03
2.69E-03
2.66E-03
2.73E-03
60
2.78E-03
2.75E-03
2.79E-03
2.80E-03
2.70E-03
2.78E-03
2.71E-03
2.82E-03
2.68E-03
2.71E-03
2.72E-03
2.75E-03
70
2.78E-03
2.70E-03
2.78E-03
2.80E-03
2.69E-03
2.73E-03
2.71E-03
2.82E-03
2.72E-03
2.66E-03
2.67E-03
2.74E-03
2.75E-03
2.43E-05
2.81E-03
2.68E-03
2.73E-03
1.65E-05
2.78E-03
2.69E-03
2.73E-03
1.87E-05
2.78E-03
2.68E-03
2.72E-03
2.51E-05
2.79E-03
2.65E-03
2.74E-03
4.92E-05
2.87E-03
2.60E-03
2.76E-03
3.97E-05
2.87E-03
2.65E-03
2.75E-03
5.02E-05
2.89E-03
2.61E-03
2.72E-03
2.71E-03
2.72E-03
2.71E-03
2.73E-03
2.74E-03
2.73E-03
4.17E-05
3.88E-05
4.02E-05
3.99E-05
5.76E-05
5.55E-05
5.79E-05
2.83E-03
2.82E-03
2.83E-03
2.82E-03
2.89E-03
2.89E-03
2.89E-03
2.61E-03
2.60E-03
2.61E-03
2.61E-03
2.57E-03
2.59E-03
2.57E-03
1.00E-02
1.00E-02
1.00E-02
1.00E-02
1.00E-02
1.00E-02
1.00E-02
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
43
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Ps90%/90% (-KTL) Biased
2.40E+00
Current Limit1 VDIFF=5V (A)
2.20E+00
2.00E+00
1.80E+00
1.60E+00
1.40E+00
1.20E+00
1.00E+00
0
10
20
30
40
Total Dose (krad(Si))
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Figure 5.19. Plot of Current Limit1 VDIFF=5V (A) versus total dose. The solid diamonds are the average of
the measured data points for the samples irradiated under electrical bias while the shaded diamonds are the
average of the measured data points for the samples irradiated with all pins tied to ground. The black lines
(solid and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the data points after
application of the KTL statistics on the samples irradiated in the unbiased condition. The red dotted line(s) are
the pre- and/or post-irradiation minimum and/or maximum specification value as defined in the datasheet
and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
44
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.19. Raw data for Current Limit1 VDIFF=5V (A) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Current Limit1 VDIFF=5V (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
2.09E+00
2.05E+00
2.01E+00
2.09E+00
2.25E+00
2.05E+00
2.27E+00
2.15E+00
2.05E+00
2.01E+00
2.25E+00
2.05E+00
10
2.11E+00
2.09E+00
2.03E+00
2.13E+00
2.27E+00
2.09E+00
2.29E+00
2.21E+00
2.07E+00
2.05E+00
2.25E+00
2.05E+00
20
2.13E+00
2.09E+00
2.05E+00
2.15E+00
2.29E+00
2.11E+00
2.30E+00
2.25E+00
2.09E+00
2.07E+00
2.25E+00
2.05E+00
30
2.15E+00
2.11E+00
2.05E+00
2.15E+00
2.30E+00
2.13E+00
2.34E+00
2.27E+00
2.13E+00
2.09E+00
2.25E+00
2.05E+00
50
2.21E+00
2.17E+00
2.11E+00
2.21E+00
2.36E+00
2.17E+00
2.38E+00
2.32E+00
2.17E+00
2.15E+00
2.25E+00
2.05E+00
24-hr
Anneal
168-hr
Anneal
60
2.19E+00
2.15E+00
2.09E+00
2.19E+00
2.34E+00
2.17E+00
2.36E+00
2.32E+00
2.15E+00
2.13E+00
2.25E+00
2.05E+00
70
2.15E+00
2.13E+00
2.07E+00
2.17E+00
2.32E+00
2.13E+00
2.32E+00
2.25E+00
2.11E+00
2.09E+00
2.25E+00
2.05E+00
Biased Statistics
Average Biased
2.10E+00 2.13E+00 2.14E+00 2.15E+00 2.21E+00 2.19E+00 2.17E+00
Std Dev Biased
9.12E-02
8.88E-02
9.12E-02
9.23E-02
9.23E-02
9.23E-02
9.28E-02
Ps90%/90% (+KTL) Biased
2.35E+00 2.37E+00 2.39E+00 2.41E+00 2.47E+00 2.45E+00 2.42E+00
Ps90%/90% (-KTL) Biased
1.85E+00 1.88E+00 1.89E+00 1.90E+00 1.96E+00 1.94E+00 1.91E+00
Un-Biased Statistics
Average Un-Biased
2.11E+00 2.14E+00 2.16E+00 2.19E+00 2.24E+00 2.23E+00 2.18E+00
Std Dev Un-Biased
1.05E-01
1.04E-01
1.04E-01
1.07E-01
1.05E-01
1.06E-01
1.00E-01
Ps90%/90% (+KTL) Un-Biased
2.39E+00 2.43E+00 2.45E+00 2.49E+00 2.53E+00 2.52E+00 2.45E+00
Ps90%/90% (-KTL) Un-Biased
1.82E+00 1.86E+00 1.88E+00 1.90E+00 1.95E+00 1.94E+00 1.91E+00
Specification MIN
1.50E+00 1.50E+00 1.50E+00 1.50E+00 1.50E+00 1.50E+00 1.50E+00
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
45
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Ps90%/90% (-KTL) Biased
1.60E-01
Current Limit2 VDIFF=25V (A)
1.40E-01
1.20E-01
1.00E-01
8.00E-02
6.00E-02
4.00E-02
2.00E-02
0.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.20. Plot of Current Limit2 VDIFF=25V (A) versus total dose. The solid diamonds are the average of
the measured data points for the samples irradiated under electrical bias while the shaded diamonds are the
average of the measured data points for the samples irradiated with all pins tied to ground. The black lines
(solid and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the data points after
application of the KTL statistics on the samples irradiated in the unbiased condition. The red dotted line(s) are
the pre- and/or post-irradiation minimum and/or maximum specification value as defined in the datasheet
and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
46
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
10-006 100412 R1.3
