MS45C41

MS45C41
N & P-Channel 40-V (D-S) MOSFET
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS45C41]
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
a
5.8
A
a
4.5
A
20
A
ID
Continuous Drain Current (TA =25°C)
Continuous Drain Current (TA =70°C)
IDM
IS
PD
TJ/TSTG
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
2.6
A
a
2.1
W
a
1.3
W
-55 to 150
°C
Power Dissipation (TA =25°C)
Power Dissipation (TA =70°C)
Operating Junction and Storage Temperature
Thermal Resistance Ratings
Symbol
Parameter
RθJA
Maximum
a
62.5
a
110
Maximum Junction-to-Ambient (t <= 10 sec)
Maximum Junction-to-Ambient (Steady-State)
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Static
Symbol
Parameter
VGS(th)
Gate-Source Threshold Voltage
IGSS
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current
r
DS(on)
Drain-Source On-Resistance
gfs
Forward Tranconductance
VSD
Diode Forward Voltage
Publication Order Number: [MS45C41]
Test Conditions
Min
VDS = VGS, ID = 250μA (N-ch)
1
VDS = VGS, ID = -250μA (P-ch)
-1
Typ.
Max.
V
VDS = 0 V , VGS = ±20 V
±100
VDS = 32 V , VGS = 0 V (N-ch)
1
VDS = -32 V , VGS = 0 V (P-ch)
-1
VDS = 5 V, VGs = 10 V (N-ch)
10
VDS = -5 V, VGs = -10 V (P-ch)
-10
Units
nA
uA
A
VGS = 10 V, ID = 5.3 A (N-ch)
42
VGS = 4.5 V, ID = 4.4 A (N-ch)
60
VGS = -10 V, ID = -3.6 A (N-ch)
90
VGS = -4.5 V, ID = -2.6 A (N-ch)
125
VGS = 15 V, ID = 5.3 A (N-ch)
13
VGS = -15 V, ID = -3.6 A (P-ch)
11
IS = 1.3 A , VGS = 0 V (N-ch)
0.77
IS = -1.2 A , VGS = 0 V (P-ch)
-0.81
mΩ
S
V
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
Dynamic
Symbol
b
Parameter
Test Conditions
Min
Typ.
Max.
Units
Qg
Total Gate Charge
N-Channel
--
3.6
--
nC
Qgs
Gate-Source Charge
VDS = 20 V , ID = 5.3 A,
--
1.3
--
nC
Qgd
Gate-Drain Charge
VGS = 10 V
--
1.4
--
nC
td(on)
Turn-On Delay Time
N-Channel
--
2
--
ns
tr
Rise Time
ID = 5.3 A , RL = 3.5 Ω,
--
18
--
ns
td(off)
Turn-Off Delay Time
VGEN = 10 V , RGEN = 6 Ω
--
16
--
ns
tf
Fall Time
VDD = 20 V
--
5
--
ns
CISS
Input Capacitance
N-Channel
--
287
--
pF
COSS
Output Capacitance
VDS = 15 V
--
42
--
pF
CRSS
Reverse Transfer Capacitance
f = 1 MHz ,VGS = 0 V
--
34
--
pF
Qg
Total Gate Charge
P-Channel
--
5.8
--
nC
Qgs
Gate-Source Charge
VDS = -20 V , ID = -3.6 A,
--
1.6
--
nC
Qgd
Gate-Drain Charge
VGS = -10 V
--
2.3
--
nC
Parameter
Test Conditions
Min
Typ.
Max.
Units
td(on)
Turn-On Delay Time
P-Channel
--
4
--
ns
tr
Rise Time
ID = -3.6 A , RL = 5.5 Ω,
--
5
--
ns
td(off)
Turn-Off Delay Time
VGEN = -10 V , RGEN = 6 Ω
--
17
--
ns
tf
Fall Time
VDD = -20 V
--
7
--
ns
CISS
Input Capacitance
P-Channel
--
384
--
pF
COSS
Output Capacitance
VDS = -15 V
--
36
--
pF
CRSS
Reverse Transfer Capacitance
f = 1 MHz ,VGS = 0 V
--
36
--
pF
Dynamic
Symbol
b
Publication Order Number: [MS45C41]
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
■Typical
Electrical Characteristics - N-channel
FIG.1-ON-RESISTANCE VS. DRAIN
CURRENT
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON-RESISTANCE VS GATE-TO-SOURCE
FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE
VOLTAGE
FIG.5-OUTPUT CHARACTERISTICS
Publication Order Number: [MS45C41]
FIG.6-CAPACITANCE
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
■Typical Electrical Characteristics - N-channel
FIG.7-GATE CHARGE
FIG.8-NORMALIZED ON-RESISTANCE VS
JUNCTION TEMPERATURE
FIG.9-SAFE OPERATIING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MS45C41]
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
■Typical
Electrical Characteristics - P-channel
FIG.1-ON-RESISTANCE VS. DRAIN
CURRENT
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON-RESISTANCE VS GATE-TO-SOURCE
FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE
VOLTAGE
FIG.5-OUTPUT CHARACTERISTICS
Publication Order Number: [MS45C41]
FIG.6-CAPACITANCE
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
■Typical Electrical Characteristics - P-channel
FIG.7-GATE CHARGE
FIG.8-NORMALIZED ON-RESISTANCE VS
JUNCTION TEMPERATURE
FIG.9-SAFE OPERATIING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MS45C41]
© Bruckewell Technology Corporation Rev. A -2014
MS45C41
N & P-Channel 40-V (D-S) MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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permitted by applicable law, Bruckewell disclaims
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(ii) Any and all liability, including without limitation special, consequential or incidental damages.
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non-infringement and merchantability.
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Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS45C41]
© Bruckewell Technology Corporation Rev. A -2014