VISHAY VFT2045BP

VFT2045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AC
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2011/65/EU
• Halogen-free according to IEC 61249-2-21 definition
2
1
VFT2045BP
TYPICAL APPLICATIONS
PIN 1
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 2
MECHANICAL DATA
Case: ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(DC)
20 A
VRRM
45 V
IFSM
160 A
VF at IF = 20 A
0.51 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
200 °C
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
SYMBOL
VFT2045BP
UNIT
VRRM
45
V
20
A
IF(DC)
(1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
160
A
Operating junction temperature range (AC mode)
TOP
- 40 to + 150
°C
Isolation voltage from termal to heatsink t = 1 min
VAC
1500
V
Junction temperature in DC forward current
without reverse bias, t  1 h
TJ (2)
 200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 23-Feb-12
Document Number: 89454
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT2045BP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
IF = 20 A
TA = 25 °C
VR = 45 V
Reverse current
IR (2)
TA = 125 °C
TYP.
MAX.
0.44
-
0.49
-
0.57
0.66
0.33
-
UNIT
V
0.41
-
0.51
0.63
-
2000
μA
10
30
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT2045BP
UNIT
RJC
4.5
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AC
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.75
4W
50/tube
Tube
VFT2045BP-M3/4W
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
24
DC Forward Current (A)
20
16
12
8
DC Forward Current at
Thermal Equilibrium
4
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0
25
50
75
100
125
150
175
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 23-Feb-12
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Document Number: 89454
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT2045BP
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
www.vishay.com
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
40
60
80
100
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
PIN
1
0.025 (0.64)
0.015 (0.38)
Revision: 23-Feb-12
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
2
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.057 (1.45)
0.045 (1.14)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Document Number: 89454
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 12-Mar-12
1
Document Number: 91000