Table 5.20. Raw data for Current Limit2 VDIFF=25V (A) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Current Limit2 VDIFF=25V (A)
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
10
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
20
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
30
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
50
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
24-hr
Anneal
168-hr
Anneal
60
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
70
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Biased Statistics
Average Biased
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Std Dev Biased
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
Ps90%/90% (+KTL) Biased
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Ps90%/90% (-KTL) Biased
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Un-Biased Statistics
Average Un-Biased
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Std Dev Un-Biased
0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00 0.00E+00
Ps90%/90% (+KTL) Un-Biased
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Ps90%/90% (-KTL) Un-Biased
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
1.40E-01
Specification MIN
5.00E-02
5.00E-02
4.90E-02
4.90E-02
4.80E-02
4.80E-02
4.80E-02
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
1.60E+00
Dropout Voltage IL=1.5A (V)
1.50E+00
1.40E+00
1.30E+00
1.20E+00
1.10E+00
1.00E+00
0
10
20
30
40
50
24-Hr
60
Anneal
168-Hr
70
Anneal
Total Dose (krad(Si))
Figure 5.21. Plot of Dropout Voltage IL=1.5A (V) versus total dose. The solid diamonds are the average of
the measured data points for the samples irradiated under electrical bias while the shaded diamonds are the
average of the measured data points for the samples irradiated with all pins tied to ground. The black lines
(solid and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated under electrical bias while the gray lines (solid and/or dashed) are the average of the data points after
application of the KTL statistics on the samples irradiated in the unbiased condition. The red dotted line(s) are
the pre- and/or post-irradiation minimum and/or maximum specification value as defined in the datasheet
and/or test plan.
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Table 5.21. Raw data for Dropout Voltage IL=1.5A (V) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Dropout Voltage IL=1.5A (V)
Device
4
8
11
14
17
19
41
60
62
65
149
153
0
1.22E+00
1.22E+00
1.26E+00
1.22E+00
1.26E+00
1.22E+00
1.22E+00
1.21E+00
1.22E+00
1.22E+00
1.27E+00
1.21E+00
10
1.21E+00
1.22E+00
1.22E+00
1.22E+00
1.23E+00
1.25E+00
1.22E+00
1.23E+00
1.23E+00
1.23E+00
1.27E+00
1.21E+00
20
1.28E+00
1.23E+00
1.25E+00
1.27E+00
1.25E+00
1.24E+00
1.23E+00
1.22E+00
1.23E+00
1.23E+00
1.31E+00
1.21E+00
30
1.24E+00
1.24E+00
1.25E+00
1.23E+00
1.24E+00
1.23E+00
1.23E+00
1.23E+00
1.23E+00
1.23E+00
1.27E+00
1.21E+00
50
1.24E+00
1.23E+00
1.25E+00
1.23E+00
1.24E+00
1.24E+00
1.24E+00
1.24E+00
1.24E+00
1.24E+00
1.22E+00
1.21E+00
24-hr
Anneal
168-hr
Anneal
60
1.23E+00
1.23E+00
1.23E+00
1.22E+00
1.24E+00
1.23E+00
1.23E+00
1.23E+00
1.24E+00
1.24E+00
1.24E+00
1.20E+00
70
1.24E+00
1.28E+00
1.25E+00
1.22E+00
1.23E+00
1.30E+00
1.23E+00
1.36E+00
1.28E+00
1.23E+00
1.24E+00
1.21E+00
Biased Statistics
Average Biased
1.24E+00 1.22E+00 1.25E+00 1.24E+00 1.24E+00 1.23E+00 1.24E+00
Std Dev Biased
2.24E-02
8.22E-03
1.94E-02
7.68E-03
7.42E-03
6.77E-03
2.37E-02
Ps90%/90% (+KTL) Biased
1.30E+00 1.24E+00 1.31E+00 1.26E+00 1.26E+00 1.25E+00 1.31E+00
Ps90%/90% (-KTL) Biased
1.18E+00 1.20E+00 1.20E+00 1.22E+00 1.22E+00 1.21E+00 1.18E+00
Un-Biased Statistics
Average Un-Biased
1.22E+00 1.23E+00 1.23E+00 1.23E+00 1.24E+00 1.23E+00 1.28E+00
Std Dev Un-Biased
6.02E-03
1.09E-02
8.56E-03
2.66E-03
2.91E-03
6.17E-03
5.19E-02
Ps90%/90% (+KTL) Un-Biased
1.23E+00 1.26E+00 1.25E+00 1.24E+00 1.25E+00 1.25E+00 1.42E+00
Ps90%/90% (-KTL) Un-Biased
1.20E+00 1.20E+00 1.21E+00 1.22E+00 1.23E+00 1.22E+00 1.14E+00
Specification MAX
1.500
1.500
1.510
1.510
1.520
1.520
1.520
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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6.0. Summary / Conclusions
The ELDRS testing described in this final report was performed using the facilities at Radiation Assured
Devices’ Longmire Laboratories in Colorado Springs, CO. The ELDRS source is a GB-150 irradiator
modified to provide a panoramic exposure. The Co-60 rods are held in the base of the irradiator heavily
shielded by lead. During the irradiation exposures the rod is raised by an electronic timer/controller and
the exposure is performed in air. The dose rate for this irradiator in this configuration ranges from
approximately 1mrad(Si)/s to a maximum of approximately 50rad(Si)/s as determined by the distance
from the source.
