VFT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AC • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 VFT4045BP TYPICAL APPLICATIONS PIN 1 For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 2 MECHANICAL DATA Case: ITO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(DC) 40 A VRRM 45 V IFSM 240 A VF at IF = 40 A 0.51 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Package ITO-220AC Diode variation Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT4045BP UNIT VRRM 45 V IF(DC) (1) 40 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 240 A Operating junction temperature range (AC mode) TOP -40 to +150 °C Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Junction temperature in DC forward current without reverse bias, t 1 h TJ (2) 200 °C Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 25-Feb-15 Document Number: 89456 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT4045BP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 20 A Instantaneous forward voltage TA = 25 °C IF = 40 A VF (1) IF = 5 A IF = 20 A TA = 125 °C IF = 40 A VR = 45 V Reverse current TA = 25 °C TA = 125 °C IR (2) TYP. MAX. 0.41 - 0.50 - 0.57 0.67 0.28 - 0.41 - UNIT V 0.51 0.63 - 3000 μA 29 85 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT4045BP UNIT RJC 4.0 °C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE ITO-220AC PREFERRED P/N VFT4045BP-M3/4W UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.75 4W 50/tube Tube Revision: 25-Feb-15 Document Number: 89456 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT4045BP www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 000 45 Junction Capacitance (pF) DC Forward Current (A) 40 35 30 25 20 15 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 1000 DC Forward Current at Thermal Equilibrium 5 100 0 0 25 50 75 100 125 150 175 0.1 200 1 Fig. 1 - Maximum Forward Current Derating Curve TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (mA) Fig. 4 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 0.1 100 Reverse Voltage (V) Case Temperature (°C) 0 10 Fig. 5 - Typical Transient Thermal Impedance 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics Revision: 25-Feb-15 Document Number: 89456 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT4045BP www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC 0.404 (10.26) 0.384 (9.75) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.671 (17.04) 0.651 (16.54) 0.600 (15.24) 0.580 (14.73) PIN 1 0.025 (0.64) 0.015 (0.38) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 2 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.057 (1.45) 0.045 (1.14) 7° REF. 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) Revision: 25-Feb-15 Document Number: 89456 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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