Samples of the RH1086MK Low Dropout Positive Adjustable Regulator described in this report were
irradiated biased with a single-ended 30V supply and unbiased (all leads tied to ground). The devices
were irradiated to a maximum total ionizing dose level of 50krad(Si) with a pre-irradiation baseline
reading as well as incremental readings at 10, 20, and 30krad(Si). Electrical testing occurred within one
hour following the end of each irradiation segment. For intermediate irradiations, the units were tested
and returned to total dose exposure within two hours from the end of the previous radiation increment.
In addition, all units-under-test received a 24hr room temperature and 168hr 100°C anneal, using the
same bias conditions as the radiation exposure.
The parametric data was obtained as read and record and all the raw data plus an attributes summary are
contained in a separate Excel file. The attributes data contains the average, standard deviation and the
average with the KTL values applied. The KTL value used in this work is 2.742 per MIL-HDBK-814
using one sided tolerance limits of 90/90 and a 5-piece sample size. The 90/90 KTL values were
selected to match the statistical levels specified in the MIL-PRF-38535 sampling plan for the
qualification of a radiation hardness assured (RHA) component. Note that the following criteria must be
met for a device to pass the low dose rate test: following the radiation exposure each of the 5 pieces
irradiated under electrical bias shall pass the specification value. The units irradiated without electrical
bias and the KTL statistics are included in this report for reference only. If any of the 5 pieces irradiated
under electrical bias exceed the datasheet specifications, then the lot could be logged as a failure.
Using the conditions stated above, the RH1086MK Low Dropout Positive Adjustable Regulator (from
the lot date code identified on the first page of this test report) passed the low dose rate test with only
minor degradation to the VOUT parameters.
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Appendix A: Photograph of a Sample Unit-Under-Test to Show Part Markings
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Appendix B: TID Bias Connections
(Extracted from LINEAR TECHNOLOGY CORPORATION RH1086M Datasheet)
Biased Samples:
Pin
1
2
Function
Bias
ADJ
GND
VIN
+30V decoupled with 10μF Tantalum Capacitor
GND via 150Ω Resistor in Parallel
3 (CASE) VOUT
with a 10μF Tantalum Capacitor
Unbiased Samples (All Pins Tied to Ground):
Pin
Function Bias
1
ADJ
GND
2
VIN
GND
3 (CASE) VOUT GND
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30V
GND
Figure B.1. Irradiation bias circuit for the units to be irradiated under electrical bias. Both the input and output must
be decoupled with 10μF of tantalum capacitance (see bias table above). Note that this figure is intentionally different
from the bias circuit defined in the LINEAR TECHNOLOGY CORPORATION RH1086M Datasheet and was
approved by the customer.
Figure B.2. K package drawing (for reference only). This figure was extracted from the LINEAR TECHNOLOGY
CORPORATION RH1086M Datasheet.
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Appendix C: Electrical Test Parameters and Conditions
All electrical tests for this device are performed on one of Radiation Assured Device’s LTS2020 Test
Systems. The LTS2020 Test System is a programmable parametric tester that provides parameter
measurements for a variety of digital, analog and mixed signal products including voltage regulators,
voltage comparators, D to A and A to D converters. The LTS2020 Test System achieves accuracy and
sensitivity through the use of software self-calibration and an internal relay matrix with separate family
boards and custom personality adapter boards. The tester uses this relay matrix to connect the required
test circuits, select the appropriate voltage / current sources and establish the needed measurement loops
for all the tests performed. The tests will be conducted using the LTS-2101 Linear Family Board, LTS0606 Regulator Fixture and the RH1086K BGSS-020602 DUT board. The measured parameters and
test conditions are shown in Table C.1.
A listing of the measurement precision/resolution for each parameter is shown in Table C.2. The
precision/resolution values were obtained either from test data or from the DAC resolution of the LTS2020. To generate the precision/resolution shown in Table C.2, one of the units-under-test was tested
repetitively (a total of 10-times with re-insertion between tests) to obtain the average test value and
standard deviation. Using this test data MIL-HDBK-814 90/90 KTL statistics were applied to the
measured standard deviation to generate the final measurement range. This value encompasses the
precision/resolution of all aspects of the test system, including the LTS2020 mainframe, family board,
socket assembly and DUT board as well as insertion error. In some cases, the measurement resolution is
limited by the internal DACs, which results in a measured standard deviation of zero. In these instances
the precision/resolution will be reported back as the LSB of the DAC.
Note that the testing and statistics used in this document are based on an “analysis of variables”
technique, which relies on small sample sizes to qualify much larger lot sizes (see MIL-HDBK-814, p.
91 for a discussion of statistical treatments). Unfortunately, not all measured parameters are well suited
to this approach due to relatively large variations within the sample population compared to the
specification value. If necessary, larger samples sizes could be used to qualify these parameters using an
“attributes” approach.
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Table C.1. Measured parameters and test conditions for the RH1086MK. Unless otherwise
noted the conditions were selected to match the post-irradiation specifications. See LINEAR
TECHNOLOGY CORPORATION RH1086M Datasheet for the post irradiation test conditions
and specifications.
Test Description
Reference Voltage 1 (V)
Test Conditions
VDIFF = VIN-VOUT
VDIFF=3V IL=10mA
Reference Voltage 2 (V)
VDIFF=1.5V IL=10mA
Reference Voltage 3 (V)
VDIFF=1.5V IL=1.5A
Reference Voltage 4 (V)
VDIFF=15V IL=10mA
Reference Voltage 5 (V)
VDIFF=15V IL=500mA
Line Regulation (%)
VDIFF=1.5 to 15V IL=10mA
Load Regulation (%)
VDIFF=3V IL=10mA to 1.5A
Adj. Pin Current 1 (A)
VDIFF=1.5V IL=10mA
Adj. Pin Current 2 (A)
VDIFF=3V IL=10mA
Adj. Pin Current 3 (A)
VDIFF=15V IL=10mA
Adj. Pin Current 4 (A)
VDIFF=1.5V IL=1.5A
Adj. Pin Current 5 (A)
VDIFF=3V IL=1.5A
Adj. Pin Current 6 (A)
VDIFF=15V IL=500mA
Adj. Pin Current Change vs. Line 1 (A)
VDIFF=1.5 to 15V IL=10mA
Adj. Pin Current Change vs. Line 2 (A)
VDIFF=1.5 to 15V IL=500mA
Adj. Pin Current Change vs. Load 1 (A) VDIFF=1.5V IL=10mA to 1.5A
Adj. Pin Current Change vs. Load 2 (A) VDIFF=15V IL=10 to 500mA
Minimum Load Current (A)
(VIN-VOUT)= 25V
Current Limit 1 (A)
VDIFF=5V (A)
Current Limit 2 (A)
VDIFF=25V (A)
Dropout Voltage (V)
IL=1.5A
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Table C.2. Measured parameters, pre-irradiation specifications and measurement resolution
for the RH1086MK.
Measured Parameter
Reference Voltage (V)
Pre-Irradiation
Measurement
Specification
Precision/Resolution
1.238-1.262V
±1.00E-03V
1.225-1.270V
Line Regulation (%)
±0.2% MAX
±2.12E-02%
Load Regulation (%)
±0.3% MAX
±4.25E-02A
Adj. Pin Current (A)
120µA MAX
±6.45E-07A
Adj. Pin Current Change (A)
±5µA MAX
±4.98E-07A
Minimum Load Current (A)
10mA MAX
±5.51E-06A
Current Limit (A)
1.5A MIN
50mA MIN
±1E-03A
Dropout Voltage (V)
1.5V MAX
±5.94E-03V
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Appendix D: List of Figures used in Section 5 (Test Results)
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.10
5.11
5.12
5.13
5.14
5.15
5.16
5.17
5.18
5.19
5.20
5.21
Output Voltage (V) @ Vdiff=3V, Il=10mA
Output Voltage (V) @ Vdiff=1.5V, Il=10mA
Output Voltage (V) @ Vdiff=3V, Il=1.5A
Output Voltage (V) @ Vdiff=15V, Il=10mA
Output Voltage (V) @ Vdiff=15V, Il=0.5A
Line Regulation (%); Vdiff=1.5V to 15V, Il=10mA
Load Regulation (%); Vdiff=3V, Il=10mA to 1.5A
Adjust pin Current (A); Vdiff=1.5V, Il=10mA
Adjust pin Current (A); Vdiff=3V, Il=10mA
Adjust pin Current (A); Vdiff=15V, Il=10mA
Adjust pin Current (A); Vdiff=1.5V, Il=1.5A
Adjust pin Current (A); Vdiff=3V, Il=1.5A
Adjust pin Current (A); Vdiff=15V, Il=0.5A
Adjust Pin Current Change (A); Vdiff=1.5V to 15V, Il=10mA
Adjust Pin Current Change (A); Vdiff=1.5V to 15V, Il=0.5A
Adjust Pin Current Change (A); Vdiff=1.5V, Il=10mA to 1.5A
Adjust Pin Current Change (A); Vdiff=1.5V, Il=10mA to 0.5A
Minimum Load Current (A); Vdiff=25V
Current Limit (A); Vdiff=5V
Current Limit (A); Vdiff=25V
Dropout Voltage (V) @ Il=1.5A
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REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Table I; changed the max limit for the Dropout voltage test from 1.55 V
to 1.30 V. Removed 3/ on the Standard Microcircuit Drawing Bulletin
page and added Vendor CAGE number 88379. -sld
09-10-01
Charles F. Saffle
B
Added case outline T. -sld
10-06-22
Charles F. Saffle
REV
SHEET
REV
B
B
BA
B
B
B
B
B
SHEET
15
16
17
18
19
20
21
22
REV
B
B
B
B
B
B
B
B
B
B
B
B
B
B
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
REV STATUS
OF SHEETS
PMIC N/A
STANDARD MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
PREPARED BY
Steve Duncan
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil/
CHECKED BY
Greg Cecil
APPROVED BY
Charles F. Saffle
DRAWING APPROVAL DATE
MICROCIRCUIT, HYBRID, DUAL VOLTAGE
REGULATOR, POSITIVE AND NEGATIVE,
LOW DROPOUT, ADJUSTABLE
09-08-19
REVISION LEVEL
B
SIZE
A
SHEET
DSCC FORM 2233
APR 97
CAGE CODE
67268
1
OF
5962-09201
22
5962-E282-10
1. SCOPE
1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A
choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When
available, a choice of radiation hardness assurance levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962



Federal
stock class
designator
\



RHA
designator
(see 1.2.1)
09201
01



Device
type
(see 1.2.2)
/
K



Device
class
designator
(see 1.2.3)
U



Case
outline
(see 1.2.4)
X



Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA
levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
8651, 8652
02
8657, 8658
Circuit function
Dual voltage regulator, positive and negative, low
dropout, adjustable
Dual voltage regulator, positive, low dropout, adjustable
1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level.
All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K,
and E) or QML Listing (Class G and D). The product assurance levels are as follows:
Device class
Device performance documentation
K
Highest reliability class available. This level is intended for use in space
applications.
H
Standard military quality class level. This level is intended for use in applications
where non-space high reliability devices are required.
G
Reduced testing version of the standard military quality class. This level uses the
Class H screening and In-Process Inspections with a possible limited temperature
range, manufacturer specified incoming flow, and the manufacturer guarantees (but
may not test) periodic and conformance inspections (Group A, B, C and D).
E
Designates devices which are based upon one of the other classes (K, H, or G)
with exception(s) taken to the requirements of that class. These exception(s) must
be specified in the device acquisition document; therefore the acquisition document
should be reviewed to ensure that the exception(s) taken will not adversely affect
system performance.
D
Manufacturer specified quality class. Quality level is defined by the manufacturers
internal, QML certified flow. This product may have a limited temperature range.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-09201
A
REVISION LEVEL
B
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
U
T
Z
Descriptive designator
See figure 1
See figure 1
See figure 1
See figure 1
See figure 1
Terminals
Package style
6
6
8
6
8
Thru-Hole
Surface Mount
Thru-hole
Surface Mount with unformed leads
Surface Mount
1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534.
1.3 Absolute maximum ratings. 1/
Input voltage:
Positive regulator:
Device type 01 and 02 ........................................................
Negative regulator:
Device type 01 ....................................................................
Input-Output differential voltage:
Positive regulator:
Device types 01and 02 ......................................................
Negative regulator:
Device type 01....................................................................
Junction temperature (TJ) ..........................................................
Thermal resistance, junction-to-case (JC) each regulator .........
Lead temperature (soldering, 10 seconds) ................................
Storage temperature range ........................................................
25+VREF
-35 V
25 V
30 V
+150C
5C/W
300C
-65C to +150C
1.4 Recommended operating conditions.
Output voltage range:
Postive voltage regulator
Device types 01 and 02 .....................................................
Negative voltage regulator:
Device type 01....................................................................
Case operating temperature range (TC) ......................................
+1.275 V to +23 V dc
-2.45 V to -25 V dc
-55C to +125C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38534 - Hybrid Microcircuits, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
________
1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
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APR 97
SIZE
5962-09201
A
REVISION LEVEL
B
SHEET
3
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in
accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as
designated in the device manufacturer's Quality Management (QM) plan or as designated for the applicable device class. The
manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as
defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not
affect the form, fit, or function of the device for the applicable device class.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38534 and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Block diagram. The block diagram shall be as specified on figure 3.
3.2.4 Maximum power dissipation verses case temperature table. The maximum power dissipation verses case temperature
is specified in table IA.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full specified operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with
the PIN listed in 1.2 herein. In addition, the manufacturer's vendor similar PIN may also be marked.
3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described
herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample,
for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those
which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be
made available to the preparing activity (DSCC-VA) upon request.
3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this
drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturer's product meets
the performance requirements of MIL-PRF-38534 and herein.
3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of
microcircuits delivered to this drawing.
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as
modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form,
fit, or function as described herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
SIZE
5962-09201
A
REVISION LEVEL
B
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Group A
subgroups
Conditions
-55C  TC +125C
P  PMAX
unless otherwise specified
Device
types
Limits
Unit
Min
Max
1.210
1.275
V
POSITIVE REGULATOR
Reference voltage
VREF
1.5 V  (VIN - VOUT)  15 V,
ILOAD = 10 mA
1,2,3
01,02
Line regulation 1/
ΔVOUT
ΔVIN
1.5 V  (VIN - VOUT)  15 V,
ILOAD = 10 mA
1,2,3
01,02
0.25
%
Load regulation 1/
ΔVOUT
ΔIOUT
10 mA  IOUT  1.0 A, (VIN - VOUT)
=3V
1,2,3
01,02
0.3
%
30 ms pulse, TC = +25C
1
01,02
0.04
%/W
VREF = 1%, IOUT = 1.0 A
1,2,3
01,02
1.30
V
IOUT = 1.0 A, (VIN - VOUT) = 3 V,
f = 120 Hz, CADJ = COUT = 25 F
1,2,3
01,02
1
01,02
120
A
Thermal regulation
Dropout voltage
VDROP
Ripple rejection
60
dB
Adjustment pin current
IADJ
TC = +25C
Adjustment pin current
change
IADJ
10 mA IOUT  1.0 A,
1.5 V  (VIN - VOUT)  15 V
1,2,3
01,02
5
A
Minimum load current 2/
IMIN
(VIN - VOUT) = 25 V
1,2,3
01,02
10
mA
Current limit
IMAX
(VIN - VOUT)  5 V
1,2,3
01,02
(VIN - VOUT)  25 V
1,2,3
VREF Long term stability
2/
ΔVOUT
ΔTIME
Burn-in: TC = +125C at 1000
hours minimum, tested at +25C
1.0
A
0.047
1
01,02
1,3
01
0.3
%
-2.45
V
NEGATIVE REGULATOR
Reference voltage
VREF
VIN - VOUT = -1.2 V to -28 V,
1 mA  IOUT 3 A, VOUT = -5 V,
TC = +25C and -55C
-2.29
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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SHEET
5
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Group A
subgroups
Conditions
-55C  TC +125C
P  PMAX
unless otherwise specified
Device
types
Limits
Min
Unit
Max
NEGATIVE REGULATOR - CONTINUED
Dropout Voltage
VDROP
IOUT = 0.5 A, VOUT = -5 V
1,2,3
01
V
IOUT = 3 A, VOUT = -5 V
Ripple rejection
1.05
IOUT = 1.0 A, (VIN - VOUT) = 3 V,
f = 120 Hz, CADJ = COUT = 25 F
1,2,3
01
60
dB
Line regulation 1/
ΔVOUT
ΔVIN
1 V VIN - VOUT) 20V,
VOUT = -5 V
1,2,3
01
0.02
%/V
Load regulation 1/
ΔVOUT
ΔIOUT
5 mA  IOUT  3 A, (VIN - VOUT) =
-15 V to -10 V, VOUT = -5 V
1,2,3
01
0.8
%
1
01
0.014
%/W
1,2,3
01
1,3
01
VIN - VOUT = 10 V, IOUT = 5 mA to 2
A, TC = +25C
Thermal regulation 2/
Minimum input voltage
VIN MIN
IOUT = 3 A, VOUT = VREF
Internal Current limit
IMAX
-1.5 V  (VIN - VOUT)  -10 V,
TC = +25C and -55C
External current limit
ILIM
V
3.3
4.55
(VIN - VOUT) =-15 V,
TC = +25C and -55C
2.0
4.5
(VIN - VOUT)  -20 V,
TC = +25C and -55C
1.0
3.1
(VIN - VOUT) = -30 V, 2/
TC = +25C and -55C
0.2
1.6
2.7
3. 7
0.9
1.6
1,2,3
RLIM = 5 k
01
RLIM = 15 k
A
A
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
B
SHEET
6
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Group A
subgroups
Conditions
-55°C  TC +125C
P  PMAX
unless otherwise specified
Device
types
Limits
Min
Unit
Max
NEGATIVE REGULATOR - CONTINUED
Quiescent supply current
IQ
IOUT = 5 mA, VOUT = VREF,
(-4 V VIN  -25 V)
1,2,3
01
3.5
mA
Supply current change
with load
IQ
(VIN - VOUT) = .25 V +(.25 x IOUT)
1,2,3
01
35
mA/A
(VIN - VOUT)  -2 V
1/
2/
21
Regulation is measured at a constant junction temperature, using pulse testing with a low duty cycle. Changes in
output voltage due to heating effects are covered under the specification for thermal regulation. Measurements taken at
the output lead must be adjusted for lead resistance.
Parameter shall be tested at intial device characterization and after design or process changes. Parameter shall be
guaranteed to the limits specified in table I for all lots not specifically tested.
STANDARD
MICROCIRCUIT DRAWING
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APR 97
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A
REVISION LEVEL
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SHEET
7
Table IA. Maximum power dissipation verses case temperature table.
Case
Temperature
(C)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Maximum power dissipation
(Watts)
One regulator
"ON"
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Both regulators
"ON"
53
51
49
48
46
44
42
41
39
37
35
34
32
30
28
26
25
23
21
19
18
16
14
12
11
9
7
5
4
2
0
SIZE
5962-09201
A
REVISION LEVEL
B
SHEET
8
Case U
FIGURE 1. Case outline(s).
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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9
Case U - Continued.
Symbol
Inches
Min
A
Millimeters
Max
Min
.220
Max
5.59
b
.028
.032
0.71
0.81
b3
.085
.095
2.12
2.41
D
.750
.760
19.05
19.30
D1
.510
.520
12.95
13.21
e
.100 BSC
2.54 BSC
e1
.300 BSC
7.62 BSC
e2
.108 BSC
2.74 BSC
eA
.700
.740
17.78
18.80
E
.410
.420
10.41
10.67
F
.035
.045
0.90
1.14
G1
.632 BSC
G2
.2025
L1
.230
L2
.2125
16.05 BSC
5.144
5.84
.150 REF
p
.140
5.408
3.81 REF
.150
3.56
3.81
Q
.122 TYP
3.10 TYP
R
.065 TYP
1.65 TYP
S1
.028
0.71
NOTES:
1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
2. The package contains a BeO substrate.
3. The case is electrically isolated.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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SIZE
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REVISION LEVEL
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SHEET
10
Case T
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
B
SHEET
11
Case outline T - continued.
Symbol
Inches
Min
A
Millimeters
Max
Min
Max
.220
5.59
b
.028
.032
0.71
0.81
b3
.085
.095
2.12
2.41
D
.650
.660
16.51
16.76
D1
.410
.420
10.41
10.67
e
.100 BSC
2.54 BSC
e1
.200 BSC
5.08 BSC
e2
.108 BSC
2.74 BSC
E
.410
.420
10.41
10.67
F
.035
.045
0.90
1.14
G1
.123 BSC
G2
.2025
L
.400
p
.140
.2125
3.12 BSC
5.144
5.408
10.16
.150
3.56
3.81
Q
.122 TYP
3.10 TYP
R
.065 TYP
1.65 TYP
S1
.028
0.71
NOTES:
1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
2. The package contains a BeO substrate.
3. The case is electrically isolated.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
B
SHEET
12
Case outline X.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
B
SHEET
13
Case outline X - Continued.
Symbol
Inches
Min
Millimeters
Max
A
Min
Max
.220
5.59
b
.028
.032
0.71
0.81
b3
.085
.095
2.12
2.41
D
.650
.660
16.51
16.76
D1
.410
.420
10.41
10.67
e
.100 BSC
2.54 BSC
e1
.200 BSC
5.08 BSC
e2
.108 BSC
2.74 BSC
eA
.700
.740
17.78
18.80
E
.410
.420
10.41
10.67
F
.035
.045
0.90
1.14
G1
.123 BSC
G2
.2025
L1
.230
L2
3.12 BSC
.2125
5.144
5.84
.150 REF
p
.140
5.408
3.81 REF
.150
3.56
3.81
Q
.122 TYP
3.10 TYP
R
.065 TYP
1.65 TYP
S1
.028
0.71
NOTES:
1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
2. The package contains a BeO substrate.
3. The case is electrically isolated.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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SHEET
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Case outline Y.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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Case outline Y - continued.
Symbol
Inches
Min
A
Millimeters
Max
Min
Max
.220
5.59
A2
.015
.025
0.38
0.64
b
.028
.032
0.71
0.81
b3
.085
.095
2.12
2.41
D
.650
.660
16.51
16.76
D1
.410
.420
10.41
10.67
e
.100 BSC
2.54 BSC
e1
.200 BSC
5.08 BSC
e2
.108 BSC
2.74 BSC
E
.410
.420
10.41
10.67
F
.035
.045
0.90
1.14
G1
.123 BSC
3.12 BSC
G2
.2025
.2125
5.144
5.408
H
.866
.906
22.00
23.01
L1
.055
.065
1.40
1.65
L2
.150 REF
p
.140
3.81 REF
.150
3.56
3.81
Q
.122 TYP
3.10 TYP
R
.065 TYP
1.65 TYP
S1
.028
0.71
NOTES:
1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
2. The package contains a BeO substrate.
3. The case is electrically isolated.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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Case Z
FIGURE 1. Case outlines(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
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REVISION LEVEL
B
SHEET
17
Case Z - Continued.
Symbol
Inches
Min
Millimeters
Max
A
Min
Max
.220
5.59
A1
.015
.025
0.38
0.64
b
.028
.032
0.71
0.81
b3
.085
.095
2.12
2.41
D
.750
.760
19.05
19.30
D1
.510
.520
12.95
13.21
e
.100 BSC
2.54 BSC
e1
.300 BSC
7.62 BSC
e2
.108 BSC
2.74 BSC
E
.410
.420
10.41
10.67
F
.035
.045
0.90
1.14
G1
.632 BSC
16.05 BSC
G2
.2025
.2125
5.144
5.408
H
.866
.906
22.00
23.01
L1
.055
.065
1.40
1.65
L2
.150 REF
p
.140
3.81 REF
.150
3.56
3.81
Q
.122 TYP
3.10 TYP
R
.065 TYP
1.65 TYP
S1
.028
0.71
NOTES:
1. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
2. The package contains a BeO substrate.
3. The case is electrically isolated.
FIGURE 1. Case outline(s) - Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
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REVISION LEVEL
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Device types
Case outlines
Terminal number
01
02
U and Z
X , Y and T
Terminal symbol
POS_ ADJ_1
NEG_REF_2
NEG_VOUT_2
NEG_VIN_2
NEG_GND_2
NEG_FB_2
POS_VOUT_1
POS_VIN_1
1
2
3
4
5
6
7
8
POS_ADJ_1
POS_VOUT_1
POS_VIN_1
POS_ADJ_2
POS_VIN_2
POS_VOUT_2
FIGURE 2. Terminal connections.
Device type 01
FIGURE 3. Block diagram.
STANDARD
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Device type 02
FIGURE 3. Block diagram - Continued.
STANDARD
MICROCIRCUIT DRAWING
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TABLE II. Electrical test requirements.
MIL-PRF-38534 test requirements
Subgroups
(in accordance with
MIL-PRF-38534, group A
test table)
Interim electrical parameters
---
Final electrical parameters
1,2,3
Group A test requirements
1,2,3
Group C end-point electrical
parameters
1,2,3
End-point electrical parameters
for Radiation Hardness Assurance
(RHA) devices
Not applicable
* PDA applies to subgroup 1.
4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply:
a.
b.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified
in method 1015 of MIL-STD-883.
(2)
TA as specified in accordance with table I of method 1015 of MIL-STD-883.
Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter
tests prior to burn-in are optional at the discretion of the manufacturer.
4.3 Conformance and periodic inspections. Conformance inspection (CI) and periodic inspection (PI) shall be in accordance
with MIL-PRF-38534 and as specified herein.
4.3.1 Group A inspection (CI). Group A inspection shall be in accordance with MIL-PRF-38534 and as follows:
a.
Tests shall be as specified in table II herein.
b.
Subgroups 4, 5, 6, 7, 8A, 8B, 9, 10, and 11 shall be omitted.
4.3.2 Group B inspection (PI). Group B inspection shall be in accordance with MIL-PRF-38534.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-09201
A
REVISION LEVEL
B
SHEET
21
4.3.3 Group C inspection (PI). Group C inspection shall be in accordance with MIL-PRF-38534 and as follows:
a.
End-point electrical parameters shall be as specified in table II herein.
b.
Steady-state life test, method 1005 of MIL-STD-883.
(1)
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified
in method 1005 of MIL-STD-883.
(2)
TA as specified in accordance with table I of method 1005 of MIL-STD-883.
(3)
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.3.4 Group D inspection (PI). Group D inspection shall be in accordance with MIL-PRF-38534.
4.3.5 Radiation Hardness Assurance (RHA) inspection. RHA inspection is not currently applicable to this drawing.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38534.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.3 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated as specified in MIL-PRF38534.
6.4 Record of users. Military and industrial users shall inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and the applicable SMD. DSCC will maintain a record of users and this list will be
used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC
5962) should contact DSCC-VA, telephone (614) 692-0544.
6.5 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone (614)
692-1081.
6.6 Sources of supply. Sources of supply are listed in MIL-HDBK-103 and QML-38534. The vendors listed in MIL-HDBK-103
and QML-38534 have submitted a certificate of compliance (see 3.7 herein) to DSCC-VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-09201
A
REVISION LEVEL
B
SHEET
22
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 10-06-22
Approved sources of supply for SMD 5962-09201 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38534 during the next revisions. MIL-HDBK-103 and QML-38534 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded
by the next dated revisions of MIL-HDBK-103 and QML-38534. DSCC maintains an online database of all current
sources of supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-0920101KUA
5962-0920101KUC
5962-0920101KZA
5962-0920101KZC
88379
88379
88379
88379
VRG8651-201-2S
VRG8651-201-1S
VRG8652-201-2S
VRG8652-201-1S
5962-0920102KXA
5962-0920102KXC
5962-0920102KYA
5962-0920102KYC
5962-0920102KTC
88379
88379
88379
88379
88379
VRG8657-201-2S
VRG8657-201-1S
VRG8658-201-2S
VRG8658-201-1S
VRG8658-202-1S
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the Vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
88379
Vendor name
and address
Aeroflex Plainview Incorporated,
(Aeroflex Microelectronics Solutions)
35 South Service Road
Plainview, NY 11803-4193
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.